STMicroelectronics-STS7PF30L
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STS7PF30L
P-CHANNEL 30V – 0.016
Ω
– 7A SO-8
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
V
R
DS(on)
I
D
DSS
STS7PF30L
30 V
< 0.021
Ω
7 A
■
■
TYPICAL R
(on) = 0.016
Ω
STANDARD OUTLINE FOR EASY
DS
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
■
SO-8
DESCRIPTION
This Power Mosfet is the latest development of ST-
Microelectronics unique “Single Feature Size
™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■
POWER MANAGEMENT IN CELLULAR
PHONES
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
30
Unit
V
DS
Drain-source Voltage (V
= 0)
V
V
V
A
A
A
W
GS
V
Drain-gate Voltage (R
= 20 k
Ω
)
30
DGR
GS
V
Gate- source Voltage
±20
7
GS
I
Drain Current (continuous) at T
= 25°C
D
C
I
Drain Current (continuous) at T
= 100°C
4.4
28
D
C
I
Drain Current (pulsed)
DM
P
TOT
Total Dissipation at T
= 25°C
2.5
C
(
●
) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
December 2002
1/6
STS7PF30L
THERMAL DATA
Rthj-amb(#) Thermal
Resistance Junction-ambient Max
50
150
°C/W
°C
Tj
Maximum Lead
T
emperature For Soldering Purpose Typ
T
stg
Storage Temperature
–55 to 150
°C
2
(#) When mounted on 1 inch
FR4 Board, 2 oz of Cu and t
≤
10s
ELECTRICAL CHARACTERISTICS
(T =
25 °C UNLESS OTHERRWISE SPECIFIED)
J
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
T
y
p.
Max.
Unit
V
I
= 250 µA, V
= 0
30
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
DS
1
µA
µA
nA
DSS
Drain Current (V
= 0)
GS
= Max Rating, T
= 125 °C
10
DS
GS
C
I
Gate-body Leakage
= ± 20V
±100
GSS
Current (V
= 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
1
T
y
p.
1.6
Max.
2.5
Unit
V
V
R
V
V
V
= V
, I
= 250µA
Gate Threshold Voltage
GS(th)
DS
GS
GS
GS
D
Static Drain-source On
Resistance
= 10
V
, I
=
3
.5A
0.0
1
1
0.016
0.016
0.022
0.021
0.028
Ω
DS(on)
D
= 4.5
V
, I
=
3
.5A
Ω
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
T
y
p.
Max.
Unit
g
Forward Transconductance
V
= 10
V
, I
= 3.5A
16
S
fs
DS
D
C
V
= 25
V
, f = 1
M
Hz, V
= 0
Input Capacitance
Output Capacitance
2600
523
pF
pF
pF
iss
DS
GS
C
oss
C
rss
Reverse Transfer
Capacitance
174
2/6
STS7PF30L
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON(2)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 15
V
, I
=
3
.5A
Turn-on Delay Time
68
ns
d(on)
DD
D
= 4.7
Ω
V =
4.5 V
G
GS
t
Rise Time
54
ns
r
(Resistive Load, Figure 3)
Q
V
V
=15
V
, I
= 7
A
,
= 4.5V
38
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
28
8.8
12
nC
nC
nC
g
DD
GS
D
Q
gs
Q
gd
SWITCHING OFF(2)
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
Turn-off-Delay Time
Fall Time
V
DD
=15
V
, I
= 3.5 A,
65
23
ns
ns
d(off)
D
t
f
R =
4.7
Ω,
V =
4.5 V
G GS
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE (2)
Symbol
Parameter
Test Conditions
Typ.
Max.
7
Unit
A
I
Source-drain Current
SD
I
(1)
(2)
Source-drain Current (pulsed)
Forward On Voltage
28
A
SDM
V
I
I
= 7 A, V
= 0
1.2
V
SD
SD
SD
GS
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
40
46
2.3
ns
nC
A
= 7A, di/dt = 100A/µs,
= 24 V, T
= 150°C
rr
Q
V
rr
RRM
DD
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse
width limited by safe operating area.
3/6
STS7PF30L
Fig. 1:
Unclamped Inductive Load Test Circuit
Fig. 2:
Unclamped Inductive Waveform
Fig. 3:
Switching Times Test Circuit For
Fig. 4:
Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/6
STS7PF30L
SO-8 MECHANICAL
DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
0016023
5/6
STS7PF30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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