STMicroelectronics-STS9NF3LL
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STS9NF3LL
N-CHANNEL 30V – 0.016
Ω
– 9A SO-8
LOW GATE CHARGE STripFET™ II POWER MOSFET
V
R
I
D
TYPE
DSS
DS(on)
STS9NF3LL
30 V
<0.019
Ω
9 A
■
■
■
■
TYPICAL R
(on) = 0.016
Ω
DS
OPTIMAL R
(on) x Qg TRADE-OFF @ 4.5V
DS
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power MOSFET is the second
generation of STMicroelectronis unique “Single Feature
Size™” strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the best performance in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.
SO-8
I
TERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PC
S
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
30
Unit
V
V
Drain-source Voltage (V
= 0)
DS
GS
V
Drain-gate Voltage (R
= 20 k
Ω
)
30
V
DGR
GS
V
Gate- source Voltage
± 16
9
V
GS
I
Drain Current (continuos) at T
= 25°C
A
D
C
I
Drain Current (continuos) at T
= 100°C
5.6
36
A
D
C
I
(
•
)
Drain Current (pulsed)
A
DM
P
T
o
tal Dissipation at T
= 25°C
2.5
W
tot
C
(
•
)
Pulse width limited by safe operating area.
November 2001
1/8
.
STS9NF3LL
THERMAL DATA
(*)
Rthj-amb
Max
50
150
-55 to 150
°C/W
°C
°C
Thermal Resistance Junction-ambient
T
Maximum Operating Junction
T
e
mperature
Storage
T
e
mperature
j
T
stg
(*)
2
When mounted on FR-4 board with 0.5 in
pad of Cu.
ELECTRICAL CHARACTERISTICS
(T
= 25 °C unless otherwise specified)
case
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
I
= 250 µA, V
= 0
D
GS
V
30
V
(BR)DSS
Breakdown Voltage
V
= Max Rating
DS
Zero Gate Voltage
1
10
µA
µA
I
DSS
Drain Current (V
= 0)
V
DS
= Max Rating
T =
125°C
GS
C
Gate-body Leakage
V
GS
= ± 16 V
±100
nA
I
GSS
Current (V
= 0)
DS
(*
)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
V
= V
I
I
= 250 µA
Gate Threshold Voltage
1
V
GS(th)
DS
GS
D
V
V
= 10 V
= 4.5
= 4.5 A
Static Drain-source On
Resistance
0.016
0.019
0.019
0.022
Ω
Ω
GS
D
I
R
DS(on)
= 4.5 A
GS
D
DYNAMIC
Symbol
Parameter
Test Conditions
=15 V
= 4 A
Min.
Typ.
Max.
Unit
(*)
V
V
I
D
g
fs
Forward Transconductance
12.5
S
DS
DS
C
iss
= 25
V
, f = 1 MHz, V
= 0
GS
Input Capacitanc
Output Capac
nce
Revers
Transfer
Capacitance
800
250
60
pF
pF
pF
C
oss
C
rss
2/8
STS9NF3LL
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 15 V
Min.
Typ.
Max.
Unit
V
R
I
= 4.5 A
= 4.5 V
Turn-on Delay Time
Rise Time
18
32
ns
ns
t
DD
D
d(on)
= 4.7
Ω
V
GS
t
r
G
(Resistive Load, Figure 1)
Q
V
= 15 V
I =
9 A V
= 5 V
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
12.5
3.2
4.5
17
nC
nC
nC
g
DD
D
GS
Q
gs
Q
(see test circuit, Figure 2)
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
V
R
= 15 V
= 4.7
Ω,
I
= 4.5 A
= 4.5 V
Turn-off Delay Time
Fall Time
21
11
ns
ns
t
DD
D
d(off)
V
GS
t
G
f
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
9
36
A
A
SD
( )
•
I
SDM
(*)
I
I
= 9 A
= 0
GS
V
Forward On Voltage
1.2
V
SD
SD
SD
t
rr
= 9 A
di/dt = 100A/µs
T =
150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
23
17
1.5
ns
nC
A
Q
V
= 15 V
rr
DD
j
I
(see test circuit, Figure 3)
RRM
(*)
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
•
)
Pulse width limited by safe operating area.
Thermal Impedance
Safe O
ating Area
3/8
STS9NF3LL
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source O
esistance
Gate C
ge vs Gate-source Voltage
Capacitance Variations
4/8
STS9NF3LL
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdow
Voltage vs Temperature.
.
.
5/8
STS9NF3LL
Fig. 1:
Switching Times Test Circuits For Resistive
Fig. 2:
Gate Charge test Circuit
Load
Fig. 3:
Test Circuit For Diode Recovery Behaviour
6/8
STS9NF3LL
SO-8 MECHANICAL
DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
0016023
7/8
STS9NF3LL
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2001 STMicroelectronics – All Rights Reserved
All other names are the property of their respective owners.
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