STMicroelectronics-STS9P2UH7
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STS9P2UH7
P-
channel 20 V, 0.0195 Ω typ., 9 A STripFET™ H7
Power MOSFET in a SO-8 package
Datasheet – production data
Features
5
8
Order code
V
DS
R
DS(on)
max
I
D
STS9P2UH7
20 V
0.0225 Ω @ 4.5 V
9 A
4
1
Very low on-resistance
Very low capacitance and gate charge
High avalanche ruggedness
Ultra logic level
SO-8
Figure 1: Internal schematic diagram
Applications
Switching applications
Description
This device exhibits low on-state resistance and
capacitance for improved conduction and
switching performance.
Table 1: Device summary
Marking Package
9L2U SO-8
Order code
Packaging
STS9P2UH7
Tape and reel
For the P-channel Power MOSFET the actual polarity of the voltages and the current must be
reversed.
January 2015
DocID025143 Rev 3
1/15
This is information on a product in full production.
Contents
STS9P2UH7
Contents
2/15
DocID025143 Rev 3
STS9P2UH7
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Parameter
Symbol
Value
Unit
20
V
V
DS
Drain-source voltage
± 8
V
A
V
GS
I
D
Gate-source voltage
9
5.8
Drain current (continuous) at T
pcb
= 25 °C
Drain current (continuous) at T
pcb
= 100 °C
Drain current (pulsed)
A
I
D
P
TOT
T
stg
T
j
36
A
2.7
W
°C
°C
Total dissipation at T
pcb
= 25 °C
Storage temperature
– 55 to 150
150
Max. operating junction temperature
Notes:
(1)
Pulse width limited by safe operating area
Table 3: Thermal data
Parameter
Symbol
Value
Unit
°C/W
R
thj-pcb
47
Thermal resistance junction-pcb max
Notes:
(1)
When mounted on 1inch² FR-4 board, 2 oz Cu
For the P-channel Power MOSFET the actual polarity of the voltages and the
current must be reversed.
DocID025143 Rev 3
3/15
Electrical characteristics
STS9P2UH7
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4: On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
20
V
V
(BR)DSS
V
GS
= 0, I
D
= 250 µA
Zero gate voltage
drain current
1
µA
µA
I
DSS
V
GS
= 0, V
DS
= 20 V
V
DS
= 0, V
GS
= ± 5 V
Gate-body leakage
current
± 5
I
GSS
0.4
1
V
Ω
Ω
Ω
Ω
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 4.5 V, I
D
= 4.5 A
V
GS
= 2.5 V, I
D
= 4.5 A
V
GS
= 1.8 V, I
D
= 4.5 A
V
GS
= 1.5 V, I
D
= 4.5 A
0.0195
0.02
0.0225
0.025
0.043
0.085
Static drain-source on-
resistance
R
DS(on)
0.036
0.05
Table 5: Dynamic
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
–
–
–
–
–
–
2390
–
pF
C
iss
Input capacitance
Output capacitance
V
GS
= 0, V
DS
= 16 V,
f = 1 MHz
220
188
22
–
–
–
–
–
pF
pF
nC
nC
nC
C
oss
C
rss
Q
g
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 16 V, I
D
= 9 A,
V
GS
= 4.5 V
4.2
3.6
Q
gs
Q
gd
Table 6: Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Rise time
Min.
Typ.
Max
Unit
–
–
–
–
12.5
30.5
128
–
ns
t
d(on)
–
–
–
ns
ns
ns
t
r
t
d(off)
t
f
V
DD
= 16 V, I
D
= 9 A,
R
G
= 1 Ω, V
GS
= 4.5 V
Turn-off delay time
Fall time
84.5
4/15
DocID025143 Rev 3
STS9P2UH7
Electrical characteristics
Min. Typ. Max. Unit
Table 7: Source drain diode
Test conditions
Symbol
Parameter
Forward on voltage
Reverse recovery time
V
SD
–
1
V
V
GS
= 0, I
SD
= 1 A
–
–
–
15.8
5.9
ns
nC
A
t
rr
V
DD
= 16 V
Q
rr
Reverse recovery charge
Reverse recovery current
di/dt = 100 A/µs, I
SD
= 1 A
0.7
I
RRM
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
For the P-channel Power MOSFET the actual polarity of the voltages and the
current must be reversed.
DocID025143 Rev 3
5/15
Electrical characteristics
STS9P2UH7
2.1
Electrical characteristics (curves)
Figure 3: Thermal impedance
Figure 2: Safe operating area
GIPG210520141
0
1
1
SA
I
D
(A)
δ
0.2
0.1
100µs
1ms
10
1
0.05
0.02
10ms
0.01
pcb
0.1
Tj=150°C
Tpcb=25°C
Single pulse
0.01
V
DS
(V)
0.1
1
10
Figure 4: Output characteristics
Figure 5: Transfer characteristics
GIPG210520141044
S
A
GIPG210520141055
S
A
I
D
I
D
(A)
V
G
S
=2.5, 3, 3.5, 4, 4.5, 5V
(A)
V
DS
=2V
20
12.00
8.00
2V
15
10
5
1.5V
4.00
0.00
0
0.5
6
8
V
DS
(V)
2
0
2
4
0
1
1.5
V
G
S
(V)
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
GIPG210520141043
S
A
GIPG2105201
4
1
102SA
V
GS
R
DS(on)
(V)
(m
Ω
)
V
DD
=16V
V
G
S
=4.5V
20.5
I
D
=9A
4
20.0
19.5
3
2
19.0
18.5
18.0
1
0
15
2
3
4
5
1
6
0
5
10
20
Q
g
(nC)
I
D
(A)
0
6/15
DocID025143 Rev 3
STS9P2UH7
Electrical characteristics
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 8: Capacitance variations
C
GIPG2105201
4
1
108SA
GIPG2105201
4
1
114SA
V
GS(th)
(norm)
(pF)
I
D
=250µ A
1.4
Ciss
1.2
1
1000
0.8
0.6
Coss
Crss
0.4
0.2
100
0
12
4
8
16
V
DS
(V)
-75
-25
75
T
J
(°C)
125
25
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
GIPG2105201
4
1
119SA
GIPG2105201
4
1
1
32SA
R
DS(on)
V
(BR)DSS
(norm)
(norm)
I
D
=4.
5
A
1.6
I
D
=1
m
A
V
G
S
=4.5V
1.4
1.04
1.2
1.0
0.8
0.6
0.4
1
0.96
0.92
0.2
0.0
-75
-75
-25
75
T
J
(°C)
-25
75
T
J
(°C)
125
125
25
25
Figure 12: Source-drain diode forward characteristics
GIPG2105201
4
1
1
34SA
(V)
V
SD
T
J
=-55°C
0.9
T
J
=25°C
0.8
0.7
T
J
=75°C
0.6
0.5
1
2
3
4
5
6
7
8
I
SD
(A)
DocID025143 Rev 3
7/15
Test circuits
STS9P2UH7
3
Test circuits
Figure 13: Switching times test circuit for
resistive load
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching and diode recovery times
8/15
DocID025143 Rev 3
STS9P2UH7
Package mechanical
data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
4.1
SO-8 package mechanical data
Figure 16: SO-8 drawing
DocID025143 Rev 3
9/15
Package mechanical
data
STS9P2UH7
Table 8: SO-8 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
1.75
0.25
0.10
1.25
0.31
0.28
0.10
0.10
4.80
5.80
3.80
0.51
0.48
0.25
0.23
5.00
6.20
4.00
b1
c
c1
D
4.90
6.00
3.90
1.27
E
E1
e
h
0.25
0.40
0.50
1.27
L
L1
L2
k
1.04
0.25
0°
8°
ccc
0.10
10/15
DocID025143 Rev 3
STS9P2UH7
Package mechanical
data
Figure 17: SO-8 recommended footprint
DocID025143 Rev 3
11/15
Packaging mechanical
data
STS9P2UH7
5
Packaging mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
5.1
SO-8 tape and reel mechanical data
Figure 18: SO-8 tape and reel dimensions
12/15
DocID025143 Rev 3
STS9P2UH7
Packaging mechanical
data
Table 9: SO-8 tape and reel mechanical data
mm
Dim.
Min.
Typ.
Max.
A
C
–
330
12.8
20.2
60
–
–
–
–
–
–
–
–
–
13.2
D
N
T
22.4
8.5
5.9
2.3
4.1
8.1
Ao
Bo
Ko
Po
P
8.1
5.5
2.1
3.9
7.9
DocID025143 Rev 3
13/15
Revision history
STS9P2UH7
6
Revision history
Table 10: Document revision history
Changes
Date
Revision
27-Aug-2013
1
First release.
Document status promoted from preliminary data to production data
Modified: title
Modified: R
DS(on)
max value in cover page
04-Jun-2014
12-Jan-2015
2
3
Minor text changes
Updated title, features and description in cover page.
14/15
DocID025143 Rev 3
STS9P2UH7
IMPORTANT NOTICE
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PLEASE READ CAREFULLY
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der
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics
–
All rights reserved
DocID025143 Rev 3
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