STMicroelectronics-STU13005N

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STMicroelectronics-STU13005N
STU13005N  
High voltage fast-switching NPN power transistor  
Datasheet  
–
production data  
Features  
•
High voltage capability  
•
Low spread of dynamic parameters  
•
Very high switching speed  
3
Application  
2
1
•
Switch mode power supplies (AC-DC  
converters)  
IPAK  
Description  
This device is manufactured using high voltage  
multi epitaxial planar technology for high  
switching speeds and high voltage capability. It  
uses a cellular emitter structure with planar edge  
termination to enhance switching speeds while  
maintaining a wide RBSOA.  
Figure 1. Internal schematic diagram  
Table 1. Device summary  
Order code  
Marking  
Package  
Packaging  
STU13005N  
U13005N  
IPAK  
Tube  
May 2014  
DocID 022832 Rev 2  
1/11  
This is information on a product in full production.  

Contents  
STU13005N  
Contents  
1
2
Electrical ratings
 
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics
 
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
5  
3
4
5
Test circuits
 
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Revision history
 
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
2/11  
DocID 022832 Rev 2  

STU13005N  
Electrical ratings  
1
Electrical ratings  
Table 2. Absolute maximum ratings  
Symbol  
Parameter  
Value  
Unit  
V

CES  

V

CEO  

V

EBO  

I

C  

Collector-emitter voltage (V

BE

= 0)  
Collector-emitter voltage (I

B

= 0)  
Emitter-base voltage (I

C

= 0; I

B

= 1.5 A; t

p

< 10 ms)  
Collector current  
700  
V
V
400  
V

(BR)EBO  

V
3
A
I

CM  

Collector peak current (t

P

< 5 ms)  
Base current  
6
A
I

B  

1.5  
A
I

BM  

Base peak current (t

P

< 5 ms)  
T
o
tal dissipation at T

c

= 25 °C  
Storage temperature  
3
30  
A
P

TOT  

T

STG  

T

J  

W
°C  
°C  
-65 to 150  
150  
Max. operating junction temperature  
Table 3. Thermal data  
Parameter  
Symbol  
Value  
Unit  
R

thJC  

Thermal resistance junction-case max  
4.2  
°C/W  
DocID 022832 Rev 2  
3/11  
11  

Electrical characteristics  
STU13005N  
2
Electrical characteristics  
T

case

= 25 °C unless otherwise specified.  
Table 4. Electrical characteristics  
Symbol  
Parameter  
Test conditions  

CE

= 700 V  
Min. Typ. Max. Unit  
Collector cut-off current  
(V

BE

= 0)  
V
1
5
mA  
mA  
I

CES  

V

CE

= 700 V
 
T

C

= 125 °C  
Collector-cut-off current  
(I

B

= 0)  
I

CEO  

V

CE

= 400 V  
1
mA  
V
Emitter base breakdown  
voltage  
V

(BR)EBO  

I

E

= 10 mA  
I

C

= 10 mA  
9
18  
(I

C

= 0)  
Collector-emitter  
sustaining voltage  
(1)  
V

CEO(sus)  

400  
V
(I

B

= 0)  
I

C

= 1A  
_
I

B

= 200 mA  
0.5  
0.6  
5
V
V
V
Collector-emitter  
saturation voltage  
(1)  
V

CE(sat)  

I

C

= 2A
 
_ _
 
I

B

= 500 mA  
I

C

= 3A
 
_ _
 
I

B

= 750 mA  
I

C

= 1A  
_
I

B

= 200 mA  
1.2  
1.6  
V
V
Base-emitter saturation  
voltage  
(1)  
V

BE(sat)  

I

C

= 2A
 
_ _
 
I

B

= 500 mA  
I

C

= 500 µA
_  
I

C

= 425 mA  
I

C

= 1 A  
V

CE

= 2 V  
V

CE

= 2 V  
V

CE

= 5 V  
15  
24  
10  
8
(1)  
h

FE  

DC current gain  
_
30  
24  
I

C

= 2 A
 
_ _
 
V

CE

= 5 V  
Resistive load  
Storage time  
Fall time  
I

C

= 2 A  
V

CC

= 125 V  
t

s  

t

f  

I

B1

= -I

B2

= 400 mA  
1.65  
260  
µs  
ns  
t

p

= 30 µs  
Inductive load  
Storage time  
Fall time  
I

C

= 1 A  
V

clamp

= 300 V  
t

s  

t

f  

I

B1

= 200 mA V

BE(off)

= -5 V  
L = 50 mH
 

BB

= 0  
0.8  
µs  
ns  
R
150  
1. Pulse
 
test: pulse duration
≤
300 µs, duty cycle
≤
2 %  
4/11  
DocID 022832 Rev 2  

STU13005N  
Electrical characteristics  
2.1  
Electrical characteristics (curves)  
Figure 2. Safe operating area  
Figure 3. Derating curve  
Figure 4. Reverse biased SOA  
Figure 5. Output characteristics  
Figure 6. DC current gain (V

CE

= 1 V)  
Figure 7. DC current gain (V

CE

= 5 V)  
DocID 022832 Rev 2  
5/11  
11  

Electrical characteristics  
STU13005N  
Figure 8. Collector-emitter saturation voltage  
Figure 9. Base-emitter saturation voltage  
Figure 10. Inductive load fall time  
Figure 11. Inductive load storage time  
Figure 12. Resistive load fall time  
Figure 13. Resistive load storage time  
6/11  
DocID 022832 Rev 2  

STU13005N  
Test circuits  
3
Test circuits  
Figure 14. Inductive load switching test circuit  
1) Fast electronic switch  
2) Non-inductive resistor  
3) Fast recovery rectifier  
Figure 15. Resistive load switching test circuit  
1) Fast electronic switch  
2) Non-inductive resistor  
DocID 022832 Rev 2  
7/11  
11  

Package mechanical data  
STU13005N  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK

®  

specifications, grade definitions and product status are available at:

.  
ECOPACK

®

is an ST trademark.  
Figure 16. IPAK(TO-251 drawing)  
0068771_K  
8/11  
DocID 022832 Rev 2  

STU13005N  
Package mechanical data  
Table 5. IPAK (TO-251) mechanical data  
mm.  
typ.  
DIM  
min.  
max.  
A
A1  
b
2.20  
0.90  
0.64  
2.40  
1.10  
0.90  
0.95  
5.40  
b2  
b4  
B5  
c
5.20  
0.30  
0.45  
0.48  
6.00  
6.40  
0.60  
0.60  
6.20  
6.60  
c2  
D
E
e
2.28  
e1  
H
4.40  
4.60  
16.10  
L
9.00  
0.80  
9.40  
1.20  
1.00  
L1  
L2  
V1  
0.80  
10°  
DocID 022832 Rev 2  
9/11  
11  

Revision history  
STU13005N  
5
Revision history  
Table 6. Document revision history  
Changes  
Date  
Revision  
20-Feb-2012  
1
First release.  
Updated
T
a
ble 1: Device summary
and updated
Figure 4: Package  
mechanical data  
09-May-2014  
2
10/11  
DocID 022832 Rev 2  

STU13005N  
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DocID 022832 Rev 2  
11/11  
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