STMicroelectronics-STU16N65M5
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STF16N65M5, STI16N65M5
STP16N65M5,STU16N65M5,STW16N65M5
N-channel 650
V
,
0
.230
Ω
, 12 A MDmesh™ V Power MOSFET
in TO-220F
P
,
I
²
P
A
K, TO-220, I
P
A
K, TO-247
Features
T
A
B
T
A
B
V
DSS
T
Jmax
@
R
DS(on)
max
Type
I
D
3
3
3
2
2
1
2
1
STF16N65M5
STI16N65M5
STP16N65M5
STU16N65M5
STW16N65M5
1
TO-220FP
TO-220
I²
P
A
K
710 V
< 0.279
Ω
12 A
TAB
3
2
3
1
■
Worldwide best R
2
1
DS(on)
I
P
A
K
■
Higher V
rating
DSS
TO-247
■
High dv/dt capability
■
Excellent switching performance
■
Easy to drive
Figure 1.
Internal schematic diagram
■
100% avalanche tested
$ꢅꢆꢇ
4
!
“ꢈ
Applications
■
Switching applications
Description
‘ꢅꢁꢈ
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technolog
y
,
w
hich is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
3ꢅꢉꢈ
!-ꢀꢁꢂꢃꢄVꢁ
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficienc
y
.
Table 1.
Device summary
Order codes
Marking
Package
TO-220FP
Packaging
STF16N65M5
STI16N65M5
STP16N65M5
STU16N65M5
STW16N65M5
I²
P
A
K
TO-220
I
P
A
K
16N65M5
T
u
be
TO-247
October 2011
Doc ID 15210 Rev 4
1/20
20
Contents
STF/I/P/U/W16N65M5
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/20
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220, I²
P
A
K,
I
P
A
K, TO-247
TO-220FP
V
DS
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Gate-source voltage
650
25
V
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
12
(1)
7.3
(1)
48
(1)
90
12
7.3
48
25
A
I
D
A
(2)
I
DM
A
P
TOT
I
AR
T
o
tal dissipation at T
C
= 25 °C
W
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
j
max)
4
A
Single pulse avalanche energy
E
AS
200
15
mJ
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
dv/dt
(3)
Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
C
= 25 °C)
V
ISO
2500
V
T
stg
T
j
Storage temperature
– 55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited
by maximum junction temperature
2. Pulse
width limited by safe operating area
3. I
SD
≤
12 A, di/dt
≤
400 A/µs, V
DD
= 400 V, V
Peak
< V
(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Value
TO-220FP I²
P
A
K TO-220
I
P
A
K TO-247
Unit
Thermal resistance junction-case
max
R
thj-case
R
thj-amb
T
l
5
1.38
100
°C/W
°C/W
°C
Thermal resistance junction-
ambient max
62.5
50
Maximum lead temperature for
soldering purpose
300
Doc ID 15210 Rev 4
3/20
Electrical characteristics
STF/I/P/U/W16N65M5
2
Electrical characteristics
(T =
25 °C unless otherwise specified)
C
Table 4.
Symbol
On /off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
V
(BR)DSS
breakdown voltage
(V
GS
= 0)
I
D
= 1 mA
DS
= 650 V
650
V
Zero gate voltage
I
DSS
V
1
µA
µA
drain current (V
GS
= 0)
V
DS
= 650
V
,
T
C
=125 °C
100
Gate-body leakage
I
GSS
V
GS
=
25 V
100
5
nA
V
current (V
DS
= 0)
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
3
4
Static drain-source on
V
GS
= 10
V
,
I
D
= 6 A
resistance
0.230 0.279
Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
C
iss
C
oss
C
rss
1250
30
pF
V
DS
= 100
V
, f = 1
M
Hz,
V
GS
= 0
Output capacitance
–
–
–
pF
pF
Reverse transfer
capacitance
3
Equivalent
capacitance time
related
(1)
C
o(tr)
–
100
pF
V
DS
= 0 to 520
V
,
V
GS
= 0
f = 1 MHz open drain
Equivalent
capacitance energy
related
(2)
C
o(er)
–
–
30
2
–
–
pF
Intrinsic gate
resistance
R
G
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 520
V
,
I
D
= 6 A,
V
GS
= 10 V
31
8
nC
nC
nC
–
–
12
1. C
oss eq.
time related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
2. C
oss eq.
energy related is defined as a constant equivalent capacitance giving the same stored energy as
C
oss
when V
DS
increases from 0 to 80% V
DSS
4/20
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min. Typ.
Max Unit
t
d
(v)
t
r
(v)
t
f
(i)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
V
DD
= 400
V
,
I
D
= 8 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
25
ns
7
ns
–
–
6
ns
t
c
(off)
8
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max.
Unit
I
SD
Source-drain current
12
48
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
(2)
V
SD
Forward on voltage
I
SD
= 12 A, V
GS
= 0
1.5
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
300
3.5
23
ns
µC
A
I
SD
= 12 A, di/dt = 100 A/µs
Q
rr
–
–
I
RRM
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 12 A, di/dt = 100 A/µs
V
DD
= 100
V
,
T
j
= 150 °C
350
4
ns
µC
A
Q
rr
I
RRM
24
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15210 Rev 4
5/20
Electrical characteristics
STF/I/P/U/W16N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220FP
Figure 3.
Thermal impedance for TO-220FP
AM0
8
611v1
I
D
(A)
10
10
µs
100
µs
1
1m
s
10m
s
0.1
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 4.
Safe operating area for TO-220,
I²
P
A
K, TO-247
Figure 5.
Thermal impedance for TO-220,
I²
P
A
K, TO-247
AM0
8
610v1
I
D
(A)
10
10
µs
100
µs
1
1m
s
10m
s
0.1
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 6.
Safe operating area for I
P
A
K
Figure 7.
Thermal impedance for I
P
A
K
AM0
8
609v1
I
D
(A)
10
µs
10
100
µs
1
1m
s
10m
s
0.1
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
6/20
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM0
3
17
8
v1
AM0
3
179v1
I
D
(A)
I
D
(A)
V
G
S
=10V
V
D
S
=10V
7.5V
7V
20
20
15
10
15
6.5V
6V
10
5
5
0
5.5V
0
0
2
4
6
8
10 12 14 16 1
8
V
D
S
(V)
7
8
9
V
G
S
(V)
4
5
6
3
Figure 10.
Normalized B
vs temperature
Figure 11.
Static drain-source on resistance
VDSS
AM0
3
1
8
7v1
AM0
3
1
8
1v1
BV
D
SS
R
D
S
(on)
(
Ω
)
(norm)
I
D
=1mA
V
G
S
=10V
1.07
1.05
0.245
0.240
1.0
3
0.2
3
5
1.01
0.99
0.2
3
0
0.225
0.220
0.97
0.95
0.9
3
0.215
0.210
-50
10 12
I
-25
0
25 50 75
T
J
(°C)
0
4
6
8
D
(A)
100
2
Figure 12.
Output capacitance stored energy
Figure 13.
Capacitance variations
AM0
33
12v1
AM0
3
1
83
v1
E
o
ss
C
(
µ
J)
(pF)
7
6
5
10000
1000
Ci
ss
4
3
2
100
10
1
Co
ss
Cr
ss
1
0
200
100
400 500
0.1
100
0
3
00
600 V
D
S
(V)
1
10
V
D
S
(V)
Doc ID 15210 Rev 4
7/20
Electrical characteristics
STF/I/P/U/W16N65M5
Figure 14.
Gate charge vs gate-source voltage
Figure 15.
Normalized on resistance vs
temperature
AM0
3
1
8
2v1
AM0
3
1
8
5v1
V
(V)
G
S
R
D
S
(on)
(norm)
V
DD
=520V
=6A
V
G
S
=10V
2.1
I
D
I
D
=6.5V
12
500
400
3
00
200
100
V
D
S
1.9
1.7
10
8
1.5
1.
3
1.1
6
4
0.9
0.7
0.5
2
0
25
3
0
3
5
-50
T
J
(°C)
0
5
10 15 20
Q
g
(nC)
0
50
100
Figure 16.
Normalized gate threshold voltage
Figure 17.
Source-drain diode forward
vs temperature
characteristics
AM0
3
1
8
4v1
AM0
3
1
8
6v1
V
G
S
(th)
V
S
D
(V)
(norm)
I
D
=250
µ
A
1.10
1.00
0.90
1.0
T
J
=-25°C
0.9
0.
8
T
J
=25°C
T
J
=150°C
0.7
0.6
0.
8
0
0.5
0.4
0.70
-50
0
T
J
(°C)
I
S
D
(A)
0
50
5
10
100
Figure 18.
Switching losses vs gate resistance
(1)
AM10
3
59v1
E
(
μ
J)
100
Eon
8
0
60
Eoff
40
20
0
0
20
3
0
40
10
R
G
(
Ω
)
1. Eon
including reverse recovery of a SiC diode
8/20
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
Test circuits
3
Test circuits
Figure 19.
Switching times test circuit for
resistive load
Figure 20.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 21.
Test circuit for inductive load
switching and diode recovery times
Figure 22.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 23.
Unclamped inductive waveform
Figure 24.
Switching time waveform
Concept w
a
veform for Ind
u
ctive Lo
a
d
T
u
rn-off
V
(BR)D
SS
Id
V
D
90
%
Vd
s
90
%
Id
Tdel
a
y-off
I
DM
Vg
s
90
%
Vg
s
10
%
Vd
s
on
I
D
Vg
s
(I(t))
V
DD
V
DD
10
%
Id
Vd
s
Tri
s
e
Tf
a
ll
Tcro
ss
-over
AM01472v1
AM05540v1
Doc ID 15210 Rev 4
9/20
Package mechanical data
STF/I/P/U/W16N65M5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
is an ST trademark.
10/20
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
Package mechanical data
Table 8.
Dim.
TO-220FP mechanical data
Min.
mm
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 25.
TO-220FP drawing
L7
E
A
B
D
Di
a
L5
L6
F2
F1
F
G
H
G1
L4
L2
L
3
7012510_Rev_K
Doc ID 15210 Rev 4
11/20
Package mechanical data
STF/I/P/U/W16N65M5
Table 9.
DIM.
I²
P
A
K (TO-262) mechanical data
mm.
typ
min.
max.
A
A1
b
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
Figure 26.
I²
P
A
K (TO-262) drawing
00049
8
2_Rev_H
12/20
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
Package mechanical data
Table 10.
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
Doc ID 15210 Rev 4
13/20
Package mechanical data
Figure 27.
TO-220 type A drawing
STF/I/P/U/W16N65M5
00159
88
_typeA_Rev_
S
14/20
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
Package mechanical data
Table 11.
IPAK (TO-251) mechanical data
mm.
typ
DIM.
min.
max.
A
A1
b
2.20
0.90
0.64
2.40
1.10
0.90
0.95
5.40
b2
b4
5.20
0.3
B5
c
c2
D
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
1.20
1.00
L1
L2
V1
0.80
10
o
Doc ID 15210 Rev 4
15/20
Package mechanical data
Figure 28.
I
P
A
K (TO-251) drawing
STF/I/P/U/W16N65M5
006
8
771_H
AM09214V1
16/20
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
Package mechanical data
Table 12.
TO-247 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
b1
b2
c
2.0
3.0
0.40
19.85
15.45
D
E
e
5.45
18.50
5.50
L
14.20
3.70
14.80
4.30
L1
L2
∅
P
∅
R
S
3.55
4.50
3.65
5.50
Doc ID 15210 Rev 4
17/20
Package mechanical data
Figure 29.
TO-247 drawing
STF/I/P/U/W16N65M5
0075
3
25_F
18/20
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
Revision history
5
Revision history
Table 13.
Document revision history
Date
Revision
Changes
12-Feb-2009
1
First release.
– Document status promoted from preliminary data to datasheet.
– Added new package, mechanical data: I²
P
A
K.
21-Oct-2010
10-Feb-2011
2
3
– Removed D
P
A
K, D²
P
A
K packages and mechanical data.
13-Oct-2011
4
Minor text changes.
Doc ID 15210 Rev 4
19/20
STF/I/P/U/W16N65M5
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