STMicroelectronics-STU65N3LLH5
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STD65N3LLH5
STU65N3LLH5
N-channel 30
V
,
0
.0061
Ω
, 65 A, D
P
A
K, I
P
A
K
S
T
r
ipFET™ V Power MOSFET
Features
Type
V
DSS
R
DS(on)
max
I
D
STD65N3LLH5
STU65N3LLH5
30 V
30 V
0.0069
Ω
0.0073
Ω
65 A
65 A
3
■
R
* Q
industry benchmark
3
DS(on)
g
2
1
1
■
Extremely low on-resistance R
DS(on)
■
Very low switching gate charge
■
High avalanche ruggedness
■
Low gate drive power losses
DPAK
IPAK
Application
Switching applications
Figure 1.
Internal schematic diagram
Description
This S
T
r
ipFET™V Power
MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the
best-in-class
figure of merit.
Table 1.
Device summary
Order code
Marking
Package
D
P
A
K
I
P
A
K
Packaging
STD65N3LLH5
STU65N3LLH5
65N3LLH5
65N3LLH5
T
a
pe and reel
T
u
be
May 2011
Doc ID 17281 Rev 1
1/17
17
Contents
STD65N3LLH5, STU65N3LLH5
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
Doc ID 17281 Rev 1
STD65N3LLH5, STU65N3LLH5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
DS
V
GS
I
D
Drain-source voltage (V
GS
=0)
Gate-source voltage
30
22
V
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
65
A
I
D
46
A
(1)
I
DM
260
50
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Derating factor
W
0.3
TBD
W/°C
mJ
(2)
E
AS
Single pulse avalanche energy
T
j
Operating junction temperature
Storage temperature
-55 to 175
°C
T
stg
1. Pulse
width limited by safe operating area.
2. Starting
Tj = 25 °C, Id = 32.5 A, Vdd = 12 V.
Table 3.
Symbol
Thermal resistance
Parameter
Value
Unit
Rthj-case Thermal
resistance junction-case max
Rthj-amb Thermal
resistance junction-case max
3
°C/W
°C/W
°C
100
275
T
j
Maximum lead temperature for soldering purpose
Doc ID 17281 Rev 1
3/17
Electrical characteristics
STD65N3LLH5, STU65N3LLH5
2
Electrical characteristics
(T
= 25 °C unless otherwise specified).
CASE
Table 4.
Symbol
Static
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source breakdown
Voltage
V
(BR)DSS
I
D
= 250 µA, V
GS
= 0
30
V
V
DS
= 30 V
1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= 30
V
,
Tc = 125 °C
10
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
=
22 V
±
100
nA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
GS
= 10
V
,
I
D
= 32.5 A
SMD version
GS
= 10
V
,
I
D
= 32.5 A
1
1.8
3
V
0.0061 0.0069
0.0065 0.0073
0.0084 0.0093
0.0088 0.0097
Ω
Ω
Ω
Ω
V
Static drain-source on
resistance
R
DS(on)
V
GS
= 4.5
V
,
I
D
= 32.5 A
SMD version
V
GS
= 4.5
V
,
I
D
= 32.5 A
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
1290
240
32
pF
V
DS
=25
V
,
f
=1 MHz,
V
GS
=0
–
–
–
pF
pF
Reverse transfer
capacitance
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
=15
V
,
I
D
= 65 A
V
GS
=4.5 V
8
nC
nC
nC
–
3.6
3.4
f=1 MHz Gate DC Bias=0
test signal level = 20 mV
open drain
R
g
Intrinsic gate resistance
1.7
Ω
4/17
Doc ID 17281 Rev 1
STD65N3LLH5, STU65N3LLH5
Electrical characteristics
Table 6.
Symbol
Switching on/off (resistive load)
Parameter
Test conditions
Min. Typ.
Max. Unit
V
DD
=10
V
,
I
D
= 65 A,
t
d(on)
t
r
T
u
rn-on delay time
8.6
ns
R
G
=4.7
Ω
,
V
GS
= 10 V
–
–
Rise time
11.2
ns
V
DD
=10
V
,
I
D
= 25 A,
t
d(off)
t
f
T
u
rn-off delay time
Fall time
32.4
ns
R
G
=4.7
Ω
,
V
GS
= 10 V
–
–
6
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ.
Max. Unit
I
SD
Source-drain current
65
A
A
–
–
I
SDM
Source-drain current (pulsed)
(1)
260
V
SD
Forward on voltage
I
SD
=32.5 A, V
GS
=0
I
SD
=32.5 A,
1.1
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
22
15
ns
nC
A
Q
rr
–
di/dt =100 A/µs,
I
RRM
1.4
1. Pulsed:
pulse duration = 300µs, duty cycle 1.5%.
Doc ID 17281 Rev 1
5/17
Electrical characteristics
STD65N3LLH5, STU65N3LLH5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM064
8
6v2
I
D
(A)
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
s
i
a
re
a
100
s
x R
a
tion in
y
t
h
m
i
b
a
100
µs
1m
s
Oper
Limited
10
1
10m
s
0.1
10
V
D
S
(V)
0.1
1
100
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
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Normalized B
vs temperature
Figure 7.
Static drain-source on resistance
VDSS
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6/17
Doc ID 17281 Rev 1
STD65N3LLH5, STU65N3LLH5
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage
Figure 9.
Capacitance variations
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Figure 10.
Normalized gate threshold voltage
Figure 11.
Normalized on resistance vs
vs temperature
temperature
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Source-drain diode forward
characteristics
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Doc ID 17281 Rev 1
7/17
Test circuits
STD65N3LLH5, STU65N3LLH5
3
Test circuits
Figure 13.
Switching times test circuit for
resistive load
Figure 14.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k
Ω
2200
3
.
3
µ
F
R
L
µ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
D
R
G
V
G
S
2200
µ
F
D.U.
T
.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 15.
Test circuit for inductive load
switching and diode recovery times
Figure 16.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
µ
H
V
D
G
2200
µ
F
D.U.
T
.
B
3
.
3
µ
F
V
DD
S
3
.
3
µ
F
1000
µ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 17.
Unclamped inductive waveform
Figure 18.
Switching time waveform
t
on
td
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
8/17
Doc ID 17281 Rev 1
STD65N3LLH5, STU65N3LLH5
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
ECO
P
ACK is an ST trademark.
Doc ID 17281 Rev 1
9/17
Package mechanical data
STD65N3LLH5, STU65N3LLH5
Table 8.
Dim.
D
P
A
K (TO-252) mechanical data
mm
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0°
1
0.20
V2
8°
(a)
Figure 19.
D
P
A
K footprint
6.7
3
1.
8
1.6
2.
3
2.
3
6.7
1.6
AM0
88
50v1
a. All
dimension are in millimeters
10/17
Doc ID 17281 Rev 1
STD65N3LLH5, STU65N3LLH5
Figure 20.
D
P
A
K (TO-252) drawing
Package mechanical data
006
8
772_G
Doc ID 17281 Rev 1
11/17
Package mechanical data
STD65N3LLH5, STU65N3LLH5
Table 9.
Dim.
I
P
A
K (TO-251) mechanical data
mm.
Typ.
Min.
Max.
A
A1
b
2.20
0.90
0.64
2.40
1.10
0.90
0.95
5.40
b2
b4
5.20
0.3
B5
c
c2
D
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
1.20
1.00
L1
L2
V1
0.80
10
o
12/17
Doc ID 17281 Rev 1
STD65N3LLH5, STU65N3LLH5
Figure 21.
I
P
A
K (TO-251) drawing
Package mechanical data
006
8
771_H
AM09214V1
Doc ID 17281 Rev 1
13/17
Packaging mechanical data
STD65N3LLH5, STU65N3LLH5
5
Packaging mechanical data
Table 10.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qt
y
.
Bulk qt
y
.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
14/17
Doc ID 17281 Rev 1
STD65N3LLH5, STU65N3LLH5
Figure 22.
Tape for D
P
A
K (TO-252)
Packaging mechanical data
10 pitche
s
c
u
m
u
l
a
tive
toler
a
nce on t
a
pe +/- 0.2 mm
P0
D
Top cover
t
a
pe
P2
T
E
F
W
K0
B1
B0
For m
a
chine ref. only
incl
u
ding dr
a
ft
a
nd
A0
D1
P1
r
a
dii concentric
a
ro
u
nd B0
U
s
er direction of feed
R
Bending r
a
di
us
U
s
er direction of feed
AM0
88
52v1
Figure 23.
Reel for D
P
A
K (TO-252)
T
REEL DIMEN
S
ION
S
40mm min.
Acce
ss
hole
At
s
l ot
loc
a
tion
B
D
C
N
A
G me
asu
red
a
t h
ub
F
u
ll r
a
di
us
T
a
pe
s
lot
in core for
t
a
pe
s
t
a
rt 25 mm min.
width
AM0
88
51v2
Doc ID 17281 Rev 1
15/17
Revision history
STD65N3LLH5, STU65N3LLH5
6
Revision history
Table 11.
Document revision history
Date
Revision
Changes
19-May-2011
1
First release.
16/17
Doc ID 17281 Rev 1
STD65N3LLH5, STU65N3LLH5
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Doc ID 17281 Rev 1
17/17
