STMicroelectronics-STU7NF25
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STU7NF25
N-channel 250
V
, 0.29
Ω
typ., 8 A STripFET™ II Power MOSFET
in IPAK package
Datasheet
–
production data
Features
Order code
V
DSS
R
DS(on)
max.
I
D
TAB
STU7NF25
250 V
0.42
Ω
8 A
•
100% avalanche tested
3
•
175 °C junction temperature
2
1
Applications
IPAK
•
Switching applications
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer
Figure 1. Internal schematic diagram
‘ꢅꢆĆRUĆ7$%ꢇ
applications, and applications with low gate
charge driving requirements.
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Table 1. Device summary
Order code
Marking
7NF25
Package
Packaging
STU7NF25
IPAK
Tube
July 2013
DocID025041 Rev 1
1/12
This is information on a product in full production.
Contents
STU7NF25
Contents
1
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
2/12
DocID025041 Rev 1
STU7NF25
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
DS
V
GS
Drain-source voltage
250
±20
8
V
V
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
=100 °C
Drain current (pulsed)
A
I
D
6
A
(1)
I
DM
32
72
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
W
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 175
°C
1. Pulse
width limited by safe operating area.
Table 3. Thermal data
Parameter
Symbol
Value
Unit
R
thj-case
R
thj-amb
Thermal resistance junction-case
2.08
100
°C/W
Thermal resistance junction-amb max
Table 4. Avalanche data
Symbol
Parameter
Value
Unit
I
AV
Non-repetitive avalanche current
8
A
Single pulse avalanche energy (starting
T
J
=25 °C, I
D
=I
AV
, V
DD
=50 V)
E
AS
110
mJ
DocID025041 Rev 1
3/12
12
Electrical characteristics
STU7NF25
2
Electrical characteristics
(T
CASE
=25 °C unless otherwise specified).
Table 5. On/off states
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
250
–
–
V
V
DS
= 250 V
V
DS
= 250
V
, T
c
=125 °C
1
50
μ
A
μ
A
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
= ±20 V
–
–
±
100
4
nA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10
V
, I
D
= 4 A
2
Static drain-source
R
DS(on)
0.29 0.42
Ω
on-resistance
Table 6. Dynamic
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
C
iss
Input capacitance
–
–
500
90
–
–
pF
pF
C
oss
Output capacitance
V
DS
=25 V, f=1 MHz, V
GS
=0
Reverse transfer
capacitance
C
rss
–
15
–
pF
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
16
3.5
8
–
–
–
nC
nC
nC
V
DD
= 200 V, I
D
= 8 A
V
GS
=10 V
Table 7. Switching times
Test conditions
Symbol
Parameter
Min. Typ. Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
13
10
26
6
–
–
–
–
ns
ns
ns
ns
V
DD
=125
V
,
I
D
=4 A,
R
G
=4.7
Ω,
V
GS
=10 V
Turn-off delay time
Fall time
4/12
DocID025041 Rev 1
STU7NF25
Electrical characteristics
Min. Typ.
Max. Unit
Table 8. Source drain diode
Test conditions
Symbol
Parameter
Source-drain current
I
SD
I
SDM
8
32
A
A
–
Source-drain current
(pulsed)
V
SD
t
rr
Forward on voltage
I
SD
=8 A, V
GS
=0 V
–
–
–
–
–
–
–
1.5
V
ns
nC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
115
470
8.5
I
SD
= 8 A, di/dt = 100 A/
μ
s,
V
DD
= 50 V
Q
rr
I
RRM
t
rr
130
580
9.5
ns
nC
A
I
SD
= 8 A, di/dt = 100 A/
μ
s,
V
DD
= 50 V, T
J
= 150 °C
Q
rr
I
RRM
DocID025041 Rev 1
5/12
12
Electrical characteristics
STU7NF25
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM11280v1
I
D
(A)
Tj=175°C
Tc=25°C
Single pulse
10µs
10
100µs
1
1ms
10ms
0.1
10
V
DS
(V)
0.1
1
100
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM11281v1
AM11282v1
I
D
(A)
I
D
(A)
V
GS
=10V
V
DS
=25V
20
20
6V
15
10
5
15
10
5
0
4V
25
0
0
5
2
20
V
DS
(V)
8
10
V
GS
(V)
10
15
0
4
6
Figure 6. Normalized B
VDSS
vs temperature
Figure 7. Static drain-source on-resistance
AM11283v1
AM11284v1
BV
DSS
(norm)
R
DS(on)
(
Ω
)
I
D
=1mA
V
GS
=10V
1.2
1.0
0.8
0.6
0.35
0.30
0.25
0.20
0.4
0.2
0
0.15
0.10
-100
0
1
2
3
4
5
6
7
8
-50
T
J
(°C)
I
D
(A)
0
50
150
100
6/12
DocID025041 Rev 1
STU7NF25
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
Figure 9. Capacitance variations
AM11285v1
AM11286v1
V
(V)
GS
C
(pF)
V
DS
(V)
V
DD
=200V
I
D
=8A
12
V
DS
200
1000
100
Ciss
10
8
150
100
Coss
Crss
6
4
2
0
10
1
50
0
8
16
0.1
100
12
Q
g
(nC)
1
10
V
DS
(V)
0
4
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on resistance vs
temperature
AM11287v1
AM11288v1
V
GS(th)
(norm)
R
DS(on)
(norm)
I
D
=4A
I
D
=250µA
V
GS
=10V
2.5
2.0
1.5
1.0
1.0
0.8
0.6
0.4
0.5
0
-100
-100
-50
0
50
T
J
(°C)
-50
0
50
T
J
(°C)
100 150
100
150
Figure 12. Source-drain diode forward
characteristics
AM11289v1
V
(V)
SD
T
J
=25°C
0.9
T
J
=-50°C
0.8
0.7
T
J
=175°C
0.6
0.5
0.4
0
2
4
6
8
I
SD
(A)
DocID025041 Rev 1
7/12
12
Test circuits
STU7NF25
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
t
on
t
off
td
off
V
(BR)DSS
t
r
t
f
td
on
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
8/12
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STU7NF25
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
ECOPACK is an ST trademark.
Table 9. IPAK (TO-251) mechanical data
mm.
DIM
min.
typ.
max.
A
A1
b
2.20
0.90
0.64
2.40
1.10
0.90
0.95
5.40
b2
b4
B5
c
5.20
0.30
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
1.20
1.00
L1
L2
V1
0.80
10°
DocID025041 Rev 1
9/12
12
Package mechanical data
STU7NF25
Figure 19. IPAK (TO-251) drawing
0068771_K
10/12
DocID025041 Rev 1
STU7NF25
Revision history
5
Revision history
Table 10. Document revision history
Date
Revision
Changes
24-Jul-2013
1
First release.
DocID025041 Rev 1
11/12
12
STU7NF25
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