STMicroelectronics-STU8NM50N
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STD8NM50N, STP8NM50N, STU8NM50N
N-channel 500
V
,
0
.73
Ω
typ., 5 A MDmesh™II Power MOSFET
in D
P
A
K, TO-220 and I
P
A
K packages
Datasheet — production data
Features
TAB
Order codes
V
DSS
@T
JMAX
R
DS(on)
max.
I
D
3
1
STD8NM50N
D
P
A
K
STP8NM50N
STU8NM50N
550 V
< 0.79
Ω
5 A
TAB
■
100% avalanche tested
TAB
■
Low input capacitance and gate charge
■
Low gate input resistance
3
3
2
2
1
1
I
P
A
K
TO-220
Applications
■
Switching applications
Figure 1.
Internal schematic diagram
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technolog
y
.
T
his revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
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4
!
“ꢈ
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3ꢅꢉꢈ
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Order codes
Marking
Packages
D
P
A
K
Packaging
STD8NM50N
STP8NM50N
STU8NM50N
T
a
pe and reel
T
u
be
8NM50N
TO-220
I
P
A
K
September 2012
Doc ID 17413 Rev 6
1/19
This is information on a product in full production.
19
Contents
STD8NM50N, STP8NM50N, STU8NM50N
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Drain-source voltage
Value
Unit
V
DS
V
GS
I
D
500
V
V
Gate-source voltage
25
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
T
o
tal dissipation at T
C
= 25 °C
5
A
I
D
3
45
A
P
TOT
W
dv/dt
(1)
Peak diode recovery voltage slope
15
V/ns
°C
°C
T
stg
T
j
Storage temperature
– 55 to 150
150
Max. operating junction temperature
1.
I
≤
7 A, di/dt
≤
400 A/µs, V
< V
, V
= 80% V
SD
Peak
(BR)DSS DS
(BR)DSS
T
a
ble 3.
Symbol
Thermal data
Parameter
Value
I
P
A
K
Unit
D
P
A
K
TO-220
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
R
thj-pcb
Thermal resistance junction-pcb max
2.78
100
°C/W
62.5
°C/W
°C/W
50
Maximum lead temperature for soldering
purpose
T
l
300
°C
T
a
ble 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
I
AR
2
A
Single pulse avalanche energy
E
AS
140
mJ
(starting T
j
= 25°C, I
D
= I
AR
, V
DD
= 50 V)
Doc ID 17413 Rev 6
3/19
Electrical characteristics
STD8NM50N, STP8NM50N, STU8NM50N
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
T
a
ble 5.
Symbol
On /off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
V
(BR)DSS
breakdown voltage
(V
GS
= 0)
I
D
= 1 mA
DS
= 500 V
500
V
Zero gate voltage
I
DSS
V
1
µA
µA
drain current (V
GS
= 0)
V
DS
= 500
V
,
T
C
= 125 °C
100
Gate-body leakage
I
GSS
V
GS
=
25 V
100 nA
current (V
DS
= 0)
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2
3
4
V
Static drain-source on
V
GS
= 10
V
,
I
D
= 2.5 A
resistance
0.73
0.79
Ω
T
a
ble 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
364
33
pF
V
DS
= 50
V
, f = 1
M
Hz,
–
–
pF
pF
V
GS
= 0
Reverse transfer
capacitance
1.2
Equivalent output
(1)
C
oss(eq)
V
DS
= 0 to 50
V
,
V
GS
= 0
f = 1 MHz open drain
–
–
–
147.5
–
–
pF
capacitance time
related
Intrinsic gate
resistance
R
G
5.4
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400
V
,
I
D
= 5 A,
V
GS
= 10 V
14
3
nC
nC
nC
–
7
1. Coss
eq. is defined as a constant equivalent capacitance giving the same charging time as C
when V
oss
DS
increases from 0 to 80% V
DSS
4/19
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
Electrical characteristics
T
a
ble 7.
Symbol
Switching times
Parameter
Test conditions
Min. Typ.
Max Unit
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
7
ns
V
DD
= 250
V
,
I
D
= 5 A,
4.4
ns
R
G
= 4.7
Ω
,
V
GS
= 10 V
–
–
T
u
rn-off-delay time
Fall time
25
ns
8.8
ns
T
a
ble 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max.
Unit
I
SD
Source-drain current
5
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
20
(2)
V
SD
Forward on voltage
I
SD
= 5 A, V
GS
= 0
1.5
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
187
1.3
14
ns
µC
A
I
SD
= 5 A, di/dt = 100 A/µs
Q
rr
–
–
I
RRM
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 5 A, di/dt = 100 A/µs
DD
= 60
V
,
T
j
= 150 °C
224
1.5
13
ns
µC
A
Q
rr
V
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Doc ID 17413 Rev 6
5/19
Electrical characteristics
STD8NM50N, STP8NM50N, STU8NM50N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for D
P
A
K and
Figure 3.
I
P
A
K
Thermal impedance for DPAK and
IPAK
AM07915v1
I
D
(A)
10
1
10
µs
100
µs
1m
s
10m
s
Tj=150°C
0.1
Tc=25°C
S
ingle
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 4.
Safe operating area for TO-220
Figure 5.
Thermal impedancefor TO-220
AM07916v1
I
D
(A)
10
1
10
µs
100
µs
1m
s
10m
s
Tj=150°C
Tc=25°C
0.1
S
ingle
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
AM07917v1
AM0791
8
v1
I
D
(A)
I
D
(A)
V
G
S
=10V
V
D
S
= 20 V
10
10
7V
8
6
4
8
6
4
6V
5V
2
0
2
0
2
20
3
0
V
D
S
(V)
8
V
G
S
(V)
0
10
0
4
6
6/19
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
Electrical characteristics
Figure 8.
Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage
AM07919v1
AM0
3
195v1
V
G
S
(V)
R
D
S
(on)
(
Ω
)
V
DD
=400 V
400
12
V
G
S
=10V
I
D
=5 A
0.77
0.76
0.75
3
50
V
D
S
10
8
3
00
250
0.74
200
150
100
6
0.7
3
0.72
0.71
0.7
4
2
0
50
0
0.69
4
5
I
D
(A)
2
3
1
10
0
0
5
15
Q
g
(nC)
Figure 10.
Capacitance variations
Figure 11.
Output capacitance stored energy
AM07921v1
AM07922v1
C
(pF)
E
(
μ
J)
1000
100
10
Ci
ss
2
Co
ss
1
0
Cr
ss
1
0
500
V
D
S
(V)
200
3
00
100
400
100
1
10
V
D
S
(V)
0
Figure 12.
Normalized gate threshold voltage
Figure 13.
Normalized on resistance vs
vs temperature
temperature
AM0792
3
v1
AM07924v1
V
G
S
(th)
R
D
S
(on)
(norm)
(norm)
2.1
I
D
= 250
µ
A
I
D
= 2.5 A
1.7
1.00
0.90
1.
3
0.
8
0
0.9
0.5
0.70
-50
-50
-25
-25
0
25 50 75
T
J
(°C)
0
25 50 75
T
J
(°C)
100
100
Doc ID 17413 Rev 6
7/19
Electrical characteristics
STD8NM50N, STP8NM50N, STU8NM50N
Figure 14.
Normalized V
DS
vs temperature
AM0902
8
v1
V
D
S
(norm)
I
D
=1mA
1.10
1.0
8
1.06
1.04
1.02
1.00
0.9
8
0.96
0.94
0.92
-50
-25
0
25 50
75
T
J
(°C)
100
8/19
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
Test circuits
3
Test circuits
Figure 15.
Switching times test circuit for
resistive load
Figure 16.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 17.
Test circuit for inductive load
switching and diode recovery times
Figure 18.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 19.
Unclamped inductive waveform
Figure 20.
Switching time waveform
t
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
td
on
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID 17413 Rev 6
9/19
Package mechanical data
STD8NM50N, STP8NM50N, STU8NM50N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
is an ST trademark.
Table 9.
Dim.
D
P
A
K (TO-252) mechanical data
mm
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0°
1
0.20
V2
8°
10/19
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
Figure 21.
D
P
A
K (TO-252) drawing
Package mechanical data
006
8
772_I
Figure 22.
D
P
A
K footprint
(a)
6.7
3
1.
8
1.6
2.
3
2.
3
6.7
1.6
AM0
88
50v1
a. All
dimension are in millimeters
Doc ID 17413 Rev 6
11/19
Package mechanical data
STD8NM50N, STP8NM50N, STU8NM50N
T
a
ble 10.
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
12/19
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
Figure 23.
TO-220 type A drawing
Package mechanical data
00159
88
_typeA_Rev_
S
Doc ID 17413 Rev 6
13/19
Package mechanical data
STD8NM50N, STP8NM50N, STU8NM50N
Table 11.
IPAK (TO-251) mechanical data
mm.
DIM
min.
typ.
max.
A
A1
b
2.20
0.90
0.64
2.40
1.10
0.90
0.95
5.40
b2
b4
B5
c
5.20
0.30
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
1.20
1.00
L1
L2
V1
0.80
10°
14/19
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
Figure 24.
I
P
A
K (TO-251) drawing
Package mechanical data
006
8
771_J
Doc ID 17413 Rev 6
15/19
Packaging mechanical data
STD8NM50N, STP8NM50N, STU8NM50N
5
Packaging mechanical data
Table 12.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qt
y
.
Bulk qt
y
.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
16/19
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
Figure 25.
Tape for D
P
A
K (TO-252)
Packaging mechanical data
10 pitche
s
c
u
m
u
l
a
tive
toler
a
nce on t
a
pe +/- 0.2 mm
P0
D
Top cover
t
a
pe
P2
T
E
F
W
K0
B1
B0
For m
a
chine ref. only
incl
u
ding dr
a
ft
a
nd
A0
D1
P1
r
a
dii concentric
a
ro
u
nd B0
U
s
er direction of feed
R
Bending r
a
di
us
U
s
er direction of feed
AM0
88
52v1
Figure 26.
Reel for DPAK (TO-252)
T
REEL DIMEN
S
ION
S
40mm min.
Acce
ss
hole
At
s
lot loc
a
tion
B
D
C
N
A
G me
asu
red
T
a
pe
s
lot
In core for
F
u
ll r
a
di
us
At h
ub
T
a
pe
s
t
a
rt
AM0
88
51v1
Doc ID 17413 Rev 6
17/19
Revision history
STD8NM50N, STP8NM50N, STU8NM50N
6
Revision history
T
a
ble 13.
Document revision history
Date
Revision
Changes
20-Apr-2010
1
First release.
Document status promoted from preliminary data to datasheet.
03-Sep-2010
03-Feb-2011
21-Oct-2011
2
3
4
Corrected R
DS(on)
max value in
: Features
.
Modified:
note
1
.
Updated V
DSS
(@Tjmax) in cover page.
Minor text changes.
The part number STF8NM50N has been moved to a separate
datasheet.
15-Nov-2011
13-Sep-2012
5
6
Section 4: Package mechanical data
has been updated.
18/19
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
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Australia – Belgium – Brazil – Canada – China – Czech Republic – Finland – France – Germany – Hong Kong – India – Israel – Italy – Japan –
Malaysia – Malta – Morocco – Philippines – Singapore – Spain – Sweden – Switzerland – United Kingdom – United States of America
Doc ID 17413 Rev 6
19/19
