STMicroelectronics-STW12N120K5
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STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
N-channel 1200 V, 0.62
Ω typ.,12 A MDmesh
K5 Power MOSFETs
in H²PAK-2, TO-220, TO-247 and TO-247 long leads
Datasheet – production data
Features
Order codes
STH12N120K5-2
STP12N120K5
STW12N120K5
STWA12N120K5
V
DS
R
DS(on)
max. I
D
P
TOT
2
TO-2
2
0
H
P
A
K-2
1200 V
0.69 Ω
12 A
250 W
Worldwide best FOM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
3
3
2
2
1
1
TO-247
TO-247 long leads
Figure 1: Internal schematic diagram
Applications
D(TAB)
D(2, TAB)
Switching applications
Description
These very high voltage N-channel Power
MOSFETs are desig
ned using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
G(1)
G(1)
S(2, 3)
S(3)
(
H
2
P
A
K-2)
( TO-220
,
T
O-247 and
TO-247 long leads)
Table 1: Device summary
Order code
Marking
Package
H
2
PAK-2
Packing
STH12N120K5-2
STP12N120K5
STW12N120K5
STWA12N120K5
Tape and reel
TO-220
12N120K5
TO-247
Tube
TO-247 long leads
April 2015
DocID022133 Rev 4
1/21
This is information on a product in full production.
Contents
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Contents
2/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Parameter
Gate-source voltage
Symbol
Value
± 30
12
Unit
V
V
GS
I
D
Drain current at T
C
= 25 °C
Drain current at T
C
= 100 °C
Drain current (pulsed)
A
I
D
7.6
A
I
DM
48
A
P
TOT
Total dissipation at T
C
= 25 °C
250
W
Max current during repetitive or single
pulse avalanche
4
A
Single pulse avalanche energy
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
215
4.5
50
mJ
V/ns
V/ns
T
j
Operating junction temperature
Storage temperature
– 55 to 150
°C
T
stg
Notes:
(1)
Pulse width limited by safe operating area.
(2)
Pulse width limited by T
Jmax.
(3)
Starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V
(4)
I
≤ 12 A, di/dt ≤ 100 A/µs, V
Peak
≤
V
(BR)DSS
SD
(5)
V
≤ 960 V
DS
Table 3: Thermal data
Value
Symbol
Parameter
Unit
TO-247
H
2
PAK-2 TO-220
TO-247 long leads
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-amb max
R
thj-pcb
Thermal resistance junction-pcb max
0.5
°C/W
°C/W
°C/W
62.5
50
30
DocID022133 Rev 4
3/21
Electrical characteristics
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4: On/off states
Symbol
Parameter
Test conditions
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 1200 V
Min. Typ.
Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
1200
V
1
µA
µA
Zero gate voltage drain
current
I
DSS
V
GS
= 0, V
DS
= 1200 V,
Tc = 125 °C
50
I
GSS
Gate body leakage current
V
DS
= 0 V, V
GS
= ± 20 V
±10
5
µA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
3
4
Static drain-source on-
resistance
R
DS(on)
V
GS
= 10 V, I
D
= 6 A
0.62
0.69
Ω
Table 5: Dynamic
Test conditions
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Min. Typ.
Max. Unit
–
–
1370
110
–
–
pF
pF
V
GS
= 0 V, V
DS
= 100 V,
f = 1 MHz
C
oss
Reverse transfer
capacitance
C
rss
–
–
–
0.6
128
42
–
–
–
pF
pF
pF
Equivalent capacitance,
time-related
C
o(tr)
V
GS
= 0, V
DS
= 0 to 960 V
f = 1 MHz, I
D
= 0 A
Equivalent capacitance,
energy-related
C
o(er)
R
G
Q
g
Intrinsic gate resistance
Total gate charge
–
–
–
3
–
–
–
Ω
V
DD
= 960 V, I
D
= 12 A
V
GS
= 10 V
44.2
7.3
nC
nC
Q
gs
Gate-source charge
Q
gd
Gate-drain charge
–
30
–
nC
Notes:
(1)
Time-related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when
V
DS
increases from 0 to 80% V
DSS
(2)
Energy-related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when
V
DS
increases from 0 to 80% V
DSS
4/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Electrical characteristics
Min. Typ. Max. Unit
Table 6: Switching times
Test conditions
Symbol
Parameter
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
23
11
–
–
–
–
ns
ns
ns
ns
V
DD
= 600 V, I
D
= 6 A,
R
G
= 4.7 Ω, V
GS
= 10 V
Turn-off delay time
Fall time
68.5
18.5
Table 7: Source drain diode
Test conditions
Symbol
Parameter
Min. Typ.
Max.
Unit
I
SD
Source-drain current
–
12
A
Source-drain current
(pulsed)
I
SDM
–
–
48
A
V
Forward on voltage
I
SD
= 12 A, V
GS
= 0 V
1.5
Reverse recovery
time
t
rr
Q
rr
I
RRM
t
rr
–
–
–
–
–
–
630
12.6
40
ns
I
SD
= 12 A, V
DD
= 60 V
di/dt = 100 A/µs,
Reverse recovery
charge
µC
A
Reverse recovery
current
Reverse recovery
time
I
SD
= 12 A,V
DD
= 60 V
di/dt = 100 A/µs,
Tj = 150 °C
892
15.6
35
ns
µC
A
Reverse recovery
charge
Q
rr
I
RRM
Reverse recovery
current
Notes:
(1)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 8: Gate-source Zener diode
Symbol
Parameter
Gate-source
Test conditions
Min
Typ.
Max.
Unit
V
(BR)GSO
I
GS
= ±1 mA, I
D
= 0 A
30
–
V
breakdown voltage
The built-in back-to-back Zener diodes have been specifically designed to enhance the
ESD capability of the device. The Zener voltage is appropriate for efficient and cost-
effective intervention to protect the device integrity. These integrated Zener diodes thus
eliminate the need for external components.
DocID022133 Rev 4
5/21
Electrical characteristics
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
2.1
Electrical characteristics (curves)
Figure 3: Thermal impedance for H
2
PAK-2 and
TO-220
Figure 2: Safe operating area for H
2
PAK-2 and
TO-220
GIPD300320150945
M
T
I
D
(A)
K
δ=0.5
10
1
10µs
100µs
1ms
0.2
0.1
10
-1
10ms
0.05
0.02
Z
= K*R
thj-c
th
δ= t
/
Ƭ
p
0.1
0.01
Tj=150°C
T
c
=25°C
Single pulse
t
p
Ƭ
Single pulse
10
-2
10
-5
0.01
t
P
(s)
0.1
1
1000
10
-4
10
-3
10
-2
10
-1
V
DS
(V)
10
100
Figure 5: Thermal impedance for TO-247 and
TO-247 long leads
Figure 4: Safe operating area for TO-247 and
TO-247 long leads
GIPD300320151033
M
T
GC18460
I
D
K
(A)
δ=0.5
10µs
0.2
0.1
10
100µs
-1
10
0.05
0.02
1ms
1
10ms
0.01
-2
10
10
Z
= K*R
thj-c
th
δ= t
/
Ƭ
Single pulse
p
0.1
Tj=150°C
T
c
=25°C
Single pulse
t
p
Ƭ
-3
0.01
-5
-4
-3
-2
-1
t
(s)
p
10
10
10
10
10
V
DS
(V)
0.1
1
1000
10
100
Figure 6: Output characteristics
Figure 7: Transfer characteristics
GIPD300320151056
M
T
GIPD300320151057
M
T
I
D
I
D
(A)
20
(A)
V
G
S
=9, 10V
V
DS
=20V
8V
20
15
15
7V
10
5
10
5
6V
0
0
6
10
15
V
DS
(V)
0
5
9
V
G
S
(V)
5
7
8
6/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Electrical characteristics
Figure 9: Static drain-source on-resistance
Figure 8: Gate charge vs gate-source voltage
GIPD300320151223
M
T
GIPD300320151058
M
T
R
DS(on)
V
GS
(V)
V
DS
(
Ω
)
(V)
V
G
S
=10V
V
DD
=960V
I
D
=1
2
A
10
1000
800
0.78
0.74
V
DS
8
6
4
0.7
0.66
0.62
600
400
200
2
0
0.58
0.54
0
10
15
20
5
I
D
(A)
0
30
0
10
20
40
Q
g
(nC)
Figure 10: Capacitance variations
Figure 11: Output capacitance stored energy
GIPD300320151226
M
T
C
(pF)
GIPD300320151232
M
T
E
oss
(µJ)
24
10000
Cies
20
16
1000
100
10
Coes
Cres
12
8
1
4
0.1
0
0.1
100
1
10
V
DS
(V)
400
800 1000
V
DS
(V)
0
200
600
Figure 12: Normalized gate threshold voltage vs
temperature
Figure 13: Normalized on-resistance vs temperature
GIPD300320151244
M
T
R
DS(on)
(norm)
GIPD300320151241
M
T
V
GS(th)
(norm)
I
D
=100µ A
V
G
S
=10V
2.5
2
1.2
1
1.5
1
0.8
0.6
0.4
0.5
0
-75
T
J
(°C)
-25
25
75
125
-75
T
J
(°C)
-25
25
75
125
DocID022133 Rev 4
7/21
Electrical characteristics
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Figure 15: Source-drain diode forward
Figure 14: Normalized V
(BR)DSS
vs temperature
characteristics
GIPD300320151249
M
T
V
(BR)DSS
GIPD300320151251
M
T
(norm)
(V)
0.9
V
SD
T
J
=-50°C
I
D
=1
m
A
1.08
1
T
J
=25°C
0.8
0.7
T
J
=150°C
0.92
0.84
0.6
0.5
-75
-25
125
T
J
(°C)
75
25
2
4
6
8
I
SD
(A)
10
Figure 16: Maximum avalanche energy vs starting T
J
GIPD300320151255
M
T
E
AS
(mJ)
I
D
=12 A
200
150
100
V
DD
=50 V
50
0
T
J
(°C)
-25
25
75
125
-75
8/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Test circuits
3
Test circuits
Figure 17: Switching times test circuit for resistive
load
Figure 18: Gate charge test circuit
V
DD
12 V
47
k
Ω
1 k
Ω
100 nF
I
G
= CONST
V
i
≤
V
GS
100 Ω
D.U.
T
.
V
G
2.7
k
Ω
2200 μ
F
47
k
Ω
1 k
Ω
P
W
AM01469v1
Figure 19: Test circuit for inductive load switching
and diode recovery times
Figure 20: Unclamped inductive load test circuit
A
A
A
B
D
S
FAST
DIODE
L=100 µH
G
D.U.
T
.
B
3.3
µF
1000
µF
B
V
DD
25
Ω
D
G
D.U.
T
.
R
G
S
AM01470v1
Figure 21: Unclamped inductive waveform
Figure 22: Switching time waveform
t
t
V
off
on
(
B
R
)
D
SS
t
t
t
t
f
d(on)
r
d(off)
V
D
90%
90%
I
DM
10%
V
10%
DS
I
0
D
V
V
DD
DD
90%
V
GS
AM01473v1
AM01472v1
10%
0
DocID022133 Rev 4
9/21
Package information
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
4.1
H²PAK-2 package information
Figure 23: H²PAK-2 package outline
8159712_D
DocID022133 Rev 4
11/21
Package information
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Table 9: H²PAK-2 mechanical data
mm
Dim.
Min.
4.30
0.03
1.17
4.98
0.50
0.78
10.00
7.40
15.30
1.27
4.93
6.85
1.5
Typ.
Max.
4.80
0.20
1.37
5.18
0.90
0.85
10.40
7.80
15.80
1.40
5.23
7.25
1.7
A
A1
C
e
E
F
H
H1
L
–
L1
L2
L3
L4
M
R
2.6
2.9
0.20
0°
0.60
8°
V
12/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
Figure 24: H²PAK-2 recommended footprint
8159712_D
DocID022133 Rev 4
13/21
Package information
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
4.2
TO-220 type A package information
Figure 25: TO-220 type A package outline
14/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
Table 10: TO-220 type A mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.70
0.70
15.75
A
b
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
DocID022133 Rev 4
15/21
Package information
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
4.3
TO-247 package information
Figure 26: TO-247 package outline
16/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
Table 11: TO-247 mechanical data
mm.
Dim.
Min.
4.85
2.20
1.0
Typ.
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
A
A1
b
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
ØP
ØR
S
3.55
4.50
5.30
3.65
5.50
5.70
DocID022133 Rev 4
17/21
Package information
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
4.4
TO-247 long leads package information
Figure 27: TO-247 long leads package outline
18/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
Table 12: TO-247 long leads mechanical data
mm.
Dim.
Min.
4.90
2.31
1.90
1.16
Typ.
5.00
2.41
2.00
Max.
5.10
2.51
2.10
1.26
3.25
2.25
0.66
21.10
15.90
5.10
2.60
5.54
20.10
4.30
3.70
6.00
6.25
A
A1
A2
b
b2
b3
c
0.59
20.90
15.70
4.90
D
21.00
15.80
5.00
E
E2
E3
e
2.40
2.50
5.34
5.44
L
19.80
19.92
L1
P
3.50
5.60
6.05
3.60
6.15
Q
S
DocID022133 Rev 4
19/21
Revision history
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
5
Revision history
Table 13: Document revision history
Date
Revision
Changes
23-Aug-2011
1
First release.
Minor text changes
Added: H
2
PAK package
The part number STB12N120K5 has been moved to a
separate datasheet
17-Jan-2013
2
Updated:
Updated: mechanical data for TO-247 package
The part numbers STFW12N120K5 has been moved to
a separate datasheet
Added: TO-247 long leads package
16-May-2014
3
4
Minor text changes
Updated title, silhouette and description in cover page.
08-Apr-2015
Minor text change.
20/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5, STW12N120K5,
STWA12N120K5
IMPORTANT NOTICE
–
PLEASE READ CAREFULLY
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DocID022133 Rev 4
21/21
