STMicroelectronics-STW15N95K5
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STF15N95K5, STP15N95K5,
STW15N95K5
N-channel 950 V, 0.41
Ω
typ., 12 A SuperMESH™ 5
Power MOSFE
T
s
i
n TO-220F
P
,
T
O-220 and TO-247 packages
Datasheet
–
production data
Features
Order codes
V
DS
R
DS(on)max
I
D
P
TOT
STF15N95K5
30 W
3
2
STP15N95K5 950
V
STW15N95K5
0.5
Ω
12 A
1
170 W
TO-220FP
TAB
•
TO-220 worldwide best R
DS(on)
•
Worldwide best FOM (figure of merit)
•
Ultra low gate charge
3
3
2
1
2
•
100% avalanche tested
•
Zener-protected
1
TO-220
TO-247
Figure 1. Internal schematic diagram
Applications
D(2,TAB)
•
Switching applications
Description
These devices are N-channel Power MOSFE
T
s
developed using SuperMESH™ 5 technology.
This revolutionary, avalanche-rugged, high
voltage Power MOSFET technology is based on
an innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
Marking
Package
Packaging
STF15N95K5
STP15N95K5
STW15N95K5
15N95K5
15N95K5
15N95K5
TO-220FP
TO-220
Tube
TO-247
February 2014
DocID025280 Rev 2
1/18
This is information on a product in full production.
18
Contents
STF15N95K5, STP15N95K5, STW15N95K5
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
DocID025280 Rev 2
STF15N95K5, STP15N95K5, STW15N95K5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
TO-247
TO-220FP
V
GS
I
D
Gate- source voltage
± 30
V
A
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
12
7.6
48
12
(1)
7.6
(1)
48
(1)
30
I
D
A
(2)
I
DM
A
P
TOT
I
AR
T
o
tal dissipation at T
C
= 25 °C
170
W
Max current during repetitive or single
pulse avalanche
4
A
(pulse width limited by T
jmax
)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V)
E
AS
124
2
mJ
kV
Gate-source human body model
(R= 1,5 k
Ω
, C = 100 pF)
ESD
Insulation withstand voltage (RMS) from
all three leads to external heat sink
V
ISO
2500
V
(t=1 s;T
C
=25 °C)
dv/dt
(3)
dv/dt
(4)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
4.5
50
V/ns
V/ns
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 150
°C
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3.
4.
I
≤
12, di/dt
≤
100 A/
μ
s, V
≤
760 V
≤
V
DS(peak) (BR)DSS
SD
V
DS
Table 3. Thermal data
Value
Symbol
Parameter
Unit
TO-220 TO-247 TO-220FP
R
thj-case
R
thj-amb
Thermal resistance junction-case max
Thermal resistance junction-amb max
0.74
4.2
°C/W
°C/W
62.5
50
62.5
DocID025280 Rev 2
3/18
Electrical characteristics
STF15N95K5, STP15N95K5, STW15N95K5
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
V
DS
= 950 V,
950
V
1
μ
A
μ
A
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= 950 V, Tc=125 °C
50
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
= ± 20 V
±10
5
μ
A
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100
μ
A
V
GS
= 10
V
, I
D
= 6 A
3
4
Static drain-source
R
DS(on)
0.41 0.50
Ω
on-resistance
Table 5. Dynamic
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
C
iss
Input capacitance
–
–
855
65
–
pF
pF
C
oss
Output capacitance
V
DS
=100
V
,
f
=1 MHz, V
GS
=0
Reverse transfer
capacitance
C
rss
–
–
–
1
pF
pF
pF
Equivalent capacitance time
related
(1)
C
o(tr)
104
38
–
–
V
GS
= 0, V
DS
= 0 to 760 V
f = 1 MHz open drain
Equivalent capacitance
energy related
(2)
C
o(er)
R
G
Q
g
Intrinsic gate resistance
T
o
tal gate charge
–
–
–
–
6
30
5
–
–
–
–
Ω
nC
nC
nC
V
DD
= 760 V, I
D
= 12 A
V
GS
=10 V
Q
gs
Q
gd
Gate-source charge
Gate-drain charge
22
1. Time
related is defined as a constant equivalent capacitance giving the same charging time as C
when
oss
V
increases from 0 to 80% V
DSS
DS
2. energy
related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
increases from 0 to 80% V
DS
DSS
4/18
DocID025280 Rev 2
STF15N95K5, STP15N95K5, STW15N95K5
Electrical characteristics
Min. Typ. Max. Unit
Table 6. Switching times
Test conditions
Symbol
Parameter
Voltage delay time
t
d(v)
t
r(v)
–
–
–
–
23
20
62
11
–
–
–
–
ns
ns
ns
ns
V
DD
= 475 V, I
D
= 6 A,
R
G
=4.7
Ω
, V
GS
=10 V
Voltage rise time
Current fall time
Crossing time
t
f(i)
t
c(off)
Table 7. Source drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min. Typ. Max. Unit
I
SD
I
SDM
12
48
A
A
–
Source-drain current (pulsed)
(1)
V
SD
Forward on voltage
I
SD
= 12 A, V
GS
=0
–
–
–
–
–
–
–
1.5
V
ns
μ
C
A
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
444
7
I
SD
= 12 A, V
DD
= 60 V
di/dt = 100 A/
μ
s,
I
RRM
t
rr
32
I
SD
= 12 A,V
DD
= 60 V
630
9.2
29
ns
μ
C
A
di/dt=100 A/
μ
s,
Tj=150 °C
(see
Q
rr
I
RRM
1. Pulsed:
pulse duration = 300
μ
s, duty cycle 1.5%
Table 8. Gate-source Zener diode
Parameter Test
conditions
Symbol
Min. Typ. Max. Unit
30
V
(BR)GSO
Gate-source breakdown voltage
I
GS
= ± 1 mA, I
D
= 0
–
–
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
DocID025280 Rev 2
5/18
Electrical characteristics
STF15N95K5, STP15N95K5, STW15N95K5
Figure 3. Thermal impedance for TO-220FP
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP
AM18027v1
I
D
(A)
10
10
µ
s
100
µ
s
1ms
1
10ms
0.1
Tj=150°C
T
c
=25°C
Single pulse
0.01
V
DS
(V)
0.1
1
10
100
Figure 4. Safe operating area for TO-220
Figure 5. Thermal impedance for TO-220
AM18028v1
I
D
(A)
10
10
µ
s
100
µ
s
1ms
1
10ms
Tj=150°C
T
c
=25°C
Single pulse
0.1
0.1
V
DS
(V)
1
10
100
Figure 6. Safe operating area for TO-247
Figure 7. Thermal impedance for TO-247
AM18029v1
I
D
(A)
10
10
µ
s
100
µ
s
1ms
1
10ms
Tj=150°C
T
c
=25°C
Single pulse
0.1
0.1
V
DS
(V)
1
10
100
6/18
DocID025280 Rev 2
STF15N95K5, STP15N95K5, STW15N95K5
Figure 8. Output characteristics
Electrical characteristics
Figure 9. Transfer characteristics
AM18030v1
AM18031v1
I
D
(A)
I
D
(A)
25
V
GS
=10, 11V
V
DS
=20V
25
9V
8V
20
15
10
20
15
10
5
7V
6V
5
0
0
5
0
5
10
20
15
V
DS
(V)
9
10
V
GS
(V)
7
8
6
Figure 10. Gate charge vs gate-source voltage
Figure 11. Static drain-source on-resistance
AM18032v1
AM18033v1
V
DS
(V)
V
(V)
GS
R
DS(on)
(
Ω
)
V
GS
=10V
0.8
V
DD
=760 V
800
12
I
D
=12 A
V
DS
0.7
700
10
8
600
500
400
0.6
0.5
0.4
0.3
6
300
200
4
0.2
0.1
0
2
0
100
0
Q
g
(nC)
I
D
(A)
0
2
8
5
10 15
25
4
6
10
30
20
Figure 12. Capacitance variations
Figure 13. Output capacitance stored energy
AM18034v1
AM18035v1
C
E
oss
(pF)
(
µ
J)
14
1000
Ciss
12
10
8
100
10
Coss
Crss
6
4
1
2
0
0.1
0.1
100
1
10
V
DS
(V)
0
V
DS
(V)
200
400
600
800
DocID025280 Rev 2
7/18
Electrical characteristics
STF15N95K5, STP15N95K5, STW15N95K5
Figure 14. Normalized gate threshold voltage vs
temperature
Figure 15. Normalized on-resistance vs
temperature
AM18036v1
AM18037v1
V
GS(th)
(norm)
R
DS(on)
(norm)
I
D
=100
µ
A
1.2
I
V
D
=6A
2.5
GS
=10V
1
2
1.5
1
0.8
0.6
0.4
0.5
0
0.2
0
-100
-100
-50
0
50
100 150
T
J
(°C)
T
J
(°C)
0
100
Figure 16. Normalized V
DS
vs temperature
Figure 17. Source-drain diode forward
characteristics
AM18038v1
AM18039v1
V
DS
S
D
(V)
1
V
(norm)
I
D
=1mA
1.1
1.05
T
J
=-50°C
0.9
0.8
0.7
T
J
=25°C
1
0.95
T
J
=150°C
0.6
0.5
0.9
0.85
-100
-50
0
50
100
T
J
(°C)
2
4
6
8
I
SD
(A)
10
Figure 18. Maximum avalanche energy vs
starting T
J
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8/18
DocID025280 Rev 2
STF15N95K5, STP15N95K5, STW15N95K5
Test circuits
3
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
t
on
t
off
td
off
V
(BR)DSS
t
r
t
f
td
on
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DocID025280 Rev 2
9/18
Package mechanical data
STF15N95K5, STP15N95K5, STW15N95K5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/18
DocID025280 Rev 2
STF15N95K5, STP15N95K5, STW15N95K5
Package mechanical data
Figure 25. TO-220FP drawing
7012510_Rev_K_B
DocID025280 Rev 2
11/18
Package mechanical data
STF15N95K5, STP15N95K5, STW15N95K5
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
12/18
DocID025280 Rev 2
STF15N95K5, STP15N95K5, STW15N95K5
Package mechanical data
Figure 26. TO-220 type A drawing
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DocID025280 Rev 2
13/18
Package mechanical data
STF15N95K5, STP15N95K5, STW15N95K5
Table 10. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
3.50
3.93
16.40
28.90
∅
Q
P
3.75
2.65
3.85
2.95
14/18
DocID025280 Rev 2
STF15N95K5, STP15N95K5, STW15N95K5
Package mechanical data
Figure 27. TO-247 drawing
0075325_G
Table 11. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
b1
b2
c
2.0
3.0
0.40
19.85
15.45
D
E
DocID025280 Rev 2
15/18
Package mechanical data
STF15N95K5, STP15N95K5, STW15N95K5
Table 11. TO-247 mechanical data (continued)
mm.
Dim.
Min.
Typ.
Max.
e
L
5.30
14.20
3.70
5.45
5.60
14.80
4.30
L1
L2
∅
P
∅
R
S
18.50
5.50
3.55
4.50
5.30
3.65
5.50
5.70
16/18
DocID025280 Rev 2
STF15N95K5, STP15N95K5, STW15N95K5
Revision history
5
Revision history
Table 12. Document revision history
Date
Revision
Changes
20-Sep-2013
1
First release.
07-Feb-2014
2
– Minor text changes
DocID025280 Rev 2
17/18
STF15N95K5, STP15N95K5, STW15N95K5
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