STMicroelectronics-STW21N150K5
| Part # | STMicroelectronics-STW21N150K5 |
Download  | STMicroelectronics-STW21N150K5 |
STW21N150K5
N-
channel 1500 V, 0.7 Ω typ.,14 A MDmesh™ K5
Power MOSFET in a TO-247 package
Datasheet – production data
Features
Order code
V
DS
R
DS(on)
max.
I
D
P
TOT
STW21N150K5
1500 V
0.9 Ω
14 A
446 W
Industry’s lowest R
DS(on) *
area
Industry’s best figure of merit (FoM)
Ultra low gate charge
100% avalanche tested
Zener-protected
3
2
1
TO-247
Applications
Switching applications
Figure 1: Internal schematic diagram
Description
This very high voltage N-channel Power
MOSFET is designed usin
g MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1: Device summary
Order code
Marking
Package
Packing
STW21N150K5
21N150K5
TO-247
Tube
October 2015
DocID026818 Rev 3
1/12
This is information on a product in full production.
Contents
STW21N150K5
Contents
2/12
DocID026818 Rev 3
STW21N150K5
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
V
GS
I
D
Gate-source voltage
± 30
14
Drain current at T
C
= 25 °C
Drain current at T
C
= 100 °C
Drain current (pulsed)
A
I
D
8.7
56
A
A
P
TOT
T
j
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature
Storage temperature
446
4.5
50
W
V/ns
V/ns
– 55 to 150
°C
T
stg
Notes:
(1)
Pulse width limited by safe operating area
(2)
I
≤ 14 A, di/dt ≤ 100 A/µs, V
Peak
≤ V
(BR)DSS
≤ 1200 V
SD
(3)
V
DS
Table 3: Thermal data
Symbol
R
thj-case
R
thj-amb
Parameter
Thermal resistance junction-case
Thermal resistance junction-amb
Value
0.28
50
Unit
°C/W
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
Value
5
Unit
A
Max current during repetitive or single pulse
avalanche
Single pulse avalanche energy
1100
mJ
Notes:
(1)
Pulse width limited by T
Jmax
(2)
Starting T
J
= 25 °C, I
D
= I
AS
, V
DD
= 50 V
DocID026818 Rev 3
3/12
Electrical characteristics
STW21N150K5
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 1500 V
Min.
Typ.
Max.
Unit
V
Drain-source breakdown
voltage
V
(BR)DSS
1500
1
µA
µA
Zero gate voltage drain
current
I
DSS
V
GS
= 0 V, V
DS
= 1500 V,
Tc = 125 °C
50
I
GSS
Gate body leakage current
V
DS
= 0, V
GS
= ± 20 V
±10
5
µA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
3
4
Static drain-source on-
resistance
R
DS(on)
V
GS
= 10 V, I
D
= 7 A
0.7
0.9
Ω
Table 6: Dynamic
Test conditions
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Min. Typ. Max. Unit
–
–
3145
172
–
–
pF
pF
C
oss
V
GS
= 0 V, V
DS
= 100 V,
f = 1 MHz
Reverse transfer
capacitance
C
rss
–
–
–
1
–
–
–
pF
pF
pF
Equivalent capacitance
time related
161
65
V
DS
= 0 V to 1200 V, V
GS
= 0 V
f = 1 MHz, I
D
= 0 A
Equivalent capacitance
energy related
R
G
Q
g
Intrinsic gate resistance
Total gate charge
–
–
–
2.4
89
16
–
–
–
Ω
V
DD
= 1200 V, I
D
= 7 A
V
GS
= 10 V
nC
nC
Q
gs
Gate-source charge
Q
gd
Gate-drain charge
–
59
–
nC
Notes:
(1)
Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
(2)
Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when
VDS increases from 0 to 80% VDSS
Table 7: Switching times
Symbol
Parameter
Turn-on delay time
Rise time
Test conditions
Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
34
14
–
–
–
–
ns
ns
ns
ns
V
DD
= 750 V, I
D
= 3.5 A,
R
G
= 4.7 Ω V
GS
= 10 V
Turn-off delay time
Fall time
134
26
4/12
DocID026818 Rev 3
STW21N150K5
Symbol
Electrical characteristics
Min. Typ. Max. Unit
Table 8: Source drain diode
Test conditions
Parameter
I
SD
Source-drain current
–
–
7
A
A
Source-drain current
(pulsed)
I
SDM
28
1.5
t
rr
Forward on voltage
I
SD
= 7 A, V
GS
= 0 V
–
–
–
V
Reverse recovery time
Reverse recovery charge
I
SD
= 7 A, V
DD
= 60 V
di/dt = 100 A/µs,
448
ns
µC
Q
rr
8.24
I
RRM
Reverse recovery current
–
36.8
A
t
rr
Reverse recovery time
I
SD
= 7 A,V
DD
= 60 V
di/dt = 100 A/µs,
Tj = 150 °C
–
–
564
ns
Q
rr
Reverse recovery charge
9.48
µC
I
RRM
Reverse recovery current
–
33.6
A
Notes:
(1)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
30
Gate-source breakdown
voltage
V
(BR)GSO
I
GS
= ±1 mA, I
D
= 0 A
–
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID026818 Rev 3
5/12
Electrical characteristics
STW21N150K5
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
6/12
DocID026818 Rev 3
STW21N150K5
Electrical characteristics
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 8: Capacitance variations
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 12: Maximum avalanche energy vs
temperature
Figure 13: Source-drain diode forward
characteristics
DocID026818 Rev 3
7/12
Test circuits
STW21N150K5
3
Test circuits
Figure 15: Test circuit for gate charge
Figure 14: Test circuit for resistive load
switching times
behavior
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test
circuit
Figure 19: Switching time waveform
Figure 18: Unclamped inductive waveform
8/12
DocID026818 Rev 3
STW21N150K5
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
4.1
TO-247 package information
Figure 20: TO-247 package outline
DocID026818 Rev 3
9/12
Package information
STW21N150K5
Table 10: TO-247 package mechanical data
mm.
Dim.
Min.
4.85
2.20
1.0
Typ.
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
A
A1
b
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
ØP
ØR
S
3.55
4.50
5.30
3.65
5.50
5.70
10/12
DocID026818 Rev 3
STW21N150K5
Revision history
5
Revision history
Table 11: Document revision history
Changes
Date
Revision
26-Aug-2015
1
First release.
Text and formatting changes throughout document.
Updated features on cover page.
10-Sep-2015
01-Oct-2015
2
3
Updated sections
Electrical ratings
and
Electrical characteristics
.
Added section
Electrical characteristics (curves)
.
Updated section
TO-247 package information
.
On cover page:
– updated figure Internal schematic diagram
In section Electrical characteristics:
– updated and renamed table Static (was On/off states).
DocID026818 Rev 3
11/12
STW21N150K5
IMPORTANT NOTICE
–
PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make chan
ges, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST
products before placing orders. ST products are sold pursuant
to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the
design of Purchasers’ p
roducts.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics
–
All rights reserved
12/12
DocID026818 Rev 3
