STMicroelectronics-STW21N90K5
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STB21N90K5, STF21N90K5, STP21N90K5,
STW21N90K5
N-channel 900
V
,
0
.25
Ω
typ., 18.5 A Zener-protected SuperMESH™ 5
Power MOSFET in a D
2
P
A
K, TO-220F
P
,
T
O-220 and TO-247 packages
Datasheet — production data
Features
TAB
Order codes
V
DSS
R
DS(on)
max
I
D
P
W
3
3
1
2
STB21N90K5
STF21N90K5
250 W
40 W
1
2
D
P
A
K
TO-220FP
900 V
< 0.299
Ω
18.5 A
TAB
STP21N90K5
STW21N90K5
250 W
■
TO-220 worldwide best R
DS(on)
■
Worldwide best FOM (figure of merit)
■
Ultra low gate charge
3
2
3
1
2
1
TO-220
TO-247
■
100% avalanche tested
■
Zener-protected
Figure 1.
Internal schematic diagram
D(2, TAB)
Applications
■
Switching applications
Description
G(1)
These devices are N-channel Power MOSFETs
developed using SuperMESH™ 5 technology.
This revolutionary, avalanche-rugged, high
voltage Power MOSFET technology is based on
an innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficienc
y
.
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB21N90K5
STF21N90K5
STP21N90K5
STW21N90K5
D
2
P
A
K
TO-220FP
TO-220
T
a
pe and reel
21N90K5
T
u
be
TO-247
October 2012
Doc ID 16744 Rev 6
1/22
This is information on a product in full production.
22
Contents
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
D
2
P
A
K,
TO-220FP
TO-220, TO-247
V
GS
I
D
Gate- source voltage
3
0
V
A
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
18.5
11.6
74
18.5
(1)
11.6
(1)
74
(1)
40
I
D
A
(2)
I
DM
A
P
TOT
I
AR
T
o
tal dissipation at T
C
= 25 °C
250
W
Max current during repetitive or single
pulse avalanche
(pulse width limited by T
jmax
6
A
mJ
V
)
Single pulse avalanche energy
E
AS
200
(starting T
J
= 25 °C, I
D
=I
AR
, V
DD
= 50 V)
Insulation withstand voltage (RMS) from
all three leads to external heat sink
V
iso
2500
(t=1 s;T
C
=25 °C)
dv/dt
(
3
)
Peak diode recovery voltage slope
6
V/ns
°C
T
j
Operating junction temperature
Storage temperature
-55 to 150
T
stg
1. Limited
by package.
2. Pulse
width limited by safe operating area.
3
.
I
≤
18.5 A, di/dt
≤
100 A/µs, V
≤
V
SD
DS(peak) (BR)DSS
T
a
ble 3.
Symbol
Thermal data
Parameter
Value
Unit
D²
P
A
K TO-220FP TO-220 TO-247
Rthj-case Thermal
resistance junction-case max
Rthj-amb Thermal
resistance junction-amb max
Rthj-pcb Thermal
resistance junction-pcb max
0.5
3
.1
3
0.5
62.5
50
°C/W
3
0
Doc ID 16744 Rev 6
3
/22
Electrical characteristics
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified).
T
a
ble 4.
Symbol
On/off states
Parameter
Test conditions
I
D
= 1 mA
Min. Typ. Max. Unit
Drain-source breakdown
voltage (V
GS
= 0)
V
(BR)DSS
900
V
V
DS
= 900 V
1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= 900
V
,
T
c=125 °C
50
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
=
20 V
10
µA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
V
GS
= 10
V
,
I
D
= 9 A
3
4
5
Static drain-source on
resistance
R
DS(on)
0.25 0.299
Ω
T
a
ble 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
C
iss
Input capacitance
Output capacitance
1645
112
pF
pF
C
oss
V
DS
=100
V
,
f
=1 MHz, V
GS
=0
–
–
–
–
Reverse transfer
capacitance
C
rss
2
pF
pF
Equivalent capacitance time
related
(1)
C
o(tr)
1
33
V
GS
= 0, V
DS
= 0 to 720 V
Equivalent capacitance
energy related
(2)
C
o(er)
–
–
16
4
–
–
pF
R
G
Intrinsic gate resistance
f = 1MHz open drain
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 720
V
,
I
D
= 18.5 A
4
3
12
25
nC
nC
nC
V
GS
=10 V
–
–
1. Time
related is defined as a constant equivalent capacitance giving the same charging time as C
when
oss
V
increases from 0 to 80% V
DSS
DS
2. Energy
related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
increases from 0 to 80% V
DS
DSS
4/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Electrical characteristics
Min. Typ. Max. Unit
T
a
ble 6.
Symbol
Switching times
Parameter
Test conditions
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
17
27
52
40
ns
ns
ns
ns
V
DD
= 720
V
,
I
D
= 10 A,
R
G
=4.7
Ω
, V
GS
=10 V
–
–
T
u
rn-off delay time
Fall time
T
a
ble 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I
SD
Source-drain current
19
76
A
A
–
–
I
SDM
Source-drain current (pulsed)
(1)
V
SD
Forward on voltage
I
SD
= 18.5 A, V
GS
=0
1.5
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 18.5 A, V
DD
= 60 V
di/dt = 100 A/µs,
548
12
ns
μ
C
A
Q
rr
–
–
I
RRM
46
I
SD
= 18.5 A,V
DD
= 60 V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
660
15
ns
μ
C
A
di/dt=100 A/µs,
Tj=150 °C
Q
rr
I
RRM
45
1. Pulsed:
pulse duration =
3
00µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
3
0
V
(BR)GSO
Gate-source breakdown voltage
I
GS
= 1
mA, I
D
= 0
–
–
V
The built-in-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capabilit
y
, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrit
y
.
T
hese integrated Zener diodes thus avoid the usage of external components.
Doc ID 16744 Rev 6
5/22
Electrical characteristics
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 /
D
2
P
A
K
Figure 3.
Thermal impedance for TO-220 /
D
2
PAK
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Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
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Safe operating area for TO-247
Figure 7.
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6/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
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Figure 10.
Gate charge vs gate-source voltage
Figure 11.
Static drain-source on resistance
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Figure 12.
Capacitance variations
Figure 13.
Output capacitance stored energy
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Doc ID 16744 Rev 6
7/22
Electrical characteristics
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on-resistance vs
vs temperature
temperature
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Figure 16.
Source-drain diode forward
characteristics
Figure 17.
Normalized B
VDSS
vs temperature
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Figure 18.
Maximum avalanche energy vs
starting Tj
AM11194v1
E
A
S
(mJ)
I
D
=6 A
V
DD
=50 V
200
1
8
0
160
140
120
100
8
0
60
40
20
0
0
20
40
60
8
0 100
120
14
0
T
J
(°C)
8/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Test circuits
3
Test circuits
Figure 19.
Switching times test circuit for
resistive load
Figure 20.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3.3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 21.
Test circuit for inductive load
switching and diode recovery times
Figure 22.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
D.U.
T
.
B
3.3
μ
F
V
DD
μ
F
S
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 23.
Unclamped inductive waveform
Figure 24.
Switching time waveform
t
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
td
on
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM01473v1
Doc ID 16744 Rev 6
9/22
Package mechanical data
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
ECO
P
A
CK
®
is an ST trademark.
10/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Package mechanical data
T
a
ble 9.
Dim.
D²
P
A
K (TO-263) mechanical data
Min.
mm
Typ.
Max.
A
A1
b
4.40
0.0
3
0.70
1.14
0.45
1.2
3
8.95
7.50
10
4.60
0.2
3
0.9
3
1.70
0.60
1.
3
6
9.
3
5
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.
3
0
L1
L2
R
0.4
V2
0°
8°
Doc ID 16744 Rev 6
11/22
Package mechanical data
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Figure 25.
D²
P
A
K (TO-263) drawing
0079457_T
Figure 26.
D²
P
A
K footprint
(a)
16.90
12.20
5.0
8
1.60
3.50
9.75
Footprint
a. All
dimensions are in millimeters
12/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
T
a
ble 10.
TO-220FP mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L
3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
3
0.6
10.6
3
.6
16.4
9.
3
3
3
.2
Doc ID 16744 Rev 6
1
3
/22
Package mechanical data
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Figure 27.
TO-220FP drawing
7012510_Rev_K_B
14/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
T
a
ble 11.
TO-220 type A mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
e
2.40
4.95
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.9
3
16.40
28.90
3
.75
3
.85
2.65
2.95
Doc ID 16744 Rev 6
15/22
Package mechanical data
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Figure 28.
TO-220 type A drawing
00159
88
_typeA_Rev_
S
16/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Table 12.
TO-247 mechanical data
Package mechanical data
mm.
Typ.
Dim.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3
.40
0.80
20.15
15.75
5.60
14.80
4.
3
0
b1
b2
c
2.0
3
.0
0.40
19.85
15.45
5.
3
0
14.20
3
.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3
.55
4.50
5.
3
0
3
.65
5.50
5.70
Doc ID 16744 Rev 6
17/22
Package mechanical data
Figure 29.
TO-247 drawing
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
0075325_G
18/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Packaging mechanical data
5
Packaging mechanical data
Table 13.
D²
P
A
K (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
33
0
1.5
12.8
20.2
24.4
100
1
3
.2
26.4
3
0.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3
.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
2
3
.7
0.
3
5
24.
3
W
Doc ID 16744 Rev 6
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Packaging mechanical data
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Figure 30.
Tape for D²
P
A
K (TO-263) and D
P
A
K (TO-252)
10 pitche
s
c
u
m
u
l
a
tive
toler
a
nce on t
a
pe +/- 0.2 mm
P0
D
P2
Top cover
t
a
pe
T
E
F
W
K0
B0
A0
D1
P1
U
s
er direction of feed
R
Bending r
a
di
us
U
s
er direction of feed
AM0
88
52v2
Figure 31.
Reel for D²
P
A
K (TO-263) and D
P
A
K (TO-252)
T
REEL DIMEN
S
ION
S
40mm min.
Acce
ss
hole
At
s
l ot
loc
a
tion
B
D
C
N
A
G me
asu
red
a
t h
ub
F
u
ll r
a
di
us
T
a
pe
s
lot
in core for
t
a
pe
s
t
a
rt 25 mm min.
width
AM0
88
51v2
20/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Revision history
6
Revision history
T
a
ble 14.
Document revision history
Date
Revision
Changes
05-Nov-2009
18-Nov-2009
12-Jan-2010
14-Jul-2010
1
2
3
4
First release.
Updated description on cover page
Document status promoted from preliminary data to datasheet.
– Inserted device in D
2
P
A
K.
21-Dec-2011
12-Oct-2012
5
6
– Minor text changes.
Doc ID 16744 Rev 6
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STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
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Doc ID 16744 Rev 6
