STMicroelectronics-STW30NM50N
| Part # | STMicroelectronics-STW30NM50N |
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STB30NM50N,STI30NM50N,STF30NM50N
STP30NM50N, STW30NM50N
N-channel 500
V
,
0
.090
Ω
, 27 A MDmesh™ II Power MOSFET
D
2
P
A
K, I
2
P
A
K, TO-220F
P
,
T
O-220, TO-247
Features
R
DS(on)
max
V
DSS
(@Tjmax)
Type
I
D
3
3
1
2
1
STB30NM50N
STI30NM50N
STF30NM50N
STP30NM50N
STW30NM50N
550 V
550 V
550 V
550 V
550 V
< 0.115
Ω
< 0.115
Ω
< 0.115
Ω
27 A
(1)
27 A
27 A
D²PAK
I²PAK
3
2
1
TO-247
< 0.115
Ω
< 0.115
Ω
27 A
27 A
3
3
1. Limited
only by maximum temperature allowed
2
2
1
1
■
100% avalanche tested
TO-220FP
TO-220
■
Low input capacitance and gate charge
■
Low gate input resistance
Figure 1.
Internal schematic diagram
Application
■
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™
T
e
chnolog
y
.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB30NM50N
STI30NM50N
STF30NM50N
STP30NM50N
STW30NM50N
30NM50N
30NM50N
30NM50N
30NM50N
30NM50N
D²
P
A
K
I²
P
A
K
T
a
pe and reel
T
u
be
TO-220FP
TO-220
TO-247
T
u
be
T
u
be
T
u
be
September 2008
Rev 2
1/18
18
Contents
STB/I/F/P/W30NM50N
Contents
1
2
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
STB/I/F/P/W30NM50N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
D²PAK/I²PAK
Unit
TO-220FP
TO-220/TO-247
V
DS
V
GS
I
D
Drain-source voltage (V
GS
=0)
500
V
V
Gate-source voltage
25
27
(1)
A
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
27
17
17
(1)
A
I
D
(2)
108
(1)
A
Drain current (pulsed)
108
190
15
I
DM
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
40
W
dv/dt
(3)
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
V
ISO
—
2500
V
(t=1 s;T
C
=25 °C)
T
stg
T
j
Storage temperature
-55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited
only by maximum temperature allowed
2. Pulse
width limited by safe operating area
3. I
SD
≤
27 A, di/dt
≤
400 A/µs, V
DD
= 80% V
(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
I²PAK TO-220 D²PAK TO-220FP TO-247 Unit
Thermal resistance junction-
case max
R
thj-case
R
thj-pcb
R
thj-amb
T
l
0.66
—
3.1
—
0.66 °C/W
Thermal resistance junction-
pcb max
—
30
—
—
°C/W
°C/W
°C
Thermal resistance junction-
amb max
62.5
62.5
50
Maximum lead temperature for
soldering purposes
300
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
I
AR
12
A
Single pulse avalanche energy
E
AS
900
mJ
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
3/18
Electrical characteristics
STB/I/F/P/W30NM50N
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5.
Symbol
On /off states
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
DS
= Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V
(BR)DSS
500
V
Zero gate voltage
V
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= Max rating, T
C
=125 °C
100
Gate-body leakage
I
GSS
V
GS
=
20 V
100
4
nA
V
current (V
DS
= 0)
V
GS(th)
R
DS(on
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on
2
3
V
GS
= 10
V
,
I
D
= 13.5 A
0.090 0.115
Ω
resistance
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Forward
transconductance
(1)
g
fs
V
DS
= 15
V
,
I
D
= 13.5 A
23
S
Input capacitance
C
iss
C
oss
C
rss
2740
160
15
pF
pF
pF
Output capacitance
V
DS
= 50
V
, f = 1
M
Hz, V
GS
= 0
f=1MHz Gate DC Bias=0
Reverse transfer
capacitance
R
g
Gate input resistance
T
e
st signal level=20 mV
open drain
2.7
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400
V
,
I
D
= 27 A,
V
GS
= 10 V
94
15
50
nC
nC
nC
(see Figure 19)
1. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%
4/18
STB/I/F/P/W30NM50N
Electrical characteristics
Min. Typ.
Max Unit
Table 7.
Symbol
Switching times
Parameter
Test conditions
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
23
20
ns
ns
ns
ns
V
DD
= 250
V
,
I
D
= 13.5 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(see Figure 18)
T
u
rn-off-delay time
Fall time
115
60
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max
Unit
I
SD
Source-drain current
27
A
A
(1)
I
SDM
Source-drain current (pulsed)
108
(2)
V
SD
Forward on voltage
I
SD
= 27 A, V
GS
= 0
1.5
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 27 A, di/dt = 100 A/µs
V
DD
= 100 V Tj = 25°C
(see Figure 20)
480
8
ns
µC
A
Q
rr
I
RRM
33
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 27 A, di/dt = 100 A/µs
V
DD
= 100 V Tj = 150°C
(see Figure 20)
540
10
ns
µC
A
Q
rr
I
RRM
35
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300µs, duty cycle 1.5%
5/18
Electrical characteristics
STB/I/F/P/W30NM50N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 /
D²PAK / I²PAK
Figure 3.
Thermal impedance for TO-220 /
D²PAK / I²PAK
!-ꢀꢀꢈꢉꢊVꢂ
GC20540
)
$
ꢃ!ꢄ
K
4Jꢅꢂꢆꢀ #
4Cꢅꢇꢆ #
δ
=0.5
3INGLE PULSE
ꢂꢀꢀ
ꢂꢀ
/PERATING IN THIS AREA IS
,IMITED BY MAX 2
$3ꢃONꢄ
0.2
0.1
10
-1
ꢂꢀS
ꢂꢀꢀS
ꢂMS
0.05
Zth=k Rthj-c
δ
=tp/
τ
0.02
ꢂꢀMS
0.01
ꢂ
S
ingle p
u
l
s
e
t
p
τ
10
-2
10
-5
ꢀꢁꢂ
ꢀꢁꢂ
10
-2
p
(
s
)
10
-4
10
–
3
10
-1
t
ꢂ
ꢂꢀꢀ
6
$3
ꢃ6ꢄ
ꢂꢀ
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
GC20521
!-ꢀꢀꢈꢉꢈVꢂ
)
$
ꢃ!ꢄ
K
4Jꢅꢂꢆꢀ #
4Cꢅꢇꢆ #
δ
=0.5
3INGLE PULSE
0.2
ꢂꢀꢀ
ꢂꢀ
0.1
-1
10
ꢂꢀS
ꢂꢀꢀS
0.05
0.02
Zth=k Rthj-c
δ
=t /
τ
0.01
S
ingle p
u
l
s
e
ꢂMS
p
-2
ꢂꢀMS
10
ꢂ
t
p
τ
–
3
10
10
ꢀꢁꢂ
ꢀꢁꢂ
-1
10
0
-4
–
3
-2
p
(
s
)
t
10
10
10
ꢂ
ꢂꢀꢀ
6
$3
ꢃ6ꢄ
ꢂꢀ
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
!-ꢀꢀꢈꢋꢀVꢂ
GC1
8
460
)
$
ꢃ!ꢄ
K
δ
=0.5
4Jꢅꢂꢆꢀ #
4Cꢅꢇꢆ #
3INGLE PULSE
0.2
0.1
ꢂꢀꢀ
ꢂꢀ
10
-1
10
-2
10
–
3
0.05
0.02
ꢂꢀS
ꢂꢀꢀS
0.01
S
ingle p
u
l
s
e
Zth=k Rthj-c
δ
=tp/
τ
ꢂMS
ꢂꢀMS
ꢂ
t
p
τ
ꢀꢁꢂ
ꢀꢁꢂ
10
-2
10
-5
10
-4
10
–
3
10
-1
p
(
s
)
t
ꢂ
ꢂꢀꢀ
6
$3
ꢃ6ꢄ
ꢂꢀ
6/18
STB/I/F/P/W30NM50N
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM00941v1
!-ꢀꢀꢈꢋꢇVꢂ
I
D
)
$
(A)
ꢃ!ꢄ
V
G
S
=10V
ꢉꢆ
3
5
ꢉꢀ
3
0
ꢇꢆ
ꢇꢀ
ꢂꢆ
25
20
5V
15
10
5
ꢂꢀ
ꢆ
4V
0
ꢀ
ꢀ
0
10
ꢇ
ꢋ
ꢌ
V
D
S
(V)
ꢂꢀ 6
‘3
ꢃ6ꢄ
20
ꢊ
3
0
Figure 10.
Transconductance
Figure 11.
Static drain-source on resistance
!-ꢀꢀꢈꢋꢉVꢂ
AM00944v1
)
$
R
D
S
(on)
ꢃ!ꢄ
(
Ω
)
4
*
ꢅꢍꢆꢀ #
ꢉꢀꢁꢆ
0.094
ꢇꢆꢁꢆ
0.092
0.090
4
*
ꢅꢇꢆ #
ꢇꢀꢁꢆ
4
*
ꢅꢂꢆꢀ #
ꢂꢆꢁꢆ
0.0
88
0.0
8
6
ꢂꢀꢁꢆ
ꢆꢁꢆ
ꢀꢁꢆ
ꢀ
0.0
8
4
ꢆ
ꢂꢀ
ꢂꢆ
0
5
10
15
ꢇꢆ )
$
ꢃ!ꢄ
25 I
D
(A)
ꢉꢀ
3
0
Figure 12.
Gate charge vs gate-source voltage
Figure 13.
Capacitance variations
AM00945v1
!-ꢀꢀꢈꢋꢌVꢂ
#ꢃP&ꢄ
V
G
S
(V)
V
DD
=400V
=27A
I
D
12
ꢂꢀꢀꢀꢀ
ꢂꢀꢀꢀ
#ISS
10
8
6
#OSS
#RSS
ꢂꢀꢀ
4
ꢂꢀ
ꢂ
2
0
0
20
40
60
ꢂ
ꢂꢀ
ꢂꢀꢀ
8
0
100
Q
g
(nC)
ꢀꢁꢂ
6
$3
ꢃ6ꢄ
7/18
Electrical characteristics
STB/I/F/P/W30NM50N
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on resistance vs
vs temperature
temperature
!-ꢀꢀꢈꢋꢎVꢂ
!-ꢀꢀꢈꢋꢊVꢂ
6
‘3ꢃTHꢄ
2
$3ꢃONꢄ
ꢃNORM
ꢄ
ꢃNORM
ꢄ
ꢂꢁꢂ
ꢂꢁꢀ
ꢇꢁꢀ
ꢂꢁꢆ
ꢂꢁꢀ
ꢀꢁꢆ
ꢀꢁꢈ
ꢀꢁꢊ
ꢀꢁꢎ
ꢀ
ꢆꢀ
ꢂꢀꢀ
ꢆꢀ
ꢂꢀꢀ
4
*
ꢃ #ꢄ
ꢀ
4
*
ꢃ #ꢄ
ꢍꢆꢀ
ꢍꢆꢀ
Figure 16.
Source-drain diode forward
characteristics
Figure 17.
Normalized B
vs temperature
VDSS
!-ꢀꢀꢈꢋꢈVꢂ
!-ꢀꢀꢈꢆꢀVꢂ
6
3$
ꢃ6ꢄ
6
3$
ꢃ6ꢄ
4
*
ꢅꢆꢀ #
ꢂꢁꢀ
ꢇꢆ #
ꢀꢁꢈ
ꢂꢁꢀꢉ
ꢀꢁꢈꢊ
ꢀꢁꢈꢉ
ꢂꢆꢀ #
ꢀꢁꢊ
ꢀꢁꢎ
ꢀꢁꢌ
ꢀꢁꢆ
ꢀꢁꢋ
ꢇꢀ
ꢉꢀ
ꢆꢀ
ꢂꢀꢀ
ꢀ
ꢂꢀ
ꢋꢀ
ꢆꢀ )
3$
ꢃ!ꢄ
ꢍꢆꢀ
ꢀ
4
*
ꢃ #ꢄ
8/18
STB/I/F/P/W30NM50N
Test circuits
3
Test circuits
Figure 18.
Switching times test circuit for
resistive load
Figure 19.
Gate charge test circuit
Figure 20.
Test circuit for inductive load
switching and diode recovery times
Figure 21.
Unclamped inductive load test
circuit
Figure 22.
Unclamped inductive waveform
Figure 23.
Switching time waveform
9/18
Package mechanical data
STB/I/F/P/W30NM50N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
10/18
STB/I/F/P/W30NM50N
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.4
9
15.25
4.60
0.
88
1.70
0.70
15.75
0.17
3
0.024
0.044
0.01
9
0.6
0.1
8
1
0.0
3
4
0.066
0.027
0.62
b
1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
0.
393
0.0
9
4
0.1
9
4
0.04
8
0.244
0.0
9
4
0.511
0.1
3
7
0.40
9
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.
9
5
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.
93
16.40
0.645
2
8
.
9
0
1.1
3
7
3
.75
3
.
8
5
2.
9
5
0.147
0.104
0.151
0.116
2.65
11/18
Package mechanical data
STB/I/F/P/W30NM50N
TO-220FP mechanical data
mm.
inch
Dim.
Min.
4.40
2.5
Typ
Max.
4.60
2.7
Min.
Typ.
Max.
0.1
8
1
0.106
0.10
8
0.027
0.0
39
0.067
0.067
0.204
0.106
0.40
9
A
B
0.17
3
0.0
98
0.0
98
0.017
0.0
3
0
0.045
0.045
0.1
9
5
0.0
9
4
0.
393
D
2.5
2.75
0.70
1.00
1.50
1.50
5.20
2.70
10.40
E
0.45
0.75
1.15
1.15
4.
9
5
2.40
10
F
F1
F2
G
G1
H
L2
L
3
L4
L5
L6
L7
Di
a
16
0.6
3
0
2
8
.6
9
.
8
0
2.
9
3
0.6
10.60
3
.6
1.126
0.
38
5
0.114
0.626
0.
3
54
0.11
8
1.204
0.417
0.141
0.645
0.
3
66
0.126
15.
9
0
9
16.40
9
.
3
0
3
.2
3
L3
L6
L7
Di
a
1
2 3
L5
L2
L4
7012510-I
12/18
STB/I/F/P/W30NM50N
Package mechanical data
TO-247 mechanical data
mm.
Typ
D
i
m.
Min.
Max .
A
A1
b
4.85
5.15
2.20
1.0
2.60
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
E
e
5.45
18.50
5.50
L
14.20
3.70
14.80
4.30
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
13/18
Package mechanical data
STB/I/F/P/W30NM50N
TO-262 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
A1
b
4.40
2.40
0.61
1.14
0.4
9
1.2
3
8
.
9
5
2.40
4.
9
5
10
4.60
2.72
0.
88
1.70
0.70
1.
3
2
9
.
3
5
2.70
5.15
10.40
14
0.17
3
0.0
9
4
0.024
0.044
0.01
9
0.04
8
0.
3
52
0.0
9
4
0.1
9
4
0.
393
0.511
0.1
3
7
0.050
0.1
8
1
0.107
0.0
3
4
0.066
0.027
0.052
0.
3
6
8
0.106
0.202
0.410
0.551
0.154
0.055
b
1
c
c2
D
e
e1
E
L
1
3
L1
L2
3
.50
1.27
3
.
93
1.40
14/18
STB/I/F/P/W30NM50N
Package mechanical data
D²
P
A
K (TO-263) mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
A1
b
4.40
0.0
3
0.70
1.14
0.45
1.2
3
8
.
9
5
7.50
10
4.60
0.2
3
0.
93
1.70
0.60
1.
3
6
9
.
3
5
0.17
3
0.001
0.027
0.045
0.017
0.04
8
0.
3
52
0.2
9
5
0.
39
4
0.
33
4
0.1
8
1
0.00
9
0.0
3
7
0.067
0.024
0.05
3
0.
3
6
8
b
2
c
c2
D
D1
E
10.40
0.40
9
E1
e
8
.50
2.54
0.1
e1
H
4.
88
15
5.2
8
15.
8
5
2.6
9
2.7
9
1.40
1.75
0.1
9
2
0.5
9
0
0.0
99
0.0
9
0
0.05
0.20
8
0.624
0.106
0.110
0.055
0.06
9
J1
L
2.4
9
2.2
9
1.27
1.
3
0
L1
L2
R
0.051
0.4
0.016
V2
0°
8
°
0°
8
°
0079457_M
15/18
Packaging mechanical data
STB/I/F/P/W30NM50N
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504
0.520
0795
26.4 0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7
0.413 0.421
15.7 15.9
0.618 0.626
A0
B0
D
1.5
1.6 0.059
0.063
D1
E
1.59 1.61
0.062 0.063
1.65 1.85
0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449
0.456
5.0 0.189
0.197
4.1 0.153
0.161
12.1 0.468
0.476
2.1 0.075
0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35
0.0098 0.0137
23.7 24.3
0.933 0.956
W
* on sales type
16/18
STB/I/F/P/W30NM50N
Revision history
6
Revision history
Table 9.
Date
Document revision history
Revision
Changes
19-Feb-2008
23-Sep-2008
1
2
First release
Document status promoted from preliminary data to datasheet.
17/18
STB/I/F/P/W30NM50N
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