STMicroelectronics-STW38N65M5-4
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STW38N65M5-4
N-
channel 650 V, 0.073 Ω typ., 30 A MDmesh M5
Power MOSFET in a TO247-4 package
Datasheet – preliminary data
Features
Order code
V
DS
@ T
Jmax
R
DS(on)
max
710 V
0.095 Ω
I
D
STW38N65M5-4
30 A
•
•
•
•
Extremely low R
DS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Applications
•
High efficiency switching applications:
−
−
−
−
Servers
PV inverters
Telecom infrastructure
Multi kW battery chargers
Figure 1: Internal schematic diagram
Drain(1)
Description
This device is an N-channel Power MOSFET
based on the MDmesh™ M5 innovative vertical
process technology combined with the well-
known PowerMESH™ horizontal layout. The
resulting product offers extremely low on-
resistance, making it particularly suitable for
applications requiring high power and superior
efficiency.
Gate(4)
Driver
source(3)
Power
source(2)
ND1PS2DS3G4
Table 1: Device summary
Marking
Order code
Package
Packaging
STW38N65M5-4
38N65M5
TO247-4
Tube
April 2016
DocID029243 Rev 1
1/13
This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
Contents
STW38N65M5-4
Contents
2/13
DocID029243 Rev 1
STW38N65M5-4
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
±25
30
Unit
V
V
GS
I
D
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
A
I
D
19
A
120
190
15
A
P
TOT
T
stg
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
W
V/ns
V/ns
50
Storage temperature range
– 55 to 150
°C
T
j
Operating junction temperature range
Notes:
(1)
Pulse width limited by safe operating area
(2)
I
≤ 30 A, di/dt = 400 A/µs, V
DS(peak)
< V
(BR)DSS
, V
DD
= 400 V
SD
(3)
V
≤ 520 V
DS
Table 3: Thermal data
Parameter
Symbol
R
thj-case
R
thj-amb
Value
0.66
50
Unit
°C/W
°C/W
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited
by T
jmax
Symbol
Value
Unit
I
AR
8
°C/W
)
Single pulse avalanche energy (starting T
J
= 25 °C, I
D
= I
AR
V
DD
= 50 V)
,
E
AS
660
mJ
DocID029243 Rev 1
3/13
Electrical characteristics
STW38N65M5-4
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5: On /off states
Test conditions
Symbol
Parameter
Min. Typ.
650
Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
V
V
DS
= 650 V
1
µA
µA
Zero gate voltage
drain current
I
DSS
V
GS
= 0, V
DS
= 650 V,
100
Gate-body leakage
current
I
GSS
V
DS
= 0, V
GS
= ± 25 V
V
DS
= V
GS
, I
D
= 250 µA
±100
5
nA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
3
4
Static drain-source
on- resistance
V
GS
= 10 V, I
D
= 15 A
0.073 0.095
Ω
Notes:
(1)
Defined by design, not subject to production test
Table 6: Dynamic
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Test conditions
Min. Typ. Max. Unit
–
–
3000
74
–
–
pF
pF
V
DS
= 100 V, f = 1 MHz,
C
oss
V
GS
= 0
Reverse transfer
capacitance
C
rss
–
–
–
5.8
244
70
–
–
–
pF
pf
Equivalent capacitance
time related
V
GS
= 0, V
DS
= 0 to 520 V
Equivalent capacitance
energy related
pf
R
G
Q
g
Intrinsic gate resistance
Total gate charge
f = 1 MHz, I
D
=0 A
–
–
–
–
2.4
71
18
30
–
–
–
–
Ω
nC
nC
nC
V
DD
= 520 V, I
D
= 15 A,
Q
gs
Q
gd
Gate-source charge
Gate-drain charge
Notes:
(1)
C
o(tr)
is a constant capacitance value that gives the same charging time as C
oss
while V
DS
is rising from 0 to
80% V
DSS
.
(2)
C
o(er)
is a constant capacitance value that gives the same stored energy as Coss while V
DS
is rising from 0 to
80% V
DSS
.
4/13
DocID029243 Rev 1
STW38N65M5-4
Symbol
Electrical characteristics
Min. Typ. Max. Unit
Table 7: Switching times
Test conditions
Parameter
Voltage delay time
Voltage rise time
Current fall time
t
d(V)
t
r(V)
t
f(i)
V
DD
= 400 V, I
D
= 20 A,
–
–
–
60
8
–
–
–
ns
ns
ns
R
G
= 4.7 Ω, V
GS
= 10 V
8
t
c(off)
Crossing time
–
11.5
–
ns
Table 8: Source drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
I
SD
Source-drain current
–
–
30
120
1.5
A
A
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 30 A, V
GS
= 0
–
–
V
t
rr
Reverse recovery time
382
6.6
ns
I
SD
= 30 A,
Reverse recovery
charge
di/dt = 100 A/µs
Q
rr
–
µC
V
DD
= 100 V
Reverse recovery
current
I
RRM
t
rr
–
–
–
35
A
Reverse recovery time
522
10.3
ns
µC
I
SD
= 30 A,
Reverse recovery
charge
di/dt = 100 A/µs
Q
rr
V
DD
= 100 V, T
j
= 150 °C
Reverse recovery
current
I
RRM
–
40
A
Notes:
(1)
Pulse width limited by safe operating area
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID029243 Rev 1
5/13
Electrical characteristics
STW38N65M5-4
2.2
Electrical characteristics (curve)
Figure 2: Safe operating area
Figure 3: Thermal impedance
AM12636v1
I
D
(A)
100
10
1
10µs
100µs
1ms
Tj=150°C
Tc=25°C
10ms
Sinlge
pulse
0.1
10
V
DS
(V)
0.1
1
100
Figure 4: Output characteristics
Figure 5: Tranfer characteristics
AM12637v1
AM12638v1
I
D
I
D
(A)
80
(A)
80
V
GS
= 10 V
V
GS
= 8 V
V
DS
= 25V
V
GS
= 7 V
60
40
20
0
60
40
20
0
V
GS
= 6 V
3
5
4
7
20
8
25
10
V
DS
(V)
5
V
GS
(V)
0
15
6
Figure 7: Static drain-source on-resistance
Figure 6: Gate charge vs gate-source voltage
AM12639v1
DS
V
(V)
GS
V
(V)
V
DD
=520V
500
I
D
=15A
V
DS
12
400
300
200
8
4
0
100
0
20
40
80
Q
g
(nC)
0
60
6/13
DocID029243 Rev 1
STW38N65M5-4
Electrical characteristics
Figure 8: Capacitance variations
C
(pF)
Figure 9: Output capacitance stored energy
AM12642v1
AM12641v1
E
oss
(µJ)
14
10000
1000
100
12
10
8
Ciss
6
Coss
Crss
4
10
2
0
1
200
400 500
600
V
DS
(V)
0.1
100
0
100
300
1
10
V
DS
(V)
Figure 10: Normalized gate threshold voltage vs
Figure 11: Normalized on-resistance vs
temperature
temperature
AM05459v1
AM05460v1
V
GS(th)
R
DS(on)
(norm)
(norm)
2.1
V
GS
= 10 V
1.10
I
D
= 250 µA
I
D
= 15 A
1.9
1.7
1.5
1.3
1.1
1.00
0.90
0.80
0.70
0.9
0.7
0.5
-50
-25
-50
-25
0
25 50 75
T
J
(°C)
0
25 50 75
T
J
(°C)
100
100
Figure 12: Source-drain diode forward
characteristics
Figure 13: Normalized V
(BR)DSS
vs temperature
AM05461v1
AM10399v1
V
SD
V
(BR)DSS
(norm)
(V)
T
J
=-50°C
1.08
1.2
I
D
= 1mA
1.06
1.04
1.02
1.00
1.0
0.8
0.6
T
J
=25°C
T
J
=150°C
0.98
0.96
0.4
0.2
0.94
0.92
0
0
-50
-25
10
20
30
40
50
I
SD
(A)
0
25 50 75
T
J
(°C)
100
DocID029243 Rev 1
7/13
Electrical characteristics
STW38N65M5-4
Figure 14: Switching energy vs gate resistance
AM18024v1
E
(µJ)
I
V
D
=20A
Eon
350
300
250
200
150
100
DD
=400V
Eoff
50
0
20
30
40
10
R
G
(
Ω
)
0
E
on
including reverse recovery of a SiC diode.
8/13
DocID029243 Rev 1
STW38N65M5-4
Test circuits
3
Test circuits
Figure 15: Switching times test circuit for resistive
load
Figure 16: Gate charge test circuit
V
DD
12V
47kΩ
100nF
1kΩ
2200
3.3
µF
R
L
µF
I
G
=CON
S
T
V
DD
+
100Ω
V
i
≤ V
GS
D.U.
T
.
V
D
2200
µF
V
GS
+
V
G
2.7kΩ
47kΩ
R
G
D.U.
T
.
P
W
GND1
(driver signal)
GND2
(power)
1kΩ
P
W
GND1
GND2
AM15855v1
AM15856v1
Figure 17:
Test circuit for inductive load
switching and diode recovery times
Figure 18:
Unclamped inductive load test circuit
A
A
A
D
S
L
FAST
DIODE
L=100µH
G
D.U.
T
.
B
V
D
2200
µF
3.3
µF
3.3
µF
1000
µF
B
B
V
DD
V
DD
+
D
S
25Ω
+
I
D
G
R
G
D.U.
T
.
V
i
D.U.
T
.
GND2
GND1
P
w
GND1
GND2
AM15857v1
AM15858v1
Figure 19: Unclamped inductive waveform
Figure 20: Switching time waveform
Concept waveform for Indu
ctive Load Turn-off
Id
90%Vds
90%Id
Tdelay -off
Vgs
90%Vgs
10%Vds
on
Vgs(I(t ))
10%Id
Vds
Trise
Tfall
Tcross -over
AM05540v2_for_M5
DocID029243 Rev 1
9/13
Package information
STW38N65M5-4
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
4.1
TO247-4 package information
Figure 21: TO247-4 package outline
10/13
DocID029243 Rev 1
STW38N65M5-4
Package information
Table 9: TO247-4 mechanical data
mm.
Dim.
Min.
4.90
2.31
1.90
1.16
1.15
0
Typ.
5.00
2.41
2.00
Max.
5.10
2.51
2.10
1.29
1.25
0.20
0.66
0.62
21.10
16.85
1.35
25.27
15.90
13.50
5.10
2.60
2.64
5.18
20.10
3.70
7.40
2.60
6.00
A
A1
A2
b
b1
b2
c
1.20
0.59
0.58
20.90
16.25
1.05
24.97
15.70
13.10
4.90
2.40
2.44
4.98
19.80
3.50
c1
D
0.60
21.00
16.55
1.20
D1
D2
D3
E
25.12
15.80
13.30
5.00
E1
E2
E3
e
2.50
2.54
e1
L
5.08
19.92
3.60
P
P1
P2
Q
2.40
5.60
2.50
6.15
S
T
9.80
6.00
10.20
6.40
U
DocID029243 Rev 1
11/13
Revision history
STW38N65M5-4
5
Revision history
Table 10: Document revision history
Revision
Date
Changes
20-Apr-2016
1
Initial release.
12/13
DocID029243 Rev 1
STW38N65M5-4
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DocID029243 Rev 1
13/13
