STMicroelectronics-STW3N150

Part #STMicroelectronics-STW3N150
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STMicroelectronics-STW3N150
STFW3N150, STH3N150-2,  
STP3N150, STW3N150  
N-channel 1500
V
,
2
.5 A, 6
Ω
typ., PowerMESH™ Power MOSFE
T
s  
in TO-3P
F
,
H

2

PAK-2, TO-220 and TO247 packages  
Datasheet production
 
data  
–
Features  
TAB  
Order codes  
V

DS  

R

DS(on)

max.  
I

D  

P

TOT  

1
2
1
3
3
STFW3N150  
STH3N150-2  
STP3N150  
63 W  
2
H

2

PAK-2  
1
1500 V  
9
Ω
 
2.5 A  
TO-3PF  
140 W  
TAB  
STW3N150  
•
•
•
•
100% avalanche tested  
3
3
2
2
1
1
Intrinsic capacitances and Qg minimized  
High speed switching  
TO-220  
TO-247  
Fully isolated TO-3PF plastic package,  
creepage distance path is 5.4 mm (typ.)  
Figure 1.
 
Internal schematic diagram  
AM15557v1  
D(2, TAB)  
D(
T
AB)  
Applications  
•
Switching applications  
Description  
G(1)  
G(1)  
These Power MOSFE
T
s
a
re designed using the  
company’s consolidated strip layout-based MESH  
OVERLAY™ process. The result is a product that  
matches or improves on the performance of  
comparable standard parts from other  
manufacturers.  
S(3)  
S(2, 3)  
(TO-3P
F
, TO-220 and TO-247)  
(H

2

PAK-2)  
Table 1. Device summary  
Order codes  
Marking  
Packages  
Packaging  
STFW3N150  
STH3N150-2  
STP3N150  
TO-3PF  
H

2

PAK-2  
TO-220  
TO-247  
Tube  
T
a
pe and reel  
3N150  
Tube  
STW3N150  
February 2014  
DocID13102 Rev 11  
1/23  
This is information on a product in full production.  
 

STFW3N150, STH3N150-2, STP3N150, STW3N150  
Electrical ratings  
1
Electrical ratings  
Table 2. Absolute maximum ratings  
Value  
H

2

PAK-2,  
Symbol  
Parameter  
Unit  
TO-3PF  
TO-220,  
TO-247  
V

DS  

V

GS  

I

D  

Drain-source voltage  
1500  
± 30  
V
V
Gate-source voltage  
Drain current (continuous) at T

C

= 25 °C  
Drain current (continuous) at T

C

= 100 °C  
Drain current (pulsed)  
2.5

(1)  

1.6

(1)  

10

(1)  

63  
2.5  
1.6  
10  
A
I

D  

A
(1)  
I

DM  

A
P

TOT  

T
o
tal dissipation at T

C

= 25 °C  
140  
W
Insulation withstand voltage (RMS) from  
all three leads to external heat sink  
(t=1 s; T

C

=25 °C)  
V

ISO  

3500  
0.5  
V
Derating factor  
1.12  
W/°C  
°C  
T

stg  

T

j  

Storage temperature  
Max. operating junction temperature  
-50 to 150  
150  
°C  
1. Pulse
 
width limited by safe operating area  
Table 3. Thermal data  
Parameter  
TO-3PF H

2

PAK-2 TO-220 TO-247
 
Unit  
Symbol  
R

thj-case

Thermal resistance junction-case max  
2
0.89  
62.5  
°C/W  
°C/W  
°C/W  
Thermal resistance junction-ambient  
R

thj-amb  

max  
50  
50  
R

thj-pcb

Thermal resistance junction-pcb max  
35

(1)  

2
1. When
 
mounted on 1 inch
 
FR-4 board, 2 oz Cu  
Table 4. Avalanche characteristics  
Parameter Max
 
value  
Symbol  
Unit  
Avalanche current, repetitive or  
not-repetitive  
I

AR  

2.5  
A
(pulse width limited by T

j

max)  
Single pulse avalanche energy  
E

AS  

450  
mJ  
(starting T

j

= 25 °C, I

D

= I

AR  

,
V

DD

= 50 V)  
DocID13102 Rev 11  
3/23  
23  
 
 

Electrical characteristics  
STFW3N150, STH3N150-2, STP3N150, STW3N150  
2
Electrical characteristics  
(
T

case

= 25 °C unless otherwise specified)  
Table 5. On /off states  
Test conditions  
Symbol  
Parameter  
Drain-source  
Min.  
Typ.  
Max. Unit  
V

(BR)DSS  

I

D

= 1 mA, V

GS

= 0  
1500  
V
breakdown voltage  
V
V

DS

= 1500 V  
10  
μ
A  
μ
A  
Zero gate voltage  
drain current (V

GS

= 0)  
I

DSS  

DS

= 1500
V
, T

C

=125 °C  
500  
Gate-body leakage  
current (V

DS

= 0)  
I

GSS  

V

GS

= ± 30 V  
± 100
 
nA  
V

GS(th)  

R

DS(on  

Gate threshold voltage
 
V

DS

= V

GS

, I

D

= 250
μ
A  
3
4
6
5
9
V
Static drain-source on-  
V

GS

= 10
V
,
I

D

= 1.3 A  
resistance  
Ω
Table 6. Dynamic  
Symbol  
Parameter  
Forward  
Test conditions  
Min.  
Typ.  
Max. Unit  
(1)  
g

fs  

V

DS

= 30
V
,
I

D

= 1.3 A  
–
2.6  
–
S
transconductance  
Input capacitance  
Output capacitance  
–
–
–
–
–
–
–
–
pF  
pF  
pF  
pF  
C

iss  

939  
V

DS

= 25
V
, f = 1 MHz, V

GS

= 0  
C

oss  

C

rss  

102  
Reverse transfer  
capacitance  
–
–
13.2  
–
–
pF  
pF  
Equivalent output  
capacitance  
(2)  
C

oss eq.  

V

DS

=0 to 1200
V
, V

GS

= 0  
100  
4
f = 1 MHz, gate DC  
Bias = 0,  
test signal level = 20 m
V
,  
I

D

= 0  
R

g  

Gate input resistance  
–
–
Ω
Q

g  

Q

gs  

Q

gd  

T
o
tal gate charge  
Gate-source charge  
Gate-drain charge  
–
–
–
29.3  
4.6  
17  
–
–
–
nC  
nC  
nC  
V

DD

= 1200 V, I

D

= 2.5 A,  
V

GS

= 10 V  
1. Pulsed:
 
pulse duration = 300
μ
s, duty cycle 1.5%  
2. is
 
defined as a constant equivalent capacitance giving the same charging time as C  
C
when V  
DS  
oss eq.  
oss  
increases from 0 to 80% V  
DSS  
4/23  
DocID13102 Rev 11  
 

STFW3N150, STH3N150-2, STP3N150, STW3N150  
Electrical characteristics  
Min. Typ. Max.
 
Unit  
Table 7. Switching times  
Symbol  
Parameter  
Test conditions  
t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on delay time  
Rise time  
–
–
–
–
24  
47  
45  
61  
–
–
–
–
ns  
ns  
ns  
ns  
V

DD

= 750
V
, I

D

= 1.25 A,  
R

G

= 4.7
Ω,
V

GS

= 10 V  
Turn-off-delay time  
Fall time  
Table 8. Source drain diode  
Test conditions  
Symbol  
Parameter  
Min. Typ. Max. Unit  
I

SD  

Source-drain current  
–
–
–
–
–
–
–
–
–
2.5  
10  
A
A
(1)  
I

SDM  

Source-drain current (pulsed)  
Forward on voltage  
(2)  
V

SD  

I

SD

= 2.5 A, V

GS

= 0  
1.6  
V
t

rr  

Q

rr  

Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
410  
2.4  
ns  
μ
C  
A
I

SD

= 2.5 A, di/dt = 100 A/
μ
s  
V

DD

= 60 V  
I

RRM  

t

rr  

11.7  
540  
3.3  
ns  
μ
C  
A
I

SD

= 2.5 A, di/dt = 100 A/
μ
s  
Q

rr  

V

DD

= 60
V
,
T
j = 150 °C  
I

RRM  

12.3  
1. Pulse
 
width limited by safe operating area  
2. Pulsed:
 
pulse duration = 300
μ
s, duty cycle 1.5%  
DocID13102 Rev 11  
5/23  
23  

Electrical characteristics  
STFW3N150, STH3N150-2, STP3N150, STW3N150  
Figure 3. Thermal impedance for TO-3PF  
2.1  
Electrical characteristics (curves)  
Figure 2. Safe operating area for TO-3PF  
AM03934v1  
TO3PF  
I
D
(A)  
K
δ
=0.5  
0.2  
0.1  
10  
10µs  
10

-1  

1
0.1  
0.05  
100µs  
1ms  
0.02  
0.01  
10ms  
Tj=150°C  
Tc=25°C  
Single pulse  
Sinlge  
pulse  
0.01  
10

-2  

10

-5  

10

-2  

10

-4  

10

-1  

10

-3  

10  
V
DS
(V)  

p

(s)  
t
0.1  
1
100  
1000  
Figure 4. Safe operating area for H

2

PAK-2 and
 
Figure 5. Thermal impedance for H

2

PAK-2 and  
TO-220  
TO-220  
Figure 6. Safe operating area for TO-247  
Figure 7. Thermal impedance for TO-247  
6/23  
DocID13102 Rev 11  

STFW3N150, STH3N150-2, STP3N150, STW3N150  
Figure 8. Output characteristics  
Electrical characteristics  
Figure 9. Transfer characteristics  
Figure 10. Normalized BV

DSS

vs. temperature  
Figure 11. Static drain-source on-resistance  
Figure 12. Gate charge vs. gate-source voltage  
Figure 13. Capacitance variations  
DocID13102 Rev 11  
7/23  
23  

Electrical characteristics  
STFW3N150, STH3N150-2, STP3N150, STW3N150  
Figure 14. Normalized gate threshold voltage  
vs. temperature  
Figure 15. Normalized on resistance vs.  
temperature  
Figure 16. Source-drain diode forward  
characteristics  
Figure 17. Maximum avalanche energy vs Tj  
8/23  
DocID13102 Rev 11  
 

STFW3N150, STH3N150-2, STP3N150, STW3N150  
Test circuits  
3
Test circuits  
Figure 18. Switching times test circuit for  
resistive load  
Figure 19. Gate charge test circuit  
V
DD  
12V  
47k
Ω
 
1k
Ω  
100nF  
2200  
μ
F  
3.3  
μ
F  
R
L  
I
G
=CONST  
V

DD  

100
Ω  
V

i

=20V=V
GMAX  
D.U.T.  
V
D  
R
G  
V
GS  
2200  
μ
F  
D.U.T.  
V

G  

2.7k
Ω  
47k
Ω  
P
W  
1k
Ω  
P
W  
AM01468v1  
AM01469v1  
Figure 20. Test circuit for inductive load  
switching and diode recovery times  
Figure 21. Unclamped inductive load test circuit  
L
A
A
A
B
D
S
FAST  
DIODE  
L=100
μ
H  
V
D  
G
2200  
μ
F  
D.U.T.  
B
3.3  
μ
F  
V
DD  
3.3  
μ
F  
1000  
μ
F  
B
V

DD  

25  
Ω
I
D  
D
G
R

G  

S
V
i  
D.U.T.  
P
w  
AM01470v1  
AM01471v1  
Figure 22. Unclamped inductive waveform  
Figure 23. Switching time waveform  
t
on  
t
off  
td
off  
V
(BR)DSS  
t
r  
t
f  
td
on  
V
D  
90%  
10%  
90%  
I
DM  
10%  
V

GS  

V
DS  
I
D  
0
0
V
DD  
V
DD  
90%  
10%  
AM01472v1  
AM01473v1  
DocID13102 Rev 11  
9/23  
23  
 
 
 
 

Package mechanical data  
STFW3N150, STH3N150-2, STP3N150, STW3N150  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK

®  

specifications, grade definitions and product status are available at:

.  
ECOPACK

®

is an ST trademark.  
10/23  
DocID13102 Rev 11  
 

STFW3N150, STH3N150-2, STP3N150, STW3N150  
Package mechanical data  
Figure 24. TO-3PF drawing  
7627132_D  
DocID13102 Rev 11  
11/23  
23  

Package mechanical data  
STFW3N150, STH3N150-2, STP3N150, STW3N150  
Table 9. TO-3PF mechanical data  
mm  
Dim.  
Min.  
Typ.  
Max.  
A
C
5.30  
2.80  
3.10  
1.80  
0.80  
0.65  
1.80  
10.30  
5.70  
3.20  
3.50  
2.20  
1.10  
0.95  
2.20  
11.50  
D
D1  
E
F
F2  
G
G1  
H
5.45  
10  
15.30  
9.80  
15.70  
10.20  
23.20  
26.70  
44.40  
4.70  
L
L2  
L3  
L4  
L5  
L6  
L7  
N
22.80  
26.30  
43.20  
4.30  
24.30  
14.60  
1.80  
24.70  
15  
2.20  
R
3.80  
4.20  
Dia  
3.40  
3.80  
12/23  
DocID13102 Rev 11  

STFW3N150, STH3N150-2, STP3N150, STW3N150  
Package mechanical data  
Figure 25. H²PAK-2 drawing  
8159712_C  
DocID13102 Rev 11  
13/23  
23  

Package mechanical data  
STFW3N150, STH3N150-2, STP3N150, STW3N150  
Table 10. H²PAK-2 mechanical data  
mm  
Dim.  
Min.  
Typ.  
Max.  
A
A1  
C
4.30  
0.03  
1.17  
4.98  
0.50  
0.78  
10.00  
7.40  
15.30  
1.27  
4.93  
6.85  
1.5  
4.80  
0.20  
1.37  
5.18  
0.90  
0.85  
10.40  
7.80  
15.80  
1.40  
5.23  
7.25  
1.7  
e
E
F
H
H1  
L
–
L1  
L2  
L3  
L4  
M
R
2.6  
2.9  
0.20  
0°  
0.60  
8°  
V
14/23  
DocID13102 Rev 11  

STFW3N150, STH3N150-2, STP3N150, STW3N150  
Package mechanical data  
Figure 26. H²PAK-2 recommended footprint (dimensions are in mm)  
8159712_C  
DocID13102 Rev 11  
15/23  
23  

Package mechanical data  
STFW3N150, STH3N150-2, STP3N150, STW3N150  
Figure 27. TO-220 type A drawing  
ꢀꢀꢁꢂꢃꢄꢄBWSH$B5HYB7  
16/23  
DocID13102 Rev 11  
 

STFW3N150, STH3N150-2, STP3N150, STW3N150  
Package mechanical data  
Table 11. TO-220 type A mechanical data  
mm  
Dim.  
Min.  
Typ.  
Max.  
A
b
4.40  
0.61  
1.14  
0.48  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
b1  
c
D
D1  
E
1.27  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
3.50  
3.93  
16.40  
28.90  
∅
Q
P
3.75  
2.65  
3.85  
2.95  
DocID13102 Rev 11  
17/23  
23  
 

Package mechanical data  
STFW3N150, STH3N150-2, STP3N150, STW3N150  
Figure 28. TO-247 drawing  
0075325_G  
18/23  
DocID13102 Rev 11  

STFW3N150, STH3N150-2, STP3N150, STW3N150  
Package mechanical data  
Table 12. TO-247 mechanical data  
mm.  
Typ.  
Dim.  
Min.  
Max.  
A
A1  
b
4.85  
2.20  
1.0  
5.15  
2.60  
1.40  
2.40  
3.40  
0.80  
20.15  
15.75  
5.60  
14.80  
4.30  
b1  
b2  
c
2.0  
3.0  
0.40  
19.85  
15.45  
5.30  
14.20  
3.70  
D
E
e
5.45  
18.50  
5.50  
L
L1  
L2  
∅
P  
∅
R  
S
3.55  
4.50  
5.30  
3.65  
5.50  
5.70  
DocID13102 Rev 11  
19/23  
23  

Packaging mechanical data  
STFW3N150, STH3N150-2, STP3N150, STW3N150  
5
Packaging mechanical data  
Figure 29. Tape  
10 pitches cumulative  
tolerance on tape +/- 0.2 mm  
P0  
P2  
Top cover  
tape  
D
T
E
F
W
K0  
B0  
A0  
D1  
P1  
User direction of feed  
R
Bending radius  
User direction of feed  
AM08852v2  
20/23  
DocID13102 Rev 11  

STFW3N150, STH3N150-2, STP3N150, STW3N150  
Packaging mechanical data  
Figure 30. Reel  
T
REEL DIMENSIONS  
40mm min.  
Access hole  
At sl
 
ot location  
B
D
C
N
A
G measured at hub  
Full radius  
Tape slot  
in core for  
tape start 25 mm min.  
width  
AM08851v2  
Table 13. H²PAK-2 tape and reel mechanical data  
Tape Reel  
mm  
mm  
Dim.  
Dim.  
Min.  
Max.  
Min.  
Max.  
A0  
B0  
D
10.5  
15.7  
1.5  
10.7  
15.9  
1.6  
A
B
C
D
G
N
T
330  
13.2  
26.4  
30.4  
1.5  
12.8  
20.2  
24.4  
100  
D1  
E
1.59  
1.65  
11.4  
4.8  
1.61  
1.85  
11.6  
5.0  
F
K0  
P0  
P1  
P2  
R
3.9  
4.1  
11.9  
1.9  
12.1  
2.1  
Base qty  
Bulk qty  
1000  
1000  
50  
T
0.25  
23.7  
0.35  
24.3  
W
DocID13102 Rev 11  
21/23  
23  

Revision history  
STFW3N150, STH3N150-2, STP3N150, STW3N150  
6
Revision history  
Table 14. Document revision history  
Changes  
Date  
Revision  
12-Jan-2007  
17-Apr-2007  
14-May-2007  
29-Aug-2007  
09-Apr-2008  
13-Feb-2009  
1
2
3
4
5
6
First release  
Added new value on

The document has been reformatted  

DS(on)

value changed, updated

R
Added new package: TO-3PF  
Added P

TOT

value for TO-3PF (

)  
– Document status promoted from preliminary data to datasheet  
– Removed TO-220FH package and mechanical data  
01-Dec-2009  
7
10-Dec-2009  
29-Jun-2010  
8
9
Corrected unit in

– Minor text changes  
– Modified:

– Changed:

– Added: H

2

PAK-2 package  
08-Feb-2013  
10  
– Modified:

– Updated:

,

,

and

– Updated:

and

– Minor text changes  
18-Feb-2014  
11  
22/23  
DocID13102 Rev 11  

STFW3N150, STH3N150-2, STP3N150, STW3N150  
Please Read Carefully:  
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right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
time, without notice.  
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