STMicroelectronics-STW57N65M5
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STB57N65M5, STF57N65M5, STI57N65M5,
STP57N65M5
N-channel 650
V
,
0
.056
Ω
typ., 42 A MDmesh™ V Power MOSFET
in I²
P
A
K, TO-220, TO-220FP and D²
P
A
K packages
Datasheet — production data
Features
TAB
V
DSS
T
Jmax
@
R
DS(on)
max
Order codes
I
D
3
1
3
STB57N65M5
STF57N65M5
STI57N65M5
STP57N65M5
2
1
D²
P
A
K
TO-220FP
710 V
< 0.063
Ω
42 A
TAB
TAB
■
Worldwide best R
DS(on)
*area amongst the
silicon based devices
3
2
3
1
2
■
Higher V
DSS
rating, high dv/dt capability
■
Excellent switching performance
1
I²PAK
TO-220
■
Easy to drive, 100% avalanche tested
Figure 1.
Internal schematic diagram
Applications
$ꢅꢆꢇ
4
!
“ꢈ
■
Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technolog
y
, which
is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
‘ꢅꢁꢈ
3ꢅꢉꢈ
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficienc
y
.
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Order codes
Marking
Packages
Packaging
STB57N65M5
STF57N65M5
STI57N65M5
STP57N65M5
D²
P
A
K
TO-220FP
I²
P
A
K
T
a
pe and reel
T
u
be
57N65M5
T
u
be
TO-220
T
u
be
December 2012
Doc ID 022849 Rev 4
1/22
This is information on a product in full production.
22
Contents
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
2/22
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
TO-220,
D²
P
A
K, I²
P
A
K
TO-220FP
V
GS
I
D
Gate- source voltage
25
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
42
42
(1)
26.5
(1)
168
(1)
40
A
A
I
D
26.5
168
250
(2)
I
DM
A
P
TOT
I
AR
T
o
tal dissipation at T
C
= 25 °C
W
Max current during repetitive or single pulse
avalanche (pulse width limited by T
JMAX
11
A
)
Single pulse avalanche energy
E
AS
960
15
mJ
(starting T
j
= 25°C, I
D
= I
AR
, V
DD
= 50V)
dv/dt
(3)
Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
V
ISO
2500
V
(t = 1 s; T
C
= 25 °C)
T
stg
T
j
Storage temperature
-55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3.
I
≤
42 A, di/dt
≤
400 A/µs, V
< V
, V
= 400 V
SD
Peak
(BR)DSS DD
T
a
ble 3.
Symbol
Thermal data
Parameter
Value
Unit
D²
P
A
K I²PAK TO-220 TO-220FP
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
R
thj-pcb
Thermal resistance junction-pcb max
(1)
1. When
mounted on 1inch² FR-4 board, 2 oz Cu.
0.50
3.1
°C/W
°C/W
°C/W
62.5
62.5
30
Doc ID 022849 Rev 4
3/22
Electrical characteristics
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
T
a
ble 4.
Symbol
On /off states
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 650 V
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V
(BR)DSS
650
V
Zero gate voltage
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= 650
V
,
T
C
=125 °C
100
Gate-body leakage
I
GSS
V
GS
=
25 V
100 nA
current (V
DS
= 0)
V
GS(th)
R
DS(on
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-
3
4
5
V
V
GS
= 10
V
,
I
D
= 21 A
0.056 0.063
Ω
resistance
T
a
ble 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
4200
115
9
pF
V
DS
= 100
V
, f = 1
M
Hz,
GS
= 0
–
–
–
pF
pF
V
Reverse transfer
capacitance
Equivalent output
capacitance energy
related
V
GS
= 0, V
DS
= 0 to 80%
V
(BR)DSS
(1)
C
o(er)
–
93
pF
Equivalent output
capacitance time
related
V
GS
= 0, V
DS
= 0 to 80%
V
(BR)DSS
(2)
C
o(tr)
–
–
303
1.3
–
–
pF
Intrinsic gate
resistance
R
G
f = 1 MHz open drain
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 520
V
,
I
D
= 21 A,
V
GS
= 10 V
98
23
40
nC
nC
nC
–
–
1.
2.
C
is a constant capacitance value that gives the same stored energy as C
while V
is rising from 0
DS
o(er)
oss
to 80% V
DSS
C
is a constant capacitance value that gives the same charging time as C
while V
is rising from 0
DS
o(tr)
oss
to 80% V
DSS
4/22
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Electrical characteristics
Min. Typ. Max.
Unit
T
a
ble 6.
Symbol
Switching times
Parameter
Test conditions
t
d(V)
t
r(V)
t
f(i)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
73
15
12
19
ns
ns
ns
ns
V
DD
= 400
V
,
I
D
= 28 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
–
–
t
c(off)
T
a
ble 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max.
Unit
I
SD
Source-drain current
42
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
168
(2)
V
SD
Forward on voltage
I
SD
= 42 A, V
GS
= 0
1.5
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
418
8
ns
µC
A
I
SD
= 42 A, di/dt = 100 A/µs
Q
rr
–
–
I
RRM
40
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 42 A, di/dt = 100 A/µs
DD
= 100
V
,
T
j
= 150 °C
528
12
ns
µC
A
Q
rr
V
I
RRM
44
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Doc ID 022849 Rev 4
5/22
Electrical characteristics
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
for D²
P
A
K,
I²
P
A
K and TO-220
Figure 3.
Thermal impedance for D²
P
A
K,
I²
P
A
K and TO-220
AM1470
3
v1
I
D
(A)
100
10
µs
100
µs
1m
s
10
Tj=150°C
Tc=25°C
10m
s
1
S
ingle
p
u
l
s
e
0.1
10
V
D
S
(V)
0.1
1
100
Figure 4.
Safe operating area
for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
AM14704v1
I
D
(A)
100
10
10
µs
100
µs
1m
s
1
10m
s
Tj=150°C
Tc=25°C
0.1
S
ingle
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
AM14706v1
AM14707v1
I
D
(A)
I
D
(A)
V
= 9, 10 V
G
S
V
= 25 V
D
S
100
8
0
60
40
20
0
100
8
0
V
=
8
V
G
S
V
= 7 V
G
S
60
40
V
= 6 V
16
G
S
20
0
4
7
8
9
V
G
S
(V)
12
3
5
6
8
4
V
D
S
(V)
0
6/22
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage
Figure 9.
Static drain-source on-resistance
AM1470
8
v1
AM14709v1
V
G
S
(V)
R
D
S
(on)
V
D
S
(V)
(
Ω
)
V
DD
=520V
I
D
=21A
0.062
V
G
S
=10V
500
400
3
00
200
10
8
V
D
S
0.060
0.05
8
6
0.056
0.054
0.052
0.05
4
100
0
2
0
20
3
0
10
40
8
0
100
Q
g
(nC)
I
D
(A)
0
20
60
0
Figure 10.
Capacitance variations
Figure 11.
Output capacitance stored energy
AM14710v1
AM14711v1
C
E
o
ss
(pF)
(
µ
J)
1
8
16
14
10000
1000
Ci
ss
12
10
8
100
Co
ss
Cr
ss
6
4
2
10
1
0
0
0.1
100
200
400 500
600
1
10
V
D
S
(V)
100
3
00
V
D
S
(V)
Figure 12.
Normalized gate threshold voltage
Figure 13.
Normalized on-resistance vs
vs temperature
temperature
AM05459v1
AM05460v1
V
G
S
(th)
R
D
S
(on)
(norm)
(norm)
1.10
2.1
I
= 250
µ
A
D
V
= 10V
G
S
I =
21 A
1.9
1.7
1.5
1.
3
1.1
D
1.00
0.90
0.
8
0
0.9
0.7
0.5
-50
-25
0.70
-50
-25
0
25 50 75
T
J
(°C)
0
25 50 75
T
J
(°C)
100
100
Doc ID 022849 Rev 4
7/22
Electrical characteristics
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Figure 15.
Normalized B
VDSS
vs temperature
Figure 14.
Source-drain diode forward
characteristics
AM05461v1
AM10
3
99v1
V
(V)
S
D
V
D
S
(norm)
T
J
=-50°C
1.0
8
1.2
I
D
= 1mA
1.06
1.04
1.02
1.00
1.0
0.
8
0.6
T
J
=25°C
T
J
=150°C
0.9
8
0.4
0.2
0.96
0.94
0.92
0
0
-50
-25
10
20
3
0
40
50 I
S
D
(A)
0
25 50 75
T
J
(°C)
100
Figure 16.
Switching losses vs gate resistance
(1)
AM14712v1
E
(
μ
J)
Eon
V
DD
=400V
V
G
S
=10V
I
D
=2
8
A
8
00
600
Eoff
400
200
0
20
3
0
40
10
R
G
(
Ω
)
0
1. Eon
including reverse recovery of a SiC diode
8/22
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Test circuits
3
Test circuits
Figure 17.
Switching times test circuit for
resistive load
Figure 18.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 19.
Test circuit for inductive load
switching and diode recovery times
Figure 20.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 21.
Unclamped inductive waveform
Figure 22.
Switching time waveform
Concept w
a
veform for Ind
u
ctive Lo
a
d
T
u
rn-off
V
(BR)D
SS
Id
V
D
90
%
Vd
s
90
%
Id
Tdel
a
y-off
I
DM
Vg
s
90
%
Vg
s
10
%
Vd
s
on
I
D
Vg
s
(I(t))
V
DD
V
DD
10
%
Id
Vd
s
Tri
s
e
Tf
a
ll
Tcro
ss
-over
AM01472v1
AM05540v2
Doc ID 022849 Rev 4
9/22
Package mechanical data
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
is an ST trademark.
T
a
ble 8.
Dim.
D²
P
A
K (TO-263) mechanical data
mm
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
10/22
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Figure 23.
D²
P
A
K (TO-263) drawing
Package mechanical data
0079457_T
Figure 24.
D²
P
A
K footprint
(a)
16.90
12.20
5.0
8
1.60
3
.50
9.75
Footprint
a. All
dimension are in millimeters
Doc ID 022849 Rev 4
11/22
Package mechanical data
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
T
a
ble 9.
Dim.
TO-220FP mechanical data
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
12/22
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Figure 25.
TO-220FP drawing
Package mechanical data
7012510_Rev_K_B
Doc ID 022849 Rev 4
13/22
Package mechanical data
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Table 10.
I²
P
A
K (TO-262) mechanical data
DIM.
mm.
typ
min.
max.
A
A1
b
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
14/22
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Figure 26.
I²
P
A
K (TO-262) drawing
Package mechanical data
00049
8
2_Rev_H
Doc ID 022849 Rev 4
15/22
Package mechanical data
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
T
a
ble 11.
TO-220 type A mechanical data
Dim.
mm
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
16/22
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Figure 27.
TO-220 type A drawing
Package mechanical data
00159
88
_typeA_Rev_
S
Doc ID 022849 Rev 4
17/22
Packaging mechanical data
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
5
Packaging mechanical data
Table 12.
D²
P
A
K (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
18/22
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Figure 28.
Tape
Packaging mechanical data
10 pitche
s
c
u
m
u
l
a
tive
toler
a
nce on t
a
pe +/- 0.2 mm
P0
D
P2
Top cover
t
a
pe
T
E
F
W
K0
B0
A0
D1
P1
U
s
er direction of feed
R
Bending r
a
di
us
U
s
er direction of feed
AM0
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Packaging mechanical data
Figure 29.
Reel
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
T
REEL DIMEN
S
ION
S
40mm min.
Acce
ss
hole
At
s
l ot
loc
a
tion
B
D
C
N
A
G me
asu
red
a
t h
ub
T
a
pe
s
lot
F
u
ll r
a
di
us
in core for
t
a
pe
s
t
a
rt 25 mm min.
width
AM0
88
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STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Revision history
6
Revision history
T
a
ble 13.
Document revision history
Date
Revision
Changes
06-Apr-2012
1
First release.
Document status promoted from preliminary to production data.
04-Jul-2012
21-Aug-2012
04-Dec-2012
2
3
4
Minor text change on the cover page.
The part number STW57N65M5 has been moved to a separate
datasheet.
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STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
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