STMicroelectronics-STW58N60DM2AG
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STW58N60DM2AG
Automotive-grade N-
channel 600 V, 0.052 Ω typ., 50 A
MDmesh™ DM2 Power
MOSFET in a TO-247 package
Datasheet – production data
Features
R
DS(on)
Order code
V
DS
I
D
P
TOT
max.
STW58N60DM2AG 600
V
0.060 Ω
50 A
360 W
Designed for automotive applications and
AEC-Q101 qualified
3
2
Fast-recovery body diode
Extremely low gate charge and input
capacitance
1
TO-247
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Figure 1: Internal schematic diagram
D(2)
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Q
rr
)
and time (t
rr
) combined with low R
DS(on)
, rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
G(1)
S(3)
AM15572v1_no_tab
Table 1: Device summary
Order code
Marking
Package
Packing
STW58N60DM2AG
58N60DM2
TO-247
Tube
July 2015
DocID027912 Rev 2
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This is information on a product in full production.
Contents
STW58N60DM2AG
Contents
2.1
Electrical characteristics (curves)……………………………………………..
.
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STW58N60DM2AG
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
±25
50
Unit
V
GS
Gate-source voltage
V
Drain current (continuous) at T
case
= 25 °C
Drain current (continuous) at T
case
= 100 °C
Drain current (pulsed)
I
D
A
31
200
360
50
A
P
TOT
T
stg
Total dissipation at T
case
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
W
V/ns
°C
50
Storage temperature
-55 to 150
T
j
Operating junction temperature
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
I
≤ 50 A, di/dt=800 A/μs; V
DS
peak < V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
.
SD
(3)
V
≤ 480 V.
DS
Table 3: Thermal data
Parameter
Symbol
R
thj-case
R
thj-amb
Value
0.35
50
Unit
Thermal resistance junction-case
Thermal resistance junction-ambient
°C/W
Table 4: Avalanche characteristics
Parameter
Symbol
Value
12
Unit
A
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
800
mJ
Notes:
(1)
Pulse width limited by T
jmax
(2)
starting T
j
= 25 °C, I
D
= I
AS
, V
DD
= 50 V.
.
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Electrical characteristics
STW58N60DM2AG
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 600 V
Min. Typ.
600
Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
V
10
Zero gate voltage drain
current
I
DSS
µA
V
GS
= 0 V, V
DS
= 600 V,
T
case
= 125 °C
100
Gate-body leakage
current
I
GSS
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 25 A
±5
5
µA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
3
4
Static drain-source on-
resistance
0.052 0.060
Ω
Table 6: Dynamic
Test conditions
Symbol
Parameter
Input capacitance
Output
Min. Typ. Max. Unit
C
iss
–
–
4100
190
–
–
C
oss
C
rss
capacitance
V
DS
= 100 V, f = 1 MHz, V
GS
= 0 V
pF
Reverse transfer
capacitance
–
–
3.2
–
–
Equivalent output
capacitance
C
oss eq.
V
DS
= 0 to 480 V, V
GS
= 0 V
f = 1 MHz, I
D
= 0 A
325
pF
Intrinsic gate
resistance
R
G
Q
g
–
–
–
–
4.2
90
18
44
–
–
–
–
Ω
Total gate charge
V
DD
= 480 V, I
D
= 50 A, V
GS
= 10 V
Gate-source
charge
Q
gs
Q
gd
nC
Gate-drain charge
Table 7: Switching times
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Turn-on
delay time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
24
60
–
–
–
–
V
DD
= 300 V, I
D
= 25 A R
G
= 4.7
Ω (see
Rise time
ns
Turn-off
delay time
130
12
Fall time
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STW58N60DM2AG
Electrical characteristics
Min. Typ. Max. Unit
Table 8: Source-drain diode
Test conditions
Symbol
Parameter
Source-drain
current
I
SD
–
–
50
200
1.6
A
A
Source-drain
current
(pulsed)
I
SDM
Forward on
voltage
V
GS
= 0 V, I
SD
= 50 A
–
–
V
Reverse
recovery time
t
rr
140
0.7
ns
Reverse
recovery
charge
I
SD
= 50 A, di/dt = 100 A/µs, V
DD
= 60 V
Q
rr
–
µC
Reverse
recovery
current
I
RRM
–
–
–
10.6
245
2.6
A
Reverse
recovery time
t
rr
ns
µC
Reverse
recovery
charge
I
SD
= 50 A, di/dt = 100 A/µs, V
DD
= 60 V,
Q
rr
Reverse
recovery
current
I
RRM
–
21
A
Notes:
(1)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
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Electrical characteristics
STW58N60DM2AG
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 5: Transfer characteristics
Figure 4: Output characteristics
Figure 7: Static drain-source on-resistance
Figure 6: Gate charge vs gate-source voltage
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STW58N60DM2AG
Electrical characteristics
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 8: Capacitance variations
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 13: Source- drain diode forward
characteristics
Figure 12: Output capacitance stored energy
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Test circuits
STW58N60DM2AG
3
Test circuits
Figure 14: Switching times test circuit for resistive
load
Figure 15: Gate charge test circuit
Figure 16: Test circuit for inductive load switching
and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 19: Switching time waveform
Figure 18: Unclamped inductive waveform
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STW58N60DM2AG
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
4.1
TO-247 package information
Figure 20: TO-247 package outline
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Package information
STW58N60DM2AG
Table 9: TO-247 package mechanical data
mm.
Dim.
Min.
4.85
2.20
1.0
Typ.
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
A
A1
b
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
ØP
ØR
S
3.55
4.50
5.30
3.65
5.50
5.70
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STW58N60DM2AG
Revision history
5
Revision history
Table 10: Document revision history
Revision
Date
Changes
12-Jun-2015
1
2
First release.
Updated title and features.
Minor text changes.
20-Jul-2015
DocID027912 Rev 2
11/12
STW58N60DM2AG
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–
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All rights reserved
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