STMicroelectronics-STW5NK100Z
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STP5NK100Z, STF5NK100Z
STW5NK100Z
N-channel 1000
V
,
2
.7
Ω
, 3.5 A, TO-220, TO-220F
P
,
T
O-247
SuperMESH3™ Power MOSFET
Features
V
DSS
(@T
JMAX
Type
R
DS(on)
max
I
D
)
3
2
1
STF5NK100Z
STP5NK100Z
STW5NK100Z
1000 V
1000 V
1000 V
< 3.7
Ω
< 3.7
Ω
< 3.7
Ω
3.5 A
3.5 A
3.5 A
TO-220
TO-220FP
■
Extremely high dv/dt capability
■
100% avalanche tested
3
2
1
■
Gate charge minimized
TO-247
■
Very low intrinsic capacitances
■
Very good manufacturing repeatibility
Applications
Figure 1.
Internal schematic diagram
■
Switching application
D(2)
Description
The new SuperMESH™ series of Power
MOSFETS is the result of further design
improvements on ST’s well-established strip-
based PowerMESH™ layout. In addition to
significantly lower on-resistance, the device offers
superior dv/dt capability to ensure optimal
performance even in the most demanding
applications. The SuperMESH™ devices further
complement an already broad range of innovative
high voltage MOSFETs, which includes the
revolutionary MDmesh™ products.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order code
Marking
Package
Packaging
STF5NK100Z
STP5NK100Z
STW5NK100Z
F5NK100Z
P5NK100Z
W5NK100Z
TO-220FP
TO-220
T
u
be
T
u
be
T
u
be
TO-247
May 2009
Doc ID 10850 Rev 5
1/15
15
Contents
STP5NK100Z, STF5NK100Z, STW5NK100Z
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
Doc ID 10850 Rev 5
STP5NK100Z, STF5NK100Z, STW5NK100Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
TO-220, TO-247
Parameter
Unit
TO-220FP
V
DS
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Gate-source voltage
1000
30
V
V
A
3.5
(1)
2.2
(1)
Drain current (continuous) at T
C
= 25°C
3.5
2.2
I
D
Drain current (continuous) at T
C
=100°C
A
(2)
14
(1)
30
I
DM
Drain current (pulsed)
T
o
tal dissipation at T
C
= 25°C
Derating factor
14
125
1
A
W
P
TOT
0.24
W/°C
Gate source ESD
V
ESD(G-S)
4000
4.5
V
(HBM-C=100p
F
,
R
=1.5 k
Ω
)
dv/dt
(3)
Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; Tc= 25°C)
V
ISO
2500
V
T
J
Operating junction temperature
Storage temperature
-55 to 150
°C
T
stg
1. Limited
only by maximum temperature allowed
2. Pulse
width limited by safe operating area
3. I
SD
≤
3.5 A, di/dt
≤
200 A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
TO-220, TO-247
TO-220FP
R
thj-case
Thermal resistance junction-case max
1
4.2
°C/W
°C/W
R
thj-a
T
l
Thermal resistance junction-ambient max
62.5
300
Maximum lead temperature for soldering
purpose
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
I
AR
3.5
A
(pulse width limited by T
JMAX
)
Single pulse avalanche energy
E
AS
250
mJ
(starting T
j
=25 °C, Id=Iar, Vdd=50 V)
Doc ID 10850 Rev 5
3/15
Electrical characteristics
STP5NK100Z, STF5NK100Z, STW5NK100Z
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
1000
V
V
DS
= Max rating,
V
DS
= Max rating,
Tc = 125 °C
1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
50
Gate body leakage current
(V
GS
= 0)
I
GSS
V
GS
=
20 V
±
10
4.5
3.7
µA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
V
GS
= 10
V
,
I
D
= 1.75 A
3
3.75
2.7
Static drain-source on
resistance
R
DS(on)
Ω
Table 6.
Dynamic
Parameter
Symbol
Test conditions
Min.
Typ.
Max.
Unit
(1)
g
fs
Forward transconductance
V
DS
=15
V
,
I
D
= 1.75 A
Input capacitance
–
4
S
C
iss
C
oss
C
rss
1154
106
pF
pF
pF
Output capacitance
V
DS
=25
V
,
f
=1 MHz,
V
GS
=0
–
–
–
Reverse transfer
capacitance
21.3
Equivalent output
capacitance
(2)
C
osseq
V
GS
=0, V
DS
=0 V to 800 V
46.8
pF
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
22.5
7.7
ns
ns
ns
ns
V
DD
=500
V
,
I
D
= 1.75 A,
R
G
=4.7
Ω,
V
GS
=10 V
Off-voltage rise time
Fall time
51.5
19
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
=800
V
,
I
D
= 3.5 A
V
GS
=10 V
42
7.3
59
nC
nC
nC
–
21.7
1. Pulsed:
pulse duration=300 µs, duty cycle 1.5%
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
4/15
Doc ID 10850 Rev 5
STP5NK100Z, STF5NK100Z, STW5NK100Z
Electrical characteristics
Min. Typ. Max. Unit
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I
SD
Source-drain current
–
–
–
3.5
14
A
A
V
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
I
SD
= 3.5 A, V
GS
=0
1.6
I
SD
= 3.5 A,
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
605
3.09
10.5
ns
µC
A
di/dt = 100 A/µs,
V
DD
=30 V
Q
rr
–
–
I
RRM
I
SD
= 3.5 A,
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
742
4.2
ns
µC
A
di/dt = 100 A/µs,
V
DD
=35
V
,
T
j
=150 °C
Q
rr
I
RRM
11.2
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration=300 µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
30
BV
GSO
Gate-source breakdown voltage
Igs= 1
mA (open drain)
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 10850 Rev 5
5/15
Electrical characteristics
STP5NK100Z, STF5NK100Z, STW5NK100Z
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220FP
Safe operating area for TO-220
Safe operating area for TO-247
Figure 3.
Thermal impedance for TO-220FP
Thermal impedance for TO-220
Thermal impedance for TO-247
Figure 4.
Figure 5.
Figure 6.
Figure 7.
6/15
Doc ID 10850 Rev 5
STP5NK100Z, STF5NK100Z, STW5NK100Z
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
Figure 10.
Transconductance
Figure 11.
Static drain-source on resistance
Figure 12.
Gate charge vs gate-source voltage
Figure 13.
Capacitance variations
Doc ID 10850 Rev 5
7/15
Electrical characteristics
STP5NK100Z, STF5NK100Z, STW5NK100Z
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on resistance vs
vs temperature
temperature
Figure 16.
Source-drain diode forward
characteristics
Figure 17.
Normalized BVdss vs temperature
Figure 18.
Maximum avalanche energy vs
temperature
8/15
Doc ID 10850 Rev 5
STP5NK100Z, STF5NK100Z, STW5NK100Z
Test circuits
3
Test circuits
Figure 19.
Unclamped inductive load test
circuit
Figure 20.
Unclamped inductive waveform
Figure 21.
Switching times test circuit for
resistive load
Figure 22.
Gate charge test circuit
Figure 23.
Test circuit for inductive load
switching and diode recovery times
Doc ID 10850 Rev 5
9/15
Package mechanical data
STP5NK100Z, STF5NK100Z, STW5NK100Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
is an ST trademark.
10/15
Doc ID 10850 Rev 5
STP5NK100Z, STF5NK100Z, STW5NK100Z
Package mechanical data
TO-220FP mechanical data
mm
Typ.
Dim.
Min.
Max.
A
B
4.4
2.5
4.6
2.7
2.75
0.7
1
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.70
1.5
5.2
2.7
10.4
G1
H
10
L2
L
3
L4
L5
L6
L7
Di
a
16
2
8
.6
9.
8
2.9
15.9
9
3
0.6
10.6
3
.6
16.4
9.
3
3
3
.2
L7
E
A
B
D
Di
a
L5
L6
F2
F1
F
G
H
G1
L4
L2
L
3
7012510_Rev_J
Doc ID 10850 Rev 5
11/15
Package mechanical data
STP5NK100Z, STF5NK100Z, STW5NK100Z
TO-220 mechanical data
mm
Typ
inch
Typ
Dim
Min
Max
Min
Max
A
b
4.40
0.61
1.14
0.4
8
15.25
4.60
0.
88
1.70
0.70
15.75
0.17
3
0.024
0.044
0.01
9
0.6
0.1
8
1
0.0
3
4
0.066
0.027
0.62
b
1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
0.
393
0.0
9
4
0.1
9
4
0.04
8
0.244
0.0
9
4
0.511
0.1
3
7
0.40
9
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.
9
5
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.
93
16.40
0.645
2
8
.
9
0
1.1
3
7
3
.75
3
.
8
5
2.
9
5
0.147
0.104
0.151
0.116
2.65
12/15
Doc ID 10850 Rev 5
STP5NK100Z, STF5NK100Z, STW5NK100Z
Package mechanical data
TO-247 Mechanical data
mm.
Typ
Dim.
Min.
Max.
A
A1
b
4.
8
5
2.20
1.0
5.15
2.60
1.40
2.40
3
.40
b
1
b
2
c
2.0
3
.0
0.40
1
9
.
8
5
15.45
0.
8
0
D
20.15
15.75
E
e
5.45
1
8
.50
5.50
L
14.20
14.
8
0
4.
3
0
L1
L2
øP
øR
S
3
.70
3
.55
3
.65
4.50
5.50
Doc ID 10850 Rev 5
13/15
Revision history
STP5NK100Z, STF5NK100Z, STW5NK100Z
5
Revision history
Table 9.
Date
Document revision history
Revision
Changes
12-Oct-2004
08-Sep-2005
16-Dec-2005
16-Aug-2006
15-May-2009
1
2
3
4
5
First release
Complete datasheet
Inserted ecopack indication
New template, no content change
14/15
Doc ID 10850 Rev 5
STP5NK100Z, STF5NK100Z, STW5NK100Z
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Doc ID 10850 Rev 5
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