STMicroelectronics-STW70N65DM6-4
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STW70N65DM6-4
Datasheet
N-channel 650
V
,
3
6 mΩ typ., 68 A MDmesh DM6 Power MOSFET
in a TO247
‑
4 package
Features
V
R
DS(on)
max.
I
D
Order code
DS
STW70N65DM6-4
650 V
40 mΩ
68 A
•
•
•
•
•
•
•
Fast-recovery body diode
Lower R
DS(on)
per area vs previous generation
4
3
2
Low gate charge, input capacitance and resistance
100% avalanche tested
1
TO247-4
Drain(1, TAB)
Extremely high dv/dt ruggedness
Zener-protected
Excellent switching performance thanks to the extra driving source pin
Applications
Gate(4)
•
Switching applications
Driver
source (3)
Power
source (2)
Description
AM10177v2Z
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-
recovery diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Q
rr
), recovery time (t
rr
) and excellent
improvement in R
DS(on)
per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
Product summary
Order code
Marking
STW70N65DM6-4
70N65DM6
TO247-4
Package
Packing
Tube
DS13144
–
Rev 2
–
June 2020
For further information contact your local STMicroelectronics sales office.
STW70N65DM6-4
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
±25
68
Unit
V
V
Gate-source voltage
GS
I
D
Drain current (continuous) at T
= 25 °C
A
C
I
D
Drain current (continuous) at T
= 100 °C
43
A
C
I
Drain current (pulsed)
260
450
100
1000
100
A
DM
P
T
o
tal power dissipation at T
= 25 °C
W
TOT
C
Peak diode recovery voltage slope
Peak diode recovery current slope
MOSFET dv/dt ruggedness
V/ns
A/μs
V/ns
°C
T
Storage temperature range
STG
-55 to 150
T
Operating junction temperature range
°C
J
1. Pulse
width limited by safe operating area.
2.
3.
I
≤ 68 A, V
< V
, V
= 400 V.
(BR)DSS DD
SD
DS (peak)
V
≤ 520 V.
DS
Table 2.
Thermal data
Parameter
Symbol
Value
0.28
50
Unit
°C/W
°C/W
R
thj-case
Thermal resistance junction-case
Thermal resistance junction-ambient
R
thj-amb
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
8
Unit
A
I
Avalanche current, repetitive or not repetitive (t
limited by T
max)
AR
p
J
E
Single pulse avalanche energy (starting T
= 25 °C, I
= I
; V
= 50 V)
J D
AR DD
1.8
J
AS
DS13144
–
Rev 2
page 2/12
STW70N65DM6-4
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
V
V
GS
V
GS
V
GS
V
DS
V
DS
V
GS
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
650
V
(BR)DSS
D
= 0
V
, V
=
6
50 V
10
μA
DS
I
Zero gate voltage drain current
DSS
100
DS
C
I
= 0
V
, V
=
±
25 V
Gate-body leakage current
Gate threshold voltage
±5
4.75
40
μA
V
GSS
GS
V
= V
, I
= 250 μA
3.25
4
GS(th)
DS(on)
GS
D
R
= 10
V
, I
=
3
4 A
D
Static drain-source on resistance
36
mΩ
1. Defined
by design, not subject to production test.
Table 5.
Dynamic characteristics
Test conditions
Symbol
Parameter
Input capacitance
Min.
Typ. Max. Unit
C
iss
–
–
–
–
–
–
–
–
4900
280
3
–
–
–
–
–
–
–
–
C
oss
V
= 100 V, f = 1 MHz, V
= 0 V
Output capacitance
DS
GS
pF
C
rss
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
V
= 0 to 520
V
, V
= 0 V
C
oss eq
.
859
2.3
125
33
DS
GS
R
G
f = 1 MHz, I
= 0 A
D
Ω
Q
g
V
DD
= 520
V
, I
=
6
8
A, V
= 0
to 10 V
D GS
Q
Gate-source charge
nC
gs
Q
Gate-drain charge
56
gd
1.
C
oss eq
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
t
Turn-on delay time
Rise time
–
–
–
–
TBD
TBD
TBD
TBD
–
–
–
–
ns
ns
ns
ns
V
= 325
V
, I
=
3
4 A,
d(on)
DD
D
R
= 4.7 Ω , V
= 10 V
t
r
G
GS
t
Turn-off delay time
Fall time
d(off)
t
f
DS13144
–
Rev 2
page 3/12
STW70N65DM6-4
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ. Max. Unit
I
–
–
–
–
–
–
–
–
–
68
260
1.6
A
A
SD
I
Source-drain current (pulsed)
Forward on voltage
SDM
V
V
= 0
V
, I
=
6
8 A
SD
V
GS
SD
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
17
ns
µC
A
I
= 68 A, di/dt = 100 A/μs, V
= 60 V
DD
SD
Q
1.08
12.7
308
4.16
27
rr
I
RRM
t
I
= 68 A, di/dt = 100 A/μs,
= 60
V
, T
=
1
50 °C
ns
µC
A
rr
SD
V
Q
DD
J
rr
I
RRM
1. Pulse
width is limited by safe operating area.
2. Pulsed:
pulse duration = 300 μs, duty cycle 1.5%.
DS13144
–
Rev 2
page 4/12
STW70N65DM6-4
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Maximum transient thermal impedance
GADG280620190822ZTH
Z
thj-c
(°C/W)
GADG280620190757SOA
I
D
(A)
Operation in this area
is limited by R
DS(on)
I
DM
duty = 0.5
0.2
0.3
0.4
s
t
p
= 1 µ
10
2
10
1
10
-1
s
t
p
= 10 µ
V
(BR)DSS
0.1
R
DS(on)
max.
10
-2
10
-3
s
t
p
= 100 µ
0.05
10
0
T
C
= 25 °C, T
J
≤
150 °C
single pulse
single pulse
t
p
= 1 ms
V
DS
(V)
10
-1
t
p
(s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
-1
10
0
10
1
10
2
Figure 3.
Typical output characteristics
Figure 4.
Typical transfer characteristics
GADG060620191330OCH
GADG060620191331TCH
I
D
I
D
(A)
(A)
V
GS
= 9, 10 V
240
240
200
200
V
GS
= 8 V
V
DS
= 12 V
160
160
120
80
120
V
GS
= 7 V
80
V
GS
= 6 V
40
40
0
0
0
2
4
6
8
10
12
V
DS
(V)
4
5
6
7
8
9
V
GS
(V)
Figure 5.
Typical gate charge characteristics
Figure 6.
Typical drain-source on-resistance
GADG060620191331QVG
V
DD
= 520 V, I
D
= 68 A
GADG060620191329RID
V
DS
(V)
V
GS
(V)
R
DS(on)
(mΩ)
600
500
400
300
200
12
10
8
39
Q
g
38
37
Q
gs
Q
gd
V
GS
=10 V
6
36
35
4
100
0
2
34
33
0
0
30
60
90
120 150
Q
g
(nC)
0
10
20
30
40
50
60
I
D
(A)
DS13144
–
Rev 2
page 5/12
STW70N65DM6-4
Electrical characteristics (curves)
Figure 7.
Typical capacitance characteristics
Figure 8.
Typical output capacitance stored energy
GADG060620191330CVR
GADG060620191332EOS
C
E
OSS
(pF)
(µJ)
50
10
4
C
ISS
40
30
20
10
3
C
OSS
f = 1 MHz
10
2
C
RSS
10
1
10
0
10
0
10
-1
10
0
10
1
10
2
V
DS
(V)
0
100 200 300 400 500 600
V
DS
(V)
Figure 9.
Normalized gate threshold vs temperature
Figure 10.
Normalized on-resistance vs. temperature
GADG050620191111VTH
GADG050620191125RON
V
GS(th)
R
DS(on)
(norm.)
(norm.)
1.1
2.5
I
D
= 250 µA
1.0
2.0
V
GS
= 10 V
1.5
0.9
0.8
1.0
0.7
0.6
0.5
0.0
-75
-25
25
75
125
T
J
(°C)
-75
-25
25
75
125
T
J
(°C)
Figure 11.
Normalized breakdown voltage vs temperature
Figure 12.
Typical reverse diode forward characteristics
GADG060620191329VTH
GADG060620191330SDF
V
(BR)DSS
V
SD
(norm.)
(V)
1.1
1.10
T
J
= -50 °C
I
D
= 1 mA
1.05
1.0
0.9
T
J
= 25 °C
1.00
0.95
0.8
T
J
= 150 °C
0.7
0.90
0.85
0.6
0.5
-75
-25
25
75
125
T
J
(°C)
0
10
20
30
40
50
60
I
SD
(A)
DS13144
–
Rev 2
page 6/12
STW70N65DM6-4
Test circuits
3
Test circuits
Figure 14.
Test circuit for gate charge behavior
Figure 13.
Switching times test circuit for resistive load
V
DD
R
L
2200
3.3
µF
R
L
µF
V
DD
+
D.U.
T
.
I
G
= CONST
2.7 kΩ
100 Ω
V
D
R
G
V
GS
V
GS
pulse width
+
D.U.
T
.
V
G
2200
μF
P
W
47 kΩ
GND1
(driver signal)
GND2
(power)
1 kΩ
GND1
GND2
AM15855v1
GADG180720181011SA
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
A
A
A
L
D
S
FAST
DIODE
L=100µH
G
D.U.
T
.
B
V
D
2200
µF
3.3
µF
3.3
µF
1000
µF
B
V
DD
B
+
V
DD
+
D
S
25Ω
I
D
G
R
G
D.U.
T
.
V
i
D.U.
T
.
P
w
GND2
GND1
GND1
GND2
AM15858v1
AM15857v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS13144
–
Rev 2
page 7/12
STW70N65DM6-4
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
TO247-4 package information
Figure 19.
TO247-4 package outline
8405626_2
DS13144
–
Rev 2
page 8/12
STW70N65DM6-4
TO247-4 package information
Table 8.
TO247-4 mechanical data
mm
Dim.
Min.
4.90
2.31
1.90
1.16
1.15
0
Typ.
5.00
2.41
2.00
Max.
5.10
2.51
2.10
1.29
1.25
0.20
0.66
0.62
21.10
16.85
1.35
25.27
15.90
13.50
5.10
2.60
2.64
5.18
20.10
3.70
7.40
2.60
6.00
A
A1
A2
b
b1
b2
c
1.20
0.59
0.58
20.90
16.25
1.05
24.97
15.70
13.10
4.90
2.40
2.44
4.98
19.80
3.50
c1
D
0.60
21.00
16.55
1.20
D1
D2
D3
E
25.12
15.80
13.30
5.00
E1
E2
E3
e
2.50
2.54
e1
L
5.08
19.92
3.60
P
P1
P2
Q
2.40
5.60
2.50
6.15
S
T
9.80
6.00
10.20
6.40
U
DS13144
–
Rev 2
page 9/12
STW70N65DM6-4
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
TO247-4 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
DS13144
–
Rev 2
page 11/12
STW70N65DM6-4
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.
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© 2020 STMicroelectronics – All rights reserved
DS13144
–
Rev 2
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