STMicroelectronics-STWA45N65M5
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STFW45N65M5,
STW45N65M5, STWA45N65M5
N-channel 650 V, 35 A, 0.067
Ω
typ., MDmesh™ V Power MOSFE
T
s
in TO-3P
F
, TO-247 and TO-247 long leads packages
Datasheet production
data
–
Features
Order codes
V
DS
@ T
Jmax
R
DS(on)
max
I
D
STFW45N65M5
STW45N65M5
STWA45N65M5
710 V
0.078
Ω
35 A
1
3
3
2
2
1
1
•
Worldwide best R
DS(on)
* area
TO-247
TO-247 long leads
TO-3PF
•
Higher V
DSS
rating and high dv/dt capability
•
Excellent switching performance
•
100% avalanche tested
Figure 1.
Internal schematic diagram
Applications
•
Switching applications
‘ꢅꢆꢇ
Description
These devices are N-channel MDmesh™ V
Power MOSFE
T
s
b
ased on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFE
T
s
, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
*ꢅꢁꢇ
6ꢅꢈꢇ
$0ꢀꢁꢂꢃꢄYꢁ
Table 1. Device summary
Order codes
Marking
Package
Packaging
STFW45N65M5
STW45N65M5
STWA45N65M5
TO-3PF
TO-247
45N65M5
Tube
TO-247 long leads
May 2014
DocID024049 Rev 2
1/18
This is information on a product in full production.
Contents
STFW45N65M5, STW45N65M5, STWA45N65M5
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
DocID024049 Rev 2
STFW45N65M5, STW45N65M5, STWA45N65M5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-247,
TO-3PF
TO-247 long leads
V
GS
I
D
Gate-source voltage
± 25
35
V
A
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
I
D
22
A
(1)
I
DM
140
210
15
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
57
W
dv/dt
(2)
Peak diode recovery voltage slope
dv/dt
(3)
MOSFET dv/dt ruggedness
V/ns
V/ns
50
Insulation withstand voltage (RMS) from all three
V
ISO
3500
V
leads to external heat sink (t=1 s;
T
c
=25°C)
T
stg
T
j
Storage temperature
– 55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited
by maximum junction temperature
2.
3.
I
≤
35 A, di/dt
≤
400 A/
μ
s, V
< V
, V
= 400 V
SD
DS(Peak)
(BR)DSS DD
V
< 520 V
DS
Table 3. Thermal data
Value
Symbol
Parameter
Unit
TO-247,
TO-247 long leads
TO-3PF
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
2.2
50
0.6
50
°C/W
°C/W
Table 4. Avalanche characteristics
Parameter
Symbol
Value
Unit
Avalanche current, repetitive or not repetitive
(pulse width limited by T
jmax
I
AR
9
A
)
Single pulse avalanche energy (starting t
j
=25°C,
I
d
= I
AR
; V
dd
=50)
E
AS
810
mJ
DocID024049 Rev 2
3/18
18
Electrical characteristics
STFW45N65M5, STW45N65M5, STWA45N65M5
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5. On /off states
Test conditions
Symbol
Parameter
Drain-source
Min.
Typ.
Max. Unit
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
650
V
breakdown voltage
V
V
DS
= 650 V
1
μ
A
μ
A
Zero gate voltage
drain current (V
GS
= 0)
I
DSS
DS
= 650
V
,
T
C
=125 °C
100
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
= ± 25 V
± 100
nA
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250
μ
A
3
4
5
V
Static drain-source
V
GS
= 10
V
,
I
D
= 17.5 A
on-resistance
0.067 0.078
Ω
Table 6. Dynamic
Symbol
Parameter
Input capacitance
Output capacitance
Test conditions
Min.
Typ.
3470
82
Max. Unit
C
iss
–
–
–
–
pF
pF
V
V
DS
= 100
V
, f = 1
M
Hz,
GS
= 0
C
oss
C
rss
Reverse transfer
capacitance
–
–
7
–
–
pF
pF
Equivalent
capacitance time
related
(1)
C
o(tr)
280
V
DS
= 0 to 520
V
, V
GS
= 0
f = 1 MHz open drain
Equivalent
capacitance energy
related
(2)
C
o(er)
–
–
79
2
–
–
pF
Intrinsic gate
resistance
R
G
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
82
18.5
35
–
–
–
nC
nC
nC
V
V
DD
= 520 V, I
D
= 17.5 A,
GS
= 10 V
1. Time
related is defined as a constant equivalent capacitance giving the same charging time as C
when
oss
V
increases from 0 to 80% V
DSS
DS
2. Energy
related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
increases from 0 to 80% V
DS
DSS
4/18
DocID024049 Rev 2
STFW45N65M5, STW45N65M5, STWA45N65M5
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
Test conditions
Min. Typ.
Max Unit
t
d
(v)
t
r
(v)
t
f
(i)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
–
–
–
–
79.5
11
–
–
–
–
ns
ns
ns
ns
V
DD
= 400 V, I
D
= 23 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
9.3
16
t
c
(off)
Table 8. Source drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max.
Unit
I
SD
Source-drain current
–
–
–
–
–
–
–
–
–
35
140
1.5
A
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
I
SD
= 35 A, V
GS
= 0
V
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
392
7.4
38
ns
μ
C
A
I
SD
= 35 A, di/dt = 100 A/
μ
s
I
RRM
t
rr
468
9.7
42
ns
μ
C
A
I
SD
= 35 A, di/dt = 100 A/
μ
s
Q
rr
V
DD
= 100
V
,
T
j
= 150 °C
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300
μ
s, duty cycle 1.5%
DocID024049 Rev 2
5/18
18
Electrical characteristics
STFW45N65M5, STW45N65M5, STWA45N65M5
Figure 3. Thermal impedance for TO-3PF
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-3PF
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Figure 4.
Safe operating area for TO-247 and
TO-247LL
Figure 5. Thermal impedance for TO-247 and
TO-247LL
AM13079v1
I
D
(A)
Tj=150°C
T
c
=25°C
Single pulse
100
10µs
100µs
10
1
1ms
10ms
0.1
10
V
DS
(V)
0.1
1
100
Figure 6.
Output characteristics
Figure 7. Transfer characteristics
AM13080v1
AM13081v1
I
D
(A)
90
I
D
(A)
90
80
70
60
50
40
V
GS
= 9, 10V
V
DS
=25V
8V
80
70
7V
60
50
40
30
20
30
20
6V
10
0
0
10
0
3
5
20
V
DS
(V)
10
15
4
7
8
V
GS
(V)
5
6
9
6/18
DocID024049 Rev 2
STFW45N65M5, STW45N65M5, STWA45N65M5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
Figure 9. Static drain-source on-resistance
AM13082v1
AM13083v1
V
(V)
GS
R
DS(on)
(
Ω
)
V
DS
(V)
V
GS
=10V
V
DS
V
I
DD
=520V
=17.5A
12
D
500
0.071
10
8
400
300
200
100
0.069
0.067
0.065
0.063
0.061
6
4
2
0
0
(nC)
15
20
25
40
80
5
10
100
Q
g
I
D
(A)
0
20
60
0
Figure 10.
Capacitance variations
Figure 11. Output capacitance stored energy
AM13084v1
AM13085v1
C
(pF)
E
oss
(µJ)
16
10000
14
Ciss
12
10
8
1000
100
10
1
Coss
Crss
6
4
2
0
0
0.1
100
200
400 500
600
1
10
V
DS
(V)
100
300
V
DS
(V)
Figure 12. Normalized gate threshold voltage
vs. temperature
Figure 13. Normalized on-resistance vs.
temperature
AM05459v2
AM05460v2
V
GS(th)
R
DS(on)
(norm)
(norm)
I
D
=250µA
V
GS
=10V
1.10
2.1
I
D
=17.5V
1.9
1.7
1.5
1.3
1.1
1.00
0.90
0.80
0.70
0.9
0.7
0.5
-50
-25
-50
-25
0
25 50 75
T
J
(°C)
0
25 50 75
T
J
(°C)
100
100
DocID024049 Rev 2
7/18
18
Electrical characteristics
STFW45N65M5, STW45N65M5, STWA45N65M5
Figure 14. Drain-source diode forward
characteristics
Figure 15. Normalized V
(BR)DSS
vs. temperature
AM05461v1
AM10399v1
V
(V)
SD
V
(BR)DSS
(norm)
T
J
=-50°C
1.08
1.2
I
D
= 1mA
1.06
1.04
1.02
1.00
1.0
0.8
0.6
T
J
=25°C
T
J
=150°C
0.98
0.96
0.4
0.2
0.94
0.92
0
0
-50
-25
10
20
30
40
50 I
SD
(A)
0
25 50 75
T
J
(°C)
100
Figure 16. Switching losses vs. gate
resistance
(1)
AM13086v1
E
(
μ
J)
Eon
I
D
=23A
V
DD
=400V
V
GS
=10V
600
500
400
Eoff
300
200
100
0
20
30
40
10
R
G
(
Ω
)
0
1. Eon
including reverse recovery of a SiC diode
8/18
DocID024049 Rev 2
STFW45N65M5, STW45N65M5, STWA45N65M5
Test circuits
3
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
Concept waveform for Inductive Load
T
u
rn-off
V
(BR)DSS
Id
V
D
90%Vds
90%Id
Tdelay-off
I
DM
Vgs
90%Vgs
10%Vds
on
I
D
Vgs(I(t))
V
DD
V
DD
10%Id
Vds
Trise
Tfall
Tcross -over
AM01472v1
AM05540v2
DocID024049 Rev 2
9/18
18
Package mechanical data
STFW45N65M5, STW45N65M5, STWA45N65M5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK is an ST trademark.
10/18
DocID024049 Rev 2
STFW45N65M5, STW45N65M5, STWA45N65M5
Package mechanical data
4.1
TO-3P
F
,
S
TFW45N65M5
Figure 23. TO-3PF drawing
7627132_D
DocID024049 Rev 2
11/18
18
Package mechanical data
STFW45N65M5, STW45N65M5, STWA45N65M5
Table 9. TO-3PF mechanical data
mm
Dim.
Min.
Typ.
Max.
A
C
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
D
D1
E
F
F2
G
G1
H
5.45
10
15.30
9.80
15.70
10.20
23.20
26.70
44.40
4.70
L
L2
L3
L4
L5
L6
L7
N
22.80
26.30
43.20
4.30
24.30
14.60
1.80
24.70
15
2.20
R
3.80
4.20
∅
3.40
3.80
12/18
DocID024049 Rev 2
STFW45N65M5, STW45N65M5, STWA45N65M5
Package mechanical data
4.2
TO-247, STW45N65M5
Figure 24. TO-247 drawing
0075325_G
DocID024049 Rev 2
13/18
18
Package mechanical data
STFW45N65M5, STW45N65M5, STWA45N65M5
Table 10. TO-247 mechanical data
mm.
Typ.
Dim.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
14/18
DocID024049 Rev 2
STFW45N65M5, STW45N65M5, STWA45N65M5
Package mechanical data
4.3
TO-247 long leads, STWA45N65M5
Figure 25. TO-247 long leads drawing
7395426_G
DocID024049 Rev 2
15/18
18
Package mechanical data
STFW45N65M5, STW45N65M5, STWA45N65M5
Table 11. TO-247 long leads mechanical data
mm
Dim.
Min.
Typ.
Max.
A
D
4.90
1.85
0.55
1.07
1.90
2.87
5.15
2.10
0.67
1.32
2.38
3.38
E
F
F1
F2
G
10.90 BSC
H
15.77
20.82
4.16
16.02
21.07
4.47
L
L1
L2
L3
L4
L5
M
5.49
5.74
20.05
3.68
20.30
3.93
6.04
6.29
2.25
2.55
V
10°
3°
V1
V3
Dia.
20°
3.55
3.66
16/18
DocID024049 Rev 2
STFW45N65M5, STW45N65M5, STWA45N65M5
Revision history
5
Revision history
2
Table 12. Document revision history
Changes
Date
Revision
11-Dec-2012
1
First release.
– Added: TO-3PF package
– Added: dv/dt (MOSFET dv/dt ruggedness) parameter and V
ISO
09-May-2014
2
– Minor text changes
DocID024049 Rev 2
17/18
18
STFW45N65M5, STW45N65M5, STWA45N65M5
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DocID024049 Rev 2
