STMicroelectronics-STWA57N65M5
| Part # | STMicroelectronics-STWA57N65M5 |
Download  | STMicroelectronics-STWA57N65M5 |
STW57N65M5,
STWA57N65M5
N-channel 650
V
,
0
.056
Ω
typ., 42 A MDmesh™ V Power MOSFE
T
s
in TO-247 and TO-247 long leads packages
Datasheet
–
production data
Features
Order codes
V
DS
@ T
Jmax
R
DS(on)
max
I
D
STW57N65M5
710 V
0.063
Ω
42 A
STWA57N65M5
•
Worldwide best R
DS(on)
*area amongst the
3
2
silicon based devices
1
•
Higher V
DSS
rating, high dv/dt capability
•
Excellent switching performance
TO-247
TO-247 long leads
•
Easy to drive, 100% avalanche tested
Applications
Figure 1.
Internal schematic diagram
•
Switching applications
‘ꢅꢆꢇ
Description
These devices are N-channel MDmesh™ V
Power MOSFE
T
s
b
ased on an innovative
proprietary vertical process technology, which
is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
*ꢅꢁꢇ
resistance, which is unmatched among silicon-
based Power MOSFE
T
s
, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
6ꢅꢈꢇ
$0ꢀꢁꢂꢃꢄYꢁ
Table 1. Device summary
Order codes
Marking
Packages
Packaging
STW57N65M5
STWA57N65M5
TO-247
57N65M5
Tube
TO-247 long leads
December 2013
DocID024050 Rev 2
1/16
This is information on a product in full production.
Contents
STW57N65M5, STWA57N65M5
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
DocID024050 Rev 2
STW57N65M5, STWA57N65M5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
GS
I
D
Gate- source voltage
± 25
42
V
A
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
I
D
26.5
168
250
A
(1)
I
DM
A
P
TOT
I
AR
T
o
tal dissipation at T
C
= 25 °C
W
Max current during repetitive or single pulse avalanche
(pulse width limited by T
JMAX
11
A
)
Single pulse avalanche energy
(starting T
j
= 25°C, I
D
= I
AR
, V
DD
= 50V)
E
AS
960
mJ
dv/dt
(2)
Peak diode recovery voltage slope
dv/dt
(3)
MOSFET dv/dt ruggedness
15
50
V/ns
V/ns
°C
T
stg
T
j
Storage temperature
-55 to 150
150
Max. operating junction temperature
°C
1. Pulse
width limited by safe operating area.
2.
3.
I
≤
42 A, di/dt
≤
520 V
≤
400 A/
μ
s, V
< V
, V
= 400 V
SD
DS(peak)
(BR)DSS DD
V
DS
Table 3. Thermal data
Parameter
Symbol
Value
Unit
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
0.50
50
°C/W
°C/W
DocID024050 Rev 2
3/16
16
Electrical characteristics
STW57N65M5, STWA57N65M5
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. On /off states
Test conditions
Symbol
Parameter
Drain-source
Min.
Typ.
Max. Unit
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
V
DS
= 650 V
650
V
breakdown voltage
Zero gate voltage
1
100
μ
A
μ
A
I
DSS
drain current (V
GS
= 0)
V
DS
= 650
V
,
T
C
=125 °C
Gate-body leakage
V
GS
= ± 25 V
I
GSS
±100 nA
current (V
DS
= 0)
V
GS(th)
R
DS(on
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250
μ
A
3
4
5
V
Static drain-source on-
V
GS
= 10
V
,
I
D
= 21 A
0.056 0.063
Ω
resistance
Table 5. Dynamic
Test conditions
Symbol
Parameter
Min.
Typ.
Max. Unit
C
iss
Input capacitance
–
–
4200
115
–
pF
pF
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
C
oss
Output capacitance
Reverse transfer
capacitance
C
rss
–
–
9
pF
pF
Equivalent output
capacitance energy
related
(1)
C
o(er)
93
–
–
V
GS
= 0, V
DS
= 0 to 520 V
Equivalent output
capacitance time
related
(2)
C
o(tr)
–
–
303
1.3
pF
Intrinsic gate
resistance
R
G
f = 1 MHz, I
D
=0
DD
= 520
V
,
I
D
= 21 A,
–
–
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
98
23
40
nC
nC
nC
V
V
GS
= 10 V
1.
2.
C
is a constant capacitance value that gives the same stored energy as C
while V
is rising from 0
DS
o(er)
oss
to 80% V
DSS
C
is a constant capacitance value that gives the same charging time as C
while V
is rising from 0
DS
o(tr)
oss
to 80% V
DSS
4/16
DocID024050 Rev 2
STW57N65M5, STWA57N65M5
Electrical characteristics
Min. Typ. Max.
Unit
Table 6. Switching times
Test conditions
Symbol
Parameter
t
d(V)
t
r(V)
t
f(i)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
–
–
–
–
73
15
12
19
–
–
–
–
ns
ns
ns
ns
V
DD
= 400 V, I
D
= 28 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
t
c(off)
Table 7. Source drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max.
Unit
I
SD
I
SDM
Source-drain current
42
A
A
–
(1)
Source-drain current (pulsed)
168
(2)
V
SD
Forward on voltage
I
SD
= 42 A, V
GS
= 0
SD
= 42 A, di/dt = 100 A/
μ
s
–
–
–
–
–
–
–
1.5
V
ns
μ
C
A
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
418
8
I
I
RRM
t
rr
40
528
12
44
ns
μ
C
A
I
SD
= 42 A, di/dt = 100 A/
μ
s
Q
rr
V
DD
= 100 V, T
j
= 150 °C
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300
μ
s, duty cycle 1.5%
DocID024050 Rev 2
5/16
16
Electrical characteristics
STW57N65M5, STWA57N65M5
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM14705v1
I
D
(A)
100
10µs
100µs
10
1ms
Tj=150°C
Tc=25°C
10ms
1
Single
pulse
0.1
10
V
DS
(V)
0.1
1
100
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM14706v1
AM14707v1
I
D
(A)
I
D
(A)
V
= 9, 10 V
GS
V
= 25 V
DS
100
80
60
40
20
0
100
V
= 8 V
GS
80
60
40
V
= 7 V
GS
V
= 6 V
16
GS
20
0
4
7
8
9
V
12
3
5
6
8
4
V
DS
(V)
GS
(V)
0
Figure 6. Gate charge vs gate-source voltage
Figure 7. Static drain-source on-resistance
AM14708v1
AM14709v1
V
(V)
GS
R
DS(on)
(
Ω
)
V
DS
V
DD
=520V
(V)
500
0.062
V
GS
=10V
10
I
D
=21A
V
DS
0.060
0.058
400
300
200
8
6
4
0.056
0.054
0.052
0.05
100
0
2
0
20
30
10
40
80
100
Q
g
(nC)
I
D
(A)
0
20
60
0
6/16
DocID024050 Rev 2
STW57N65M5, STWA57N65M5
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Output capacitance stored energy
AM14710v1
AM14711v1
C
E
oss
(pF)
(µJ)
18
16
14
10000
1000
Ciss
12
10
8
100
Coss
Crss
6
4
2
10
1
0
0
0.1
100
200
400 500
1
10
V
DS
(V)
100
300
600
V
DS
(V)
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on-resistance vs
temperature
AM04972v1
AM05501v2
V
GS(th)
R
DS(on)
(norm)
(norm)
1.10
I
D
=250µA
2.1
I
D
= 21 A
1.9
1.7
V
GS
= 10 V
1.00
0.90
1.5
1.3
1.1
0.9
0.80
0.70
0.7
0.5
-50
-25
-50
-25
0
25 50 75
T
J
(°C)
0
25 50 75
T
J
(°C)
125
100
100
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized V
DS
vs temperature
AM04974v1
AM10399v1
V
(V)
SD
V
DS
(norm)
T
J
=-50°C
1.08
1.2
I
D
= 1mA
1.06
1.04
1.02
1.00
1.0
0.8
T
J
=25°C
0.6
0.4
T
J
=150°C
0.98
0.96
0.2
0
0.94
0.92
0
-50
-25
10
20
30
40
50
I
SD
(A)
0
25 50 75
T
J
(°C)
100
DocID024050 Rev 2
7/16
16
Electrical characteristics
STW57N65M5, STWA57N65M5
Figure 14. Switching losses vs gate
resistance
(1)
AM14712v1
E
(
μ
J)
Eon
V
DD
=400V
V
GS
=10V
I
D
=28A
800
600
Eoff
400
200
0
20
30
40
10
R
G
(
Ω
)
0
1. Eon
including reverse recovery of a SiC diode
8/16
DocID024050 Rev 2
STW57N65M5, STWA57N65M5
Test circuits
3
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
Concept waveform for Inductive Load
T
u
rn-off
V
(BR)DSS
Id
V
D
90%Vds
90%Id
Tdelay-off
I
DM
Vgs
90%Vgs
10%Vds
on
I
D
Vgs(I(t))
V
DD
V
DD
10%Id
Vds
Trise
Tfall
Tcross -over
AM01472v1
AM05540v2
DocID024050 Rev 2
9/16
16
Package mechanical data
STW57N65M5, STWA57N65M5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/16
DocID024050 Rev 2
STW57N65M5, STWA57N65M5
Package mechanical data
Table 8. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
DocID024050 Rev 2
11/16
16
Package mechanical data
STW57N65M5, STWA57N65M5
Figure 21. TO-247 drawing
0075325_G
12/16
DocID024050 Rev 2
STW57N65M5, STWA57N65M5
Package mechanical data
Table 9. TO-247 long leads mechanical data
mm
Dim.
Min.
Typ.
Max.
A
D
4.90
1.85
0.55
1.07
1.90
2.87
5.15
2.10
0.67
1.32
2.38
3.38
E
F
F1
F2
G
10.90 BSC
H
15.77
20.82
4.16
16.02
21.07
4.47
L
L1
L2
L3
L4
L5
M
5.49
5.74
20.05
3.68
20.30
3.93
6.04
6.29
2.25
2.55
V
10°
3°
V1
V3
Dia.
20°
3.55
3.66
DocID024050 Rev 2
13/16
16
Package mechanical data
STW57N65M5, STWA57N65M5
Figure 22. TO-247 long leads drawing
7395426_G
14/16
DocID024050 Rev 2
STW57N65M5, STWA57N65M5
Revision history
5
Revision history
Table 10. Document revision history
Changes
Date
Revision
17-Dec-2012
1
First release.
13-Dec-2013
2
– Minor text changes
DocID024050 Rev 2
15/16
16
STW57N65M5, STWA57N65M5
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2013 STMicroelectronics – All rights reserved
STMicroelectronics group of companies
Australia – Belgium – Brazil – Canada – China – Czech Republic – Finland – France – Germany – Hong Kong – India – Israel – Italy – Japan –
Malaysia – Malta – Morocco – Philippines – Singapore – Spain – Sweden – Switzerland – United Kingdom – United States of America
16/16
DocID024050 Rev 2
