STMicroelectronics-STWA88N65M5
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STW88N65M5
STWA88N65M5
N-channel 650
V
,
0
.024
Ω
typ., 84 A, MDmesh™ V
Power MOSFE
T
s
i
n TO-247 and TO-247 long leads packages
Datasheet
–
production data
Features
V
DSS
@T
jmax.
Order codes
R
DS(on)
max.
I
D
STW88N65M5
STWA88N65M5
710 V
0.029
Ω
84 A
3
2
•
Worldwide best R
DS(on)
in TO-247
•
Higher V
DSS
rating
1
TO-247
TO-247 long leads
•
Higher dv/dt capability
•
Excellent switching performance
•
Easy to drive
•
100% avalanche tested
Figure 1. Internal schematic diagram
Applications
‘ꢅꢆꢇ
•
High efficiency switching applications:
– Servers
– PV
inverters
–
T
e
lecom
infrastructure
– Multi
kW battery chargers
*ꢅꢁꢇ
Description
6ꢅꢈꢇ
These devices are N-channel MDmesh™ V
Power MOSFE
T
s
b
ased on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
$0ꢀꢁꢂꢃꢄYꢁ
resistance, which is unmatched among silicon-
based Power MOSFE
T
s
, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
Marking
Packages
Packaging
STW88N65M5
STWA88N65M5
TO-247
88N65M5
Tube
TO-247 long leads
July 2014
DocID022522 Rev 5
1/16
This is information on a product in full production.
16
Contents
STW88N65M5, STWA88N65M5
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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DocID022522 Rev 5
STW88N65M5, STWA88N65M5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
GS
I
D
Gate- source voltage
±25
84
V
A
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
I
D
50.5
336
450
A
(1)
I
DM
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
W
Max current during repetitive or single pulse avalanche
I
AR
15
A
(pulse width limited by T
JMAX
)
Single pulse avalanche energy
E
AS
2000
mJ
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
dv/dt
(2)
Peak diode recovery voltage slope
15
– 55 to 150
150
V/ns
°C
T
stg
T
j
Storage temperature
Max. operating junction temperature
°C
1. Pulse
width limited by safe operating area
2.
≤
84 A, di/dt = 400 A/µs, peak V
< V
, V
= 400 V
(BR)DSS DD
I
SD
DS
Table 3. Thermal data
Parameter
Symbol
Value
Unit
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
0.28
50
°C/W
°C/W
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3/16
Electrical characteristics
STW88N65M5, STWA88N65M5
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. On /off states
Test conditions
Symbol
Parameter
Drain-source
Min.
Typ.
Max. Unit
V
(BR)DSS
V
GS
= 0, I
D
= 1 mA
650
V
breakdown voltage
V
GS
= 0, V
DS
= 650 V
GS
= 0, V
DS
= 650 V,
1
µA
µA
Zero gate voltage
drain current
I
DSS
V
100
T
C
=125 °C
Gate-body leakage
current
I
GSS
V
DS
= 0, V
GS
= ± 25 V
± 100
nA
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
Static drain-source
3
4
5
V
V
GS
= 10
V
,
I
D
= 42 A
0.024 0.029
Ω
on- resistance
Table 5. Dynamic
Test conditions
Symbol
Parameter
Min.
Typ.
Max. Unit
C
iss
Input capacitance
Output capacitance
–
–
8825
223
–
–
pF
pF
C
oss
V
GS
= 0, V
DS
= 100 V,
f = 1 MHz
Reverse transfer
capacitance
C
rss
–
–
11
–
–
pF
pF
Equivalent
capacitance time
related
(1)
C
o(tr)
V
GS
= 0, V
DS
= 0 to 520 V
778
Equivalent
capacitance energy
related
(2)
C
o(er)
V
GS
= 0, V
DS
= 0 to 520 V
f = 1 MHz open drain
–
–
202
–
–
pF
Intrinsic gate
resistance
R
G
1.79
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
204
51
–
–
–
nC
nC
nC
V
DD
= 520
V
, I
D
= 42 A,
V
GS
= 10 V
84
1.
2.
C
is a constant capacitance value that gives the same charging time as C
while V
is rising from 0
oss DS
o(tr)
to 80% V
.
DSS
C
is a constant capacitance value that gives the same stored energy as C
while V
is rising from 0
oss DS
o(er)
to 80% V
.
DSS
4/16
DocID022522 Rev 5
STW88N65M5, STWA88N65M5
Electrical characteristics
Min. Typ. Max.
Unit
Table 6. Switching times
Test conditions
Symbol
Parameter
t
d(V)
t
r(V)
t
f(i)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
–
–
–
–
141
16
–
–
–
–
ns
ns
ns
ns
V
DD
= 400 V, I
D
= 56 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
29
t
c(off)
56
Table 7. Source drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max.
Unit
I
SD
Source-drain current
–
84
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
–
–
–
–
–
–
–
336
1.5
A
V
(2)
V
SD
I
SD
= 84 A, V
GS
= 0
t
rr
Q
rr
I
RRM
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
544
14
ns
µC
A
I
SD
= 84 A,
di/dt = 100 A/µs
50
I
SD
= 84 A,
di/dt = 100 A/µs
660
20
ns
µC
Q
rr
V
DD
= 100
V
,
T
j
= 150 °C
I
RRM
Reverse recovery current
–
60
A
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DocID022522 Rev 5
5/16
Electrical characteristics
STW88N65M5, STWA88N65M5
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM10392v1
I
D
(A)
Tj=150°C
Tc=25°C
Single pulse
100
10µs
100µs
10
1ms
10ms
1
0.1
10
V
DS
(V)
0.1
1
100
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM10393v1
AM10394v1
I
D
(A)
I
D
(A)
V
DS
=30V
V
GS
=9, 10V
8V
250
250
200
225
200
175
150
125
100
75
7V
150
100
50
50
0
6V
25
0
5
3
4
20
25
V
DS
(V)
7
8
9
V
GS
(V)
0
10
15
5
6
Figure 6. Gate charge vs gate-source voltage
Figure 7. Static drain-source on resistance
AM10395v1
AM10396v1
V
(V)
GS
R
DS(on)
(
Ω
)
V
DS
(V)
V
GS
=10V
V
DD
=520V
=42A
14
I
D
500
V
DS
0.026
12
400
300
200
10
8
0.024
0.022
0.020
6
4
100
0
2
0
70 80
50 60
20 30 40
10
100
200
0
50
150
Q
g
(nC)
0
I
D
(A)
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DocID022522 Rev 5
STW88N65M5, STWA88N65M5
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Output capacitance stored energy
AM10397v1
AM10398v1
E
(µJ)
oss
C
(pF)
40
100000
10000
35
30
Ciss
25
20
1000
100
Coss
Crss
15
10
10
1
5
0
0
0.1
100
200
400 500
600
1
10
V
DS
(V)
100
300
V
DS
(V)
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on-resistance vs
temperature
AM04972v1
AM05501v2
V
GS(th)
R
DS(on)
(norm)
(norm)
1.10
I
D
=250µA
2.1
I
D
= 42 A
1.9
1.7
V
GS
= 10 V
1.00
0.90
1.5
1.3
1.1
0.9
0.80
0.70
0.7
0.5
-50
-25
-50
-25
0
25 50 75
T
J
(°C)
0
25 50 75
T
J
(°C)
125
100
100
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized V
(BR)DSS
vs temperature
AM04974v1
AM10399v1
V
(V)
SD
V
(BR)DSS
(norm)
T
J
=-50°C
1.08
1.2
I
D
= 1mA
1.06
1.04
1.02
1.00
1.0
0.8
T
J
=25°C
0.6
0.4
T
J
=150°C
0.98
0.96
0.2
0
0.94
0.92
0
-50
-25
10
20
30
40
50 I
SD
(A)
0
25 50 75
T
J
(°C)
100
DocID022522 Rev 5
7/16
Electrical characteristics
STW88N65M5, STWA88N65M5
Figure 14. Switching losses vs gate
resistance
(1)
AM11171v1
E
(
μ
J)
Eon
V
DD
=400V
V
GS
=10V
T
J
=25°C
I
D
=56A
3000
2000
1000
0
Eoff
20
30
40
10
R
G
(
Ω
)
0
1. Eon
including reverse recovery of a SiC diode
8/16
DocID022522 Rev 5
STW88N65M5, STWA88N65M5
Test circuits
3
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
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(BR)DSS
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V
D
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I
D
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DD
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DD
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DocID022522 Rev 5
9/16
Package mechanical data
STW88N65M5, STWA88N65M5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/16
DocID022522 Rev 5
STW88N65M5, STWA88N65M5
Package mechanical data
Figure 21. TO-247 drawing
0075325_G
DocID022522 Rev 5
11/16
Package mechanical data
STW88N65M5, STWA88N65M5
Table 8. TO-247 mechanical data
mm.
Typ.
Dim.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
12/16
DocID022522 Rev 5
STW88N65M5, STWA88N65M5
Package mechanical data
Figure 22. TO-247 long leads drawing
7395426_G
DocID022522 Rev 5
13/16
Package mechanical data
STW88N65M5, STWA88N65M5
Table 9. TO-247 long leads mechanical data
mm
Dim.
Min.
Typ.
Max.
A
D
4.90
1.85
0.55
1.07
1.90
2.87
5.15
2.10
0.67
1.32
2.38
3.38
E
F
F1
F2
G
10.90 BSC
H
15.77
20.82
4.16
16.02
21.07
4.47
L
L1
L2
L3
L4
L5
M
5.49
5.74
20.05
3.68
20.30
3.93
6.04
6.29
2.25
2.55
V
10°
3°
V1
V3
Dia.
20°
3.55
3.66
14/16
DocID022522 Rev 5
STW88N65M5, STWA88N65M5
Revision history
5
Revision history
Table 10. Document revision history
Changes
Date
Revision
23-Nov-2011
09-Dec-2011
12-Jun-2012
1
2
3
First release.
Document status promoted from preliminary data to datasheet.
Updated title on the cover page.
Added new part number: STWA88N65M5
30-Nov-2012
16-Jul-2014
4
5
– Minor text changes
DocID022522 Rev 5
15/16
STW88N65M5, STWA88N65M5
IMPORTANT NOTICE – PLEASE READ CAREFUL
L
Y
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improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
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acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
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Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
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.
A
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
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