STMicroelectronics-STX616-AP
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STX616
High voltage NPN power transistor
Features
■
High voltage capability
■
High DC current gain
■
Minimum lot-to-lot spread for reliable operation
Applications
■
Switching mode power supply
■
Battery charger
TO-92
TO-92AP
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage withstand capability. The
device is designed for use in SMPS and battery
charger.
Figure 1.
Internal schematic diagram
T
a
ble 1.
Order code
STX616
Device summary
Marking
Package
Packaging
X616
X616
TO-92
Bulk
STX616-AP
TO-92AP
Ammopack
October 2007
Rev 2
1/8
8
Electrical characteristics
STX616 STX616-AP
1
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 2.
Symbol
Absolute maximum rating
Parameter
Value
Unit
V
Collector-emitter voltage (V
= 0)
980
500
V
V
CES
BE
V
Collector-emitter voltage (I
= 0)
CEO
B
V
Emitter-base voltage (I
= 0)
12
V
EBO
C
I
Collector current
1.5
A
C
I
Collector peak current (t
< 5ms)
2.4
A
CM
P
I
Base current
0.8
A
B
I
Base peak current (t
< 5ms)
1.2
A
BM
P
P
T
o
tal dissipation at T
= 25°C
2.8
W
°C
°C
tot
c
T
Storage temperature
-65 to 150
150
stg
T
Max. operating junction temperature
J
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
R
Thermal resistance junction-case
Thermal resistance junction-ambient
__
max
__
max
44.6
150
°C/W
°C/W
thj-case
R
thj-amb
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STX616 STX616-AP
Electrical characteristics
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min.
Typ. Max. Unit
V
V
= 980V
Collector cut-off current
50
µ
A
mA
CE
CE
I
CES
(V =0)
= 980V
T =
125°C
0.5
BE
c
Collector-emitter
sustaining voltage
(1)
I =
10mA
500
12
V
V
V
C
CE(sus)
(I =
0)
B
Emitter-base voltage
V
I =
1mA
EBO
E
(I =
0)
C
(1)
(1)
I =
0.2A
I =
40mA
0.5
1
V
V
C
B
V
V
Collector-emitter
saturation voltage
CE(sat)
I =
1A
I =
200mA
C
B
I =
0.2A
I =
40mA
1
V
V
C
B
Base-emitter saturation
voltage
BE(sat)
I =
1A
I =
200mA
1.4
C
B
I =
500
µ
A
V
= 2V
= 5V
17
25
12
4
C
CE
I =
200mA
V
CE
C
(1)
DC current gain
h
FE
I =
500mA
V
= 5V
= 5V
C
CE
I =
1.5A
V
CE
C
RESISTIVE LOAD
T
u
rn-on time
Storage time
Fall time
t
V
I
= 250V
I =
250mA
C
0.2
5
µ
s
µ
s
µ
s
on
CC
t
= 65mA
I
= -130mA
B2
s
B1
t
0.65
f
RESISTIVE LOAD
T
u
rn-on time
Storage time
Fall time
t
V
I
= 250V
I =
0.8A
C
1
µ
s
µ
s
µ
s
on
CC
t
= 160mA
I =
-0.4A
2.5
s
B1
B2
t
0.35
f
V =
300V
I =
250mA
C
INDUCTIVE LOAD
Storage time
Fall time
cl
t
I
= 65mA
I
= -130mA
B2
5
µ
s
µ
s
s
B1
t
L = 200
µ
H
0.5
f
V =
300V
I =
0.8A
C
INDUCTIVE LOAD
Storage time
Fall time
cl
t
I
= 160mA
I
= -0.4A
B2
2.5
µ
s
µ
s
s
B1
t
L = 200
µ
H
0.25
f
Note (1)
Pulsed duration = 300
µ
s, duty cycle
≤
1.5%
3/8
Package mechanical data
STX616 STX616-AP
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
4/8
STX616 STX616-AP
Package mechanical data
TO-92 BULK SHIPMENT MECHANICAL DATA
mm.
TYP
DIM.
MIN.
4.32
0.36
4.45
3.30
2.41
1.14
12.70
2.16
0.92
0.41
MAX.
4.95
0.51
4.95
3.94
2.67
1.40
15.49
2.41
1.52
0.56
A
b
D
E
e
e1
L
R
S1
W
V
5
O
0102782 C
5/8
Package mechanical data
STX616 STX616-AP
TO-92 AMMOPACK SHIPMENT (Suffix”-AP”) MECHANICAL DATA
mm.
TYP
DIM.
MIN.
MAX.
4.80
A1
T
3.80
T1
1.60
T2
2.30
d
0.48
P0
12.50
5.65
12.70
6.35
2.54
12.90
7.05
P2
F1,F2
delta H
W
2.44
2.94
-2.00
17.50
5.70
2.00
18.00
6.00
9.00
19.00
6.30
W0
W1
W2
H
8.50
9.25
0.50
18.50
15.50
20.50
16.50
25.00
4.20
H0
H1
D0
t
16.00
4.00
3.80
0.90
L
11.00
I1
3.00
delta P
-1.00
1.00
6/8
STX616 STX616-AP
Revision history
4
Revision history
Table 5.
Date
Document revision history
Revision
Changes
06-Jun-2007
22-Oct-2007
1
2
Initial release.
Added TO-92AP package.
7/8
STX616 STX616-AP
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