STMicroelectronics-STY60NM50
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STY60NM50
N-CHANNEL 500V – 0.045
Ω
– 60A Max247
Zener-Protected MDmesh™Power MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STY60NM50
500V
< 0.05
Ω
60 A
TYPICAL R
(on) = 0.045
Ω
DS
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL
3
2
1
Max247
INDUSTRY’S LOWEST ON-RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
500
Unit
V
V
DS
Drain-source Voltage (V
= 0)
GS
V
Drain-gate Voltage (R
= 20 k
Ω
)
500
V
DGR
GS
V
Gate- source Voltage
±30
V
GS
I
Drain Current (continuous) at T
= 25°C
60
A
D
C
I
Drain Current (continuous) at T
= 100°C
37.8
240
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T
= 25°C
560
W
C
V
Gate source ESD(HBM-C=100p
F
,
R
=15K
Ω)
Derating Factor
6
KV
W/°C
V/ns
°C
°C
ESD(G-S)
4.5
dv/dt (1)
Peak Diode Recovery voltage slope
Storage
T
e
mperature
15
T
stg
–65 to 150
150
T
Max. Operating Junction
T
e
mperature
j
(•)Pulse width limited by safe operating area
November 2003
(1)I
≤
60A, di/dt
≤
400A/µs, V
≤
V
, T
≤
T
j JMAX
SD
DD
(BR)DSS
1/8
STY60NM50
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
0.22
30
°C/W
°C/W
°C
T
Maximum Lead
T
emperature For Soldering Purpose
300
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
30
A
(pulse width limited by T
max)
j
E
Single Pulse Avalanche Energy
1.4
J
AS
(starting T
= 25 °C, I
= I
, V
= 35 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
T
y
p.
Max.
Unit
V
I
= 250 µA, V
= 0
500
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
DS
10
µA
µA
µA
DSS
Drain Current (V
= 0)
GS
= Max Rating, T
= 125 °C
100
± 10
DS
GS
C
I
Gate-body Leakage
= ± 20V
GSS
Current (V
= 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
T
y
p.
4
Max.
5
Unit
V
V
R
V
V
= V
, I
= 250µA
Gate Threshold Voltage
3
GS(th)
DS
GS
GS
D
Static Drain-source On
Resistance
= 10
V
, I
=
3
0A
0.045
0.05
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
T
y
p.
Max.
Unit
g
(1)
Forward Transconductance
V
> I
x R
DS(on)max,
35
S
fs
DS
D(on)
I
= 30A
D
C
C
V
= 25V, f = 1 MHz, V
= 0
DS GS
Input Capacitance
Output Capacitance
7500
980
pF
pF
pF
iss
oss
C
rss
Reverse Transfer
Capacitance
200
R
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
T
e
st Signal Level = 20mV
Open Drain
1.5
Ω
G
Note: 1. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5 %.
2/8
STY60NM50
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 250
V
, I
= 30A
Turn-on Delay Time
51
ns
d(on)
DD
D
= 4.7
Ω
V =
10V
G
GS
t
Rise Time
58
ns
r
(see test circuit, Figure 3)
Q
V
V
= 400
V
, I
= 60A,
= 10V
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
190
53
266
nC
nC
nC
g
DD
D
GS
Q
gs
Q
97
gd
SWITCHING OFF
Symbol
Parameter
Off-voltage Rise Time
Fall Time
Test Conditions
Min.
Typ.
51
Max.
Unit
ns
t
V
R
= 400
V
, I
= 60A,
r(Voff)
DD
D
= 4.7
Ω,
V =
10V
GS
(see test circuit, Figure 5)
G
t
46
ns
f
t
Cross-over Time
108
ns
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
60
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
240
1.5
A
SDM
V
I
I
= 60A, V
= 0
V
SD
SD
GS
t
Q
= 60A, di/dt = 100A/µs,
= 100
V
, T
=
2
5°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
532
9.9
37
ns
µC
A
rr
SD
V
DD
rr
j
I
(see test circuit, Figure 5)
RRM
t
Q
I
= 60A, di/dt = 100A/µs,
= 100
V
, T
=
1
50°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
636
13.4
42
ns
µC
A
rr
SD
V
DD
rr
j
I
(see test circuit, Figure 5)
RRM
Note: 1. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse
width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/8
STY60NM50
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STY60NM50
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STY60NM50
Fig. 1:
Unclamped Inductive Load Test Circuit
Fig. 2:
Unclamped Inductive Waveform
Fig. 3:
Switching Times Test Circuit For
Fig. 4:
Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STY60NM50
Max247 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.70
2.20
1.00
2.00
3.00
0.40
19.70
5.35
15.30
14.20
3.70
TYP.
MAX.
5.30
2.60
1.40
2.40
3.40
0.80
20.30
5.55
15.90
15.20
4.30
MIN.
MAX.
A
A1
b
b1
b2
c
D
e
E
L
L1
P025Q
7/8
STY60NM50
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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