STMicroelectronics-STY60NM60
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STY60NM60
N-CHANNEL 600V – 0.050
Ω
– 60A Max247
Zener-Protected MDmesh™Power MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STY60NM60
600V
< 0.055
Ω
60 A
TYPICAL R
(on) = 0.050
Ω
DS
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE
CHARGE
3
2
1
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL
INDUSTRY’S LOWEST ON-RESISTANCE
Max247
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
Max247
P
A
CKAGING
STY60NM60
Y60NM60
TUBE
July 2003
1/8
STY60NM60
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
600
Unit
V
V
DS
Drain-source Voltage (V
= 0)
GS
V
Drain-gate Voltage (R
= 20 k
Ω
)
600
V
DGR
GS
V
Gate- source Voltage
±30
V
GS
I
Drain Current (continuous) at T
= 25°C
60
A
D
C
I
Drain Current (continuous) at T
= 100°C
37.8
240
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T
= 25°C
560
W
C
V
Gate source ESD(HBM-C=100p
F
,
R
=15K
Ω)
Derating Factor
6
KV
W/°C
V/ns
°C
°C
ESD(G-S)
4.5
dv/dt (1)
Peak Diode Recovery voltage slope
Storage
T
e
mperature
15
T
stg
–65 to 150
150
T
Max. Operating Junction
T
e
mperature
j
(•)Pulse width limited by safe operating area
(1) I
≤
60A, di/dt
≤
400 A/µs, V
≤
V
, T
≤
T
j JMAX.
SD
DD
(BR)DSS
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
0.22
30
°C/W
°C/W
°C
T
Maximum Lead
T
emperature For Soldering Purpose
300
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
30
A
(pulse width limited by T
max)
j
E
Single Pulse Avalanche Energy
1.4
J
AS
(starting T
= 25 °C, I
= I
, V
= 35 V)
j
D
AR
DD
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
T
y
p.
Max.
Unit
Gate-Source Breakdown
Voltage
30
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/8
STY60NM60
ELECTRICAL CHARACTERISTICS
(T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
T
y
p.
Max.
Unit
V
I
= 250 µA, V
= 0
600
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
DS
10
µA
µA
µA
DSS
Drain Current (V
= 0)
GS
= Max Rating, T
= 125°C
100
±10
DS
GS
C
I
Gate-body Leakage
= ± 20V
GSS
Current (V
= 0)
DS
V
V
V
= V
, I
= 250 µA
5
V
Gate Threshold Voltage
3
4
GS(th)
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10 V, I
= 30 A
0.050
0.055
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
T
y
p.
Max.
Unit
g
(1)
Forward Transconductance
V
= I
x R
DS(on)max,
35
S
fs
DS
D(on)
I
= 30 A
D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25
V
, f = 1
M
Hz, V
= 0
7300
2000
40
pF
pF
pF
iss
DS
GS
C
oss
C
rss
R
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
T
e
st Signal Level = 20mV
Open Drain
1.8
Ω
G
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
R
= 300
V
, I
= 30 A
= 4.7
Ω
V =
10 V
GS
55
95
ns
ns
d(on)
DD
D
t
r
G
(see test circuit, Figure 3)
Q
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
= 470
V
, I
= 60 A,
= 10 V
178
44.5
95
266
nC
nC
nC
g
DD
GS
D
Q
gs
gd
Q
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400 V, I
= 60 A,
130
76
105
ns
ns
ns
r(Voff)
D
t
f
R =
4.7
Ω,
V =
10 V
G GS
(see test circuit, Figure 5)
t
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
SD
(2)
I
SDM
V
(1)
I
I
= 60 A, V
= 0
Forward On Voltage
1.5
V
SD
SD
SD
GS
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 60 A, di/dt = 100 A/µs,
= 30 V, T
= 150°C
600
14
48
ns
µC
A
rr
Q
V
DD
rr
RRM
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse
width limited by safe operating area.
3/8
STY60NM60
Safe Operating Area
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/8
STY60NM60
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
5/8
STY60NM60
Fig. 1:
Unclamped Inductive Load Test Circuit
Fig. 2:
Unclamped Inductive Waveform
Fig. 3:
Switching Times Test Circuit For
Fig. 4:
Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STY60NM60
Max247 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.70
2.20
1.00
2.00
3.00
0.40
19.70
5.35
15.30
14.20
3.70
TYP.
MAX.
5.30
2.60
1.40
2.40
3.40
0.80
20.30
5.55
15.90
15.20
4.30
MIN.
MAX.
A
A1
b
b1
b2
c
D
e
E
L
L1
P025Q
7/8
STY60NM60
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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