STMicroelectronics-T1210T-8T
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T1210T-8T
Datasheet
12 A 800 V logic level Triac in TO-220AB package
Features
A2
A1
•
•
•
Medium current Triac
Three quadrants
ECOPACK2
compliant
G
Applications
•
•
•
•
•
•
General purpose AC line load switching
A2
Motor control circuits
Small home appliances
Lighting
Inrush current limiting circuits
Overvoltage crowbar protection
G
A2
A1
Description
TO-220AB
phase angle control function in general purpose AC switching.
This device can be directly driven by a microcontroller due to its 10 mA gate current
requirement.
Product status link
Product summary
Order code
Package
T1210T-8T
TO-220AB
12 A
I
T(RMS)
V
/V
800 V
900 V
10 mA
DRM RRM
V
/V
DSM RSM
I
GT
DS10320
–
Rev 2
–
September 2019
For further information contact your local STMicroelectronics sales office.
T1210T-8T
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (limiting values)
Parameter
Symbol
Value
12
Unit
I
T =
131 °C
On-state RMS current (full sine wave)
A
T(RMS)
c
F = 50 Hz
t = 20 ms
F = 60 Hz
t = 16.7 ms
90
I
Non repetitive surge peak on-state current (T
initial = 25 °C)
A
TSM
j
95
2
2
2
t =
10 ms
p
I t
value for fusing, (T
initial = 25 °C)
54
I t
A s
j
T =
150 °C
600
800
900
j
V
/V
Repetitive surge peak off-state voltage
V
DRM RRM
T =
125 °C
j
V
/V
t =
10 ms
p
Non repetitive surge peak off-state voltage
Critical rate of rise of on-state current
V
DSM RSM
dl/dt
F = 100 Hz
100
A/µs
I
G
= 2 x I
, tr ≤ 100 ns
GT
I
t =
20 µs
T =
150 °C
Peak gate current
4
1
A
GM
p
j
P
G(AV)
T =
150 °C
j
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum lead temperature soldering during 10 s
W
T
-40 to +150
-40 to +150
260
°C
°C
°C
stg
T
j
T
L
Table 2.
Electrical characteristics (T
j
= 25 °C unless otherwise specified)
Test conditions
Symbol
Value
0.5
Unit
Min.
V
= 12
V
, R
=
3
0 Ω
I
I – II – III
mA
D
L
GT
Max.
Max.
Min.
10
V
V
V
= 12 V, R
= 30 Ω
I – II – III
I – II – III
1.3
V
V
GT
D
L
V
= V
, R
= 3.3 kΩ , T
= 150 °C
DRM L
j
0.2
GD
D
I =
500 mA
I
Max.
15
20
mA
T
H
I – III
II
I
I =
1.2 x I
G GT
Max.
Min.
mA
L
25
V
V
= V
= 536
V
,
g
ate open
T =
125 °C
j
250
D
R
V/µs
= V
= 402
V
,
g
ate open
T =
150 °C
j
170
11.7
8.2
D
R
T =
125 °C
j
(dV/dt)c = 0.1 V/μs
(dV/dt)c = 10 V/μs
T =
150 °C
j
Min.
A/ms
T =
125 °C
j
6.0
T =
150 °C
j
2.7
1. For
both polarities of A2 referenced to A1
DS10320
–
Rev 2
page 2/11
T1210T-8T
Characteristics
Table 3.
Static characteristics
Test conditions
Symbol
Value
Unit
V
I
= 17 A, t
= 380 µs
T =
25 °C
Max.
Max.
Max.
1.55
0.85
37
TM
p
j
T
V
V
T =
150 °C
j
Threshold voltage
Dynamic resistance
TO
R
T =
150 °C
j
mΩ
µA
d
T =
25 °C
7.5
1.0
2.7
j
V
= V
= 800 V
Max.
Max.
D
R
I
, I
T =
125 °C
j
DRM RRM
mA
V
D
= V
= 600 V
T =
150 °C
j
R
1. For
both polarities of A2 referenced to A1
Table 4.
Thermal parameters
Parameter
Symbol
Value
Unit
R
Junction to case (AC)
Junction to ambient
1.3
60
°C/W
°C/W
th(j-c)
th(j-a)
R
DS10320
–
Rev 2
page 3/11
T1210T-8T
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1.
Maximum power dissipation versus on-state
RMS current
Figure 2.
On-state RMS current versus case temperature
I
(A)
T
(RMS)
P(W)
16
14
12
10
8
α = 180°
α = 180°
14
12
10
8
6
6
4
180 °
4
2
2
α
T (°C)
c
α
I
(A)
T
(RMS)
0
0
25
50
75
100
125
150
0
0
2
4
6
8
10
12
Figure 3.
On-state RMS current versus ambient
temperature (free air convection)
Figure 4.
Relative variation of thermal impedance versus
pulse duration
K = [Z
/ R
]
I
(A)
T
(RMS)
th th
1.0E+00
1.0E-01
1.0E-02
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Z
th(j-c)
Z
th(j-a)
T (°C)
a
t (s)
P
0
25
50
75
100
125
150
1.0E-03 1.0E-02 1.0E-01 1.0E+00
1.0E+01 1.0E+02 1.0E+03 1.0E+04
Figure 6.
Relative variation of holding current and
latching current versus junction temperature (typical
values)
Figure 5.
Relative variation of gate trigger voltage and
current versus junction temperature (typical values)
I
V
[ T
] / I
j
V
[ T
= 25 °C]
j
G
T
,
G
T
G
T
,
G
T
I
I
[ T
] / I
j
I
[ T
= 25 °C]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
H, L
H, L
j
2.0
1.5
1.0
0.5
0.0
I
Q3
GT
I
Q1-Q2
GT
V
GT
I
L
T (°C)
j
I
T (°C)
H
j
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
DS10320
–
Rev 2
page 4/11
T1210T-8T
Characteristics (curves)
Figure 8.
Non repetitive surge peak on-state current for a
sinusoidal pulse with width tp < 10 ms
Figure 7.
Surge peak on-state current versus number of
cycles
I
(A)
TSM
100
90
80
70
60
50
40
30
20
10
0
I
(A)
TSM
1000
100
10
Non repetitive T
initial = 25 °C
T initial
= 25 °C
j
j
20 ms
dl/dt limitation: 100 A/µs
One cycle
I
TSM
Repetitive T
= 131 °C
c
Number of cycles
100
T (ms)
p
1
10
1000
0.01
0.10
1.00
10.00
Figure 10.
Relative variation of critical rate of decrease of
main voltage versus junction temperature
Figure 9.
On-state characteristics (maximum values)
I
TM
(A)
100
(dI/dt)
[Tj] /
(dI/dt)
[Tj = 150 °C]
c
c
8
7
(dV/dt) =
10 V/µs
c
T max:
j
6
5
V
R
= 0.85 V
to
= 37 mΩ
d
10
4
3
2
T =
150 °C
j
T =
25 °C
V
(V)
TM
j
1
0
T (°C)
j
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
75
125
100
150
50
25
Figure 11.
Relative variation of static dV/dt immunity
versus junction temperature (maximum values)
Figure 12.
Relative variation of critical rate of decrease of
main current versus reapplied dV/dt (typical values)
dV/dt
[T ] /
dV/dt
[T = 150 °C]
j
j
(dI/dt)
[
(dV/dt)
] / specified
(dI/dt)
5
4
3
2
1
0
c
c
c
V
V
= V
= 402 V; 150 (°C)
R
3
2
1
0
D
D
= V
= 536 V; 125 (°C)
R
T =
150 (°C)
j
T =
125 (°C)
j
T (°C)
j
(dV/dt) (V/µs)
c
25
50
75
100
125
150
0.1
1.0
10.0
100.0
DS10320
–
Rev 2
page 5/11
T1210T-8T
Characteristics (curves)
Figure 13.
Relative variation of leakage current versus junction temperature for different values of
blocking voltage
I
I
[ T
V
V
] / I
I
DRM, RRM
j; DRM, RRM
DRM, RRM
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
V
= V
= 800 V
DRM
RRM
V
= V
= 600 V
DRM
RRM
V
= V
= 400 V
DRM
RRM
[T =
125 °C; 800 V]
[T =
150 °C; 600 V]
j
j
T (°C)
j
25
50
75
100
125
150
DS10320
–
Rev 2
page 6/11
T1210T-8T
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
2.1
TO-220AB package information
•
•
•
Epoxy resin is halogen free and meets UL94 flammability standard, level V0
Lead-free plating package leads
Recommended torque: 0.4 to 0.6 N·m
Figure 14.
TO-220AB package outline
DS10320
–
Rev 2
page 7/11
T1210T-8T
TO-220AB package information
Table 5.
TO-220AB package mechanical data
Dimensions
Millimeters
Ref.
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
a1
a2
B
15.20
15.90
0.5984
0.6260
3.75
0.1476
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.73
2.65
1.14
1.14
15.80
14.00
10.40
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.88
2.95
1.70
1.70
16.80
0.5118
0.3937
0.0240
0.0484
0.1732
0.0193
0.0945
0.0945
0.2441
0.1469
0.1043
0.0449
0.0449
0.6220
0.5512
0.4094
0.0346
0.0520
0.1811
0.0276
0.1071
0.1063
0.2598
0.1528
0.1161
0.0669
0.0669
0.6614
b1
b2
C
c1
c2
e
F
I
L
I2
I3
I4
M
16.40
2.6
0.6457
0.1024
1. Inch
dimensions are for reference only.
DS10320
–
Rev 2
page 8/11
T1210T-8T
Ordering information
3
Ordering information
Figure 15.
Ordering information scheme
T 12 10 T
– 8
T
Triac
Current
12 =
12 A
Gate sensitivity
10 = 10 mA
Specific application
T = Increased (dI/dt) and dV/dt producing reduced I
TSM
Voltage
8 = 800 V
Package
T = TO-220AB
Table 6.
Ordering information
Order code
Marking
Package
Weight
Base qty.
Delivery mode
T1210T-8T
T1210T-8T
TO-220AB
2.0 g
50
Tube
DS10320
–
Rev 2
page 9/11
T1210T-8T
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DS10320
–
Rev 2
page 11/11
