STMicroelectronics-T1235T-8G
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T1235T-8G
12 A Snubberless™ Triac
Datasheet -production data
Description
Available in SMD, the T1235T-8G Triac can be
used for the on/off or phase angle control
function in general purpose AC switching where
high commutation capability is required. This
device can be used without a snubber RC circuit
when the limits defined are respected.
A2
A2
G
D²PAK package is UL94-V0 flammability resin
compliance.
A1
Package environmentally friendly Ecopack
®
2
graded (RoHS and Halogen Free compliance).
D²PAK
Snubberless™ is a trademark of
STMicroelectronics.
Features
Figure 1: Functional diagram
High static dV/dt
High dynamic turn
–
off commutation (dl/dt)c
150 °C maximum T
j
Three quadrants
A2
Surge capability V
DSM
, V
RSM
= 900 V
A2: Anode2
A1: Anode1
Benefits
High immunity to turn-on thanks to high
static dV/dt
G: Gate
G
Better turn-off in high temperature
environments thanks to (dI/dt)c
Increase of thermal margin due to extended
working T
j
up to 150 °C
Good thermal resistance due to
non-insulated tab
A1
Table 1: Device summary
Symbol
I
T(RMS)
Value
12
Unit
A
Applications
General purpose AC line load switching
V
DRM
/V
RRM
V
DSM
/V
RSM
I
GT
800
900
35
V
Motor control circuits
Home appliances
Heating
Lighting
Inrush current limiting circuits
Overvoltage crowbar protection
V
mA
December 2017
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This is information on a product in full production.
Characteristics
T1235T-8G
1
Characteristics
Table 2: Absolute maximum ratings (limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
T
c
= 124 °C
t
p
= 16.7 ms
t
p
= 20 ms
12
95
90
54
A
Non repetitive surge peak on-state current,
T
j
initial = 25 °C
I
TSM
A
I
2
t
I
2
t value for fusing
T
j
initial = 25 °C
A
2
s
Critical rate of rise of on-state current,
I
G
= 2 x I
GT
, tr ≤ 100 ns
dl/dt
f = 100 Hz
100
A/µs
T
j
= 150 °C
T
j
= 125 °C
t
p
= 10 ms
600
V
V
V
DRM
/V
RRM
Repetitive peak off-state voltage
800
V
DSM
/V
RSM
Non Repetitive peak off-state voltage
900
V
I
GM
P
G(AV)
T
stg
Peak gate current
t
p
= 20 µs
T
j
= 150 °C
T
j
= 150 °C
4
A
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
1
W
°C
°C
-40 to +150
-40 to +150
T
j
Table 3: Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol
Test
c
onditions
V
D
= 12 V, R
L
= 33 Ω
Quadrants; T
j
I – II – III
I – II – III
I – II – III
I – II – III
I – III
Value
1.75
35
Unit
mA
mA
V
Min.
Max.
Max.
Min.
Max.
Max.
Max.
Min.
Min.
Min.
Min.
I
GT
V
D
= 12 V, R
L
= 33 Ω
V
D
= 12 V, R
L
= 33 Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ, T
j
= 150 °C
I
G
= 1.2 x I
GT
V
GT
V
GD
1.3
0.2
60
V
mA
mA
mA
V/µs
V/µs
A/ms
A/ms
I
L
I
G
= 1.2 x I
GT
II
80
I
T
= 500 mA, gate open
V
D
= 536 V, gate open
V
D
= 402 V, gate open
40
T
j
= 125 °C
T
j
= 150 °C
T
j
= 125 °C
T
j
= 150 °C
2000
1000
12
Notes:
Without snubber, (dV/dt)c > 20 V/µs
6
(1)
For both polarities of A2 referenced to A1.
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T1235T-8G
Characteristics
Table 4: Static characteristics
Symbol
Test conditions
T
j
Value
1.6
Unit
V
I
T
= 17 A, t
p
= 380 µs
Threshold on-state voltage
Dynamic resistance
25 °C
150 °C
Max.
Max.
Max.
0.85
V
150 °C
25 °C
50
5
mΩ
µA
V
DRM
= V
RRM
= 800 V
V
DRM
= V
RRM
= 600 V
Max.
Max.
125°C
150 °C
1
mA
mA
I
DRM
/I
RRM
3.1
Notes:
(1)
For both polarities of A2 referenced to A1.
Table 5: Thermal resistance
Parameter
Symbol
Value
1.6
Unit
D²PAK
R
th(j-c)
Junction to case (AC)
Max.
°C/W
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Characteristics
T1235T-8G
1.1
Characteristics (curves)
Figure 3: On-state RMS current versus case
temperature
Figure 2: Maximum power dissipation versus on-
state RMS current
I (A)
T(RMS)
P(W)
18
16
12
8
α
= 180°
α
= 180°
16
14
12
10
8
6
4
4
180°
T
(°C)
c
2
0
I
(A)
T
(RMS)
0
25
50
75
100
125
150
0
0
2
4
6
8
10
12
Figure 4: On-state RMS current versus ambient
temperature (free air convection)
Figure 5: Relative variation of thermal impedance
versus pulse duration
I
(A)
T(RMS)
K = [Z
/R
]
th th
4.0
1.0E+00
1.0E-01
1.0E-02
α
= 180
D
2
PAK
Scu = 1 cm
2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Z
th(j-c)
Epoxy PCB FR4 copper thickness = 35 µm
t
(s)
p
T
(°C)
a
1.0E-03
1.0E-02
1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
0
25
50
75
100
125
150
Figure 6: Relative variation of gate trigger voltage
and current versus junction temperature
(typical values)
Figure 7: Relative variation of holding current and
latching current versus junction temperature
(typical values)
I
,V [T
] / I
,V [T
= 25 °C]
GT GT
GT GT
j j
I ,I [T
] / I
,I [T
= 25 °C]
H
L
j
H
L
j
2.0
2.0
1.5
1.0
0.5
0.0
I
Q1-Q2
GT
1.5
1.0
0.5
0.0
V
Q1-Q2-Q3
GT
I
L
I
Q3
GT
I
H
T (°C)
j
T (°C)
j
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
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T1235T-8G
Characteristics
Figure 9: Non repetitive surge peak on-state
Figure 8: Surge peak on-state current versus
current for a sinusoidal pulse with width tp < 10 ms
number of cycles
I
(A)
TSM
I
(A)
TSM
100
50
0
10000
T initial=25°C
j
dI/dt limitation:
100A/µs
t
=
20
m
s
O
n
e
c
y
c
l
e
Non repetitive
T
initial = 25 °C
j
1000
100
10
Repetitive
= 124°C
T
c
t
(ms)
p
Number of cycles
0.01
0.10
1.00
10.00
1
10
100
1000
Figure 11: Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 10: On-state characteristics
(maximum values)
(dl/dt)c [T ] / (dl/dt)c [T
j = 150 °C
]
j
I
(A)
TM
14
13
12
11
10
9
100
10
1
T
= 25 °C
j
T
= 150 °C
j
8
7
6
5
4
T
max.
= 0.85 V
3
j
V
R
to
2
T (°C)
j
= 50 m
Ω
d
V
(V)
TM
1
0
0
1
2
3
4
5
25
50
75
100
125
150
Figure 13: Relative variation of leakage current
Figure 12: Relative variation of static dV/dt
immunity versus junction temperature
versus junction temperature for different values of
blocking voltage
I
, I
at [T ] / I
, I
DRM RRM
at [T
]*
j max.
DRM RRM
j
dV/dt [T ] / dV/dt [T
j = 150 °C
]
j
1.0E+00
1.0E-01
1.0E-02
1.0E-03
6
5
4
3
2
1
0
V
D
= V
R
= 402 V
V
DRM
= V
RRM
= 800 V
V
DRM
= V
RRM
= 600 V
*[T max
= 125 °C; V
[T max
= 150 °C; V
, V
= 800 V]
, V
= 600 V]
DRM
R
RM
j
DRM
R
RM
T (°C)
j
j
T (°C)
j
25
50
75
100
125
150
25
50
75
100
125
150
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Package
information
T1235T-8G
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
ECOPACK
®
2
compliant
Lead-free package leads finishing
Molding compound resin is halogen-free and meets UL standard level V0
2.1
D²PAK package information
Figure 14: D²PAK package outline
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T1235T-8G
Package
information
Table 6: D²PAK package mechanical data
Dimensions
Ref.
Millimeters
Min.
4.30
2.49
0.03
Typ.
Max.
4.60
2.69
0.23
Min.
Typ.
Max.
A
A1
A2
A3
b
0.1693
0.0980
0.0012
0.1811
0.1059
0.0091
0.0098
0.25
0.70
1.25
0.45
1.21
8.95
7.50
1.30
2.54
10.00
8.30
6.85
4.88
15
0.93
1.7
0.0276
0.0492
0.0177
0.0476
0.3524
0.2953
0.0512
0.1
0.0366
0.0669
0.0236
0.0535
0.3681
0.3150
0.0669
b2
c
0.60
1.36
9.35
8.00
1.70
c2
D
D1
D2
e
E
10.28
8.70
7.25
5.28
15.85
2.28
1.40
1.75
0.3937
0.3268
0.2697
0.1921
0.5906
0.0701
0.0500
0.0551
0.4047
0.3425
0.2854
0.2079
0.6240
0.0898
0.0551
0.0689
E1
E2
G
H
L
1.78
1.27
1.40
L2
L3
R
0.0157
0.40
V2
0°
8°
0°
8°
Notes:
(1)
Dimensions in inches are given for reference only
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Package
information
T1235T-8G
Figure 15: D²PAK recommended footprint (dimensions are in mm)
Figure 16: D²PAK stencil definitions (dimensions are in mm)
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T1235T-8G
Ordering
information
3
Ordering information
Figure 17: Ordering information scheme
T 12
35 T
–
8
G – TR
Snubberless
™
TRIAC
RMS current
12 = 12 A
I
current
GT
35 = 35 mA
Specific application
T = increased (dl/dt) and dV/dt producing reduced I
TSM
Voltage
8 = 800 V
Package
G = D²PAK
Packing
Blank = Tube
-TR =
T
a
pe and reel
Table 7: Ordering information
Order code
T1235T-8G-TR
T1235T-8G
Marking
Package
Weight
Base qty.
1000
Delivery mode
Tape and reel
Tube
T1235T-8G
D²PAK
1.38 g
50
4
Revision history
Table 8: Document revision history
Date
Revision Changes
19-Dec-2017
1
Initial release.
DocID031279 Rev 1
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T1235T-8G
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s
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
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