STMicroelectronics-T1610T-8I
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T1610
T
–
8I
Logic level 16 A
T
r
iac
Datasheet
−
production data
Features
A2
■
High static and dynamic commutation
■
Three quadrants
G
A1
■
Logic level (direct microcontroller driven)
■
Package is RoHS (2002/95/EC) compliant
■
Tab insulated, voltage = 2500 V rms
■
UL certified (ref. file E81734)
A1
A2
G
Applications
TO-220AB insulated
(T1610
T
–
8l)
■
General purpose AC line load switching
■
Home appliances:
– Fan
Table 1.
Order code
T1610
T
–
8I
Device summary
– Pump
Quadrants
Value I
GT
(mA)
– Solenoid
I – II – III
10
■
Lighting
■
Heaters
■
Inrush current limiting circuits
■
Overvoltage crowbar protection circuits
Description
Available in TO220AB-Insulated (ceramic
insulated), the T1610
T
–
8I series of
T
r
iac can be
used in an on/off or phase angle control function
in general purpose AC switching.
T1610
T
–
8I can be directly driven through a
microcontroller allowing usage of small capacitive
or resistive power supplies.
Provides insulation rated at 2500 V rms
(TO-220AB insulated package).
April 2012
Doc ID 018766 Rev 3
1/10
This is information on a product in full production.
10
Characteristics
T1610T-8I
1
Characteristics
Table 2.
Symbol
Absolute maximum rating (T
= 25 °C, unless otherwise specified)
j
Parameter
Value
Unit
T
c
= 108 °C
16
12
I
T(RMS)
On-state rms current (full sine wave)
A
T
c
= 119 °C
t = 20 ms
F = 50 Hz
F = 60 Hz
120
126
95
Non repetitive surge peak on-state current (full
cycle, T
j
initial = 25 °C)
I
TSM
A
t = 16.7 ms
t
p
= 10 ms
T
j
= 150 °C
T
j
= 125 °C
²
²
²
I t
I t Value for fusing
A s
600
800
V
DRM
V
RRM
,
Repetitive peak off-state voltage, gate open
V
V
V
DSM
V
RSM
,
Non repetitive surge peak
off-state voltage
t
p
= 10 ms
T
j
= 25 °C
900
dI/dt
I
GM
Critical rate of rise of on-state current I
G
= 2 x I
GT
Peak gate current
F = 100 Hz
t
p
= 20 µs
100
4
A/µs
A
P
G(AV)
Average gate power dissipation
1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
-40 to +150
-40 to +150
°C
Lead temperature for soldering during 10 s
(at 4 mm from case for TO220AB-ins.)
T
L
260
°C
V
V
ins
(rms) Insulation
rms voltage, 1 minute, TO220AB ceramic insulated
2500
2/10
Doc ID 018766 Rev 3
T1610T-8I
Characteristics
Table 3.
Symbol
Electrical characteristics (T
= 25 °C, unless otherwise specified)
j
Test conditions
Quadrant
Value
Unit
I – II – III
I – II – III
MIN.
0.5
10
mA
mA
(1)
I
GT
V
D
= 12
V
,
R
L
= 30
Ω
MAX.
V
GT
V
GD
VD = 12
V
,
R
L = 30
Ω
All
All
MAX.
1.3
V
V
D
= 800
V
,
R
L
= 3.3 k
Ω,
T
j
= 125 °C
MIN.
0.2
25
20
30
100
50
9
V
(1)
I
H
I
T
= 500 mA
MAX.
mA
I – III
II
I
L
I
G
= 1.2 I
GT
MAX.
MIN.
mA
V
D
= 67% x 800 V gate open
V
D
= 67% x 600 V gate open
(dV/dt)c = 0.1 V/µs
T
j
= 125 °C
T
j
= 150 °C
T
j
= 125 °C
dV/dt
(1)
V/µs
T
j
= 125 °C
T
j
= 150 °C
T
j
= 150 °C
(dV/dt)c = 10 V/µs
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
3
(dl/dt)c
(1)
MIN.
TY
P
.
A/ms
µs
5.4
1.8
gate controlled turn on time I
TM
= 13 A, V
D
= 400
V
,
t
GT
I – II – III
2
I
G
= 100 mA, dI
G
/dt = 100 mA/µs, R
L
= 30
Ω
1. For
both polarities of A2 referenced to A1
Table 4.
Symbol
Static characteristics
Test conditions
Value
Unit
(1)
V
TM
I
TM
= 22.6 A, t
p
= 380 µs
Threshold voltage
T
j
= 25 °C
MAX.
1.55
0.85
30
V
V
(1)
V
to
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
MAX.
MAX.
(1)
R
d
Dynamic resistance
m
Ω
µA
5
V
DRM
= V
RRM
= 800 V
V
DRM
= V
RRM
= 600 V
I
DRM
I
RRM
T
j
= 125 °C
T
j
= 150 °C
MAX.
1
mA
3.6
1. for
both polarities of A2 referenced to A1
Table 5.
Symbol
Thermal resistance
Parameter
Value
Unit
R
th(j-c)
Junction to case (AC)
R
th(j-a)
Junction to ambient
2.1
60
°C/W
°C/W
Doc ID 018766 Rev 3
3/10
Characteristics
T1610T-8I
Figure 1.
Maximum power dissipation versus
Figure 2.
On-state rms current versus case
on-state rms current (full cycle)
temperature (full cycle)
I
T(RMS)
(A)
P(W)
20
18
16
14
12
10
8
180°
18
16
14
12
10
8
6
6
4
4
2
2
I
T(RMS)
(A)
T
C
(°C)
0
0
0
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
Figure 3.
On-state rms current versus
ambient temperature
Figure 4.
Relative variation of thermal
impedance versus pulse duration
(free air convection)
I
T(RMS)
(A)
K = [Z
th
/ R
th
]
3.0
2.5
2.0
1.5
1.0
0.5
1.0E+00
1.0E-01
1.0E-02
Z
th(j-c)
Z
th(j-a)
T
a
(°C)
75
T
p
(s)
0.0
0
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
1.0E+02 1.0E+03 1.0E+04
25
50
100
125
150
Figure 5.
On-state characteristics
(maximum values)
Figure 6.
Surge peak on-state current versus
number of cycles
I
TM
(A)
I
TSM
(A)
130
120
110
100
90
1000
T
j
max:
V
to
= 0.85 V
R
d
= 30 m
Ω
t = 20 ms
One cycle
100
10
1
80
Non repetitive
T
j
initial = 25 °C
70
60
T
j
= 150 °C
50
Repetitive
T
c
= 108 °C
40
30
T
j
= 25 °C
20
10
V
TM
(V)
Number of cycles
100 1000
0
0
1
2
3
4
5
1
10
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Doc ID 018766 Rev 3
T1610T-8I
Figure 7.
Characteristics
Non repetitive surge peak on-state
Figure 8.
current and corresponding values
of I t
Relative variation of gate trigger
current versus junction
temperature (typical values)
2
I
TSM
(A), I²t (A²s)
I
GT
[T
j
]/I
GT
[T
j
= 25 °C]
10000
2.0
typical values
T
j
initial = 25 °C
I
GT
Q3
1.5
1000
100
10
I
TSM
I
GT
Q1-Q2
1.0
dl /dt limitation: 100 A / µs
I²t
0.5
Sinusoidal pulse width t
p
<10 ms
t
p
(ms)
10.00
T
j
(°C)
0.0
0.01
0.10
1.00
-50 -30 -10 10
30 50 70 90 110
130 150
Figure 9.
Relative variation of gate trigger
voltage versus junction
temperature (typical values)
Figure 10.
Relative variation of holding
current and latching current versus
junction temperature
I
H
, I
L
[T
j
] / I
H
, I
L
[T
j
= 25 °C]
2.0
V
GT
[T
j
] / V
GT
[T
j
= 25 °C]
2.0
1.5
1.0
0.5
0.0
typical values
1.5
1.0
V
GT
I
L
0.5
I
H
T
j
(°C)
T
j
(°C)
-50 -30 -10 10
30 50 70 90 110
130 150
0.0
-50 -30 -10 10
30 50 70 90 110
130 150
Figure 11.
Relative variation of critical rate of
Figure 12.
Relative variation of critical rate of
decrease of current (dI/dt)c versus
reapplied (dV/dt)c
decrease of current (dI/dt)c versus
junction temperature
(dl / dt)c [T
j
] / (dl / dt)c [T
j
= 150 °C]
(dI/dt)c[(dV/dt)c]/Specified(dI/dt)c[(dV/dt)
c
10 V/µs]
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
typical values
typical values
logic level
(dV/dt)c (V/µs)
10.0 100.0
T
j
(°C)
0.1
1.0
25
50
75
100
125
150
Doc ID 018766 Rev 3
5/10
Characteristics
T1610T-8I
Figure 13.
Relative variation of static dV/dt
immunity versus junction
temperature
Figure 14.
Relative variation of static dV/dt
immunity versus junction
temperature
dV / dt [T
j
] / dV / dt [T
j
= 125 °C]
4
dV / dt [T
j
] / dV / dt [T
j
= 150 °C]
7
6
5
4
3
2
1
0
V
D
= V
R
= 402 V
V
D
= V
R
= 536 V
3
2
1
T
j
(°C)
T
j
(°C)
125
0
25
25
50
75
100
125
150
50
75
100
Figure 15.
Relative variation of leakage current versus junction temperature for different values
of blocking voltage
I
DRM
/I
RRM
[T
j
;
V
DRM
/ V
RRM
] / I
DRM
/I
RRM
1.0E+00
V
DRM
= V
RRM
= 800 V
V
DRM
= V
RRM
= 600 V
1.0E-01
1.0E-02
[T
j
= 125 °C; 800 V];
[T
j
= 150 °C; 600 V]
1.0E-03
V
DRM
= V
RRM
= 400 V
T
j
(°C)
1.0E-04
25
50
75
100
125
150
6/10
Doc ID 018766 Rev 3
T1610T-8I
Package information
2
Package information
■
■
Epoxy meets UL94, V0
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
®
ECO
P
A
CK is
an ST trademark.
Table 6.
TO-220AB insulated dimensions
Dimensions
Millimeters
Min. Typ. Max. Min. Typ. Max.
Ref.
Inches
A
15.20
15.90 0.598
0.625
a1
3.75
0.147
C
B
a2 13.00
10.00
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
Ø I
b2
B
L
F
b1 0.61
b2 1.23
A
I4
C
4.40
l3
c1 0.49
c2 2.40
c2
a1
l2
a2
e
F
2.40
6.20
M
c1
b1
ØI 3.75
e
I4 15.80
16.40 16.80 0.622 0.646 0.661
L
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
l2
l3
M
2.60
0.102
Doc ID 018766 Rev 3
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Ordering information scheme
T1610T-8I
3
Ordering information scheme
Figure 16.
Ordering information scheme
16
T
10
T
8
I
–
Triac series
Current
16 = 16 Ampere
Sensitivity
10 = 10 mA
Specific application
Voltage
8 = 800 V
Package
I = TO220AB-insulated
8/10
Doc ID 018766 Rev 3
T1610T-8I
Ordering information
4
Ordering information
Table 7.
Ordering information
Order code
Marking
Package
Weight Base
qty Delivery
mode
TO-220AB
insulated
T1610
T
–
8I
T1610
T
–
8I
2.3
50
T
u
be
5
Revision history
Table 8.
Date
Document revision history
Revision
Changes
08-Aug-2011
20-Jan-2012
25-Apr-2012
1
2
3
First issue.
Corrected subscripting error in
T
a
ble 3
.
Updated UL certification.
Doc ID 018766 Rev 3
9/10
T1610T-8I
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10/10
Doc ID 018766 Rev 3
