STMicroelectronics-T2035H-8T
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T2035H-8T
Datasheet
20 A – 800 V – 150 °C 8H Triac in TO-220AB
Features
A2
A1
•
•
•
•
•
•
•
20 A high current Triac
800 V symmetrical blocking voltage
150 °C maximum junction temperature T
j
Three triggering quadrants
G
High noise immunity – static dV / dt
Robust dynamic turn-off commutation – (dl/dt)c
ECOPACK2
compliant component
A2
Applications
•
•
•
•
•
•
Home automation Smart AC plug
G
Water heater, room heater and coffee machine
AC Induction and Universal Motor control
Inrush current limiter in AC DC rectifiers
Lighting and automation I/O control
A2
A1
TO-220AB
General purpose AC line load control
Description
in TO-220AB provides an enhanced thermal management: this 20 A Triac is the
right choice for a compact drive of heavy AC loads and enables the heatsink size
reduction.
Product status link
Based on the ST Snubberless high temperature technology, it offers higher specified
turn off commutation and noise immunity levels up to the T
j
max.
Product summary
and inductive loads for industrial control and home appliances.
I
20 A
T(RMS)
V
/V
800 V
900 V
35 mA
150 °C
DRM RRM
V
/V
DSM RSM
I
GT
T max.
j
DS13158
–
Rev 3
–
December 2020
For further information contact your local STMicroelectronics sales office.
T2035H-8T
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (limiting values)
Parameter
Symbol
Value
20
Unit
I
T =
128 °C
RMS on-state current (full sine wave)
A
T(RMS)
c
t = 16.7 ms
t = 20 ms
210
200
264
Non repetitive surge peak on-state current (full cycle,
T initial
= 25 °C)
j
I
A
TSM
2
2
2
t =
10 ms
p
I t
I t
value for fusing
A s
Critical rate of rise of on-state current, I
= 2 x I
, tr
≤ 100 ns, f = 100 Hz
G
GT
T =
25 °C
dl/dt
/V
100
A/µs
j
V
Repetitive peak off-state voltage
Non Repetitive peak off-state voltage
Peak gate current
800
V
V
DRM RRM
V
/V
t =
10 ms, T
= 25 °C
p
900
DSM RSM
j
I
4
A
GM
t =
20 µs, T
= 150 °C
p
j
P
Maximum gate power dissipation
Average gate power dissipation
Storage temperature range
Operating junction temperature range
5
1
W
W
°C
°C
°C
GM
P
T =
150 °C
j
G(AV)
T
-40 to +150
-40 to +150
260
stg
T
j
T
Maximum lead temperature for soldering during 10 s
L
Table 2.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrants
I – II – III
Value
5
Unit
mA
mA
V
V
V
V
V
= 12
V
, R
=
3
0 Ω
Min.
Max.
Max.
D
D
D
D
L
I
GT
= 12 V, R
= 30 Ω
I – II – III
35
L
V
V
= 12 V, R
= 30 Ω
I – II – III
1.3
GT
L
= V
, R
= 3.3 kΩ
T =
150 °C
j
I – II – III
I – III
II
Min.
Max.
Max.
Max.
0.15
50
V
GD
DRM
L
mA
mA
mA
I
I =
1.2 x I
G GT
L
80
I =
500 mA, gate open
I
35
T
H
V
= 536
V
,
g
ate open
T =
150 °C
Min.
Min.
2000
20
V/µs
D
j
T =
150 °C
j
Without snubber network
A/ms
1. For
both polarities of A2 referenced to A1.
DS13158
–
Rev 3
page 2/11
T2035H-8T
Characteristics
Table 3.
Static characteristics
T
Symbol
Test conditions
= 28 A, t
= 380 µs
Value
1.55
0.8
Unit
V
j
V
I
25 °C
Max.
Max.
Max.
TM
p
TM
V
Threshold voltage
Dynamic resistance
150 °C
V
TO
R
150 °C
25 °C
19
2
mΩ
µA
D
V
V
= V
= V
= V
DRM RRM
Max.
Max.
D
R
I
/I
150 °C
150 °C
6.5
2.8
mA
mA
DRM RRM
= V
= 400
V
,
p
eak voltage
D
R
1. For
both polarities of A2 referenced to A1.
Table 4.
Thermal resistance
Parameter
Symbol
Value
1.0
Unit
°C/W
°C/W
R
Junction to case (AC)
Junction to ambient
Max.
Typ.
th(j-c)
th(j-a)
R
60
DS13158
–
Rev 3
page 3/11
T2035H-8T
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1.
Maximum power dissipation versus on-state
RMS current
Figure 2.
On-state RMS current versus case temperature
I
(A)
T(RMS)
25
20
15
10
5
P(W)
25
α = 180°
α = 180°
20
15
10
5
180°
I
(A)
T
(RMS)
T
(°C)
c
0
0
0
2
4
6
8
10
12
14
16
18
20
0
25
50
75
100
125
150
Figure 3.
On-state RMS current versus ambient
temperature (free air convection)
Figure 4.
On-state characteristics (maximum values)
I
TM
(A)
1000
I
(A)
T(RMS)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
T max.
j
α = 180°
V
= 0.8 V
to
= 19 mΩ
R
d
100
10
1
T =
150 °C
j
T =
25 °C
j
T
(°C)
a
V
(V)
TM
0
1
2
3
4
5
0
25
50
75
100
125
150
Figure 6.
Recommended maximum case-to-ambient
thermal resistance versus ambient temperature for
different peak off-state voltages
Figure 5.
Relative variation of thermal impedance versus
pulse duration
Rth(
c
–
a
) (°C/W)
(for heatsink sizing to avoid thermal runaway)
K = [Z
/R
]
th th
70
60
50
40
30
20
10
0
1.0E+00
1.0E-01
1.0E-02
1.0E-03
Ju
n
c
tion-to-ambiant thermal resistance :
Typical 60°C/W (without heatsink)
Z
th(j-c)
V
DRM
=V
RRM
=400 V
V
DRM
=V
RRM
=200 V
V
DRM
=V
RRM
= 600 V
Z
th(j-a)
V
DRM
=V
RRM
= 800 V
t
(s)
p
With 15°C/W heatsink
Ta (°C)
80
1E-03 1E-02 1E-01 1E+00
1E+01 1E+02 1E+03 1E+04
20
40
60
100
120
140
DS13158
–
Rev 3
page 4/11
T2035H-8T
Characteristics (curves)
Figure 8.
Relative variation of holding current and
latching current versus junction temperature (typical
values)
Figure 7.
Relative variation of gate trigger voltage and
current versus junction temperature (typical values)
I
,V [T
] / I
,V [T
= 25 °C]
GT GT
GT GT
j j
I ,I [T
] / I
,I [T
= 25 °C]
H
L
j
H
L
j
2.5
2
1.6
1.2
0.8
0.4
0.0
I
GT
Q3
I
H
I
GT
Q1-Q2
I
L
1.5
1
V
GT
Q1-Q2-Q3
0.5
0
T (°C)
j
T (°C)
j
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Figure 10.
Non repetitive surge peak on-state current for a
sinusoidal pulse with width t
p
< 10 ms
Figure 9.
Surge peak on-state current versus number of
cycles
I
TSM
(A)
10000
I
(A)
TSM
250
200
150
100
50
T
j
initial=25°C
t=20ms
One cycle
Non repetitive
T initial
= 25 °C
j
1000
dI/dt limitation:
100A/µs
I
TSM
Repetitive
= 128°C
T
c
100
t
(ms)
p
Number of cycles
0
10
1
10
100
1000
0.01
0.10
1.00
10.00
Figure 11.
Relative variation of static dV/dt immunity
versus junction temperature
Figure 12.
Relative variation of critical rate of decrease of
main current versus junction temperature
(dl/dt)c [T ] / (dl/dt)c [T
]
j = 150 °C
dV/dt [T ] / dV/dt [T
]
j
j
j = 150 °C
14
12
10
8
4
3
2
1
0
V
D
= V
R
= 536 V
6
4
2
T (°C)
j
T (°C)
j
0
25
50
75
100
125
150
25
50
75
100
125
150
DS13158
–
Rev 3
page 5/11
T2035H-8T
Characteristics (curves)
Figure 13.
Relative variation of leakage current versus junction temperature for different values of
blocking voltage
I
/I
[T , V
j
/V [Tj
max.,800 V]
] / I
/I
RRM
DRM RRM
DRM RRM
DRM
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
V
DRM
= V
RRM
= 800 V
V
D
= V
R
= 600 V
T (°C)
j
25
50
75
100
125
150
DS13158
–
Rev 3
page 6/11
T2035H-8T
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
2.1
TO-220AB package information
•
•
•
Molding compound resin is halogen free and meets UL94 flammability standard level V0
Lead-free plating package leads
Recommended torque: 0.4 to 0.6 N·m
Figure 14.
TO-220AB package outline
DS13158
–
Rev 3
page 7/11
T2035H-8T
TO-220AB package information
Table 5.
TO-220AB package mechanical data
Dimensions
Millimeters
Ref.
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
a1
a2
B
15.20
15.90
0.5984
0.6260
3.75
0.1476
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.73
2.65
1.14
1.14
15.80
14.00
10.40
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.88
2.95
1.70
1.70
16.80
0.5118
0.3937
0.0240
0.0484
0.1732
0.0193
0.0945
0.0945
0.2441
0.1469
0.1043
0.0449
0.0449
0.6220
0.5512
0.4094
0.0346
0.0520
0.1811
0.0276
0.1071
0.1063
0.2598
0.1528
0.1161
0.0669
0.0669
0.6614
b1
b2
C
c1
c2
e
F
I
L
I2
I3
I4
M
16.40
2.6
0.6457
0.1024
1. Inch
dimensions are for reference only.
DS13158
–
Rev 3
page 8/11
T2035H-8T
Ordering information
3
Ordering information
Figure 15.
Ordering information scheme
T
20 35
H –
8
T
Series
T = Triac
RMS current
20 = 20 A
Gate triggering current
35 = 35 mA
High temperature
H = High noise immunity and robust commutations
Voltage
8 = 800 V
Package
T = TO-220AB
Packing
Blank = Tube
Table 6.
Ordering information
Marking
Package
Weight
Base qty.
Delivery mode
T2035H-8T
TO-220AB
2.1 g
50
Tube
DS13158
–
Rev 3
page 9/11
T2035H-8T
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DS13158
–
Rev 3
page 11/11
