STMicroelectronics-T2035T-8G
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T2035T-8G
Datasheet
20 A 800 V D
2
PAK Snubberless™ Triac
Features
A2
•
•
•
•
•
•
High static dV/dt
High dynamic turn-off commutation (dl/dt)c
150 °C maximum junction temperature
Three quadrants
Surge capability V
DSM
, V
RSM
= 900 V
Benefits:
A2
G
A1
–
–
–
–
High immunity to false turn-on thanks to high static dV/dt
Better turn-off in high temperature environments thanks to (dI/dt)c
Increase of thermal margin due to extended working T
j
up to 150 °C
Good thermal resistance due to non-insulated tab.
D²PAK
A2
A2: Anode2
A1: Anode1
Applications
•
•
•
•
•
•
•
General purpose AC line load switching
G: Gate
G
Motor control circuits
Home appliances
Heating
A1
Lighting
Inrush current limiting circuits
Overvoltage crowbar protection
Product status link
Description
control function in general purpose AC switching where high commutation capability
defined are respected.
Product summary
I
20 A
800 V
900 V
35 mA
T(RMS)
V
/V
DRM RRM
D
2
PAK package is UL-94,V0 flammability resin compliance.
V
/V
DSM RSM
Package environmentally friendly Ecopack
®
2 graded (RoHS and Halogen Free
compliance).
I
GT
Snubberless™ is a trademark of STMicroelectronics.
DS12739
–
Rev 1
–
September 2018
For further information contact your local STMicroelectronics sales office.
T2035T-8G
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (limiting values)
Parameter
Symbol
Value
20
Unit
I
T =
122 °C
RMS on-state current (full sine wave)
A
T(RMS)
c
t =
20 ms
160
168
169
100
800
600
900
4
p
Non repetitive surge peak on-state current (full cycle, T
initial
= 25 °C
j
I
A
TSM
t =
16.7 ms
p
2
2
2
t =
10 ms
p
I t
I t
value for fusing
A s
Critical rate of rise of on-state current, I
= 2 x I
, tr ≤ 100 ns
T initial
= 150 °C, f = 100 Hz
dl/dt
/V
A/µs
V
G
GT
j
T =
125 °C
j
V
Repetitive peak off-state voltage (50-60 Hz)
DRM RRM
T =
150 °C
j
V
V
/V
t =
10 ms, T
= 25 °C
p
Non Repetitive peak off-state voltage
Peak gate current
V
DSM RSM
j
I
A
GM
t =
20 µs, T
= 150 °C
p
j
V
Peak Gate Voltage
5
V
GM
P
T =
150 °C
j
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
1
W
G(AV)
T
-40 to +150
°C
-40 to +150
°C
stg
T
j
Table 2.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Quadrants; T
Symbol
Test conditions
Value
Unit
j
V
V
V
= 12
V
, R
=
3
0 Ω
I
I – II – III
Max.
35
mA
D
D
D
L
GT
V
= 12 V, R
= 30 Ω
I – II – III
I – II – III
I – III
Max.
Max.
Max.
Max.
Max.
1.0
0.15
50
V
GT
L
V
= 600
V
, R
=
3
.3 kΩ
T =
150 °C
j
V
GD
L
mA
mA
mA
I
I =
1.2 x I
G GT
L
II
80
I =
500 mA, gate open
T
I
45
H
V
V
= 536
V
,
g
ate open
= 402
V
,
g
ate open
T =
125 °C
Min.
Min.
Min.
Min.
1500
1000
27.5
17.5
V/µs
V/µs
A/ms
A/ms
D
D
j
T =
150 °C
j
T =
125 °C
j
Without snubber
T =
150 °C
j
1. Minimum
I is
guaranteed at 5% of I
max
GT
GT
2. For
both polarities of A2 referenced to A1.
DS12739
–
Rev 1
page 2/12
T2035T-8G
Characteristics
Table 3.
Static characteristics
Test conditions
Symbol
Value
Unit
V
V
I =
28.2 A, t
= 380 µs
25 °C
Max.
Max.
Max.
1.50
0.85
T
p
TM
V
Threshold on-state voltage
Dynamic resistance
150 °C
V
TO
R
D
150 °C
25 °C
22
5
mΩ
µA
V
DRM
= V
= 800 V
= 600 V
Max.
Max.
RRM
I
/I
125°C
150 °C
1.7
4.1
mA
mA
DRM RRM
V
= V
DRM
RRM
1. For
both polarities of A2 referenced to A1.
Table 4.
Thermal resistance
Symbol
Parameter
Value
1.15
Unit
R
Junction to case (AC)
D²PAK
Max.
°C/W
th(j-c)
DS12739
–
Rev 1
page 3/12
T2035T-8G
Characteristics (curves)
1.2
Characteristics curves
Figure 1.
Maximum power dissipation versus on-state
RMS current
Figure 2.
On-state RMS current versus case temperature
I
(A)
T(RMS)
P(W)
26
22
20
18
16
14
12
10
8
24
α = 180°
22
α = 180°
20
18
16
14
12
10
8
6
4
6
T
(°C)
c
180°
4
2
2
0
I
(A)
T
(RMS)
10
0
0
25
50
75
100
125
150
0
2
4
6
8
12
14
16
18
20
Figure 3.
On-state RMS current versus ambient
temperature (free air convection)
Figure 4.
Relative variation of thermal impedance versus
pulse duration
I
(A)
T(RMS)
K = [Z
/R
]
th th
1.0E+00
1.0E-01
1.0E-02
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
α = 180°
Z
th(j-c)
T
(°C)
a
t
(s)
p
0
25
50
75
100
125
150
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
DS12739
–
Rev 1
page 4/12
T2035T-8G
Characteristics (curves)
Figure 5.
Relative variation of gate trigger current, holding
current and latching current versus junction temperature
(typical values)
Figure 6.
Surge peak on-state current versus number of
cycles
I (A)
TSM
I
, I
, I
[T ] / I
, I
, I
[T =
25 °C]
GT
H
L
j
GT
H
L
j
180
160
140
120
100
80
2.5
2.0
1.5
1.0
0.5
0.0
t=20ms
I
GT
One cycle
Non repetitive
T initial
= 25 °C
j
I
H
and I
L
Repetitive
= 122°C
60
T
c
40
20
T (°C)
j
Number of cycles
0
1
10
100
1000
-40
-20
0
20
40
60
80
100
120
140
160
Figure 7.
Non repetitive surge peak on-state current for a
sinusoidal pulse with width t
p
< 10 ms
Figure 8.
On-state characteristics (maximum values)
I
TM
(A)
1000
I
(A)
TSM
T max.
j
10000
1000
100
V
= 0.85 V
R =
22 mΩ
d
to
T initial
= 25 °C
j
dl/dt limitation: 100 A/µs
100
10
1
T =
150 °C
j
I
TSM
T =
25 °C
j
V
(V)
TM
t
P
(ms)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.01
0.10
1.00
10.00
Figure 10.
Relative variation of critical rate of decrease of
main current versus reapplied (dV/dt)
c
(typical values)
Figure 9.
Relative variation of critical rate of decrease of
main current versus junction temperature
(dl/dt)c [T ] / (dl/dt)c [T
]
j
j = 150 °C
(dl/dt)c [(dV/dt)c] / specified (dl/dt)c
2.0
8
7
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
T (°C)
j
(dV/dt)c (V/µs)
0.0
25
50
75
100
125
150
0.1
1.0
10.0
100.0
DS12739
–
Rev 1
page 5/12
T2035T-8G
Characteristics (curves)
Figure 11.
Relative variation of leakage current versus
junction temperature for different values of blocking
voltage (typical values)
Figure 12.
Thermal resistance junction to ambient versus
copper surface under tab
R
th(j-a)
(°C/W)
I
I
at [ T
] / I
, I
at [T
]*
j max.
DRM, RRM
j
DRM RRM
80
D²PAK
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
Epoxy printed circuit board FR4, e
Cu
= 35 µm
70
60
50
40
30
20
V
DRM
= V
RRM
= 800 V
V
DRM
= V
RRM
= 600 V
S
Cu
(cm²)
10
*[T max
= 125 °C; V
DRM
, V
= 800 V]
RRM
= 600 V]
RRM
j
[T max
= 150 °C; V
DRM
, V
j
T (°C)
j
0
0
5
10
15
20
25
30
35
40
25
50
75
100
125
150
DS12739
–
Rev 1
page 6/12
T2035T-8G
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
2.1
D²PAK package information
•
•
•
ECOPACK
®
2compliant
Lead-free package leads finishing
Molding compound resin is halogen-free and meets UL94 standard level V0
Figure 13.
D²PAK package outline
A
E
E1
E2
c2
1
2
3
b2
e
Max resin gate protrusion: 0.5 mm (1)
b
G
A1
A2
A3
R
Gauge Plane
c
V2
(1) Resin gate is accepted in each of position shown on the drawing, or their symmetrical.
DS12739
–
Rev 1
page 7/12
T2035T-8G
D²PAK package information
Table 5.
D²PAK package mechanical data
Dimensions
Ref.
Millimeters
Typ.
Min.
4.30
2.49
0.03
Max.
4.60
2.69
0.23
Min.
Typ.
Max.
A
A1
A2
A3
b
0.1693
0.0980
0.0012
0.1811
0.1059
0.0091
0.25
0.0098
0.70
1.25
0.45
1.21
8.95
7.50
1.30
0.93
1.7
0.0276
0.0492
0.0177
0.0476
0.3524
0.2953
0.0512
0.0366
0.0669
0.0236
0.0535
0.3681
0.3150
0.0669
b2
c
0.60
1.36
9.35
8.00
1.70
c2
D
D1
D2
e
2.54
0.1
E
10.00
8.30
6.85
4.88
15
10.28
8.70
7.25
5.28
15.85
2.28
1.40
1.75
0.3937
0.3268
0.2697
0.1921
0.5906
0.0701
0.0500
0.0551
0.4047
0.3425
0.2854
0.2079
0.6240
0.0898
0.0551
0.0689
E1
E2
G
H
L
1.78
1.27
1.40
L2
L3
R
0.40
0.0157
0°
8°
0°
8°
1. Dimensions
in inches are given for reference only
2. Degrees
DS12739
–
Rev 1
page 8/12
T2035T-8G
D²PAK package information
Figure 14.
D²PAK recommended footprint (dimensions are in mm)
16.90
10.30
5.08
1.30
3.70
8.90
Figure 15.
D²PAK stencil definitions(dimensions are in mm)
DS12739
–
Rev 1
page 9/12
T2035T-8G
Ordering information
3
Ordering information
Figure 16.
Ordering information scheme
T
20 35
T
–
8
G – TR
SnubberlessTM TRIAC
T = Triac
Current (RMS) / Type
20 = 20 A
Gate Current
35 = 35 mA
Specific application
T = increased (dl/dt)c and dV/dt producing reduced I
TSM
Voltage
8 = 800 V
Package
G = D²PAK
Packing
Blank = Tube
TR =
T
a
pe and reel
Table 6.
Ordering information
Order code
T2035T-8G-TR
T2035T-8G
Marking
Package
Weight
Base qty.
1000
Delivery mode
T
a
pe and reel
Tube
T2035T-8G
D²PAK
1.6 g
50
DS12739
–
Rev 1
page 10/12
T2035T-8G
Revision history
Table 7.
Document revision history
Date
12-Sep-2018
Version
Changes
1
Initial release.
DS12739
–
Rev 1
page 11/12
T2035T-8G
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T
.
A
ll other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS12739
–
Rev 1
page 12/12
