STMicroelectronics-T2535T-8G-TR

Part #STMicroelectronics-T2535T-8G-TR
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STMicroelectronics-T2535T-8G-TR
T2535T-8G  
Datasheet  
25 A – 800 V – T-series Triac in D²PAK  
Features  
A2  
•
•
•
•
•
•
•
25 A medium current Triac  
150 °C maximum junction temperature T

J  

Surge capability V

DSM

, V

RSM

= 900 V  
Three triggering quadrants  
A2  
G
A1  
High noise immunity – static dV/dt  
Robust dynamic turn-off commutation – (dI/dt)c  

ECOPACK2

compliant component  
D²PAK  
Applications  
A2  
A2: Anode2  
A1: Anode1  
•
•
•
•
•
•
•
•
General purpose AC line load control  
AC induction and universal motor control  
Heating: water heater, e-bidet  
Power tools  
G: Gate  
G
A1  
Cooker, oven  
Lighting and automation I/O control  
Inrush current limiting circuits  
Overvoltage crowbar protection  
Description  
The

Triac in SMD D

2

PAK package can be used for the on/off or phase  
angle control function in general purpose AC switching.  
Product status link  
Based on the ST Snubberless technology, it offers higher specified turn-off  
commutation and noise immunity levels up to 150 °C.  
Product summary  
SMD D

2

PAK package is suitable for automatic assembly line.  
I
25 A  
800 V  
900 V  
35 mA  
T(RMS)  
V
, V  
, V  
DRM  
RRM  
The

safely optimizes the control of the motors and heaters loads for the  
most constraining environments of home appliances.  
V
DSM  
RSM  
I
GT  
DS13451
–
Rev 1
–
September 2020  
For further information contact your local STMicroelectronics sales office.  

T2535T-8G  
Characteristics  
1
Characteristics  
Table 1.
Absolute maximum ratings (limiting values)  
Parameter  
Symbol  
Value  
Unit  
I
T =
 
121 °C  
c
RMS on-state current (full sine wave)  
25  
A
T(RMS)  
t = 16.7 ms  
t = 20 ms  
210  
200  
264  
I
Non repetitive surge peak on-state current (full cycle, T
 
initial = 25 °C)  
A
TSM  
j
2
2
2
t =
 
10 ms  
p
I t  
I t
 
value for fusing  
A s  
Critical rate of rise of on-state current, I
 
= 2 x I
 
, tr ≤ 100 ns, f = 100 Hz  
dl/dt  
f = 120 Hz  
100  
800  
600  
A/µs  
V
G
GT  
T =
 
125 °C  
j
V
/
DRM  
Repetitive peak off-state voltage  
V
RRM  
T =
 
150 °C  
j
V
V
/
DSM  
t =
 
10 ms  
p
T =
 
25 °C  
j
Non Repetitive peak off-state voltage  
900  
V
RSM  
I
t =
 
20 µs  
p
T =
 
150 °C  
j
Peak gate current  
4
A
GM  
p
t =
 
20 μs  
p
T =
 
150 °C  
Maximum gate power dissipation  
Average gate power dissipation  
Storage temperature range  
Operating junction temperature range  
5
1
W
W
°C  
°C  
°C  
GM  
j
P
T =
 
150 °C  
j
G(AV)  
T
-40 to +150  
-40 to +150  
260  
stg  
T
j
T
Maximum lead temperature for soldering during 10 s  
L
Table 2.
Electrical characteristics (T

j

= 25 °C, unless otherwise specified)  
Symbol  
Test conditions  
Quadrants  
Value  
Unit  
Min.  
Max.  
Max.  
5
35  
1
I
mA  
GT  
V
= 12
V
, R
 
=
3
0 Ω  
L
I – II – III  
D
V
V
V
GT  
V
V
I
= V  
, R
 
= 3.3 kΩ, T
 
= 150 °C  
DRM L
 
j  
I – II – III  
I – III  
II  
Min.  
Max.  
Max.  
Max.  
0.15  
50  
GD  
D
I
= 1.2 x I  
GT  
mA  
L
G
80  
I =
 
500 mA, gate open  
T
I
35  
mA  
H
V
V
= 536
V
,
g
ate open  
= 402
V
,
g
ate open  
T =
 
125 °C  
Min.  
Min.  
Min.  
Min.  
1500  
1000  
28  
V/µs  
V/µs  
A/ms  
A/ms  
D
D
j
dV/dt

T =
 
150 °C  
j
T =
 
125 °C  
j
(dl/dt)c

Without snubber network  
T =
 
150 °C  
j
18  
1. For
 
both polarities of A2 referenced to A1.  
DS13451
–
Rev 1  
page 2/12  
 

T2535T-8G  
Characteristics  
Table 3.
Static characteristics  
Test conditions  
Symbol  
Value Unit  
V
I
= 35 A, t
 
= 380 µs  
T =
 
25 °C  
Max.  
1.5  
V
V
TM  
p
j
TM  
V
T =
 
150 °C  
j
Threshold voltage  
Dynamic resistance  
Max. 0.80  
TO  
T =
 
150 °C  
j
R
Max.  
Max.  
17  
5
mΩ  
µA  
mA  
D
T =
 
25 °C  
j
V
= V
 
= 800
V
,
p
eak voltage  
D
R
T =
 
125 °C  
j
5
I
/I  
DRM RRM  
V
V
= V
 
= 600
V
,
p
eak voltage  
T =
 
150 °C  
Max.  
Max.  
6
D
R
j
mA  
= V
 
= 400
V
,
p
eak voltage  
T =
 
150 °C  
j
5
D
R
1. For
 
both polarities of A2 referenced to A1.  
Table 4.
Thermal resistance  
Parameter  
Symbol  
Value  
Unit  
R
Junction to case (AC)  
Junction to ambient  
Max.  
Typ.  
1
th(j-c)  
th(j-a)  
°C/W  
R
45  
(S =
 
2 cm2)  
CU  
1. Scu
 
: copper pad surface under tab, 35 μm copper thickness on FR4 PCB.  
DS13451
–
Rev 1  
page 3/12  
 

T2535T-8G  
Characteristics (curves)  
1.1  
Characteristics (curves)  
Figure 1.
Maximum power dissipation versus on-state  
RMS current (full cycle)  
Figure 2.
On-state RMS current versus case temperature  
(full cycle)  
I

T(RMS)

(A)  
30  
P(W)  
35  
30  
25  
α = 180 °  
25  
20  
15  
10  
5
20  
α = 18
0
°  
15  
10  
5
I

T(RMS)

(A)  
10  
T

c

(°C)  
75  
0
0
0
5
15  
20  
25  
0
25  
50  
100  
125  
150  
Figure 3.
On-state RMS current versus ambient  
temperature (free air convection)  
Figure 4.
On-state characteristics (maximum)  
I
(A)  
TM  
1000  
100  
10  
I

T(RMS)

(A)  
4.5  
3.5  
max  
T

j  

4
V

TO

= 0.8 V  
R

D

= 17 mΩ  
α = 18
0
°  
3
2.5  
2
T

j

= 150°C  
T

j

= 25°C  
1.5  
1
0.5  
T

a

(
°C)  
V
4
(V)  
TM  
0
1
0
25  
50  
75  
100  
125  
150  
0
1
1.5  
2
2.5  
3
3.5  
4.5  
0.5  
DS13451
–
Rev 1  
page 4/12  

T2535T-8G  
Characteristics (curves)  
Figure 5.
Relative variation of I

GT

,I

H

, I

L

vs junction  
temperature (typical values)  
Figure 6.
Relative variation of critical rate of decrease of  
main current versus junction temperature  
(dI/dt)

c

[
T

j

] / (dI/dt)

c

[
T

j

= 150°C]  
8
I

GT

, I

H

, I

L

[
T

j

]
/
I

GT

, I

H

, I

L

[T

j

= 25 °C]  
2.5  
7
6
5
4
3
2
I

GT  

2.0  
1.5  
1.0  
0.5  
0.0  
I

H

& I

L  

1
T

j

(°C)  
60  
T

j

(°C)  
0
-40  
-20  
0
20  
40  
80  
100  
120  
140  
160  
25  
50  
75  
100  
125  
150  
Figure 7.
Relative variation of critical rate of decrease of  
current (dI/dt)c versus reapplied (dV/dt)c  
Figure 8.
Surge peak on-state current versus number of  
cycles  
(dI/dt)

c

[ (dV/dt
)

c

] / specified (dI/d
t
)

c  

2.0  
I

TSM

(A)  
250  
typical values  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
200  
150  
Rep
e
t
itive  
T

c

= 121°C  
100  
50  
0
Non repetiti
v
e  
T

j

initial =  
25°C  
Number of cycles  
100  
0.2  
(dV/dt
)

C

(V/µs)  
1
10  
1000  
0.0  
0.1  
1.0  
10.0  
100.0  
Figure 9.
Non repetitive surge peak on-state current for a  
sinusoidal pulse width t

P

< 10 ms  
Figure 10.
Relative variation of thermal impedance versus  
pulse duration  
I

TSM

(A)  
K=[Z

th

/R

t
h

]  
1.0E+00  
10000  
Tj initial=25 °C  
Z

th(j-c)  

dI/dt limitation:
 
100 A/µs  
Z

th(j-a)  

1.0E-01  
1.0E-02  
1000  
I

T
S
M  

t

P

(s)  
t

P

(ms)  
10.00  
1.0E-03  
100  
1.0E-03  
1.0E-02  
1.0E-01  
1.0E+00 1.0E+01 1.0E+02 1.0E+03  
0.01  
0.10  
1.00  
DS13451
–
Rev 1  
page 5/12  

T2535T-8G  
Characteristics (curves)  
Figure 11.
Leakage current versus junction temperature for different values of blocking voltage (typical  
values)  
I

DRM

/I

RRM

(µA)  
1.0E+04  
V
=

V

R

=600 V  
D  
1.0E+03  
V
=V =400 V  
D
R  
1.0E+02  
1.0E+01  
1.0E+00  
1.0E-01  

V

D

=
V

R

=200 V  
T

j

(°C)  
100  
50  
75  
125  
150  
DS13451
–
Rev 1  
page 6/12  

T2535T-8G  
Package information  
2
Package information  
In order to meet environmental requirements, ST offers these devices in different grades of

packages,  
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product  
status are available at:

. ECOPACK is an ST trademark.  
2.1  
D²PAK package information  
•
•
•

ECOPACK2

compliant  
Lead-free package leads finishing  
Molding compound resin is halogen-free and meets UL94 flammability standard level V0  
Figure 12.
D²PAK package outline  
A
E
E1  
E2  
c2  
1
2
3
b2  
e
Max resin gate protrusion: 0.5 mm (1)  
b
G
A1  
A2  
A3  
R
Gauge Plane  
c
V2  
(1) Resin gate is accepted in each of position shown on the drawing, or their symmetrical.  
DS13451
–
Rev 1  
page 7/12  

T2535T-8G  
D²PAK package information  
Table 5.
D²PAK package mechanical data  
Dimensions  
Inches

Ref.  
Millimeters  
Min.  
4.30  
2.49  
0.03  
Typ.  
Max.  
4.60  
2.69  
0.23  
Min.  
Typ.  
Max.  
A
A1  
A2  
A3  
b
0.1693  
0.0980  
0.0012  
0.1811  
0.1059  
0.0091  
0.25  
0.0098  
0.70  
1.25  
0.45  
1.21  
8.95  
7.50  
1.30  
2.54  
10.00  
8.30  
6.85  
4.88  
15  
0.93  
1.7  
0.0276  
0.0492  
0.0177  
0.0476  
0.3524  
0.2953  
0.0512  
0.10000  
0.3937  
0.3268  
0.2697  
0.1921  
0.5906  
0.0701  
0.0460  
0.0551  
0.0366  
0.0669  
0.0236  
0.0535  
0.3681  
0.3150  
0.0669  
b2  
c
0.60  
1.36  
9.35  
8.00  
1.70  
c2  
D
D1  
D2  
e
E
10.28  
8.70  
7.25  
5.28  
15.85  
2.28  
1.40  
1.75  
0.4047  
0.3425  
0.2854  
0.2079  
0.6240  
0.0898  
0.0551  
0.0689  
E1  
E2  
G
H
L
1.78  
1.19  
1.40  
L2  
L3  
R
0.40  
0.0157  
0°  
8°  
0°  
8°  
1. Dimensions
 
in inches are given for reference only  
2. Degrees  
DS13451
–
Rev 1  
page 8/12  
 
 

T2535T-8G  
D²PAK package information  
Figure 13.
D²PAK recommended footprint (dimensions are in mm)  
16.90  
10.30  
5.08  
1.30  
3.70  
8.90  
Figure 14.
D²PAK stencil definitions (dimensions are in mm)  
DS13451
–
Rev 1  
page 9/12  

T2535T-8G  
Ordering information  
3
Ordering information  
Figure 15.
Ordering information scheme  
T 25 35 T
 
– 8 G
 
– TR  
Triac series  
RMS current  
25 = 25 A  
Gate triggering current  
35 = 35 mA  
High temperature  
T = T series  
Voltage  
8 = 800 V  
Package  
G = D²PAK  
Packing  
TR = tape and reel, blank = tube  
Table 6.
Ordering information  
Order code  
T2535T-8G  
Marking  
Package  
Weight  
Base Qty.  
50  
Delivery mode  
Tube  
T2535T-8G  
T2535T-8G  
D²PAK  
1.6 g  
T2535T-8G-TR  
2500  
T
a
pe and reel  
DS13451
–
Rev 1  
page 10/12  

T2535T-8G  
Revision history  
Table 7.
Document revision history  
Date  
23-Sep-2020  
Version  
Changes  
1
Initial release.  
DS13451
–
Rev 1  
page 11/12  

T2535T-8G  
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T
.
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DS13451
–
Rev 1  
page 12/12