STMicroelectronics-T3035H-8G
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T3035H-8G
Datasheet
30 A – 800 V – 150 °C 8H Triac in D²PAK
Features
A2
A1
•
•
•
•
•
•
•
30 A high current Triac
800 V symmetrical blocking voltage
G
150 °C maximum junction temperature T
j
Three triggering quadrants
High noise immunity – static dV/dt
Robust dynamic turn-off commutation – (dl/dt)c
ECOPACK2
compliant component
A2
Applications
•
•
•
•
•
•
Home automation Smart AC plug
A2
G
A1
Water heater, room heater and coffee machine
AC Induction and Universal Motor control
Inrush current limiter in AC DC rectifiers
Lighting and automation I/O control
D²PAK
General purpose AC line load control
Description
in D²PAK provides an enhanced thermal management: this 30 A triac is the right
choice for a compact drive of heavy AC loads and enables the heatsink size
reduction.
Product status link
Based on the ST Snubberless high temperature technology, it offers higher specified
turn off commutation and noise immunity levels up to the T
j
max.
Product summary
and inductive loads for industrial control and home appliances.
I
30 A
800 V
900 V
35 mA
T(RMS)
V
/V
DRM RRM
Available in D²PAK package, it is suitable for compact SMD designs on surface
mount boards or insulated metal substrate or direct bond copper boards.
V
/V
DSM RSM
I
GT
DS12705
–
Rev 5
–
December 2020
For further information contact your local STMicroelectronics sales office.
T3035H-8G
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (limiting values)
Parameter
Symbol
Value
30
Unit
I
T =
121 °C
RMS on-state current (full sine wave)
A
T(RMS)
c
t =
16.7 ms
283
270
482
Non repetitive surge peak on-state current
p
I
A
TSM
(full cycle, T
initial = 25 °C)
t =
20 ms
p
j
2
2
2
t =
10 ms
p
I t
I t
value for fusing
A s
Critical rate of rise of on-state current,
T =
25 °C
dl/dt
/V
100
A/µs
j
I
= 2 x I
, tr ≤ 100 ns, f = 100 Hz
GT
G
V
Repetitive peak off-state voltage
Non Repetitive peak off-state voltage
Peak gate current
800
V
V
DRM RRM
V
/V
t =
10 ms, T
= 25 °C
p
900
DSM RSM
j
I
4
A
GM
t =
20 µs, T
= 150 °C
p
j
P
Maximum gate power dissipation
Average gate power dissipation
Storage temperature range
5
W
W
°C
°C
GM
P
T =
150 °C
j
1
G(AV)
T
-40 to +150
-40 to +150
stg
T
Operating junction temperature range
j
Table 2.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrants
I – II – III
Value
5
Unit
mA
mA
V
V
V
V
V
= 12
V
, R
=
3
0 Ω
Min.
Max.
Max.
D
D
D
D
L
I
GT
= 12 V, R
= 30 Ω
I – II – III
35
L
V
V
= 12 V, R
= 30 Ω
I – II – III
1.3
GT
L
= V
, R
= 3.3 kΩ
T =
150 °C
j
I – II – III
I – III
II
Min.
Max.
Max.
Max.
0.15
75
V
GD
DRM
L
mA
mA
mA
I
I =
1.2 x I
G GT
L
90
I =
500 mA, gate open
I
60
T
H
V
= 536
V
,
g
ate open
T =
150 °C
Min.
Min.
2000
25
V/µs
D
j
T =
150 °C
j
Without snubber network
A/ms
1. For
both polarities of A2 referenced to A1.
DS12705
–
Rev 5
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T3035H-8G
Characteristics
Table 3.
Static characteristics
T
Symbol
Test conditions
I =
42 A, t
= 380 µs
Value
1.55
Unit
V
j
V
25 °C
Max.
Max.
Max.
T
p
TM
V
Threshold voltage
Dynamic resistance
150 °C
0.83
V
TO
R
150 °C
25 °C
16
2.5
8.5
3.6
mΩ
µA
D
V
V
= V
= V
= V
DRM RRM
Max.
Max.
D
R
I
/I
150°C
150 °C
mA
mA
DRM RRM
= V
= 400
V
,
p
eak voltage
D
R
1. For
both polarities of A2 referenced to A1.
Table 4.
Thermal resistance
Parameter
Symbol
Value
0.8
Unit
°C/W
°C/W
R
Junction to case (AC)
Max.
Typ.
th(j-c)
Rth(j-a)
45
CU
1. Scu
: copper pad surface under tab, 35 μm copper thickness on FR4 PCB.
DS12705
–
Rev 5
page 3/12
T3035H-8G
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1.
Maximum power dissipation versus on-state
RMS current
Figure 2.
On-state RMS current versus case temperature
I
(A)
T(RMS)
P(W)
40
32
28
24
20
16
12
8
α = 180°
α = 180°
36
32
28
24
20
16
12
8
180°
4
T
(°C)
c
4
0
I
(A)
T
(RMS)
0
75
0
25
50
100
125
150
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Figure 3.
On-state RMS current versus ambient
temperature (free air convection)
Figure 4.
On-state characteristics (maximum values)
I
TM
(A)
1000
I
(A)
T(RMS)
T max.
j
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
R
= 0.83 V
= 16 mΩ
to
d
α = 180°
100
10
1
T =
150 °C
j
T =
25 °C
j
T
(°C)
a
V
(V)
TM
0
25
50
75
100
125
150
0
1
2
3
4
5
Figure 6.
Recommended maximum case-to-ambient
thermal resistance versus ambient temperature for
different peak off-state voltages
Figure 5.
Relative variation of thermal impedance versus
pulse duration
K = [Z
/R
]
th th
Rth(c-a) (°C/W)
(for heatsink sizing to avoid thermal runaway)
70
60
50
40
30
20
10
0
1.0E+00
1.0E-01
1.0E-02
Z
th(j-c)
V
DRM
=V
RRM
=200 V
V
DRM
=V
RRM
=400 V
Z
th(j-a)
V
DRM
=V
RRM
= 600 V
V
DRM
=V
RRM
= 800 V
t
(s)
p
Ta
(
°C)
80
20
40
60
100
120
140
1.0E-03 1.0E-02 1.0E-01 1.0E+001.0E+011.0E+0
2
1
.0E+031.0E+041.0E+05
DS12705
–
Rev 5
page 4/12
T3035H-8G
Characteristics (curves)
Figure 8.
Relative variation of leakage current versus
junction temperature for different values of blocking
voltage
Figure 7.
Thermal resistance junction to ambient versus
copper surface under tab
R
th(j-a)
(°C/W)
I
/I
RRM
[T , V
j
/V [Tj
max.,800 V]
] / I
/I
DRM RRM
DRM RRM
DRM
80
1.0E+00
D²PAK
Epoxy printed circuit board FR4, e
Cu
= 35 µm
70
60
50
40
30
20
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
V
DRM
= V
RRM
= 800 V
V
DRM
= V
RRM
= 600 V
S
Cu
(cm²)
10
T (°C)
j
0
0
5
10
15
20
25
30
35
40
25
50
75
100
125
150
Figure 10.
Relative variation of holding current and
latching current versus junction temperature (typical
values)
Figure 9.
Relative variation of gate trigger voltage and
current versus junction temperature (typical values)
I
,V [T
] / I
,V [T
= 25 °C]
GT GT
j
GT GT
j
I ,I [T
] / I
,I [T
= 25 °C]
H
L
j
H
L
j
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.5
1.0
0.5
0.0
I
GT
Q3
I
L
I
GT
Q1-Q2
V
GT
Q1-Q2-Q3
I
H
T (°C)
j
T (°C)
j
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Figure 12.
Non repetitive surge peak on-state current for a
sinusoidal pulse with width t
p
< 10 ms
Figure 11.
Surge peak on-state current versus number of
cycles
I
(A)
TSM
I
(A)
TSM
10000
1000
100
dl/dt limitation: 100 A/µs
300
250
200
150
100
50
T initial
= 25 °C
j
t=20ms
One cycle
Non repetitive
T initial
= 25 °C
j
I
TSM
Repetitive
= 121°C
T
c
Number of cycles
0
t (ms)
p
1
10
100
1000
10
0.01
0.10
1.00
10.00
DS12705
–
Rev 5
page 5/12
T3035H-8G
Characteristics (curves)
Figure 13.
Relative variation of static dV/dt immunity
versus junction temperature
Figure 14.
Relative variation of critical rate of decrease of
main current versus junction temperature
(dl/dt)c [T ] / (dl/dt)c [T
]
j = 150 °C
j
dV/dt [T ] / dV/dt [T
]
j = 150 °C
j
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
V
D
= V
R
= 536 V
4
3
2
1
T (°C)
j
T (°C)
j
0
150
25
50
75
100
125
25
50
75
100
125
150
DS12705
–
Rev 5
page 6/12
T3035H-8G
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
2.1
D²PAK package information
•
•
•
ECOPACK2
compliant
Lead-free package leads finishing
Molding compound resin is halogen-free and meets UL94 flammability standard level V0
Figure 15.
D²PAK package outline
A
E
E1
E2
c2
1
2
3
b2
e
Max resin gate protrusion: 0.5 mm (1)
b
G
A1
A2
A3
R
Gauge Plane
c
V2
(1) Resin gate is accepted in each of position shown on the drawing, or their symmetrical.
DS12705
–
Rev 5
page 7/12
T3035H-8G
D²PAK package information
Table 5.
D²PAK package mechanical data
Dimensions
Ref.
Millimeters
Min.
4.30
2.49
0.03
Typ.
Max.
4.60
2.69
0.23
Min.
Typ.
Max.
A
A1
A2
A3
b
0.1693
0.0980
0.0012
0.1811
0.1059
0.0091
0.25
0.0098
0.70
1.25
0.45
1.21
8.95
7.50
1.30
2.54
10.00
8.30
6.85
4.88
15
0.93
1.7
0.0276
0.0492
0.0177
0.0476
0.3524
0.2953
0.0512
0.10000
0.3937
0.3268
0.2697
0.1921
0.5906
0.0701
0.0468
0.0551
0.0366
0.0669
0.0236
0.0535
0.3681
0.3150
0.0669
b2
c
0.60
1.36
9.35
8.00
1.70
c2
D
D1
D2
e
E
10.28
8.70
7.25
5.28
15.85
2.28
1.40
1.75
0.4047
0.3425
0.2854
0.2079
0.6240
0.0898
0.0551
0.0689
E1
E2
G
H
L
1.78
1.19
1.40
L2
L3
R
0.40
0.0157
0°
8°
0°
8°
1. Dimensions
in inches are given for reference only
2. Degrees
DS12705
–
Rev 5
page 8/12
T3035H-8G
D²PAK package information
Figure 16.
D²PAK recommended footprint (dimensions are in mm)
16.90
10.30
5.08
1.30
3.70
8.90
Figure 17.
D²PAK stencil definitions (dimensions are in mm)
DS12705
–
Rev 5
page 9/12
T3035H-8G
Ordering information
3
Ordering information
Figure 18.
Ordering information scheme
T
30 35
H –
8
G – TR
Series
T = Triac
RMS current
30 = 30 A
Gate triggering current
35 = 35 mA
High temperature
H = High noise immunity and robust commutations
Voltage
8 = 800 V
Package
G = D²PAK
Packing
TR =
T
a
pe and reel
Blank = Tube
Table 6.
Ordering information
Order code
T3035H-8G-TR
T3035H-8G
Marking
Package
Weight
Base qty.
1000
Delivery mode
T
a
pe and reel 13”
Tube
T3035H-8G
D²PAK
1.6 g
50
DS12705
–
Rev 5
page 10/12
T3035H-8G
Revision history
Table 7.
Document revision history
Date
Version
Changes
27-Jul-2018
1
2
3
4
5
Initial release.
25-Jun-2019
20-Dec-2019
15-Jan-2020
21-Dec-2020
Minor text changed.
Updated general description. Inserted STPOWER logo.
DS12705
–
Rev 5
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T3035H-8G
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DS12705
–
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