STMicroelectronics-T3035H-8I
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T3035H-8I
Datasheet
30 A – 800 V TO-220AB insulated H-series Snubberless Triac
Features
A2
A1
•
•
•
•
•
•
•
•
30 A high current Triac
800 V symmetrical blocking voltage
150 °C maximum junction temperature T
j
Three triggering quadrants
G
High noise immunity, static dV / dt
Robust dynamic turn-off commutation (dl/dt)c
ECOPACK2
compliant component
Comply with UL1557 insulation: 2.5 kV
–
Reference file: E81734
G
Applications
A2
A1
•
•
•
•
•
•
Home automation Smart AC plug
Water heater, room heater and coffee machine
AC Induction and Universal Motor control
Inrush current limiter in AC DC rectifiers
Lighting and automation I/O control
TO-220AB insulated
General purpose AC line load control
Description
Product status link
an enhanced thermal management: this 30 A Triac is the right choice for a compact
drive of heavy AC loads and enables the heatsink size reduction.
Product summary
Based on the ST Snubberless high temperature technology, it offers higher specified
turn off commutation and noise immunity levels up to the T
j
max.
I
30 A
T(RMS)
and inductive loads for industrial control and home appliances.
V
/V
800 V
900 V
35 mA
DRM RRM
V
/V
DSM RSM
By using an internal ceramic pad, it provides a recognized voltage insulation, rated at
2500 V
RMS
.
I
GT
DS12682
–
Rev 2
–
June 2019
For further information contact your local STMicroelectronics sales office.
T3035H-8I
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (limiting values)
Parameter
Symbol
Value
30
Unit
I
T =
91 °C
RMS on-state current (full sine wave)
A
T(RMS)
c
t = 16.7 ms
t = 20 ms
283
270
482
Non repetitive surge peak on-state current (full cycle,
T initial
= 25 °C)
j
I
A
TSM
2
2
2
t =
10 ms
p
I t
I t
value for fusing
A s
Critical rate of rise of on-state current, I
= 2 x I
, tr
≤ 100 ns, f = 100 Hz
G
GT
T =
25 °C
dl/dt
/V
100
A/µs
j
V
Repetitive peak off-state voltage
Non Repetitive peak off-state voltage
Peak gate current
800
V
V
DRM RRM
V
/V
t =
10 ms, T
= 25 °C
p
900
DSM RSM
j
I
4
A
GM
t =
20 µs, T
= 150 °C
p
j
P
Maximum gate power dissipation
Average gate power dissipation
Storage temperature range
Operating junction temperature range
5
1
W
W
°C
°C
°C
kV
GM
P
T =
150 °C
j
G(AV)
T
-40 to +150
-40 to +150
260
stg
T
j
T
Maximum lead temperature for soldering during 10 s
Insulation RMS voltage, 1 minute
L
V
INS
2.5
Table 2.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrants
I – II – III
Value
5
Unit
mA
mA
V
V
V
V
V
= 12
V
, R
=
3
0 Ω
Min.
Max.
Max.
D
D
D
D
L
I
GT
= 12 V, R
= 30 Ω
I – II – III
35
L
V
V
= 12 V, R
= 30 Ω
I – II – III
1.3
GT
L
= V
, R
= 3.3 kΩ
T =
150 °C
j
I – II – III
I – III
II
Max.
Max.
Max.
Max.
0.15
75
V
GD
DRM
L
mA
mA
mA
I
I =
1.2 x I
G GT
L
90
I =
500 mA, gate open
I
60
T
H
V
= 536
V
,
g
ate open
T =
150 °C
Min.
Min.
1500
25
V/µs
D
j
T =
150 °C
j
Without snubber network
A/ms
1. For
both polarities of A2 referenced to A1.
DS12682
–
Rev 2
page 2/11
T3035H-8I
Characteristics
Table 3.
Static characteristics
T
Symbol
Test conditions
I =
42 A, t
= 380 µs
Value
1.55
Unit
V
j
V
25 °C
Max.
Max.
Max.
T
p
TM
V
Threshold voltage
Dynamic resistance
150 °C
0.83
V
TO
R
150 °C
25 °C
16
5
mΩ
µA
D
V
= V
= 800 V
Max.
Max.
DRM
RRM
I
/I
150°C
150 °C
8.5
3.6
mA
mA
DRM RRM
V
DRM
= V
= 400
V
,
p
eak voltage
RRM
1. For
both polarities of A2 referenced to A1.
Table 4.
Thermal resistance
Parameter
Symbol
Value
1.6
Unit
°C/W
°C/W
R
Junction to case (AC)
Junction to ambient
Max.
Typ.
th(j-c)
th(j-a)
R
60
DS12682
–
Rev 2
page 3/11
T3035H-8I
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1.
Maximum power dissipation versus on-state
RMS current
Figure 2.
On-state RMS current versus case temperature
I
(A)
T(RMS)
P(W)
40
32
28
24
20
16
12
8
α = 180°
α = 180°
36
32
28
24
20
16
12
8
180°
4
T
(°C)
c
4
I
(A)
T
(RMS)
0
0
0
25
50
75
100
125
150
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Figure 3.
On-state RMS current versus ambient
temperature (free air convection)
Figure 4.
Relative variation of thermal impedance versus
pulse duration
K = [Z
/R
]
I
(A)
T(RMS)
th th
1.0E+00
1.0E-01
1.0E-02
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Z
Z
th(j-a)
th(j-c)
α = 180°
t
(s)
p
T
(°C)
a
0
25
50
75
100
125
150
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05
DS12682
–
Rev 2
page 4/11
T3035H-8I
Characteristics (curves)
Figure 6.
Relative variation of holding current and
latching current versus junction temperature (typical
values)
Figure 5.
Relative variation of gate trigger voltage and
current versus junction temperature (typical values)
I
,V [T
] / I
,V [T
= 25 °C]
GT GT
j
GT GT
j
I ,I [T
] / I
,I [T
= 25 °C]
H
L
j
H
L
j
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.5
1.0
0.5
0.0
I
GT
Q3
I
L
I
GT
Q1-Q2
V
GT
Q1-Q2-Q3
I
H
T (°C)
j
T (°C)
j
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Figure 7.
Surge peak on-state current versus number of
cycles
Figure 8.
On-state characteristics (maximum values)
I
TM
(A)
1000
I
(A)
TSM
300
250
200
150
100
50
T max.
j
V
R
= 0.83 V
= 16 mΩ
to
d
t=20ms
One cycle
Non repetitive
T initial
= 25 °C
j
100
10
1
T =
150 °C
j
T =
25 °C
j
Repetitive
= 91°C
T
c
V
(V)
TM
Number of cycles
0
0
1
2
3
4
5
1
10
100
1000
Figure 9.
Relative variation of static dV/dt immunity
versus junction temperature
Figure 10.
Relative variation of critical rate of decrease of
main current versus junction temperature
(dl/dt)c [T ] / (dl/dt)c [T
]
j = 150 °C
j
dV/dt [T ] / dV/dt [T
]
j = 150 °C
j
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
V
D
= V
R
= 536 V
4
3
2
1
T (°C)
j
T (°C)
j
0
150
25
50
75
100
125
25
50
75
100
125
150
DS12682
–
Rev 2
page 5/11
T3035H-8I
Characteristics (curves)
Figure 11.
Relative variation of leakage current versus
junction temperature for different values of blocking
voltage
Figure 12.
Recommended maximum case-to-ambient
thermal resistance versus ambient temperature for
different peak off-state voltages
Rth(c-a) (°C/W)
(for heatsink sizing to avoid thermal runaway)
I
/I
[T , V
/V [Tj
max.,800 V]
] / I
/I
RRM
j
DRM RRM
DRM RRM
DRM
70
60
50
40
30
20
10
0
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
Ju
n
c
tion-to-ambiant thermal resistance :
Typical 60°C/W (without heatsink)
V
DRM
=V
RRM
=400 V
V
DRM
=V
RRM
=200 V
V
DRM
= V
RRM
= 800 V
V
DRM
=V
RRM
= 600 V
V
DRM
= V
RRM
= 600 V
V
DRM
=V
RRM
= 800 V
With 15°C/W heatsink
Tj (°C)
T (°C)
j
80
20
40
60
100
120
140
25
50
75
100
125
150
DS12682
–
Rev 2
page 6/11
T3035H-8I
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
2.1
TO-220AB insulated package information
•
•
•
Epoxy resin is halogen free and meets UL94 flammability standard, level V0
Lead-free plating package leads
Recommended torque: 0.4 to 0.6 N·m
Figure 13.
TO-220AB insulated package outline
DS12682
–
Rev 2
page 7/11
T3035H-8I
TO-220AB insulated package information
Table 5.
TO-220AB insulated package mechanical data
Dimensions
Typ.
Ref.
Millimeters
Typ.
Min.
Max.
Min.
Max.
A
a1
a2
B
15.20
15.90
0.5984
0.6260
3.75
0.1476
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.73
2.65
1.14
1.14
15.80
14.00
10.40
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.88
2.95
1.70
1.70
16.80
0.5118
0.3937
0.0240
0.0484
0.1732
0.0193
0.0945
0.0945
0.2441
0.1469
0.1043
0.0449
0.0449
0.6220
0.5512
0.4094
0.0346
0.0520
0.1811
0.0276
0.1071
0.1063
0.2598
0.1528
0.1161
0.0669
0.0669
0.6614
b1
b2
C
c1
c2
e
F
I
L
I2
I3
I4
M
16.40
2.6
0.6457
0.1024
1. Inch
dimensions are for reference only.
DS12682
–
Rev 2
page 8/11
T3035H-8I
Ordering information
3
Ordering information
Figure 14.
Ordering information scheme
T
30 35
H –
8
I
Series
T = Triac
RMS current
30 = 30 A
Gate triggering current
35 = 35 mA
High temperature
H = High noise immunity and robust commutations
Voltage
8 = 800 V
Package
I = TO-220-AB 2.5 kV UL insulated
Packing
Blank = Tube
Table 6.
Ordering information
Marking
Package
Weight
Base qty.
50
Delivery mode
T3035H-8I
TO-220AB Ins.
2.3 g
Tube
DS12682
–
Rev 2
page 9/11
T3035H-8I
Revision history
Table 7.
Document revision history
Date
Version
Changes
27-Jul-2018
1
2
Initial release.
24-Jun-2019
Minor text changed.
DS12682
–
Rev 2
page 10/11
T3035H-8I
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DS12682
–
Rev 2
page 11/11
