STMicroelectronics-T810H-6G-TR
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T810H
High temperature 8 A sensitive TRIACs
Features
A2
■
Medium current TRIAC
■
Logic level sensitive TRIAC
G
■
150 °C max. T
turn-off commutation
j
A1
■
Clip bounding
■
RoHS (2002/95/EC) compliant packages
A2
Applications
A2
■
The T810H is designed for the control of AC
actuators in appliances and industrial systems.
G
G
A2
■
The multi-port drive of the microcontroller can
control the multiple loads of such appliances
and systems through these sensitive gate
TRIACs.
A2
A1
A1
TO-220AB
T810H-6T
D
2
P
A
K
T810H-6G
Description
Specifically designed to operate at 150 °C, the
new 8 A T810H TRIACs provide an enhanced
performance in terms of power loss and thermal
dissipation. This allows the optimization of the
heatsink size, leading to space and cost
effectiveness when compared to electro-
mechanical solutions.
Table 1.
Device summary
Symbol
Value
Unit
I
T(RMS)
V
DRM
/V
RRM
I
GT MAX
8
A
V
Based on ST logic level technolog
y
,
t
hey offer an
I
lower than 10 mA and specified minimal
600
10
GT
commutation and high noise immunity levels valid
mA
up to the T max.
j
May 2009
Doc ID 15714 Rev 1
1/10
10
Characteristics
T810H
1
Characteristics
Table 2.
Absolute maximum ratings
Symbol
I
T(RMS)
Parameter
Value
Unit
On-state rms current (full sine wave)
D
2
P
A
K, TO-220AB
T
c
= 135 °C
8
A
F = 60 Hz
F = 50 Hz
t
p
= 10 ms
t = 16.7 ms
t = 20 ms
84
80
42
Non repetitive surge peak on-state
current (full
cycle, T
j
initial = 25 °C)
I
TSM
A
²
²
²
I t
I t Value for fusing
A s
Critical rate of rise of on-state current
dI/dt
F = 120 Hz
T
j
= 150 °C
T
j
= 25 °C
50
A/µs
V
I
G
= 2 x I
GT
, t
r
≤
100 ns
Non repetitive surge peak off-state
voltage
V
DRM
/V
RRM
+ 100
V
DSM
/V
RSM
t
p
= 10 ms
t
p
= 20 µs
I
GM
Peak gate current
T
j
= 150 °C
T
j
= 150 °C
4
1
A
P
G(AV)
Average gate power dissipation
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
– 40 to + 150
– 40 to + 150
°C
Table 3.
Symbol
Electrical characteristics (T
= 25 °C, unless otherwise specified)
j
Test conditions
Quadrant
Min
Max.
Unit
I
GT
V
GT
V
GD
I – II – III
I – II – III
I – II – III
1
10
mA
V
V
D
= 12 V
R
L
= 33
Ω
1.0
V
D
= V
DRM
, R
L
= 3.3 k
Ω
0.15
V
(1)
I
H
I
T
= 100 mA
25
30
35
mA
I – III
II
I
L
I
G
= 1.2 I
GT
mA
V/µs
A/ms
dV/dt
(1)
(dI/dt)c
(1)
V
D
= 67%
V
DRM,
gate open, T
j
= 150 °C
Logic level, 0.1 V/µs, T
j
= 150 °C
Logic level, 15 V/µs, T
j
= 150 °C
75
11.4
3.0
1. For
both polarities of A2 referenced to A1.
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Doc ID 15714 Rev 1
T810H
Characteristics
Table 4.
Static characteristics
Symbol
Test conditions
T
j
= 25 °C
Value
Unit
(1)
(1)
(1)
V
T
V
t0
R
d
I
TM
= 11.3 A, t
p
= 380 µs
Threshold voltage
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
1.5
0.80
55.0
5
V
V
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
Dynamic resistance
m
Ω
µA
V
DRM
= V
RRM
3.1
2.5
2.0
I
DRM
I
RRM
V
D
/V
R
= 400 V (at peak mains voltage)
T
j
= 150 °C
V
D
/V
R
= 200 V (at peak mains voltage)
T
j
= 150 °C
mA
1. for
both polarities of A2 referenced to A1.
Table 5.
Symbol
R
th(j-c)
Thermal resistance
Parameter
Value
Unit
Junction to case (AC)
Junction to ambient
D
2
P
A
K / TO-220AB
1.60
45
S = 1 cm
2
D
2
P
A
K
°C/W
R
th(j-a)
TO-220AB
60
Figure 1.
Maximum power dissipation versus
Figure 2.
on-state rms current (full cycle)
On-state rms current versus case
temperature (full cycle)
P(W)
I
T(RMS)
(A)
10
9
8
7
6
5
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
T
C
(°C)
I
T(RMS
)
(A)
4
0
25
50
75
100
125
150
0
1
2
3
5
6
7
8
Doc ID 15714 Rev 1
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Characteristics
T810H
Figure 3.
On-state rms current versus
Figure 4.
Relative variation of thermal
ambient temperature (free air
convection, full cycle)
impedance, versus pulse duration
K=[Zth/Rth]
I
T(RMS)
(A)
1.E+00
1.E-01
1.E-02
1.E-03
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Zth(j-c)
Zth(j-a)
T
a
(°C)
tp(s)
0
25
50
75
100
125
150
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 5.
Relative variation of gate trigger
current and voltage versus junction
temperature (typical values)
Figure 6.
Relative variation of holding and
latching current versus junction
temperature (typical values)
I
GT
, V
GT
[T
j
] / I
GT
, V
GT
[T
j
=25 °C]
I
H
, I
L
[T
j
] / I
H
, I
L
[T
j
=25 °C]
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.5
1.0
0.5
0.0
I
Q3
GT
I
Q1
–
Q
2
GT
I
H
I
L
V
GT
Q1- Q2 -Q3
T
j
(°C)
T
j
(°C)
50
-50
-25
0
25
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Figure 7.
Surge peak on-state current
versus number of cycles
Figure 8.
Non-repetitive surge peak on-state
current and corresponding value
of I
t
2
I
TSM
(A), I²t (A²s)
I
TSM
(A)
1000
100
10
80
70
60
50
40
30
20
10
0
T
j
initial=25 °C
I
TSM
t=20ms
dI/dt limitation: 50 A/µs
One cycle
Non repetitive
T
j
initial=25 °C
I²t
Repetitive
T
C
=135 °C
Sinusoidal pulse width t
< 10 ms
p
Number of cycles
100
t
P
(ms)
1
1
10
1000
0.01
0.10
1.00
10.00
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Doc ID 15714 Rev 1
T810H
Characteristics
Figure 9.
On-state characteristics (maximum
Figure 10.
Relative variation of critical rate of
values)
decrease of main current versus
junction temperature
I
TM
(A)
100
(dI/dt)
C
[T
j
] / (dI/dt)
c
[T
j
=150 °C]
15
14
13
12
11
10
9
T
j
max
to
= 0.80 V
d
= 55 m
Ω
V
R
8
7
6
10
T
j
=150 °C
5
4
3
T
j
=25 °C
2
1
T
j
(°C)
V
TM
(V)
0
1
25
50
75
100
125
150
0
1
2
3
4
5
Figure 11.
Relative variation of critical rate of
Figure 12.
Relative variation of static dV/dt
decrease of main current versus
reapplied dV/dt (typical values)
immunity versus junction
temperature
dV/dt [T
j
] / dV/dt [
T
j
=150 °C]
(dI/dt)
c
[ (dV/dt)
c
] / Specified (dI/dt)
c
15
14
13
12
11
10
9
4
3
2
1
0
V
D
=V
R
=400 V
8
7
6
5
4
3
2
1
(dV/dt)
C
(V/µs)
T
j
(°C)
0
0.1
1.0
10.0
100.0
25
50
75
100
125
150
Figure 13.
Variation of leakage current versus
Figure 14.
Acceptable case to ambient thermal
junction temperature for different
values of blocking voltage
resistance versus repetitive peak
off-state voltage
I
DRM
/I
RRM
[Tj;
V
DRM/
V
RRM
]/I
DRM
/I
RRM
[Tj=150°C
;
6
00V]
R
th(c-a
)
(°C/W)
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
60
55
50
45
40
35
30
25
20
15
10
5
R
th(j-c)
=1.6 °C/W
T
J
=150 °C
V
DRM
=V
RRM
=600 V
V
DRM
=V
RRM
=400 V
V
DRM
=V
RRM
=200 V
V
AC PEA
K
(V)
T
j
(°C)
0
200
300
400
500
600
25
50
75
100
125
150
Doc ID 15714 Rev 1
5/10
Ordering information scheme
T810H
2
Ordering information scheme
Figure 15.
Ordering information scheme
T
8
10 H
– 6
y -TR
Triac series
Current
8 = 8 A
Sensitivity
10 = 10 mA
High temperature
Voltage
6 = 600 V
Package
2
G = D
P
A
K
T = TO-220AB
Packing
Blank =
T
u
be (D
P
A
K, TO-220AB)
-TR =
T
a
pe and reel (D
P
A
K)
2
2
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Doc ID 15714 Rev 1
T810H
Package information
3
Package information
●
●
Epoxy meets UL94, V0
Recommended torque 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
®
ECO
P
A
CK is
an ST trademark.
2
Table 6.
D
P
A
K
dimensions
Dimensions
Millimeters
Min. Typ. Max. Min. Typ. Max.
Ref.
Inches
A
4.30
4.60 0.169
2.69 0.098
0.23 0.001
0.93 0.027
0.181
0.106
0.009
0.037
A
A1 2.49
A2 0.03
E
C2
L2
B
0.70
B2 1.25 1.40
0.45
C2 1.21
D
0.048 0.055
L
L3
C
0.60 0.017
1.36 0.047
9.35 0.352
10.28 0.393
5.28 0.192
15.85 0.590
1.40 0.050
1.75 0.055
0.024
0.054
0.368
0.405
0.208
0.624
0.055
0.069
A1
B2
B
R
C
D
E
G
L
8.95
10.00
4.88
G
A2
2mm min.
FLAT ZONE
15.00
L2 1.27
L3 1.40
R
V2
0.40
0.016
V2
0°
8°
0°
8°
Figure 16.
Footprint (dimensions in mm)
16.90
10.30
5.08
1.30
3.70
8.90
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Package information
Table 7.
T810H
TO-220AB dimensions
Dimensions
Millimeters
Min. Typ. Max. Min. Typ. Max.
Ref.
Inches
A
15.20
15.90 0.598
0.625
a1
3.75
0.147
a2 13.00
10.00
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
C
B
Ø I
b2
B
L
b1 0.61
b2 1.23
F
A
I4
C
4.40
l3
c1 0.49
c2 2.40
c2
a1
l2
a2
e
F
2.40
6.20
M
c1
b1
e
ØI 3.75
I4 15.80
16.40 16.80 0.622 0.646 0.661
L
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
l2
l3
M
2.60
0.102
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T810H
Ordering information
4
Ordering information
Table 8.
Order code
T810H-6G
Ordering information
Marking
Package
Weight
Base qty
Delivery mode
T810H 6G
T810H 6G
T810H 6T
D
2
P
A
K
D
2
P
A
K
1.5 g
1.5 g
2.3 g
50
1000
50
T
u
be
T
a
pe and reel
T
u
be
T810H-6G-TR
T810H-6T
TO-220AB
5
Revision history
Table 9.
Date
15-May-2009
Document revision history
Revision
Changes
1
First issue.
Doc ID 15714 Rev 1
9/10
T810H
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10/10
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