STMicroelectronics-T810T-8FP
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T810T-8FP
8 A logic level Triac
Datasheet
−
production data
Description
$ꢀ
$ꢁ
Available in through-hole full pack package, the
T810T-8FP Triac can be used for the on/off or
phase angle control function in general purpose
AC switching. This device can be directly driven
by a microcontroller due to its 10 mA gate current
requirement. Provide UL certified insulation rated
*
at 2000 V
RMS
.
$ꢀ
Table 1. Device summary
Symbol
Value
Unit
I
T(rms)
8
A
V
V
DRM
, V
RRM
800
900
10
*
72ꢂꢀꢀꢃ)3$%
$ꢀ
V
DSM
, V
RSM
V
$ꢁ
I
GT
mA
Features
•
Medium current Triac
•
Three quadrants
•
ECOPACK
®
2 and RoHS compliant component
•
Complies with UL standards (File ref: E81734)
•
High performance Triac:
– High
T
j
family
– High
dI/dt family
– High
dV/dt family
•
Insulated package TO-220FPAB:
– Insulated
voltage: 2000 V
RMS
Applications
•
General purpose AC line load switching
•
Motor control circuits
•
Small home appliances
•
Lighting
•
Inrush current limiting circuits
•
Overvoltage crowbar protection
February 2015
DocID025736 Rev 2
1/9
This is information on a product in full production.
9
Characteristics
T810T-8FP
1
Characteristics
Table 2. Absolute maximum ratings (T
j
= 25 °C unless otherwise stated)
Symbol
Parameter
Value
Unit
I
T(rms)
On-state rms current (full sine wave)
T
c
= 113°C
F = 50 Hz
t = 20 ms
F = 60 Hz
t = 16.7 ms
t
p
= 10 ms
8
A
60
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25 °C)
I
TSM
A
63
²
²
²
I t
I t value for fusing, T
j
initial = 25 °C
24
A s
T
j
= 150 °C
600
800
V
DRM
V
RRM
,
Repetitive surge peak off-state voltage
V
T
j
= 125 °C
t
p
= 10 ms
V
DSM
,
Non repetitive surge peak off-state voltage
Critical rate of rise of on-state
900
100
V
V
RSM
dI/dt
F = 100 Hz
A/µs
current I
G
= 2 x I
G
T
, t
r
≤
100 ns
I
GM
Peak gate current
t
p
= 20 µs
T
j
= 150 °C
T
j
= 150 °C
4
1
A
P
G(AV)
Average gate power dissipation
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
– 40 to + 150
– 40 to + 150
°C
T
L
Maximum lead temperature for soldering during 10 s
Insulation rms voltage, 1 minute
260
2
°C
kV
V
ins
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise stated)
Symbol
Test conditions
Quadrant
Value
Unit
mA
V
Min.
0.5
10
(1)
I
GT
V
D
= 12 V, R
L
= 30
Ω
I – II – III
Max.
V
D
= 12 V, R
L
= 30
Ω
V
GT
V
GD
I – II – III
I – II – III
Max.
1.3
V
D
= V
DRM
, R
L
= 3.3 k
Ω
,
T
j
= 150 °C
Min.
Max.
Max.
Max.
0.2
15
V
(1)
I
H
I
T
= 500 mA
mA
mA
mA
V/µs
I – III
20
I
L
I
G
= 1.2 I
GT
II
25
T
j
= 125 °C
V
D
= V
R
= 536 V, gate open
V
D
= V
R
= 402 V, gate open
250
dV/dt
(1)
Min.
T
j
= 150 °C
T
j
= 125 °C
T
j
= 150 °C
170
6.0
V/µs
(dI/dt)c
(1)
(dV/dt)c
=
0.1 V/µs
Min.
Min.
A/ms
4.2
3.2
1.4
T
j
= 125 °C
T
j
= 150 °C
(dI/dt)c
(1)
(dV/dt)c
=
10 V/µs
A/ms
1. For
both polarities of A2 referenced to A1
2/9
DocID025736 Rev 2
T810T-8FP
Symbol
Characteristics
Table 4. Static characteristics
Test conditions
Value
Unit
(1)
V
T
I
TM
= 11.3 A, t
p
= 380 µs
Threshold voltage
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 150 °C
Max.
Max.
Max.
1.55
0.85
57
V
V
(1)
V
t0
(1)
R
d
Dynamic resistance
m
Ω
µA
5
V
DRM
= V
RRM
= 800 V
V
DRM
= V
RRM
= 600 V
Max.
Max.
I
DRM
I
RRM
0.8
2.4
mA
1. For
both polarities of A2 referenced to A1
Table 5. Thermal resistance
Parameter
Symbol
Value
Unit
R
th(j-c)
R
th(j-a)
Junction to case (AC)
3.8
60
°C/W
°C/W
Junction to ambient (DC)
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle)
Figure 2. On-state rms current versus case
temperature (full cycle)
P(W)
I
T(RMS)
(A)
10
9
8
7
6
5
4
3
2
1
0
ꢀ
°
=180
8
6
4
180°
ꢀ
2
0
I
T(RMS)
(A)
4
ꢀ
T (°C)
C
0
25
50
75
100
125
150
0
1
2
3
5
6
7
8
Figure 3. On-state rms current versus ambient
temperature (free air convection)
Figure 4. Relative variation of thermal
impedance versus pulse duration
I
T(RMS)
(A)
3.0
K = [Z
/ R
]
th th
1.0E+00
1.0E-01
1.0E-02
α
= 180°
2.5
Z
th(j-c)
Z
th(j-a)
2.0
1.5
1.0
0.5
t
(s)
p
T
a
(°C)
0.0
1.0E-01
1.0E+01
1.0E+03
1.0E-03
1.0E-02
1.0E+00
1.0E+02
0
25
50
75
100
125
150
DocID025736 Rev 2
3/9
Characteristics
T810T-8FP
Figure 5. On-state characteristics (maximum
values)
Figure 6. Surge peak on-state current versus
number of cycles
I
TM
(A)
100
I
TSM
(A)
70
60
50
40
30
20
10
0
t = 20 ms
One cycle
T
j
max :
V
to
= 0.85 V
Non repetitive
T
j
initial=25°C
R
d
= 57 m
.
W
10
T
j
= 150 °C
T
j
= 25 °C
Repetitive
T
C
= 113 °C
Number of cycles
V
TM
(V)
3.5 4.0
1
0.0
1
10
100
1000
0.5
1.0
1.5
2.0
2.5
3.0
Figure 7. Non repetitive surge peak on-state
current and corresponding values of I
2
t
Figure 8. Relative variation of gate trigger
current and gate voltage versus junction
temperature (typical values)
I
TSM
(A), I²t (A²s)
1000
100
10
I
GT,
V
GT
[T
j
] / I
GT,
V
GT
[T
j
=25 °C]
2.5
dI/dt limitation: 100 A/µs
T
j
initial=25°C
I
GT
Q1-Q2
2.0
I
TSM
I
GT
Q3
1.5
1.0
V
GT
I²t
0.5
T
j
(°C)
100
t (ms)
p
Sinusoidal pulse with width t
p
<10 ms
0.01 0.10
0.0
-50
-25
0
25
50
75
125
150
1.00
10.00
Figure 9. Relative variation of static dV/dt
Figure 10. Relative variation of holding and
immunity versus junction temperature (typical
latching current versus junction temperature
values)
(typical values)
I , I
[T ] / I , I
[T =25 °C]
j
L
j
dV/dt [T
j
] / dV/dt [T
j
=150 °C]
H
L
H
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
V
V
= V
= V
= 402 V ;
150°C
= 536 V ;
125°C
R
R
D
I
H
D
I
L
T (°C)
j
T (°C)
j
-50
-25
0
25
50
75
100
125
150
25
50
75
100
125
150
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DocID025736 Rev 2
T810T-8FP
Characteristics
Figure 11. Relative variation of critical rate of
decrease of main current (di/dt)c versus
reapplied (dV/dt)c (typical values)
Figure 12. Relative variation of critical rate of
decrease of main current (di/dt)c versus
junction temperature (typical values)
(dI/dt)
C
[T
j
] / (dI/dt)
c
[T
j
=150 °C]
8
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
3
(dV/dt)c = 10 V/µs
7
°
T =
150 C
j
6
5
4
3
2
1
2
1
0
°
T =
125 C
j
(dV/dt)c (V/µs)
T (°C)
j
0
25
0.1
1.0
10.0
100.0
50
75
100
125
150
Figure 13. Relative variation of leakage current versus junction temperature for
different values of blocking voltage (typical values)
I ,
I
DRM RRM
@ [T ; V
j
, V
DRM RRM
DRM RRM
] / I
, I
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
V
DRM
=V
RRM
=800 V
V
DRM
=V
RRM
=600 V
V
DRM
=V
RRM
=400 V
*
I
, I
@:
DRM RRM
[T max = 125 °C; 800 V]
j
[T max = 150 °C; 600 V]
j
T (°C)
j
25
50
75
100
125
150
DocID025736 Rev 2
5/9
Package information
T810T-8FP
2
Package information
•
•
•
Epoxy meets UL94, V0
Lead-free package
Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
Figure 14. TO-220FPAB dimension definitions
A
B
H
Dia
L6
L5
L2
L4
L7
L3
D
F1
F2
F
E
G1
G
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DocID025736 Rev 2
T810T-8FP
Package information
Table 6. TO-220FPAB dimension values
Dimensions
Ref.
Millimeters
Inches
Max.
Min.
Max.
Min.
A
B
4.4
2.5
4.6
2.7
0.173
0.098
0.098
0.018
0.030
0.045
0.045
0.195
0.094
0.393
0.181
0.106
D
2.5
2.75
0.70
1
0.108
E
0.45
0.75
1.15
1.15
4.95
2.4
0.027
F
0.039
F1
F2
G
1.70
1.70
5.20
2.7
0.067
0.067
0.205
G1
H
0.106
10
10.4
0.409
L2
L3
L4
L5
L6
L7
Dia.
16 Typ.
0.63 Typ.
1.205
28.6
9.8
30.6
10.6
3.6
1.126
0.386
0.114
0.626
0.354
0.118
0.417
2.9
0.142
15.9
9.00
3.00
16.4
9.30
3.20
0.646
0.366
0.126
DocID025736 Rev 2
7/9
Ordering information
T810T-8FP
3
Ordering information
Figure 15. Ordering information scheme
T
8
10 T
–
8
FP
Triac
Current
8 = 8 A
Gate sensitivity
10 = 10 mA
Specific application
T = Increased (dI/dt)c and dV/dt producing reduced I
TSM
Voltage (V
8 = 800 V
, V
)
DRM RRM
Package
FP = TO-220FPAB
Table 7. Ordering information
Order code
Marking
T810T-8FP
Package
Weight
Base qty
Delivery mode
T810T-8FP
TO-220FPAB
2.0 g
50
Tube
4
Revision history
Table 8. Document revision history
Changes
Date
Revision
05-Feb-2014
12-Feb-2015
1
2
Initial release.
8/9
DocID025736 Rev 2
T810T-8FP
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