STMicroelectronics-T830-8FP
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T830-8FP
8 A Snubberless™
T
r
iac
Datasheet
production data
Features
A2
■
High static and dynamic commutation
■
Package is RoHS (2002/95/EC) compliant
■
High surge current
G
A1
®
■
ECOPACK 2
compliant component
■
Complies with UL standards (File ref: E81734)
Applications
G
A2
A1
■
General purpose AC switching
■
Motor control circuits in power tools
■
Home appliances
TO-220F
P
A
B
(T830-8FP)
■
Lighting
Description
Table 1.
Symbol
Device summary
The T830-8FP
T
r
iac can be used for the on/off
function in general purpose AC switching where
high commutation capability is required.
Value
Unit
I
T(rms)
8
A
V
Provides insulation rated at 1500 V rms.
V
DRM
, V
RRM
800
900
30
V
DSM
, V
RSM
I
GT
V
mA
September 2012
Doc ID 023366 Rev 1
1/9
This is information on a product in full production.
9
Characteristics
T830-8FP
1
Characteristics
Table 2.
Symbol
Absolute ratings (limiting values)
Parameter
Value
Unit
I
T(rms)
I
TSM
On-state rms current (full sine wave)
T
c
= 95 °C
8
A
F = 50 Hz
t = 20 ms
F = 60 Hz
t = 16.7 ms
t
p
= 10 ms
80
84
42
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25 °C)
A
²
²
²
I t
I t Value for fusing
A s
Critical rate of rise of on-state
current I
G
= 2 x I
G
T
, t
r
100 ns
T
j
= 125 °C
dI/dt
F = 120 Hz
100
900
A/µs
V
V
DSM
V
RSM
,
Non repetitive surge peak on-state
voltage
t
p
= 10 ms
T
j
= 25 °C
I
GM
Peak gate current
t
p
= 20 µs
T
j
= 125 °C
T
j
= 125 °C
4
1
A
P
G(AV)
Average gate power dissipation
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
– 40 to + 150
– 40 to + 125
°C
Lead temperature for soldering during 10 s
(at 4 mm from case)
T
L
260
°C
V
V
ins
Insulation rms voltage, 1 minute
1500
Table 3.
Symbol
Electrical characteristics (T
= 25 °C, unless otherwise specified)
j
Test conditions
Quadrant
Value
Unit
(1)
I
GT
30
1.3
0.2
50
mA
V
V
D
= 12
V
,
R
L
= 30
I – II – III
I – II – III
Max.
V
GT
V
GD
V
D
= V
DRM
, R
L
= 3.3 k
T
j
= 125 °C
I
T
= 250 mA
Min.
Max.
Max.
Min.
V
(2)
I
H
mA
mA
V/µs
I
L
I
G
= 1.2 I
GT
I – II – III
60
T
j
= 125 °C
dV/dt
(dI/dt)c
V
D
= 67%V
DRM
, gate open
2500
T
j
= 125 °C
Without snubber
Min.
10.0
A/ms
1. Minimum
I
GT
is guaranteed at 5% of I
GT
max.
2. For
both polarities of A2 referenced to A1.
2/9
Doc ID 023366 Rev 1
T830-8FP
Characteristics
Table 4.
Symbol
Static characteristics
Test conditions
Value
Unit
(1)
V
T
I
TM
= 11 A, t
p
= 380 µs
Threshold voltage
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
Max.
Max.
Max.
1.55
0.85
40
5
V
V
(1)
V
t0
(1)
R
d
Dynamic resistance
m
µA
mA
I
DRM
I
RRM
V
DRM
= V
RRM
Max.
1
1. For
both polarities of A2 referenced to A1.
Table 5.
Symbol
Thermal resistance
Parameter
Value
Unit
R
th(j-c)
R
th(j-a)
Junction to case (AC)
Junction to ambient
3.5
60
°C/W
°C/W
Figure 1.
Maximum power dissipation versus
Figure 2.
rms on-state current
On-state rms current versus case
temperature
P(W)
10
I
T(RMS)
(A)
10
α
=18
0
°
α
=180°
8
6
4
2
0
8
6
4
2
180°
T
C
(°C)
I
T(RMS)
(A)
0
0
25
50
75
100
125
0
2
4
6
8
Figure 3.
On-state rms current versus
ambient temperature
Figure 4.
Relative variation of thermal
impedance versus pulse duration
(free air convection)
K = [Z
/ R
th
]
th
I
T(RMS)
(A)
3.0
1.0E+00
1.0E-01
1.0E-02
α
= 180°
Z
th(j-c)
2.5
2.0
1.5
1.0
0.5
Z
th(j-a)
T
a
(°C)
t
(s)
p
0.0
0
25
50
75
100
125
1.0E-03 1.0E-02 1.0E-01 1.0E+00
1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05
Doc ID 023366 Rev 1
3/9
Characteristics
T830-8FP
Figure 5.
Relative variation of gate trigger
Figure 6.
Relative variation of gate trigger
current versus junction
voltage versus junction
temperature (typical values)
temperature (typical values)
I
GT
[T
j
] / I
GT
[T
j
= 25 °C]
V
GT
[T
j
] / V
GT
[T
j
= 25 °C]
2.0
1.5
1.0
0.5
0.0
1.5
1.0
0.5
0.0
I
GT
Q3
I
GT
Q2
I
GT
Q1
T
C
(°C)
T
C
(°C)
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Figure 7.
Relative variation of holding and
latching current versus junction
temperature (typical values)
Figure 8.
Surge peak on-state current versus
number of cycles
I
H
, I
L
[T
j
] / I
H
, I
L
[T
j
= 25 °C]
I
TSM
(A)
100
1.6
1.2
0.8
0.4
0.0
I
L
t = 20 ms
One cycle
I
H
Non repetitive
T
j
initial = 25 °C
50
Repetitive
T
c
= 95 °C
T
j
(°C)
100
Number of cycles
0
-50
-25
0
25
50
75
125
1
10
100
1000
Figure 9.
Non repetitive surge peak on-state
Figure 10.
On-state characteristics (maximum
current and corresponding value of
I T
values)
2
I
TM
(A)
I
TSM(
A), I²t (A²s)
100
10
1
10000
1000
100
T
j
initial = 25 °C
dl/dt limitation: 100 A / µs
T
j
max:
V
to
= 0.85 V
R
d
= 40 m
Ω
I
TSM
T
j
=125°C
T
j
=25°C
I²t
sinusoidal pulse with width t
p
<10 ms
t
p
(ms)
V
TM
(V)
10
0.01
0.10
1.00
10.00
0
1
2
3
4
5
4/9
Doc ID 023366 Rev 1
T830-8FP
Characteristics
Figure 11.
Relative variation of critical rate of
Figure 12.
Relative variation of static dV/dt
decrease of main current versus
junction temperature
immunity versus junction
temperature (typical values)
dV/dt [T
j
] / dV/dt [T
j
=125 °C]
(dl / dt)
[T
j
] / (dl / dt)
[T
j
= 125 °C]
c
c
7
6
5
4
3
2
1
0
2
1
0
V
D
=V
R
=537V
(dV/dt) > 5KV/µs
T
j
(°C)
T
j
(°C)
25
50
75
100
125
25
50
75
100
125
Figure 13.
Relative variation of critical rate of
Figure 14.
Relative variation of leakage
decrease of main current versus
reapplied dV/dt (typical values)
current versus junction
temperature
[T =
125 °C; 800 V]
I
DRM
/I
RRM
[T
j
;
V
DRM
/ V
RRM
] / I
DRM
/I
RRM
j
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.5
1.0
0.5
0.0
T
j
=125 °C
V
DRM
= V
RRM
= 800 V
V
DRM
= V
RRM
= 600 V
V
DRM
= V
RRM
= 400 V
(dV/dt)c (V/µs)
T
j
(°C)
1.0
10.0
100.0
25
50
75
100
125
Doc ID 023366 Rev 1
5/9
Ordering information scheme
T830-8FP
2
Ordering information scheme
Figure 15.
Ordering information scheme
T
8
30
–
8
FP
Triac
Current
8 = 8 A
Sensitivity
30 = 30 mA
Voltage
8 = 800 V
Package
FP = TO-220F
P
A
B
6/9
Doc ID 023366 Rev 1
T830-8FP
Package information
3
Package information
●
●
Epoxy meets UL94, V0
Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
®
ECO
P
A
CK is
an ST trademark.
Table 6.
TO-220F
P
A
B Dimensions
Dimensions
Millimeters
Ref.
Inches
Min. Max.
Min.
Max.
A
B
4.4
2.5
4.6
2.7
0.173
0.098
0.098
0.018
0.030
0.045
0.045
0.195
0.094
0.393
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.205
0.106
0.409
A
B
H
D
2.5
2.75
0.70
1
E
0.45
0.75
1.15
1.15
4.95
2.4
Dia
F
F1
F2
G
1.70
1.70
5.20
2.7
L6
L5
L2
L3
L7
G1
H
D
F1
F2
10
10.4
L4
L2
L3
L4
L5
L6
L7
Dia.
16
T
y
p.
0.63
T
y
p.
28.6
9.8
30.6
10.6
3.6
1.126
0.386
0.114
0.626
0.354
0.118
1.205
0.417
0.142
0.646
0.366
0.126
F
E
G1
G
2.9
15.9
9.00
3.00
16.4
9.30
3.20
Doc ID 023366 Rev 1
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Ordering information
T830-8FP
4
Ordering information
Table 7.
Order code
T830-8FP
Ordering information
Marking
Package
TO-220F
P
A
B
Weight
Base qty
Delivery mode
T830-8FP
2.0 g
50
T
u
be
5
Revision history
Table 8.
Date
24-Sep-2012
Document revision history
Revision
Changes
1
Initial release.
8/9
Doc ID 023366 Rev 1
T830-8FP
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Doc ID 023366 Rev 1
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