STMicroelectronics-T835H-6I

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STMicroelectronics-T835H-6I
T835H, T850H  
High temperature 8 A Snubberless™ Triacs  
Datasheet – production data  
Applications  
Especially designed to operate in high power  
density or universal motor applications such as  
vacuum cleaner and washing machine drum  
motor, these 8 A Triacs provide a very high  
switching capability up to 150 °C junction  
temperatures.  
A2  
A2  
The heatsink can be reduced, compared to  
traditional Triac, according to the high  
performance at given junction temperatures.  
G
A2  
A1  
G
A2  
A1  
Description  
Available in through-hole or surface mount  
packages, these Triacs series are suitable for  
general purpose mains power ac switching.  
TO-220AB  
TO-220AB Ins.  
A2  
By using an internal ceramic pad, they provide  
voltage insulation (rated at 2500 V

RMS

).  
Table 1: Device summary  
G
A2  
A1  
Symbol  
Value  
8
Unit  
A
D²PAK  
I

T(RMS)  

V

DRM

/V

RRM  

I

GT  

600  
V
Features  
35 or 50  
mA  
Medium current Triac  
150 °C max. T

j

turn-off commutation  
Low thermal resistance with clip bonding  
Very high 3 quadrant commutation capability  
Packages are RoHS (2002/95/EC) compliant  
UL certified (ref. file E81734)  
March 2017  
DocID13564 Rev 3  
1/12  
This is information on a product in full production.  

T835H, T850H  
1
Characteristics  
Table 2: Absolute ratings (limiting values)  
Symbol  
Parameter  
Value  
Unit  
D²PAK,  
T

C

= 136 °C  
RMS on-state current  
(full sine wave)  
TO-220AB  
TO-220AB Ins.  
f = 50 Hz  
I

T(RMS)  

8
A
T

C

= 123 °C  
t

p

= 20 ms  
Non repetitive surge peak  
on-state current  
80  
84  
42  
I

TSM  

A
f = 60 Hz  
t

p

= 16.7 ms  
t

p

= 10 ms  
(full cycle, T

j

initial = 25 °C)  
I²t  
I²t value for fusing  
A²s  
A/µs  
Critical rate of rise of on-state  
current  
f = 50 Hz  
dl/dt  
T

j

= 150 °C  
T

j

= 25 °C  
50  
I

G

= 2 x I

GT

, tr ≤ 100 ns  
V

DSM  

V

RSM  

/
Non repetitive surge peak off-  
state voltage  
V

DRM

/V

RRM  

+ 100  
t

p

= 10 ms  
t

p

= 20 µs  
V
I

GM  

Peak forward gate current  
T

j

= 150 °C  
T

j

= 150 °C  
4
A
P

G(AV)  

T

stg  

T

j  

Average gate power dissipation  
1
W
°C  
°C  
Storage junction temperature range  
Operating junction temperature range  
-40 to +150  
-40 to +150  
Table 3: Electrical characteristics (T

j

= 25 °C unless otherwise specified)  
Value  
Unit  
Symbol  
Test conditions  
Quadrant  
T835H T850H  
Max.  
Max.  
Min.  
35  
50  
mA  
V
V

D

= 12 V, R

L

= 33 Ω  
I – II – III  
I – II – III  
V

GT  

V

GD  

1.0  
V

D

= V

DRM

, R

L

= 3.3 kΩ  
0.15  
V
75  
60  
I

T

= 500 mA  
Max.  
35  
50  
mA  
I – III  
II  
I

L  

I

G

= 1.2 x I

GT  

Max.  
mA  
110  
1500  
14  
80  
V

D

= 2/3 x V

DRM

, gate open  
T

j

= 150 °C  
T

j

= 150 °C  
Min.  
Min.  
1000  
11  
V/µs  
(dI/dt)

Without snubber  
A/ms  
Notes:  

(1)

minimum I

GT

is guaranted at 20% of I

GT

max.  

(2)

for both polarities of A2 referenced to A1.  
2/12  
DocID13564 Rev 3  
 
 
 

T835H, T850H  
Table 4: Static characteristics  
Test conditions  
Symbol  
Value  
1.5  
0.80  
52  
Unit  
V
Max.  
Max.  
Max.  
Max.  
Max.  
Max.  
Max.  
I

TM

= 11 A, t

p

= 380 μs  
T

j

= 25 °C  
T

j

= 150 °C  
T

j

= 150 °C  
T

j

= 25 °C  
Threshold voltage  
Dynamic resistance  
V
m
Ω  
µA  
5
V

DRM

= V

RRM  

T

j

= 150 °C  
T

j

= 150 °C  
T

j

= 150 °C  
3.1  
2.5  
2.0  
I

DRM

/ I

V

D

/V

R

= 400 V (at peak mains voltage)  
V

D

/V

R

= 200 V (at peak mains voltage)  
mA  
Notes:  

(1)

for both polarities of A2 referenced to A1  

(2)

t

p

= 380 μs  
Table 5: Thermal parameters  
Parameter  
Symbol  
Value  
1.85  
3.7  
Unit  
D²PAK, TO-220AB  
TO-220AB Ins.  
D²PAK  
R

th(j-c)  

Junction to case (AC)  
Junction to ambient (S

cu

= 1 cm

2

)  
Junction to ambient  
45  
°C/W  
R

th(j-a)  

TO-220AB,  
60  
TO-220AB Ins.  
DocID13564 Rev 3  
3/12  
 
 

T835H, T850H  
1.1  
Characteristics (curves)  
Figure 1: Maximum power dissipation versus  
on-state RMS current (full cycle)  
Figure 2: On-state RMS current versus case  
temperature (full cycle)  
I
(A)  
P(W)  
T(RMS)  
10  
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
TO-220AB/D²
P
A
K  
α
=180 °  
TO-220AB  
Insulated  
180°  
α
=180 °  
I

T(RMS)

(A)  
T

C

(°C)  
75  
0
1
2
3
4
5
6
7
8
0
25  
50  
100  
125  
150  
Figure 4: Variation of thermal impedance versus  
pulse duration  
Figure 3: On-state RMS current versus ambient  
temperature  
Z
(°C/W)  
I
(A)  
T(RMS)  
th  
1,0E+00  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
α
=180 °  
D²
P
A
K  
S

CU

=1 cm²  
Epoxy printed circuit board FR4,  
copper thickness = 35 µm  
Z

th(j-c)  

1,0E-01  
1,0E-02  
1,0E-03  
Z

th(j-a)  

t

P

(s)  
1,0E-02 1,0E-01 1,0E+00
 
1,0E+01 1,0E+02 1,0E+03  
T

am
b

(°C)  
0
25  
50  
75  
100  
125  
150  
1,0E-03  
Figure 6: Surge peak on-state current versus  
number of cycles  
Figure 5: On-state characteristics  
(maximum values)  
I
(A)  
TM  
100  
T

j

= 150 °C  
10  
T

j

= 25°C  
T

j

max. :  
V

t0

= 0.80 V  
R

d

= 52 m
Ω  
V

TM

(V)  
2.0 2.5  
1
0.0  
0.5  
1.0  
1.5  
3.0  
3.5  
4.0  
4.5  
4/12  
DocID13564 Rev 3  

T835H, T850H  
Figure 7: Non-repetitive surge peak on-state  
Figure 8: Relative variation of I

GT

, I

H

, I

L

versus  
junction temperature (typical values)  
current for a sinusoidal pulse  
Figure 9: Relative variation of critical rate of  
decrease of main current (dI/dt)c versus reapplied  
(dV/dt)c  
Figure 10: Relative variation of critical rate of  
decrease of main current versus junction  
temperature  
(dl/dt)c[(T ] / (dl/dt)c [T
 
= 150 °C]  
(dl/dt)c[(dV/dt)c] / specified (dl/dt)c  
2.0  
j
j
8
7
6
5
4
3
2
1
0
typical values  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
T

j

(°C)  
(dV/dt
)

C

(V/µs)  
0.0  
0.1  
1.0  
10.0  
100.0  
25  
50  
75  
100  
125  
150  
Figure 11: Leakage current versus junction  
temperature for different values of blocking  
voltage (typical values)  
Figure 12: Variation of thermal resistance junction  
to ambient versus copper surface under tab  
R

th(j-a)

(°C/W)  
80  
70  
60  
50  
40  
30  
20  
Epoxy printed board FR4, e
 
= 35 µm  
CU  
10  
S

Cu

(cm²)  
0
0
5
10  
15  
20  
25  
30  
35  
40  
DocID13564 Rev 3  
5/12  
 

T835H, T850H  
2
Package information  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK

®  

specifications, grade definitions and product status are available at:

.  
ECOPACK

®

is an ST trademark.  
Epoxy meets UL94, V0  
Lead-free package leads  
Cooling method: by conduction (C)  
2.1  
D²PAK package information  
Figure 13: D²PAK package outline  
6/12  
DocID13564 Rev 3  

T835H, T850H  
Table 6: D²PAK package mechanical data  
Dimensions  
Ref.  
Millimeters  
Inche

Typ.  
Min.  
4.30  
2.49  
0.03  
0.70  
1.25  
0.45  
1.21  
8.95  
7.50  
1.30  
10.00  
8.30  
6.85  
4.88  
15  
Typ.  
Max.  
4.60  
2.69  
0.23  
0.93  
Min.  
Max.  
A
A1  
A2  
B
0.1693  
0.0980  
0.0012  
0.0276  
0.0492  
0.0177  
0.0476  
0.3524  
0.2953  
0.0512  
0.3937  
0.3268  
0.2697  
0.1921  
0.5906  
0.0500  
0.0551  
0.1811  
0.1059  
0.0091  
0.0366  
B2  
C
1.40  
0.0551  
0.60  
1.36  
9.35  
8.00  
1.70  
10.28  
8.70  
7.25  
5.28  
15.85  
1.40  
1.75  
0.0236  
0.0535  
0.3681  
0.3150  
0.0669  
0.4047  
0.3425  
0.2854  
0.2079  
0.6240  
0.0551  
0.0689  
C2  
D
D1  
D2  
E
E1  
E2  
G
L
L2  
L3  
R
1.27  
1.40  
0.0157  
0.40  
V2  
0°  
8°  
0°  
8°  
Notes:  

(1)

Dimensions in inches are given for reference only  
DocID13564 Rev 3  
7/12  
 

T835H, T850H  
Figure 14: D²PAK recommended footprint (dimensions are in mm)  
8/12  
DocID13564 Rev 3  

T835H, T850H  
2.2  
TO-220AB (NIns. and Ins.) package information  
Figure 15: TO-220AB (NIns. and Ins.) package outline  
DocID13564 Rev 3  
9/12  

T835H, T850H  
Table 7: TO-220AB (NIns. and Ins.) package mechanical data  
Dimensions  
Ref.  
Millimeters  
Typ.  
Inche

Typ.  
Min.  
Max.  
Min.  
Max.  
A
a1  
a2  
B
15.20  
15.90  
0.5984  
0.6260  
3.75  
0.1476  
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.73  
2.65  
1.14  
1.14  
15.80  
14.00  
10.40  
0.88  
1.32  
4.60  
0.70  
2.72  
2.70  
6.60  
3.88  
2.95  
1.70  
1.70  
16.80  
0.5118  
0.3937  
0.0240  
0.0484  
0.1732  
0.0193  
0.0945  
0.0945  
0.2441  
0.1469  
0.1043  
0.0449  
0.0449  
0.6220  
0.5512  
0.4094  
0.0346  
0.0520  
0.1811  
0.0276  
0.1071  
0.1063  
0.2598  
0.1528  
0.1161  
0.0669  
0.0669  
0.6614  
b1  
b2  
C
c1  
c2  
e
F
I
L
I2  
I3  
I4  
16.40  
2.6  
0.6457  
0.1024  
M
Notes:  

(1)

Inch dimensions are for reference only.  
10/12  
DocID13564 Rev 3  
 

T835H, T850H  
3
Ordering information  
Figure 16: Ordering information scheme  
T
8
xx H
 
– 6
 
y -TR  
Triac series  
Current  
8 = 8 A  
Sensitivity  
35 = 35 mA  
50 = 50 mA  
High temperature  
V
o
ltage  
6 = 600 V  
Package  
G = D²PAK  
T = TO-220AB  
I = TO-220AB Ins  
Packing  
Blank =
T
u
be (D²PAK, TO-220AB)  
-TR =
T
a
pe and reel (D²PAK)  
Table 8: Ordering information  
Order code  
T8xxH-6G  
T8xxH-6G-TR  
T8xxH-6T  
Marking  
T8xxH 6G  
T8xxH 6G  
T8xxH 6T  
T8xxH 6I  
Package  
D²PAK  
Weight  
1.5 g  
1.5 g  
2.3 g  
2.3 g  
Base qty.  
50  
Delivery mode  
Tube  
Tape and reel  
Tube  
D²PAK  
1000  
50  
TO-220AB  
TO-220AB Ins.  
T8xxH-6I  
50  
Tube  
4
Revision history  
Table 9: Document revision history  
Date  
Revision Changes  
17-Apr-2007  
19-Sep-2011  
1
2
First issue.  
Updated:
Features
,
Description
,
Figure 2
,
Table 2
and
4
.  
Minor text changes. Updated

30-Mar-2017  
3
DocID13564 Rev 3  
11/12  

T835H, T850H  
IMPORTANT NOTICE
–
PLEASE READ CAREFULLY  
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, and  
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der  
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.  
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–
All rights reserved  
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