STMicroelectronics-T850H-6T

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STMicroelectronics-T850H-6T
T835H, T850H  
High temperature 8 A Snubberless™ Triacs  
Datasheet – production data  
Applications  
A2  
A1  
Especially designed to operate in high power  
density or universal motor applications such as  
vacuum cleaner and washing machine drum  
motor, these 8 A Triacs provide a very high  
switching capability up to 150 °C junction  
temperatures.  
G
A2  
The heatsink can be reduced, compared to  
traditional Triac, according to the high  
performance at given junction temperatures.  
G
G
A2  
A1  
A2  
A1  
Description  
Available in through-hole or surface mount  
packages, these Triacs series are suitable for  
general purpose mains power ac switching.  
TO-220AB  
TO-220AB Ins.  
A2  
By using an internal ceramic pad, they provide  
voltage insulation (rated at 2500 V

RMS

).  
G
A2  
A1  
Table 1: Device summary  
D²PAK  
Symbol  
I

T(RMS)  

Value  
8
Unit  
A
V

DRM

/V

RRM  

I

GT  

600  
V
Features  
35 or 50  
mA  
Medium current Triac  
150 °C max. T

j

turn-off commutation  
Low thermal resistance with clip bonding  
Very high 3 quadrant commutation capability  
Packages are RoHS (2002/95/EC) compliant  
UL certified (ref. file E81734)  
February 2018  
DocID13564 Rev 4  
1/13  
This is information on a product in full production.  

Characteristics  
T835H, T850H  
1
Characteristics  
Table 2: Absolute ratings (limiting values)  
Symbol  
Parameter  
Value  
Unit  
D²PAK,  
T

C

= 133 °C  
RMS on-state current  
(full sine wave)  
TO-220AB  
TO-220A Ins.  
f = 50 Hz  
I

T(RMS)  

8
A
T

C

= 116 °C  
t

p

= 20 ms  
Non repetitive surge peak  
on-state current  
(full cycle, T

j

initial = 25 °C)  
80  
84  
42  
I

TSM  

I²t  
A
f = 60 Hz  
t

p

= 16.7 ms  
t

p

= 10 ms  
I²t value for fusing  
A²s  
A/µs  
Critical rate of rise of  
on-state current  
I

G

= 2 x I

GT

, t

r

≤ 100 ns  
f = 50 Hz  
dl/dt  
T

j

= 150 °C  
T

j

= 25 °C  
50  
V

DSM  

V

RSM  

/
Non repetitive surge peak  
off-state voltage  
V

DRM

/V

RRM  

+ 100  
t

p

= 10 ms  
t

p

= 20 µs  
V
I

GM  

Peak forward gate current  
T

j

= 150 °C  
T

j

= 150 °C  
4
A
P

G(AV)  

T

stg  

T

j  

Average gate power dissipation  
Storage junction temperature range  
Operating junction temperature range  
1
W
°C  
°C  
-40 to +150  
-40 to +150  
Table 3: Electrical characteristics (T

j

= 25 °C unless otherwise specified)  
Value  
Unit  
Symbol  
Test Conditions  
Quadrant  
T835H  
T850H  
50  
35  
mA  
mA  
V
V

D

= 12 V, R

L

= 33 Ω  
I – II – III  
I – II – III  
Max.  
V

GT  

V

GD  

1.0  
V

D

= V

DRM

, R

L

= 3.3 kΩ  
Min.  
0.15  
I

T

= 500 mA  
Max.  
35  
50  
75  
60  
mA  
I – III  
II  
I

L  

I

G

= 1.2 x I

GT  

Max.  
mA  
80  
110  
1500  
14  
V

D

= 2/3 x V

DRM

, gate open  
Without snubber  
T

j

= 150 °C  
T

j

= 150 °C  
Min.  
Min.  
1000  
11  
V/µs  
A/ms  
Notes:  

(1)

minimum I

GT

is guaranted at 20% of I

GT

max.  

(2)

for both polarities of A2 referenced to A1.  
2/13  
DocID13564 Rev 4  
 
 
 

T835H, T850H  
Characteristics  
Table 4: Static characteristics  
Test conditions  
Symbol  
Value  
Unit  
V
Max.  
Max.  
Max.  
I

TM

= 11 A, t

p

= 380 μs  
T

j

= 25 °C  
T

j

= 150 °C  
T

j

= 150 °C  
T

j

= 25 °C  
1.5  
0.80  
52  
Threshold voltage  
Dynamic resistance  
V
mΩ  
µA  
Max.  
Max.  
Max.  
Max.  
5
V

DRM

= V

RRM  

T

j

= 150 °C  
T

j

= 150 °C  
T

j

= 150 °C  
3.1  
2.5  
2.0  
I

DRM

/ I

RRM  

V

D

/V

R

= 400 V (at peak mains voltage)  
V

D

/V

R

= 200 V (at peak mains voltage)  
mA  
Notes:  

(1)

for both polarities of A2 referenced to A1  
Table 5: Thermal parameters  
Parameter  
Symbol  
Value  
1.85  
3.7  
Unit  
D²PAK, TO-220AB  
TO-220AB Ins.  
R

th(j-c)  

Junction to case (AC)  
°C/W  
Junction to ambient (S

cu

= 1 cm

2

, D²PAK)  
Junction to ambient  
D²PAK  
45  
R

th(j-a)  

TO-220AB, TO-220AB Ins.  
60  
DocID13564 Rev 4  
3/13  
 
 

Characteristics  
T835H, T850H  
1.1  
Characteristics (curves)  
Figure 2: On-state RMS current versus case  
temperature (full cycle)  
Figure 1: Maximum power dissipation versus on-  
state RMS current (full cycle)  
I
(A)  
P(W)  
10  
T(RMS)  
9
8
7
6
5
4
3
2
1
0
TO-220AB/D²
P
A
K  
α
=180 °  
9
TO-220AB  
Insulated  
8
7
6
5
4
3
2
180°  
α
=180 °  
1
T

C

(°C)  
I

T(RMS)

(A)  
0
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
Figure 3: On-state RMS current versus ambient  
temperature  
Figure 4: Variation of thermal impedance versus  
pulse duration  
Z
(°C/W)  
I
(A)  
T(RMS)  
th  
1,0E+00  
1,0E-01  
1,0E-02  
1,0E-03  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
α
=180 °  
D²
P
A
K  
S

CU

=1 cm²  
Epoxy printed circuit board FR4,  
copper thickness = 35 µm  
Z

th(j-c)  

Z

th(j-a)  

t

P

(s)  
1,0E-02 1,0E-01 1,0E+00
 
1,0E+01 1,0E+02 1,0E+03  
T

am
b

(°C)  
0
25  
50  
75  
100  
125  
150  
1,0E-03  
Figure 5: On-state characteristics (maximum  
values)  
Figure 6: Surge peak on-state current versus  
number of cycles  
I
(A)  
I
(A)  
TM  
TSM  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
t=20ms  
Non repetitive  
T

j

initial = 2
5
°
C  
One cycle  
T

j

= 150 °C  
10  
Repetitive  
T

c

=116 °C  
T

j

= 25°C  
T

j

max. :  
V

t0

= 0.80 V  
R

d

= 52 m
Ω  
Number of cycles  
V

TM

(V)  
2.0 2.5  
1
1
10  
100  
1000  
0.0  
0.5  
1.0  
1.5  
3.0  
3.5  
4.0  
4.5  
4/13  
DocID13564 Rev 4  
 
 

T835H, T850H  
Characteristics  
Figure 7: Non-repetitive surge peak on-state  
Figure 8: Relative variation of I

GT

,I

H

, I

L

vs junction  
temperature (typical values)  
current for a sinusoidal pulse  
Figure 9: Relative variation of critical rate of  
decrease of main current (dI/dt)c versus reapplied  
(dV/dt)c  
Figure 10: Relative variation of critical rate of  
decrease of main current versus junction  
temperature  
(dl/dt)c[(T ] / (dl/dt)c [T
 
= 150 °C]  
(dl/dt)c[(dV/dt)c] / specified (dl/dt)c  
2.0  
j
j
8
7
6
5
4
3
2
1
0
typical values  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
T

j

(°C)  
(dV/dt
)

C

(V/µs)  
0.0  
0.1  
1.0  
10.0  
100.0  
25  
50  
75  
100  
125  
150  
Figure 12: Variation of thermal resistance junction  
to ambient versus copper surface under tab  
Figure 11: Leakage current versus junction  
temperature for different values of blocking  
voltage (typical values)  
R

th(j-a)

(°C/W)  
80  
D²PAK  
70  
60  
50  
40  
30  
20  
10  
S

CU

(cm²)  
0
0
5
10  
15  
20  
25  
30  
35  
40  
DocID13564 Rev 4  
5/13  
 

Package
information  
T835H, T850H  
2
Package information  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK

®  

specifications, grade definitions and product status are available at:

.  
ECOPACK

®

is an ST trademark.  
Epoxy meets UL94, V0  
Lead-free package leads  
Cooling method: by conduction (C)  
2.1  
D²PAK package information  
Figure 13: D²PAK package outline  
6/13  
DocID13564 Rev 4  

T835H, T850H  
Package
information  
Table 6: D²PAK package mechanical data  
Dimensions  
Ref.  
Millimeters  
Inche

Min.  
4.30  
2.49  
0.03  
Typ.  
Max.  
4.60  
2.69  
0.23  
Min.  
Typ.  
Max.  
A
A1  
A2  
A3  
b
0.1693  
0.0980  
0.0012  
0.1811  
0.1059  
0.0091  
0.0098  
0.25  
0.70  
1.25  
0.45  
1.21  
8.95  
7.50  
1.30  
2.54  
10.00  
8.30  
6.85  
4.88  
15  
0.93  
1.7  
0.0276  
0.0492  
0.0177  
0.0476  
0.3524  
0.2953  
0.0512  
0.1  
0.0366  
0.0669  
0.0236  
0.0535  
0.3681  
0.3150  
0.0669  
b2  
c
0.60  
1.36  
9.35  
8.00  
1.70  
c2  
D
D1  
D2  
e
E
10.28  
8.70  
7.25  
5.28  
15.85  
2.28  
1.40  
1.75  
0.3937  
0.3268  
0.2697  
0.1921  
0.5906  
0.0701  
0.0500  
0.0551  
0.4047  
0.3425  
0.2854  
0.2079  
0.6240  
0.0898  
0.0551  
0.0689  
E1  
E2  
G
H
L
1.78  
1.27  
1.40  
L2  
L3  
R
0.0157  
0.40  
V2  
0°  
8°  
0°  
8°  
Notes:  

(1)

Dimensions in inches are given for reference only  
DocID13564 Rev 4  
7/13  
 

Package
information  
T835H, T850H  
Figure 14: D²PAK recommended footprint (dimensions are in mm)  
8/13  
DocID13564 Rev 4  

T835H, T850H  
Package
information  
2.2  
TO-220AB Insulated package information  
Figure 15: TO-220AB Insulated package outline  
DocID13564 Rev 4  
9/13  

Package
information  
T835H, T850H  
Table 7: TO-220AB Insulated package mechanical data  
Dimensions  
Ref.  
Millimeters  
Typ.  
Inche

Min.  
Max.  
Min.  
Typ.  
Max.  
A
a1  
a2  
B
15.20  
15.90  
0.5984  
0.6260  
3.75  
0.1476  
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.73  
2.65  
1.14  
1.14  
15.80  
14.00  
10.40  
0.88  
1.32  
4.60  
0.70  
2.72  
2.70  
6.60  
3.88  
2.95  
1.70  
1.70  
16.80  
0.5118  
0.3937  
0.0240  
0.0484  
0.1732  
0.0193  
0.0945  
0.0945  
0.2441  
0.1469  
0.1043  
0.0449  
0.0449  
0.6220  
0.5512  
0.4094  
0.0346  
0.0520  
0.1811  
0.0276  
0.1071  
0.1063  
0.2598  
0.1528  
0.1161  
0.0669  
0.0669  
0.6614  
b1  
b2  
C
c1  
c2  
e
F
I
L
I2  
I3  
I4  
M
16.40  
2.6  
0.6457  
0.1024  
Notes:  

(1)

Inch dimensions are for reference only.  
10/13  
DocID13564 Rev 4  
 

T835H, T850H  
Ordering
information  
3
Ordering information  
Figure 16: Ordering information scheme  
T
8
xx H
 
– 6
 
y -TR  
Triac series  
Current  
8 = 8 A  
Sensitivity  
35 = 35 mA  
50 = 50 mA  
High temperature  
V
o
ltage  
6 = 600 V  
Package  
G = D²PAK  
T = TO-220AB  
I = TO-220AB Ins  
Packing  
Blank =
T
u
be (D²PAK, TO-220AB)  
-TR =
T
a
pe and reel (D²PAK)  
Table 8: Ordering information  
Order code  
T8xxH-6G  
T8xxH-6G-TR  
T8xxH-6T  
Marking  
T8xxH 6G  
T8xxH 6G  
T8xxH 6T  
T8xxH 6I  
Package  
D²PAK  
Weight  
1.5 g  
Base qty.  
50  
Delivery mode  
Tube  
D²PAK  
1.5 g  
1000  
50  
Tape and reel  
Tube  
TO-220AB  
TO-220AB Ins.  
2.3 g  
T8xxH-6I  
2.3 g  
50  
Tube  
DocID13564 Rev 4  
11/13  

Revision
history  
T835H, T850H  
4
Revision history  
Table 9: Document revision history  
Changes  
Date  
Revision  
17-Apr-2007  
19-Sep-2011  
1
2
First issue.  
Updated:
Features
,
Description
,
Figure 2
,
Table 2
and
4
.  
Minor text changes.  
30-Mar-2017  
07-Feb-2018  
3
4
12/13  
DocID13564 Rev 4  

T835H, T850H  
IMPORTANT NOTICE
–
PLEASE READ CAREFULLY  
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modification
s
, and  
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST  
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of or
der  
acknowledgement.  
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the  
design of Purchasers’ products.  
No license, express or implied, to any intellectual property right is granted by ST herein.  
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.  
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.  
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.  
© 2018 STMicroelectronics
–
All rights reserved  
DocID13564 Rev 4  
13/13