STMicroelectronics-TIP31A

TIP31A/31C  

TIP32A/32B/32C  

COMPLEMENTARY SILICON POWER  

TRANSISTORS  

APPLICATION  

LINEA

R

A

ND SWITCHING INDUSTRIAL  

EQUIPMENT  

■

DESCRIPTION  

The TIP31A and TIP31C are silicon  

Epitaxial-Base NPN transistors mounted in  

Jedec TO-220 plastic package. They are intented  

for use in medium power linear and switching  

applications.  

3

2

1

The complementary PNP types are TIP32A and  

TIP32C respectively.  

TO-220  

Also TIP32B is a PNP type.  

INTERNAL SCHEMATIC DIAGRAM  

ABSOLUTE MAXIMUM RATINGS  

Symbol  

Parameter  

Value  

Unit  

NPN  

PNP  

TIP31A  

TIP32A  

60  

TIP31C  

TIP32C  

100  

T

I

P32B  

V

CBO  

V

CEO  

V

EBO  

I

C  

Collector-Base Voltage (I

E

= 0)  

Collector-Emitter Voltage (I

B

= 0)  

Emitter-Base Voltage (I

C

= 0)  

Collector Current  

80  

80  

5

V

V

V

A

A

A

60  

100  

3

I

CM  

Collector Peak Current  

Base Current  

5

I

B  

1

o

P

tot  

40  

2

W

W

Total Dissipation at T

c

ase

≤

25 C  

o

T

amb

25 C  

≤

T

s

tg  

T

j  

Storage Temperature  

-65 to 150  

150  

Max. Operating Junction Temperature  

For PNP types voltage and current values are negative  

1/5  

October 1999  

TIP31A/TIP31C/TIP32A/TIP32B/TIP32C  

THERMAL DATA  

R

thj-case

Thermal Resistance Junction-case  

R

thj-amb

Thermal Resistance Junction-ambient  

Max  

Max  

3.12  

62.5  

(T

case

= 25

o

C unless otherwis

e

s

pecified)  

ELECTRICAL CHARACTERISTICS  

Symbol  

Parameter  

Test Conditions  

Min.  

Typ.  

Max.  

Unit  

I

CEO  

Collector Cut-off  

Current (I

B

= 0)  

for

T

IP31A/32A  

for

T

IP31C/32B/32C  

V

CE

= 30 V  

V

CE

= 60 V  

0.3  

0.3  

mA  

mA  

I

CES  

Collector Cut-off  

Current (V

BE

= 0)  

for

T

IP31A/32A  

for

T

IP/32B  

V

CE

= 60 V  

V

CE

= 80 V  

V

CE

= 100 V  

0.2  

0.2  

0.2  

mA  

mA  

mA  

TIP31C/32C  

for  

I

EBO  

Emitter Cut-off Current

 

V

EB

= 5 V  

(I

C

= 0)  

1

mA  

V

CEO(

s

us)

Collector-Emitter  

Sustaining Voltage  

(I

B

= 0)  

I

C

= 30 mA  

for TIP31A/32A  

for TIP32B  

60  

80  

100  

V

V

V

for TIP31C/32C  

V

CE(sat)  

Collector-Emitter  

Saturation Voltage  

I

C

= 3 A  

I

B

= 375 mA  

1.2  

1.8  

50  

V

V

BE(on)  

h

FE  

Base-Emitter Voltage  

DC Current Gain  

I

C

= 3 A  

V

CE

= 4 V  

V

I

C

= 1 A  

I

C

= 3 A  

V

CE

= 4 V  

V

CE

= 4 V  

25  

10  

h

fe  

Small Signall Current  

Gain  

I

C

= 0.5 A

 

V

CE

= 10 V

 

f = 1 KHz  

I

C

= 0.5 A

 

V

CE

= 10 V

 

f = 1 MHz  

20  

3

Pulsed : pulse duration = 300

µ

s, duty cycle

≤

2%  

For PNP types voltage and current values are negative.  

Safe Operating Area  

Derating Curves  

2/5  

TIP31A/TIP31C/TIP32A/TIP32B/TIP32C  

DC Current Gain (NPN type)  

DC Current Gain

 

(PNP type)  

Collector-Emitter Saturation Voltage

 

(NPN type)  

Collector-Emitter Saturation Voltage

 

(PNP type)  

Base-Emitter Saturation Voltage

 

(NPN type)  

Collector-Base Capacitance

 

(PNP type)  

3/5  

TIP31A/TIP31C/TIP32A/TIP32B/TIP32C  

TO-220 MECHANICAL DATA  

mm  

inch  

TYP.  

DIM.  

MIN.  

4.40  

1.23  

2.40  

TYP.  

MAX.  

4.60  

1.32  

2.72  

MIN.  

0.173  

0.048  

0.094  

MAX.  

0.181  

0.051  

0.107  

A

C

D

D1  

E

1.27  

0.050  

0.49  

0.61  

1.14  

1.14  

4.95  

2.4  

0.70  

0.88  

1.70  

1.70  

5.15  

2.7  

0.019  

0.024  

0.044  

0.044  

0.194  

0.094  

0.393  

0.027  

0.034  

0.067  

0.067  

0.203  

0.106  

0.409  

F

F1  

F2  

G

G1  

H2  

L2  

L4  

L5  

L6  

L7  

L9  

DIA.  

10.0  

10.40  

16.4  

0.645  

13.0  

2.65  

15.25  

6.2  

14.0  

2.95  

15.75  

6.6  

0.511  

0.104  

0.600  

0.244  

0.137  

0.147  

0.551  

0.116  

0.620  

0.260  

0.154  

0.151  

3.5  

3.93  

3.85  

3.75  

P011C  

4/5  

TIP31A/TIP31C/TIP32A/TIP32B/TIP32C  

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequenc

e

s  

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  

granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  

subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  

are not authorized for use as critical components

 

in life support devices or systems without express written approval of STMicroelectronics.  

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1999 STMicroelectronics – Printed in Italy – All Rights Reserved  

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