STMicroelectronics-TIP35CP
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TIP35CP
TIP36CP
Complementary power transistors
.
Features
■
Low collector-emitter saturation voltage
■
Complementary NPN-PNP transistors
Applications
■
General purpose
■
Audio amplifier
3
2
1
TO-3P
Description
The devices are manufactured in planar
technology with “base island” layout. The
resulting transistors show exceptional high gain
performance coupled with very low saturation
voltage.
Figure 1.
Internal schematic diagrams
T
a
ble 1.
Device summary
Order code
Marking
Package
TO-3P
Packaging
TIP35CP
TIP36CP
TIP35CP
TIP36CP
T
u
be
September 2008
Rev 2
1/9
9
Electrical ratings
TIP35CP – TIP36CP
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
NPN
PNP
TIP35CP
TIP36CP
V
V
V
Collector-base voltage (I
= 0)
100
V
V
CBO
CEO
EBO
E
Collector-emitter voltage (I
= 0)
100
B
Emitter-base voltage (I
= 0)
5
25
V
C
I
Collector current
A
C
I
Collector peak current (t
< 5
ms)
50
A
CM
P
I
Base current
5
A
B
P
Total dissipation at T
= 25 °C
case
125
W
°C
°C
tot
stg
T
Storage temperature
-65 to 150
150
T
Max. operating junction temperature
J
For PNP type voltage and current values are negative.
Table 3.
Symbol
Thermal data
Parameter
Thermal resistance junction-case
Value
Unit
R
max
1
°C/W
thj-case
2/9
TIP35CP – TIP36CP
Electrical characteristics
2
Electrical characteristics
(T
= 25 °C; unless otherwise specified)
case
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
= 60 V
CE
Min. Typ. Max. Unit
Collector cut-off current
V
I
1
1
mA
mA
mA
CEO
(I =
0)
B
Emitter cut-off current
I
V
V
= 5 V
EBO
EB
CE
(I =
0)
C
Collector cut-off current
I
= 100 V
0.7
CES
(V =
0)
BE
Collector-emitter
sustaining voltage
(1)
I =
30 mA
100
V
V
C
CEO(sus)
(I =
0)
B
I =
15 A
__
I =
1.5 A
B
1.8
4
V
V
C
Collector-emitter
saturation voltage
(1)
V
CE(sat)
I =
25 A
_
I =
5 A
B
C
I =
15 A
__
V
V
= 4 V
2
4
V
V
C
CE
(1)
Base-emitter voltage
DC current gain
V
BE(on)
I =
25 A
_
= 4 V
C
CE
I =
1.5 A
_
V
V
= 4 V
= 4 V
25
10
C
CE
CE
(1)
h
FE
50
I =
15 A
__
C
I =
1 A
_
V
= 10 V
CE
C
f
Transition frequency
3
MHz
T
f = 1 MHz
1. Pulsed
duration = 300 ms, duty cycle
≥
1.5%.
For PNP type voltage and current are negative.
3/9
Electrical characteristics
TIP35CP – TIP36CP
2.1
Electrical characteristic (curves)
Figure 2.
Figure 4.
Figure 6.
DC current gain for NPN type
Figure 3.
DC current gain for PNP type
DC current gain for NPN type
Figure 5.
DC current gain for PNP type
Collector-emitter saturation
Figure 7.
voltage for NPN type
Collector-emitter saturation
voltage for PNP type
4/9
TIP35CP – TIP36CP
Electrical characteristics
Figure 8.
Base-emitter saturation
voltage for NPN type
Figure 9.
Base-emitter saturation
voltage for PNP type
Figure 10.
Base-emitter on voltage for
NPN type
Figure 11.
Base-emitter on voltage for
PNP type
5/9
Package mechanical data
TIP35CP – TIP36CP
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
6/9
TIP35CP – TIP36CP
Package mechanical data
TO-3P Mechanical data
mm.
TYP
DIM.
MIN.
4.6
MAX.
5
A
A1
A2
b
b1
b2
c
1.45
1.20
0.80
1.80
2.80
0.55
19.70
1.50
1.40
1
1.65
1.60
1.20
2.20
3.20
0.75
20.10
0.60
19.90
13.90
D
D1
E
15.40
15.80
E1
E2
e
13.60
9.60
5.45
20
5.15
19.50
5.75
20.50
L
L1
L2
P
3.50
18.40
18.20
3.10
18.60
3.30
Q
5
Q1
3.80
7/9
TIP35CP – TIP36CP
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