STMicroelectronics-TM8050H-8W
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TM8050H-8W
Datasheet
80 A 800 V high temperature thyristor (SCR) in TO-247 package
Features
A
K
•
•
•
•
•
•
•
•
•
High junction temperature: T
j
= 150 °C
Blocking voltage: V
DRM
= V
RRM
= 800 V
Nominal current: I
T(RMS)
= 80 A
G
Gate triggering current: I
GT
max. = 50 mA
High noise immunity: dV/dt > 1 kV/µs
Through hole package TO-247
TAB = A
Increase of thermal margin due to extended T
j
up to 150 °C
Low I
D
and I
R
in blocking state
G
A
K
Ecopack2
(includes halogen free & RoHS compliance)
TO-247 uninsulated
Applications
•
•
•
•
•
•
•
AC-DC rectifier controlled bridge
Variable speed motor drive
Battery charging system
AC solid state relay
By pass switch of UPS
Industrial welding systems
Motor soft starter systems
Product status link
Description
thyristor suitable for applications where high power switching (I
T(RMS)
= 80 A) and low
power dissipation (V
TM
= 1.55 V at 160 A) are key features. These features make it
ideal for motorbike voltage regulator, by-pass AC switch, controlled rectifier bridge,
solid state relay, battery charger, welding equipment and motor driver applications.
Product summary
I
80 A
800 V
50 mA
150 °C
T(RMS)
V
/V
DRM RRM
I
GT
T
j
DS11583
–
Rev 2
–
August 2019
For further information contact your local STMicroelectronics sales office.
TM8050H-8W
Characteristics
1
Characteristics
Table 1.
Absolute ratings (limiting values)
Parameter
Symbol
Value
80
Unit
A
I
RMS on-state current (180 ° conduction angle)
T(RMS)
T
= 126 °C
C
I
Average on-state current (180 ° conduction angle)
50
A
T(AV)
t =
8.3 ms
731
670
2245
800
p
I
Non repetitive surge peak on-state current, V
= 0 V
T initial
= 25 °C
A
TSM
R
j
t =
10 ms
p
2
2
2
T =
25 °C
j
I t
I t
value for fusing
A s
V
/ V
Maximum repetitive symmetric blocking voltage
Critical rate of rise of on-state current
V
RRM
DRM
T =
25 °C
j
dl/dt
f = 50 Hz
200
A/µs
I
= 2 x I
, tr ≤ 100 ns
G
GT
I
t =
20 µs
T =
150 °C
Peak gate current
8
A
W
V
GM
p
j
P
T =
150 °C
j
Average gate power dissipation
Maximum peak reverse gate voltage
Storage junction temperature range
Maximum operating junction temperature
1
G(AV)
V
5
RGM
T
-40 to +150
-40 to +150
°C
°C
stg
T
j
Table 2.
Electrical characteristics (T
j
= 25 °C unless otherwise specified)
Symbol
Test Conditions
Value
2.5
Unit
Min.
I
V
= 12
V
, R
=
3
3 Ω
mA
GT
D
L
Max.
50
V
V
V
= 12
V
, R
=
3
3 Ω
L
Max.
Min.
Max.
Max.
Typ.
Min.
1.5
V
V
GT
D
V
= V
, R
= 3.3 kΩ
T =
150 °C
0.2
100
125
3
GD
D
DRM
L
j
I
I =
500 mA, gate open
T
mA
mA
µs
H
I
I =
1.2 x I
G GT
L
t
I =
80 A, V
= V
T
, I
= 200 mA, dI
/dt = 0.2 A/µs
DRM G
G
gt
D
V
= 67 % V
, gate open
DRM
T =
150 °C
j
dV/dt
1000
V/µs
D
I =
33 A, dI
/dt = 10 A/µs, V
= 75
V
, V
=
4
00
V
,
d
V
/dt =
T
T
R
D
D
t
q
T =
150 °C
j
Max.
150
µs
20 V/µs, t
= 100 µs
P
Table 3.
Static characteristics
Test conditions
Symbol
Value
1.55
0.85
5.5
Unit
V
TM
I
= 160 A, t
= 380 µs
T =
25 °C
j
Max.
Max.
Max.
Max.
Max.
TM
p
V
V
T =
150 °C
j
On state threshold voltage
On state dynamic resistance
TO
R
D
T =
150 °C
j
mΩ
µA
I
T =
25 °C
j
20
DRM
V
= V
= V
= V
= 800 V
RRM
D
DRM
R
I
T =
150 °C
j
2.5
mA
RRM
DS11583
–
Rev 2
page 2/10
TM8050H-8W
Characteristics
Table 4.
Thermal parameters
Parameter
Symbol
Value
0.30
50
Unit
R
Junction to case (DC,max.)
Junction to ambient DC (typ.)
th(j-c)
°C/W
R
th(j-a)
DS11583
–
Rev 2
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TM8050H-8W
Characteristics (curves)
1.1
Characteristics curves
Figure 1.
Maximum average power dissipation versus
average on-state current
Figure 2.
Average and DC on-state current versus case
temperature
P(W)
I
(A)
90
T(AV)
D.C
α = 18
0
°
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
α = 12
0
°
D.C
α = 180°
α = 120°
α = 90°
α = 9
0
°
α = 6
0
°
α = 60°
α = 3
0
°
α = 3
0
°
I
(A)
T
(°C)
T(AV)
35
c
0
25
50
75
100
125
150
0
5
10
15
20
25
30
40
45
50
55
60
65
Figure 3.
Average and D.C. on state current versus
ambient temperature
Figure 4.
On-state characteristics (maximum values)
I
(A)
TM
1000
100
10
I
(A)
T(AV)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
D.C
α = 180°
T
j
max :
= 0.85 V
T
j
= 150 °C
T
j
= 25 °C
V
R
T
(°C)
TO
A
V
(V)
= 5.5m Ω
d
TM
1
0
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
Figure 5.
Relative variation of thermal impedance junction
to case and junction to ambient versus pulse duration
Figure 6.
Relative variation of gate trigger current and
gate voltage versus junction temperature
K = [Zth/Rth]
I
, V
[T ] / I
, V
[T =
25 °C]
j GT GT
j
GT GT
1.0E+00
2.0
1.5
1.0
0.5
0.0
Z
th(
j
–
c
)
Z
I
th(
j
–
a
)
GT
1.0E-01
V
GT
T (°C)
tp(s)
1.0E+01
j
1.0E-02
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+02
1.0E+03
-50
-25
0
25
50
75
100
125
150
DS11583
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TM8050H-8W
Characteristics (curves)
Figure 7.
Relative variation of holding current and
latching current versus junction temperature (typical
values)
Figure 8.
Surge peak on state current versus number of
cycles
I
(A)
TSM
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
I
, I
[T ]/ I
, I
[T =
25 °C]
H
L
j
H L j
2.0
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
I
H
V
R
= 0 V
Non repetitive
T initial = 25 °C
j
I
L
Repetitive
= 126 °C
T
c
Number of cycles
T (°C)
0
j
1
10
100
1000
-50
-25
0
25
50
75
100
125
150
Figure 10.
Relative variation of leakage current versus
junction temperature for different values of blocking
voltage
Figure 9.
Non repetitive surge peak on state current for a
half cycle sine pulse versus pulse width t
p
< 10 ms
I
(A)
TSM
10000
1000
100
I
, I
[T ; V
, V
DRM
]/ I
RRM
, I
[150°C; 800 V]
DRM RRM
DRM RRM
j
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
dI/dt limitation: 200 A/µs
T
j
initial = 25 °C
V
R
= 0 V
V
DRM
= V
= 800 V
RRM
(
maximum values)
I
TSM
V
DRM
= V
= 800 V
RRM
(typical values)
V
= V
RRM
= 600 V
DRM
(typical values)
t
(ms)
P
T (°C)
j
10
0.01
0.10
1.00
10.00
25
50
75
100
125
150
Figure 11.
Relative variation of static dV/dt immunity versus junction temperature (typical values)
dV/dt[T ]/dV/dt[T
= 150 °C]
j
j
5
4
3
2
1
0
V
= 0.67 x V
DRM
D
T (°C)
j
10
30
50
70
90
1
1
0
130
150
DS11583
–
Rev 2
page 5/10
TM8050H-8W
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
2.1
TO-247 package information
•
•
•
Epoxy meets UL 94,V0
Recommended torque value: 0.8 N·m
Maximum torque value: 1 N·m
Figure 12.
TO-247 package outline
0075325_9
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–
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TM8050H-8W
TO-247 package information
Table 5.
TO-247 package mechanical data
Dimensions
Millimeters
Dim.
Min.
4.85
2.20
1.0
Typ.
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
Min.
Typ.
Max.
A
A1
b
0.1909
0.0866
0.0394
0.0787
0.1181
0.0157
0.7815
0.6083
0.2087
0.5591
0.1457
0.2028
0.1024
0.0551
0.0945
0.1339
0.0315
0.7933
0.6201
0.2205
0.5827
0.1693
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
E
e
5.45
18.50
5.50
0.2146
0.7283
0.2165
L
L1
L2
ØR
S
3.55
4.50
5.30
3.65
5.50
5.70
0.1398
0.1772
0.2087
0.1437
0.2165
0.2244
1. Inch
dimensions given only for reference
2. Dimension
D plus gate protrusion does not exceed 20.5 mm
3. Resin
thickness around the mounting hole is not less than 0.9 mm
DS11583
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page 7/10
TM8050H-8W
Ordering information
3
Ordering information
Figure 13.
Ordering information scheme
TM
80
50
H – 8
W
Series
Thyristor
RMS current
80 = 80 A
current
I
GT
50 = 50 mA
Maximum junction temperature
H = 150 °C
Voltage
8 = 800 V
Package
W = TO-247
Table 6.
Ordering information
Order code
Marking
Package
Weight
Base qty.
Delivery mode
TM8050H-8W
TM8050H8
TO-247
4.43 g
30
Tube
DS11583
–
Rev 2
page 8/10
TM8050H-8W
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DS11583
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