STMicroelectronics-TN1205H-6G-TR
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TN1205H
High temperature 12 A SCRs
Datasheet
−
production data
Features
A
■
High junction temperature: T = 150 °C
j
■
Medium current SCRs
G
K
■
High noise immunity up to 150 °C
■
RoHS (2002/95/EC) compliant
A
A
■
600 V V
, V
RRM
DRM
K
A
Application
K
G
A
G
■
General purpose AC line load switching
■
Motor control circuits
D
2
P
A
K
(TN1205H-6G)
TO-220AB
(TN1205H-6T)
■
Small home appliances
■
Lighting
Table 1.
Order code
Device summary
V
DRM
V
RRM
■
Inrush current limiting circuits
■
Over-voltage crowbar protection
,
Package
I
GT
TN1205H-6T TO-220AB
TN1205H-6G
D
2
P
A
K
Description
600 V
2 to 5 mA
Available in standard gate triggering levels, the
TN1205H SCR series has very high switching
capability up to junction temperature of 150 °C.
These products fit all modes of control found in
applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive discharge ignition and voltage
regulation circuits.
These products are particulary adapted for use in
areas where the ambient temperature is high or
the ventilation low, or where an increase of power
density is required.
Through-hole or surface-mount packages provide
performance in a limited space area.
April 2012
Doc ID 018497 Rev 4
1/10
This is information on a product in full production.
10
Characteristics
TN1205H
1
Characteristics
Table 2.
Symbol
Absolute ratings (limiting values)
Parameter
Value
Unit
I
T(RMS)
On-state rms current (180° conduction angle)
I
T(AV)
Average on-state current (180° conduction angle)
12
7.6
126
120
72
A
A
TO220-AB,
D
2
P
A
K
T
c
= 136 °C
T
j
= 25 °C
t
p
= 8.3 ms
t
p
= 10 ms
I
TSM
Non repetitive surge peak on-state current
A
I
2
t
I
2
t Value for fusing
t
p
= 10 ms
t
p
= 10 ms
A
2
S
V
V
DSM
,
V
DRM
, V
RRM
+100
Non repetitive surge peak off-state voltage
V
RSM
dI/dt
I
GM
Critical rate of rise of on-state current I
G
= 2 x I
GT
t
r
≤
100 ns
,
F = 60 Hz
t
p
= 20 µs
T
j
= 150 °C
100
A/µs
Peak gate current
T
j
= 150 °C
T
j
= 150 °C
4
1
5
A
W
V
P
G(AV)
Average gate power dissipation
V
RGM
Maximum peak reverse gate voltage
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
– 40 to + 150
260
°C
°C
T
L
Maximum lead temperature for soldering during 10 s.
Table 3.
Symbol
Electrical characteristics (T
= 25 °C, unless otherwise specified)
j
Test conditions
Value
Unit
MIN.
2
I
GT
V
D
= 12
V
,
R
L
= 33
Ω
mA
MAX.
5
V
GT
V
GD
I
H
V
D
= V
DRM
, R
L
= 3.3 k
Ω
V
D
= V
DRM
, R
L
= 3.3 k
Ω
I
T
= 500 mA gate open
I
G
= 1.2 I
GT
MAX.
MIN.
1.3
0.2
20
V
V
MAX.
MAX.
mA
mA
I
L
40
T
j
= 125 °C
T
j
= 150 °C
200
100
1.9
dV/dt V
D
= 67% V
DRM
gate open
t
gt
I
TM
= 40 A, V
D
= 500
V
,
I
G
= 100 mA, dI
G
/dt = 5 A/µs
t
q
MIN.
V/µs
typ.
typ.
µs
µs
V
DM
= 335
V
,
T
j =125 °C, I
TM
= 20 A, V
R
= 25
V
,
(
dI
T
/dt)
Max
= 30 A/µs,
65
dV
D
/dt = 50 V/µs, R
GK
= 100
Ω
2/10
Doc ID 018497 Rev 4
TN1205H
Characteristics
Table 4.
Symbol
Static characteristics
Test conditions
Value
Unit
V
T
V
TD
R
d
I
TM
= 24 A, t
p
= 380 µs
Threshold voltage
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 150 °C
1.6
0.8
30
5
V
V
Dynamic resistance
m
Ω
µA
MAX.
I
DRM
I
RRM
V
DRM
= V
RRM
1
mA
3
Table 5.
Symbol
Thermal resistance
Parameter
Value Max.
Unit
R
th(j-c)
Junction to case (DC)
R
th(j-a)
Junction to ambient (DC)
1. S
= Copper surface under tab
1.3
45
60
°C/W
S
(1)
= 1 cm
2
D
2
P
A
K
TO-220AB
°C/W
Figure 1.
Maximum average power
dissipation vs. average on-state
current
Figure 2.
Average and DC on-state current
vs. case temperature
P(W)
11
I
T(AV)
(A)
14
α
= 180°
360°
10
D.C.
12
10
8
9
8
7
6
5
4
3
2
1
0
α
α
= 180°
6
4
2
I
(A)
T(AV)
T
case
(°C)
0
0
1
2
3
4
5
6
7
8
0
10 20 30 40 50 60 70 80 90
100 110 120 130 140 150
Doc ID 018497 Rev 4
3/10
Characteristics
TN1205H
Figure 3.
Average and DC on-state current
Figure 4.
Relative variation of thermal
vs. ambient temperature
impedance vs. pulse duration
I
(A)
K = [Z
/ R
th
]
T(AV)
th
1.00
0.10
0.01
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
D.C
Z
th(j-c)
Z
th(j-a)
.
S
CU
= 1 cm
2
D
2
P
A
K
α
= 180°
D
2
P
A
K
D.C
S
CU
= 1 cm
2
(Epoxy Fr4)
.
α
= 180°
TO-220AB
TO220AB
T
(s)
T
A
(°C)
10 20 30 40 50 60 70 80 90
100 110 120 130 140 150
p
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
0
Figure 5.
Relative variation of I
,V ,
I ,
I
vs. junction temperature
(typical values)
Figure 6.
Relative variation of static dV/dt
immunity vs. junction temperature
(typical values)
GT GT
H
L
I
GT
,V
GT
,I
H
,I
L
T
j
]/I
GT
,V
GT
,I
H
,I
L
[T
j
= 25 °C]
dV/dt[T
j
]/dV/dt[T
j
= 150 °C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
16
15
14
13
12
11
10
9
8
7
6
5
V
D
= 0.67 x V
DRM
V
GT
I
H
I
L
R
gk
= 1 k
I
GT
Ω
4
3
2
1
T
j
(°C)
T
j
(°C)
0
-40
-20
0
20
40
60
80
100
120
140
25
50
75
100
125
150
Figure 7.
Surge peak on-state current vs.
number of cycles
Figure 8.
Non repetitive surge peak on-state
current and corresponding value of
I t
vs. sinusoidal pulse width
2
I
TSM
(A), I
2
t (A
2
s)
I
TSM
(A)
130
10000
1000
100
T initial
= 25 °C
dl /dt limitation: 100 A / µs
j
120
110
100
90
t
p
= 20 ms
One cycle
Non repetitive
80
T initial
= 25 °C
j
I
TSM
70
60
50
40
I²t
Sinusoidal pulse
30
Repetitive
T =
136 °C
c
with width t
p
<10 ms
20
10
0
Number of cycles
t (ms)
p
10
1
10
100
1000
0.01
0.10
1.00
10.00
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Doc ID 018497 Rev 4
TN1205H
Figure 9.
Characteristics
On-state characteristics
(maximum values)
Figure 10.
Relative variation of leakage
current vs. junction temperature for
different values of blocking voltage
I
DRM
,I
RRM
[T
j
;
V
DRM
V
RRM
] / I
DRM
,I
I
TM
(A)
1000
RRM
[T
j
= 150 °C; 600 V]
,
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
T
j
max:
V
to
= 0.8 V
R
d
= 30 m
Ω
V
DRM
= V
RRM
= 600 V
V
DRM
= V
RRM
= 400 V
100
10
V
DRM
= V
RRM
= 200 V
Typical value
T
j
= 150 °C
T
j
= 25 °C
T
j
(°C)
150
V
TM
(V)
1
0
25
50
75
100
125
1
2
3
4
5
2
Figure 11.
Thermal resistance junction to ambient vs. copper surface under tab (D
P
A
K, printed
circuit board FR4, copper thickness: 35 µm)
R
th(j-a)
(°C/W)
80
D
2
PAK
70
60
50
40
30
20
10
S
CU
(cm²)
35 40
0
0
5
10
15
20
25
30
Doc ID 018497 Rev 4
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Ordering information scheme
TN1205H
2
Ordering information scheme
Figure 12.
Ordering information scheme
TN 12 05 H –
6
G – TR
Standard SCR
Current
12 = 12 A
Sensitivity
05 = 2 to 5 mA
Junction temperature
H = 150 °C
Voltage
6 = 600 V
Package
T = TO-220AB
G = D
2
P
A
K
Delivery mode
Blank = tube (TO-220AB, D
2
P
A
K)
TR = tape and reel (D
2
P
A
K)
6/10
Doc ID 018497 Rev 4
TN1205H
Package information
3
Package information
●
●
Epoxy meets UL94, V0
Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
®
ECO
P
A
CK is
an ST trademark.
Table 6.
TO-220AB dimensions
Dimensions
Millimeters
Min. Typ. Max. Min. Typ. Max.
Ref.
Inches
A
15.20
15.90 0.598
0.625
a1
3.75
0.147
C
B
a2 13.00
10.00
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
Ø I
b2
B
L
F
b1 0.61
b2 1.23
A
I4
C
4.40
l3
c1 0.49
c2 2.40
c2
a1
l2
a2
e
F
2.40
6.20
M
c1
b1
ØI 3.75
e
I4 15.80
16.40 16.80 0.622 0.646 0.661
L
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
l2
l3
M
2.60
0.102
Doc ID 018497 Rev 4
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Package information
Table 7.
TN1205H
2
D
P
A
K
Dimensions
Dimensions
Millimeters
Min. Typ. Max. Min. Typ. Max.
Ref.
Inches
A
4.30
4.60 0.169
2.69 0.098
0.23 0.001
0.93 0.027
0.181
0.106
0.009
0.037
A
A1 2.49
A2 0.03
E
C2
L2
B
0.70
B2 1.25 1.40
0.45
C2 1.21
D
0.048 0.055
L
C
0.60 0.017
1.36 0.047
9.35 0.352
10.28 0.393
5.28 0.192
15.85 0.590
1.40 0.050
1.75 0.055
0.024
0.054
0.368
0.405
0.208
0.624
0.055
0.069
L3
A1
B2
B
R
C
D
E
G
L
8.95
10.00
4.88
G
A2
2mm min.
FL
A
T
Z
ONE
15.00
L2 1.27
L3 1.40
R
V2
0.40
0.016
V2
0°
8°
0°
8°
Figure 13.
Footprint (dimensions in mm)
16.90
10.30
5.08
1.30
3.70
8.90
8/10
Doc ID 018497 Rev 4
TN1205H
Ordering information
4
Ordering information
Table 8.
Ordering information
Order code
Marking
Package
Weight Base
qty Delivery
mode
TN1205H-6T
TN1205H6T
TN1205H6G
TN1205H6G
TO-220AB
D
2
P
A
K
2.0 g
1.5 g
1.5 g
50
50
T
u
be
T
u
be
TN1205H-6G
TN1205H-6G-TR
D
2
P
A
K
1000
T
a
pe and reel
5
Revision history
Table 9.
Date
Document revision history
Revision
Changes
17-Feb-2011
26-Sep-2011
17-Jan-2012
1
2
3
First issue.
Corrected typographical error in Features and Description.
Moved junction temperature to top of features list.
Description reworded for readabilit
y
.
N
o technical changes.
26-Apr-2012
4
Doc ID 018497 Rev 4
9/10
TN1205H
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10/10
Doc ID 018497 Rev 4
