STMicroelectronics-TN1605H-6G
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TN1605H-6G
High temperature 16 A SCRs
Datasheet – production data
A
K
Description
Designed with high immunity switching to
external surges, this device offers robust
switching up to its 150°C maximum T
j
.
G
The combination of noise immunity and low gate
triggering current allows to design strong and
compact control circuit.
A
Table 1: Device summary
Order code
Package
V
DRM
/V
RRM
I
GT
G
A
TN1605H-6G
D²PAK
600
6 mA
K
D²PAK
Features
High junction temperature: T
j
= 150 °C
Gate triggering current I
GT
= 6 mA
High noise immunity dV/dt = 200 V/μs up to
150 °C
Blocking voltage V
DRM
/V
RRM
= 600 V
High turn-
on current rise dI/dt: 100 A/μs
ECOPACK
®
2 compliant component
Applications
Motorbikes voltage regulator circuits
Inrush current limiting circuits
Motor control circuits and starters
Light dimmers
Solid state relays
June 2017
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This is information on a product in full production.
Characteristics
TN1605H-6G
1
Characteristics
Table 2: Absolute maximum ratings (limiting values, T
j
= 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
RMS on-state current
(180 ° conduction angle)
I
T(RMS)
T
c
= 133 °C
16
A
T
c
= 133 °C
T
c
= 138 °C
T
c
= 142 °C
10
8
Average on-state current
(180° conduction angle)
IT
(AV)
A
6
t
p
= 8.3 ms
153
140
98
Non repetitive surge peak
on-state current
I
TSM
T
j
initial = 25 °C
A
t
p
= 10 ms
t
p
= 10 ms
I
2
t
I
2
t value for fusing
A
2
s
A/µs
V
Critical rate of rise of on-state
I
G
= 2 x I
GT
,
dl/dt
f = 60 Hz
100
600
700
current
tr ≤ 100 ns,
V
DRM
/V
RRM
Repetitive peak off-state voltage
T
j
= 150 °C
Non repetitive surge peak off-
state voltage
V
DSM
/V
RSM
t
p
= 10 ms
V
P
G
(AV)
V
RGM
I
GM
Average gate power dissipation
Maximum peak reverse gate voltage
T
j
= 150 °C
T
j
= 150 °C
1
W
V
5
Peak gate current
t
p
= 20 µs
4
A
T
stg
Storage junction temperature range
Operating junction temperature range
-40 to +150
-40 to +150
°C
°C
T
j
Table 3: Dynamic characteristics
Symbol
Parameter
T
j
Value
Unit
25 °C
Typ.
Min.
3.5
4.5
6
I
GT
mA
V
D
= 12 V, R
L
= 33 Ω
Max.
Max.
150 °C
V
GT
V
GD
I
L
1.3
0.15
40
V
V
V
D
= 600, R
L
= 3.3 kΩ
I
G
= 1.2 x I
GT
Min.
Max.
Max.
Min.
25 °C
mA
I
H
I
T
= 500 mA, gate open
V
D
= 402 V, gate open
20
dV/dt
150 °C
25 °C
200
V/µs
µs
I
TM
= 32 A, V
D
= 402 V, I
G
= 12 mA, (dI
G
/dt)
max = 0.2 A/µs
t
gt
t
q
Typ.
Typ.
1.9
70
I
TM
= 32 A, V
D
= 402 V, (dl/dt)
off
= 30 A/µs,
V
R
= 25 V, dV
D
/dt = 20 V/µs
150 °C
µs
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TN1605H-6G
Characteristics
Table 4: Static electrical characteristics
Symbol
V
TM
Test conditions
I
TM
= 32 A, t
p
= 380 µs
T
j
Value
1.6
Unit
V
25 °C
150 °C
Max.
Max.
Max.
Threshold on-state voltage
Dynamic resistance
V
TO
0.82
V
R
D
150 °C
25 °C
25
5
mΩ
µA
V
DRM
= V
RRM
I
DRM
/I
RRM
125 °C
150 °C
Max.
1.5
3.1
mA
Table 5: Thermal resistance
Parameter
Symbol
R
th(j-c)
Value
1.1
Unit
Junction to case (DC)
Junction to ambient (DC)
Max.
Typ.
°C/W
R
th(j-a)
45
Notes:
(1)
S = copper surface under tab
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Characteristics
TN1605H-6G
1.1
Characteristics (curves)
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Average and DC on-state current versus
case temperature
I
(A)
P(W)
T
(AV)
18
16
14
12
10
8
20
18
16
14
12
10
8
DC
α
= 180 °
α
= 120 °
DC
α
= 90 °
α
= 60 °
α
= 30 °
α
= 180 °
α
= 120 °
α
= 90 °
6
α
= 60 °
6
α
= 30 °
360 °
4
4
2
2
T (°C)
I
T
(AV)
(A)
α
c
0
0
0
5
10
15
0
25
50
75
100
125
150
Figure 3: Average and DC on-state current versus
ambient temperature
Figure 4: Relative variation of thermal impedance
versus pulse duration
K = [Z
/ R
th
th
]
I
(A)
T(AV)
1.0E+00
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Z
th(j-c)
DC
Z
th(j-a)
α
= 180 °
1.0E-01
t (s)
T (°C)
P
a
1.0E-02
0
25
50
75
100
125
150
1.0E-03
1.0E-02
1.0E-01
1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 5: Relative variation of gate trigger current
and gate voltage versus junction temperature
(typical values)
Figure 6: Relative variation of holding and latching
current versus junction temperature
(typical values)
I
, V
[ T
] / I
, V
[ T
= 25 °C]
I
, I
[ T
] / I
, I
[ T
= 25 °C]
L j
H L
j
GT GT
GT GT
j
j
H
2.5
2.3
2.0
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
2.5
2.0
1.5
1.0
0.5
0.0
I
L
I
GT
I
H
V
GT
T (°C)
j
T (°C)
j
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
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TN1605H-6G
Figure 7: Relative variation of static dV/dt
Characteristics
Figure 8: Surge peak on-state current versus
number of cycles
immunity versus junction temperature
(typical values)
I
(A)
TSM
150
100
50
dV/dt [T ] / dV/dt [T = 150 °C]
j
j
6
5
4
3
2
1
0
V
= V
= 402 V
R
D
Non repetitive T
= 25 °C
j
t =10ms
p
Above test equipment capability
One cycle
Repetitive T
= 133 °C
c
Number of cycles
100
T (°C)
j
0
1
10
1000
25
50
75
100
125
150
Figure 9: Non repetitive surge peak on-state
current versus sinusoidal pulse width (t
P
< 10 ms).
Figure 10: On-state characteristics
(maximum values)
Figure 11: Relative variation of leakage current versus junction temperature (tP < 10ms)
I
, I
[ T
] / I
, I
DRM RRM
[ T
= 150 °C ]
DRM RRM
j
j
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
V
= V
= 600
V
DRM
RRM
T (°C)
j
25
50
75
100
125
150
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Package
information
TN1605H-6G
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
Epoxy meets UL 94,V0
Lead-free package
2.1
D²PAK package information
Figure 12: D²PAK package outline
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TN1605H-6G
Package
information
Table 6: D²PAK package mechanical data
Dimensions
Ref.
Millimeters
Min.
4.30
2.49
0.03
Typ.
Max.
4.60
2.69
0.23
Min.
Typ.
Max.
A
A1
A2
A3
b
0.1693
0.0980
0.0012
0.1811
0.1059
0.0091
0.0098
0.25
0.70
1.25
0.45
1.21
8.95
7.50
1.30
2.54
10.00
8.30
6.85
4.88
15
0.93
1.7
0.0276
0.0492
0.0177
0.0476
0.3524
0.2953
0.0512
0.1
0.0366
0.0669
0.0236
0.0535
0.3681
0.3150
0.0669
b2
c
0.60
1.36
9.35
8.00
1.70
c2
D
D1
D2
e
E
10.28
8.70
7.25
5.28
15.85
2.28
1.40
1.75
0.3937
0.3268
0.2697
0.1921
0.5906
0.0701
0.0500
0.0551
0.4047
0.3425
0.2854
0.2079
0.6240
0.0898
0.0551
0.0689
E1
E2
G
H
L
1.78
1.27
1.40
L2
L3
R
0.0157
0.40
V2
0°
8°
0°
8°
Notes:
(1)
Dimensions in inches are given for reference only
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Package
information
TN1605H-6G
Figure 13: D²PAK recommended footprint (dimensions are in mm)
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TN1605H-6G
Ordering
information
3
Ordering information
Figure 14: Ordering information scheme
TN 16
05 H – 6
G – TR
Series
TN = SCR
RMS current
16 = 16 A
Gate sensitivity
05 = 6 mA
High temperature
Voltage
6 = 600 V
Pac
k
a
ge
G = D²PAK
Delivery mode
Blank = tube
-TR = tape and reel
Table 7: Ordering information
Order code
Marking
Package
Weight
Base qty.
50
Delivery mode
Tube
TN1605H-6G
TN1605H6
D²PAK
1.5 g
TN1605H-6G-TR
1000
Tape and reel
4
Revision history
Table 8: Document revision history
Revision
Date
Changes
18-May-2017
26-Jun-2017
1
2
Initial release.
DocID030162 Rev 2
9/10
TN1605H-6G
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