STMicroelectronics-TN1605H-6T

Part #STMicroelectronics-TN1605H-6T
Download 
STMicroelectronics-TN1605H-6T
TN1605H-6T  
High temperature 16 A SCRs  
Datasheet – production data  
A
Applications  
Motorbikes voltage regulator circuits  
Inrush current limiting circuits  
Motor control circuits and starters  
Light dimmers  
G
K
Solid state relays  
A
Description  
Designed with high immunity switching to  
external surges, the device offers robust  
switching up to its 150 °C maximum T

j

.  
K
TO-220AB  
A
G
The combination of noise immunity and low gate  
triggering current allows to design strong and  
compact control circuit.  
Features  
Table 1: Device summary  
High junction temperature: T

j

= 150 °C  
Gate triggering current I

GT

= 6 mA  
High noise immunity dV/dt = 200 V/μs up to  
150 °C  
Order code  
Package  
V

DRM

/V

RRM  

I

GT  

TN1605H-6T  
TO-220AB  
600  
6 mA  
Blocking voltage V

DRM

/V

RRM

= 600 V  
High turn-
on current rise dI/dt: 100 A/μs  
ECOPACK

®

2 compliant component  
May 2017  
DocID030160 Rev 1  
1/9  
This is information on a product in full production.  

Characteristics  
TN1605H-6T  
1
Characteristics  
Table 2: Absolute maximum ratings (limiting values, T

j

= 25 °C unless otherwise specified)  
Symbol  
Parameter  
Value  
Unit  
RMS on-state current  
(180 ° conduction angle)  
I

T(RMS)  

T

c

= 133 °C  
16  
A
T

c

= 133 °C  
T

c

= 138 °C  
T

c

= 142 °C  
10  
8
Average on-state current  
(180° conduction angle)  
IT

(AV)  

A
6
t

p

= 8.3 ms  
153  
140  
98  
Non repetitive surge peak  
on-state current  
I

TSM  

I

2

t  
T

j

initial = 25 °C  
A
t

p

= 10 ms  
t

p

= 10 ms  
I

2

t value for fusing  
A

2

s  
A/µs  
V
Critical rate of rise of  
on-state current  
I

G

= 2 x I

GT

, tr ≤  
100 ns,  
dl/dt  
f = 60 Hz  
100  
600  
700  
V

DRM

/V

RRM

Repetitive peak off-state voltage  
T

j

= 150 °C  
Non repetitive surge peak  
V

DSM

/V

RSM  

t

p

= 10 ms  
V
off-state voltage  
P

G

(AV)  
V

RGM  

I

GM  

Average gate power dissipation  
Maximum peak reverse gate voltage  
T

j

= 150 °C  
1
W
V
5
Peak gate current  
t

p

= 20 µs  
t

p

= 20 µs  
T

j

= 150 °C  
T

j

= 150 °C  
T

j

= 150 °C  
4
A
P

GM  

P

G(AV)  

T

stg  

Peak gate power dissipation  
Average gate power dissipation  
40  
1
W
W
°C  
°C  
°C  
Storage junction temperature range  
Operating junction temperature range  
-40 to +150  
-40 to +150  
260  
T

j  

T

L  

Maximum lead temperature for soldering during 10 s  
Table 3: Dynamic characteristics  
Parameter  
Symbol  
T

j  

Value Unit  
Min.  
Typ.  
Max.  
Max.  
Min.  
Max.  
Max.  
Min.  
3.5  
I

GT  

4.5  
6
mA  
V

D

= 12 V, R

L

= 33 Ω  
25 °C  
V

GT  

V

GD  

I

L  

1.3  
0.15  
40  
V
V
V

D

= 600 V, R

L

= 3.3 kΩ  
I

G

= 1.2 x I

GT  

150 °C  
25 °C  
mA  
I

H  

I

T

= 500 mA, gate open  
V

D

= 402 V, gate open  
20  
dV/dt  
150 °C  
25 °C  
200  
V/µs  
µs  
I

TM

= 32 A, V

D

= 402 V, I

G

= 12 mA,  
(dI

G

/dt) max = 0.2 A/μs  
t

gt  

t

q  

Typ.  
Typ.  
1.9  
70  
I

TM

= 32 A, V

D

= 402 V, (dl/dt)

off

= 30 A/μs,  
V

R

= 25 V, dV

D

/dt = 20 V/μs  
150 °C  
µs  
2/9  
DocID030160 Rev 1  

TN1605H-6T  
Characteristics  
Table 4: Static electrical characteristics  
Symbol  
V

TM  

Test Conditions  
I

TM

= 32 A, t

p

= 380 µs  
T

j  

Value  
1.6  
Unit  
V
25 °C  
150 °C  
Max.  
Max.  
Max.  
Threshold on-state voltage  
Dynamic resistance  
V

TO  

0.82  
V
R

D  

150 °C  
25 °C  
25  
5
mΩ  
µA  
V

DRM

= V

RRM  

I

DRM

/I

RRM  

125 °C  
150 °C  
Max.  
1.5  
3.1  
mA  
Table 5: Thermal resistance  
Parameter  
Symbol  
R

th(j-c)  

Value  
1.1  
Unit  
Junction to case (DC)  
°C/W  
R

th(j-a)  

Junction to ambient (DC)  
60  
DocID030160 Rev 1  
3/9  

Characteristics  
TN1605H-6T  
1.1  
Characteristics (curves)  
Figure 1: Maximum average power dissipation  
versus average on-state current  
Figure 2: Average and DC on-state current versus  
case temperature  
I
(A)  
P(W)  
T
(AV)  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
DC  
α
= 180 °  
α
= 120 °  
DC  
α
= 90 °  
α
= 60 °  
α
= 30 °  
α
= 180 °  
α
= 120 °  
α
= 90 °  
6
α
= 60 °  
6
α
= 30 °  
360 °  
4
4
2
2
T (°C)  
I
T
(AV)  
(A)  
α
c
0
0
0
5
10  
15  
0
25  
50  
75  
100  
125  
150  
Figure 3: Average and DC on-state current versus  
ambient temperature  
Figure 4: Relative variation of thermal impedance  
versus pulse duration  
K = [Z
 
/ R  
th
th  
]
I
(A)  
T(AV)  
1.0E+00  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Z
th(j-c)  
DC  
Z
th(j-a)  
α
= 180 °  
1.0E-01  
t (s)  
T (°C)  
P
a
1.0E-02  
0
25  
50  
75  
100  
125  
150  
1.0E-03  
1.0E-02  
1.0E-01  
1.0E+00 1.0E+01 1.0E+02 1.0E+03  
Figure 5: Relative variation of gate trigger current  
and gate voltage versus junction temperature  
(typical values)  
Figure 6: Relative variation of holding and latching  
current versus junction temperature  
(typical values)  
I
, V
 
[ T
 
] / I
 
, V
 
[ T
 
= 25 °C]  
I
, I
 
[ T
 
] / I
 
, I
 
[ T
 
= 25 °C]  
L j
 
H L
 
j  
GT GT  
GT GT  
j
j
H
2.5  
2.3  
2.0  
1.8  
1.5  
1.3  
1.0  
0.8  
0.5  
0.3  
0.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
I
L
I
GT  
I
H
V
GT  
T (°C)  
j
T (°C)  
j
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
4/9  
DocID030160 Rev 1  

TN1605H-6T  
Characteristics  
Figure 7: Relative variation of static dV/dt  
immunity versus junction temperature  
(typical values)  
Figure 8: Surge peak on-state current versus  
number of cycles  
I
(A)  
dV/dt [T ] / dV/dt [T = 150 °C]  
j
j
TSM  
6
5
4
3
2
1
0
150  
100  
50  
V
= V
 
= 402 V  
R
D
Non repetitive T
 
= 25 °C  
j
t =10ms  
p
Above test equipment capability  
One cycle  
Repetitive T
 
= 133 °C  
c
T (°C)  
j
Number of cycles  
100  
0
25  
50  
75  
100  
125  
150  
1
10  
1000  
Figure 9: Non repetitive surge peak on-state  
current versus sinusoidal pulse width (t

P

< 10 ms).  
Figure 10: On-state characteristics  
(maximum values)  
Figure 11: Relative variation of leakage current versus junction temperature (t

P

< 10ms)  
I
, I  
[ T
 
] / I  
, I
 
[ T
 
= 150 °C ]  
DRM RRM
 
j  
DRM RRM  
j
1.E+00  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
V
= V  
= 600
 
V  
RRM  
DRM  
T (°C)  
j
25  
50  
75  
100  
125  
150  
DocID030160 Rev 1  
5/9  

Package
information  
TN1605H-6T  
2
Package information  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK

®  

specifications, grade definitions and product status are available at:

.  
ECOPACK

®

is an ST trademark.  
Epoxy meets UL 94,V0  
Lead-free package  
2.1  
TO-220AB (NIns. and Ins.) package information  
Figure 12: TO-220AB (NIns. & Ins.) package outline  
6/9  
DocID030160 Rev 1  

TN1605H-6T  
Package
information  
Table 6: TO-220AB (NIns. & Ins.) package mechanical data  
Dimensions  
Ref.  
Millimeters  
Typ.  
Inche

Typ.  
Min.  
Max.  
Min.  
Max.  
A
a1  
a2  
B
15.20  
15.90  
0.5984  
0.6260  
3.75  
0.1476  
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.73  
2.65  
1.14  
1.14  
15.80  
14.00  
10.40  
0.88  
1.32  
4.60  
0.70  
2.72  
2.70  
6.60  
3.88  
2.95  
1.70  
1.70  
16.80  
0.5118  
0.3937  
0.0240  
0.0484  
0.1732  
0.0193  
0.0945  
0.0945  
0.2441  
0.1469  
0.1043  
0.0449  
0.0449  
0.6220  
0.5512  
0.4094  
0.0346  
0.0520  
0.1811  
0.0276  
0.1071  
0.1063  
0.2598  
0.1528  
0.1161  
0.0669  
0.0669  
0.6614  
b1  
b2  
C
c1  
c2  
e
F
I
L
I2  
I3  
I4  
16.40  
2.6  
0.6457  
0.1024  
M
Notes:  

(1)

Inch dimensions are for reference only.  
DocID030160 Rev 1  
7/9  
 

Ordering
information  
TN1605H-6T  
3
Ordering information  
Figure 13: Ordering information scheme  
TN 16
 
05 H – 6  
T
Series  
TN = SCR  
RMS current  
16 = 16 A  
Gate sensitivity  
05 = 6 mA  
High temperature  
Voltage  
6 = 600 V  
Pac
k
a
ge  
T = TO-220AB  
Delivery mode  
Blank = tube  
Table 7: Ordering information  
Order code  
TN1605H-6T  
Marking  
Package  
Weight  
Base qty.  
Delivery mode  
TN1605H6  
TO-220AB  
2.3 g  
50  
Tube  
4
Revision history  
Table 8: Document revision history  
Revision  
Date  
Changes  
19-May-2017  
1
Initial release.  
8/9  
DocID030160 Rev 1  

TN1605H-6T  
IMPORTANT NOTICE
–
PLEASE READ CAREFULLY  
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications
, and  
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST  
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of or
der  
acknowledgement.  
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the  
design of Purchasers’ products.  
No license, express or implied, to any intellectual property right is granted by ST herein.  
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.  
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.  
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.  
© 2017 STMicroelectronics
–
All rights reserved  
DocID030160 Rev 1  
9/9