STMicroelectronics-TN2015H-6I
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TN2015H-6I
Datasheet
20 A 600 V high temperature SCR thyristors in insulated TO-220
Features
A
K
•
•
•
•
•
High junction temperature: T
j
max. = 150 °C
High static immunity dV/dt = 750 V/µs up to 150 °C
Peak off-state voltage V
DRM
/V
RRM
= 600 V
High turn-on current rise dI/dt = 100 A/µs
Insulated package TO-220AB:
G
–
–
Insulated voltage: 2500 V
RMS
Complies with UL 1557 (File ref : E81734)
K
•
•
ECOPACK2
compliant
A
G
Halogen-free molding, lead-free plating
TO-220AB insulated
Applications
•
•
•
•
General purpose AC line load switching
Motor control circuits and starters
Inrush current limiting circuits
Heating resistor control, solid state relays
Description
thermal performance operation up to 20 A rms.
Product status
Its trade-off noise immunity (dV/dt = 750 V/μs) versus its gate triggering current
(I
GT
= 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust
and compact control circuit for voltage regulator in motorbikes and industrial drives,
overvoltage crowbar protection, motor control circuits in power tools and kitchen
appliances and inrush current limiting circuits.
Product summary
Order code
TO-220AB Ins.
20 A
Package
I
T(RMS)
V
/V
600 V
DRM RRM
T max.
j
150 °C
DS13203
–
Rev 1
–
December 2019
For further information contact your local STMicroelectronics sales office.
TN2015H-6I
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (limiting values), T
j
= 25 °C unless otherwise specified
Symbol
Parameter
Value
20
Unit
I
T =
113 °C
c
RMS on-state current (180 ° conduction angle)
A
T(RMS)
T =
112 °C
c
13
I
T =
130 °C
Average on-state current (180 ° conduction angle)
8
A
A
T(AV)
c
T =
139 °C
c
5
t =
8.3 ms
p
197
180
162
I
Non repetitive surge peak on-state current (T
initial = 25 °C)
TSM
j
t =
10 ms
p
2
2
2
t =
10 ms
p
I t value for fusing, (T initial = 25 °C)
I t
A s
j
I
= 2 x I
, tr ≤ 100 ns
GT
G
dl/dt
f = 60 Hz
100
600
A/µs
Critical rate of rise of on-state current
Repetitive peak off-state voltage
Non Repetitive peak off-state voltage
Peak gate current
V
/V
V
V
DRM RRM
V
/V
t =
10 ms
p
V
/V
+ 100 V
DSM RSM
DRM RRM
I
t =
20 µs
p
T =
150 °C
j
4
1
5
A
GM
P
T =
150 °C
j
Average gate power dissipation
Maximum peak reverse voltage
Storage junction temperature range
W
V
G(AV)
V
RGM
T
-40 to +150
°C
°C
°C
V
stg
T
j
Maximum operating junction temperature
Maximum lead temperature soldering during 10 s
Insulation rms voltage, 1 minute
-40 to +150
260
T
l
V
2500
iso
Table 2.
Electrical characteristics (T
j
= 25 °C unless otherwise specified)
Test conditions
Symbol
Value Unit
Typ.
6
I
mA
15
GT
V
V
= 12
V
, R
=
3
3 Ω
Max.
Max.
Min.
Max.
Max.
Min.
Typ.
Typ.
D
L
V
1.3
0.1
50
V
V
GT
V
= V
, R
= 3.3 kΩ
T =
150 °C
GD
D
DRM
L
j
I
I =
500 mA, gate open
T
mA
mA
H
I
I =
1.2 x I
G GT
60
L
V
D
= 402 V, gate open
T =
150 °C
j
dV/dt
750 V/µs
t
I =
40 A, V
= 402
V
, I
=
2
0 mA, (dI
/dt) max = 0.2 A/µs
T D G
G
1.9
70
µs
µs
gt
t
q
I =
20 A, V
= 402 V, (dI
/dt) max = 30 A/µs, V
= 25 V, dV
/dt = 40 V/µs
T
T =
150 °C
j
D
G
R
D
DS13203
–
Rev 1
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TN2015H-6I
Characteristics
Table 3.
Static characteristics
Test conditions
Symbol
Value
Unit
V
I
= 40 A, t
= 380 µs
T =
25 °C
Max.
Max.
Max.
1.60
0.82
17.5
5
TM
TM
p
j
V
V
T =
150 °C
j
Threshold voltage
Dynamic resistance
TO
R
T =
150 °C
j
mΩ
µA
D
T =
25 °C
j
I
, I
V
= V
; V
= V
DRM R
RRM
Max.
DRM RRM
D
T =
150 °C
j
2
mA
Table 4.
Thermal parameters
Parameter
Symbol
Value
2.1
Unit
R
th(j-c)
Junction to case (DC)
Max.
Typ.
°C/W
R
th(j-a)
Junction to ambient (DC)
60
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Rev 1
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TN2015H-6I
Characteristics (curves)
1.1
Characteristics curves
Figure 1.
Maximum power dissipation versus average on-
state current
Figure 2.
Average and DC on-state current versus case
temperature
I
(A)
P(W)
20
T
(AV)
22
20
18
16
14
12
10
8
α = 180 °
DC
18
16
14
12
10
8
DC
α = 120 °
α = 180°
α = 90 °
α = 120°
α = 90°
α = 60 °
α = 60°
α = 30 °
α = 30°
6
6
360 °
4
4
2
2
T (°C)
c
I
(A)
T
(AV)
14
α
0
0
0
25
50
75
100
125
150
0
2
4
6
8
10
12
16
Figure 3.
Average and D.C. on state current versus
ambient temperature
Figure 4.
Relative variation of thermal impedance junction
to case and junction to ambient versus pulse duration
I
(A)
T(AV)
K = [Z
/ R
]
th th
3
1.0E+00
1.0E-01
1.0E-02
Z
th(j-c)
DC
2.5
2
Z
α = 180 °
th(j-a)
1.5
1
0.5
t (s)
P
T (°C)
a
0
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
0
25
50
75
100
125
150
Figure 5.
Relative variation of gate triggering current and
gate voltage versus junction temperature (typical values)
Figure 6.
Relative variation of holding and latching
current versus junction temperature (typical values)
I
, V
[ T
] / I
, V
[ T
= 25 °C]
GT GT
GT GT
I ,
I [
T ]
/ I
, I
[ T
= 25 °C]
H
L
H L
j
j
j
j
2.4
2.0
1.6
1.2
0.8
0.4
0.0
2.5
2.0
1.5
1.0
0.5
0.0
I
GT
I
H
I
L
V
GT
T (°C)
j
T (°C)
j
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
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TN2015H-6I
Characteristics (curves)
Figure 7.
Relative variation of static dV/dt immunity
versus junction temperature
Figure 8.
Surge peak on-state current versus number of
cycles
I
TSM
(A)
200
dV/dt [T ] / dV/dt [T = 150 °C]
j
j
12
Non repetitive T
= 25 °C
j
t
p
=10ms
One cycle
Above test equipment capability
150
8
100
Repetitive T
= 113 °C
c
4
V
D
= V
R
= 402 V
50
T (°C)
Number of cycles
100
j
0
25
0
50
75
100
125
150
1
10
1000
Figure 9.
Non repetitive surge peak on-state current for a
sinusoidal pulse with width t
p
< 10 ms
Figure 10.
On-state characteristics (maximum values)
I
(A)
TM
I
(A)
1000
100
10
TSM
10000
1000
100
T initial
= 25 °C
j
T max:
= 0.82 V
t0
R
d
= 17.5 mΩ
I
j
TSM
V
dl/dt limitation: 100 A/µs
T =
150 °C
j
T =
25 °C
j
V
(V)
TM
3.5
t (ms)
p
1
10
0
0.5
1
1.5
2
2.5
3
4
0.01
0.1
1
10
Figure 11.
Relative variation of leakage current versus junction
I
, I
DRM RRM
[ T
; V
j
, V
DRM RRM
] / I
, I
[ 150 °C; 600 V ]
DRM RRM
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
V
=
V
=
RRM
600 V
DRM
T (°C)
j
25
50
75
100
125
150
DS13203
–
Rev 1
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TN2015H-6I
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
2.1
TO-220AB insulated package information
•
•
•
•
Molding compound resin is halogen-free and meets flammability standard UL94 level 0
Lead-free package leads finishing
ECOPACK2
compliant
Recommended torque: 0.4 to 0.6 N.m
Figure 12.
TO-220AB insulated package outline
C
B
I
b2
Resin gate 0.5 mm
max. protusion
(1)
L
F
A
I4
l3
l2
c2
a1
a2
M
c1
Resin gate 0.5 mm
max. protusion
(1)
b1
e
(1)Resin gate position accepted in one of the two positions or in the symmetrical opposites.
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TN2015H-6I
TO-220AB insulated package information
Table 5.
TO-220AB insulated package mechanical data
Dimensions
Typ.
Ref.
Millimeters
Typ.
Min.
Max.
Min.
Max.
A
a1
a2
B
15.20
15.90
0.5984
0.6260
3.75
0.1476
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.73
2.65
1.14
1.14
15.80
14.00
10.40
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.88
2.95
1.70
1.70
16.80
0.5118
0.3937
0.0240
0.0484
0.1732
0.0193
0.0945
0.0945
0.2441
0.1469
0.1043
0.0449
0.0449
0.6220
0.5512
0.4094
0.0346
0.0520
0.1811
0.0276
0.1071
0.1063
0.2598
0.1528
0.1161
0.0669
0.0669
0.6614
b1
b2
C
c1
c2
e
F
I
L
I2
I3
I4
M
16.40
2.6
0.6457
0.1024
1. Inch
dimensions are for reference only.
DS13203
–
Rev 1
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TN2015H-6I
Ordering information
3
Ordering information
Figure 13.
Ordering information scheme
TN 20
15
H – 6
I
Series
TN = SCR
RMS current
20 = 20 A
Gate triggering current
15 = 15 mA
High temperature
H = 150 °C
Voltage
6 = 600 V
Package
I = TO-220AB insulated
Delivery mode
Blank = tube
Table 6.
Ordering information
Order code
Marking
Package
Weight
Base qty.
Delivery mode
TN2015H-6I
TN2015H6I
TO-220AB Ins.
2.3 g
50
Tube
DS13203
–
Rev 1
page 8/10
TN2015H-6I
Revision history
Table 7.
Document revision history
Date
Revision
Changes
Initial release.
16-Dec-2019
1
DS13203
–
Rev 1
page 9/10
TN2015H-6I
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DS13203
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Rev 1
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