STMicroelectronics-TN3015H-6T
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TN3015H-6T
Datasheet
High temperature 30 A, 600 V TO220 thyristor SCRs
A
K
Features
•
•
•
•
•
•
High junction temperature: T
j
= 150 °C
High noise immunity dV/dt = 1000 V/µs up to 150 °C
Gate triggering current I
GT
= 15 mA
Peak off-state voltage V
DRM
/V
RRM
= 600 V
High turn-on current rise dI/dt = 100 A/µs
ECOPACK2
compliant
G
A
Applications
K
A
•
•
•
•
•
•
General purpose AC line load switching
G
Motorbike voltage regulator circuits
Inrush current limiting circuits
Motor control circuits and starters
Heating resistor control, solid state relays
Lighting
TO-220AB
Description
Thanks to a junction temperature T
j
up to 150 °C and a non-isolated TO-220
The trade-off between the device’s noise immunity (dV/dt = 1000 V/μs), its gate
triggering current (I
GT
= 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows
the design of robust and compact control circuits for voltage regulators in motorbikes
and industrial drives, overvoltage crowbar protection, motor control circuits in power
tools and kitchen appliances and inrush current limiting circuits.
Product status
Product summary
Order code
Package
TN3015H-6T
TO-220AB
600 V
V
/V
DRM RRM
T
150 °C
15 mA
j
I
GT
DS12966
–
Rev 2
–
July 2019
For further information contact your local STMicroelectronics sales office.
TN3015H-6T
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (limiting values)
Parameter
Symbol
Value
30
Unit
I
T =
127 °C
RMS on-state current (180 ° conduction angle)
A
T(RMS)
c
T =
127 °C
c
19
I
T =
134 °C
Average on-state current (180 ° conduction angle)
15
A
A
T(AV)
c
T =
141 °C
c
10
t =
8.3 ms
p
295
270
364
I
Non repetitive surge peak on-state current (T
initial = 25 °C)
TSM
j
t =
10 ms
p
2
2
2
t =
10 ms
p
I t value for fusing, (T initial = 25 °C)
I t
A s
j
I
= 2 x I
, tr ≤ 100 ns
GT
G
T =
25 °C
dl/dt
/V
f = 60 Hz
100
600
A/µs
j
Critical rate of rise of on-state current
Repetitive peak off-state voltage
Non Repetitive peak off-state voltage
Peak gate current
V
V
V
DRM RRM
V
/V
t =
10 ms
p
T =
25 °C
j
V
/V
+100
DSM RSM
DRM RRM
I
t =
20 µs
p
T =
150 °C
j
4
1
5
A
GM
P
T =
150 °C
j
Average gate power dissipation
Maximum peak reverse gate voltage
Storage junction temperature range
Maximum operating junction temperature
W
V
G(AV)
V
T =
25 °C
j
RGM
T
-40 to +150
-40 to +150
260
°C
°C
°C
stg
T
j
T
Maximum lead temperature soldering during 10 s
l
Table 2.
Electrical characteristics (T
j
= 25 °C unless otherwise specified)
Test conditions
Symbol
Value Unit
Typ.
6
I
mA
15
GT
V
V
= 12
V
, R
=
3
3 Ω
Max.
Max.
Min.
D
L
V
1.3
0.15
60
V
V
GT
V
= V
, R
= 3.3 kΩ
T =
150 °C
j
GD
D
DRM
L
I
I =
500 mA, gate open
T
Max.
Max.
mA
mA
H
I
I =
1.2 x I
G GT
75
L
V
D
= 402 V, gate open
T =
150 °C
j
dV/dt
Min. 1000 V/µs
t
I =
60 A, V
= 600
V
, I
=
1
00 mA, (dI
/dt) max = 0.2 A/µs
T D G
G
Typ.
Typ.
1.9
80
µs
µs
gt
t
I =
30 A, V
= 402
V
,
(
di/dt)off = 30 A/µs, V
= 25 V, dV
/dt = 50 V/µs
T =
150 °C
j
q
T
D
R
D
DS12966
–
Rev 2
page 2/10
TN3015H-6T
Characteristics
Table 3.
Static characteristics
Test conditions
Symbol
Value Unit
V
I
= 60 A, t
= 380 µs
T =
25 °C
j
Max.
1.6
TM
TM
p
V
V
T =
150 °C
Threshold voltage
Dynamic resistance
Max. 0.84
TO
j
R
T =
150 °C
j
Max.
14
10
5
mΩ
µA
D
T =
25 °C
j
I
,
DRM
V
= V
; V
= V
DRM R
RRM
Max.
D
I
RRM
T =
150 °C
j
mA
Table 4.
Thermal parameters
Parameter
Symbol
Value Unit
R
Junction to case (DC)
Junction to ambient
Max.
Typ.
0.85
°C/W
60
th(j-c)
R
th(j-a)
DS12966
–
Rev 2
page 3/10
TN3015H-6T
Characteristics (curves)
1.1
Characteristics curves
Figure 1.
Maximum power dissipation versus average on-
state current
Figure 2.
Average and DC on-state current versus case
temperature
P(W)
30
I
(A)
T
(AV)
35
30
25
20
15
10
5
α = 180 °
DC
DC
α = 120 °
25
20
15
10
5
α = 90 °
α = 60 °
α = 30 °
α = 180 °
α = 120 °
α = 90 °
α = 60 °
α = 30 °
360 °
T (°C)
c
I
(A)
α
T
(AV)
25
0
0
0
5
10
15
20
0
25
50
75
100
125
150
Figure 3.
Average and D.C. on state current versus
ambient temperature
Figure 4.
On-state characteristics (maximum values)
I
(A)
TM
I
(A)
1000
100
10
T(AV)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
DC
α = 180 °
T max:
j
V
= 0.84 V
t0
R
d
= 14 mΩ
T =
150 °C
j
T =
25 °C
j
V
(V)
TM
4.0
T (°C)
a
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.5
0
25
50
75
100
125
150
Figure 5.
Relative variation of thermal impedance junction
to case and junction to ambient versus pulse duration
Figure 6.
Relative variation of gate trigger current and
gate voltage versus junction temperature (typical values)
K = [Z
/ R
]
I
, V
[ T
] / I
, V
[ T
= 25 °C]
GT GT
GT GT
th th
j
j
1,0E+00
2.5
2.0
1.5
1.0
0.5
0.0
Z
th(j-c)
I
GT
1,0E-01
Z
th(j-a)
V
GT
1,0E-02
1,0E-03
T (°C)
j
t (s)
P
-50
-25
0
25
50
75
100
125
150
1,0E-03
1,0E-02
1,0E-01
1,0E+00
1,0E+01
1,0E+02
1,0E+03
DS12966
–
Rev 2
page 4/10
TN3015H-6T
Characteristics (curves)
Figure 7.
Relative variation of holding and latching
current versus junction temperature (typical values)
Figure 8.
Relative variation of static dV/dt immunity
versus junction temperature (typical values)
I
, I
[ T
] / I
, I
[ T
= 25 °C]
dV/dt [T ] / dV/dt [T = 150 °C]
H
L
j
H
L
j
j
j
5
4
3
2
1
0
2.5
2.3
2.0
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
V
= 402 V
D
I
H
I
L
T (°C)
T (°C)
j
j
-50
-25
0
25
50
75
100
125
150
25
50
75
100
125
150
Figure 10.
Non repetitive surge peak on-state current for a
sinusoidal pulse with width t
p
< 10 ms
Figure 9.
Surge peak on-state current versus number of
cycles
I
(A)
I
TSM
(A)
300
TSM
10000
1000
100
T initial
= 25 °C
j
dl/dt limitation: 100 A/µs
Non repetitive T
= 25 °C
j
I
t
p
=10ms
TSM
One cycle
200
Repetitive T
= 127°C
100
c
Number of cycles
100
t (ms)
p
0
10
0.01
1
10
1000
0.10
1.00
10.00
Figure 11.
Relative variation of leakage current versus junction temperature
I
, I
DRM RRM
[ T
; V
j
, V
DRM RRM
] / I
, I
[ 150 °C; 600 V ]
DRM RRM
1.0E+00
1.0E-01
1.0E-02
1.0E-03
V
=
V
= 600
V
RRM
DRM
1.0E-04
1.0E-05
T (°C)
j
25
50
75
100
125
150
DS12966
–
Rev 2
page 5/10
TN3015H-6T
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
2.1
TO-220AB package information
•
•
•
•
Molding compound resin is halogen-free and meets flammability standard UL94 level 0
Lead-free package leads finishing
ECOPACK2
compliant
Recommended torque: 0.4 to 0.6 N.m
Figure 12.
TO-220AB package outline
C
B
I
b2
Resin gate 0.5 mm
max. protusion
(1)
L
F
A
I4
l3
l2
c2
a1
a2
M
c1
Resin gate 0.5 mm
max. protusion
(1)
b1
e
(1)Resin gate position accepted in one of the two positions or in the symmetrical opposites.
DS12966
–
Rev 2
page 6/10
TN3015H-6T
TO-220AB package information
Table 5.
TO-220AB package mechanical data
Dimensions
Millimeters
Ref.
Min.
Typ.
Max.
Min.
Typ.
Max.
A
a1
a2
B
15.20
15.90
0.5984
0.6260
3.75
0.1476
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.73
2.65
1.14
1.14
15.80
14.00
10.40
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.88
2.95
1.70
1.70
16.80
0.5118
0.3937
0.0240
0.0484
0.1732
0.0193
0.0945
0.0945
0.2441
0.1469
0.1043
0.0449
0.0449
0.6220
0.5512
0.4094
0.0346
0.0520
0.1811
0.0276
0.1071
0.1063
0.2598
0.1528
0.1161
0.0669
0.0669
0.6614
b1
b2
C
c1
c2
e
F
I
L
I2
I3
I4
M
16.40
2.6
0.6457
0.1024
1. Inch
dimensions are for reference only.
DS12966
–
Rev 2
page 7/10
TN3015H-6T
Ordering information
3
Ordering information
Figure 13.
Ordering information scheme
TN 30 15 H – 6 T
Series
TN = SCR
Rms current
30 = 30 A
Gate sensitivity
15 = 15 mA
High temperature
Voltage
6 = 600 V
Package
T = TO-220AB
Delivery mode
Blank = tube
Table 6.
Ordering information
Order code
Marking
Package
Weight
Base qty.
Delivery mode
TN3015H-6T
TN3015H6
TO-220AB
2.3 g
50
Tube
DS12966
–
Rev 2
page 8/10
TN3015H-6T
Revision history
Table 7.
Document revision history
Revision
Date
Changes
22-May-2019
08-Jul-2019
1
2
Initial release.
Updated cover image.
DS12966
–
Rev 2
page 9/10
TN3015H-6T
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DS12966
–
Rev 2
page 10/10
