STMicroelectronics-TN4015H-6T

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STMicroelectronics-TN4015H-6T
TN4015H-6T  
Datasheet  
40 A 600 V 150 °C junction temperature SCR in TO-220AB package  
Features  
A2  
A1  
•
•
•
•
•
•
High junction temperature : T

j

= 150 °C  
High noise immunity dV/dt = 500 V/µs up to 150 °C  
Gate triggering current I

GT

= 15 mA  
G
Off-state voltage 600 V V

DRM

/V

RRM  

A2  
High turn on current rise dI/dt = 100 A/µs  

ECOPACK2

compliant component  
G
Applications  
A2  
A1  
•
•
•
•
Motorbike voltage regulator circuits  
TO-220AB  
Inrush current limiting circuit  
Motor control circuits and starters  
Solid state relays  
Description  
The TN4015H-6T in non-isolated TO-220AB package offers high thermal  
performances up to 40 A, thanks to its junction temperature up to 150°C.  
Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current  
(I

GT

= 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust  
and compact control circuit for voltage regulator in motorbikes and industrial drives,  
overvoltage crowbar protection, motor control circuits in power tools and kitchen aids,  
inrush current limiting circuits.  
Product status link  
Product summary  
I
40 A  
600 V  
T(RMS)  
V
/V  
DRM RRM  
V
/V  
800 V  
DSM RSM  
I
15 mA  
GT  
Package  
TO-220AB  
DS11764
–
Rev 2
–
December 2021  
For further information contact your local STMicroelectronics sales office.  

TN4015H-6T  
TN4015H-6T_Characteristics  
1
TN4015H-6T_Characteristics  
Table 1.
Absolute maximum ratings (limiting values), T

j

= 25 °C unless otherwise specified  
Symbol  
Parameter  
Value  
40  
Unit  
I
T =
 
119 °C  
c
RMS on-state current (180 ° conduction angle)  
A
T(RMS)  
T =
 
120 °C  
c
25  
I
T =
 
125 °C  
Average on-state current (180 ° conduction angle)  
Non repetitive surge peak on-state current  
22  
A
A
T(AV)  
c
T =
 
128 °C  
c
20  
t =
 
8.3 ms  
p
394  
360  
648  
I
TSM  
t =
 
10 ms  
p
2
2
2
t =
 
10 ms  
p
I t  
I t
 
value for fusing  
A s  
Critical rate of rise of on-state current  
dl/dt  
f = 60 Hz  
100  
A/µs  
I
= 2 x I
 
, tr ≤ 100 ns  
G
GT  
V
/V  
T =
 
150 °C  
Repetitive peak off-state voltage  
600  
V
V
DRM RRM  
j
V
/V  
t =
 
10 ms  
p
Non repetitive surge peak off-state voltage  
800  
DSM RSM  
I
t =
 
20 µs  
p
T =
 
150 °C  
j
Peak gate current  
4
A
GM  
P
T =
 
150 °C  
j
Average gate power dissipation  
1
5
W
V
G(AV)  
V
Maximum peak reverse gate voltage  
RGM  
T
Storage junction temperature range  
-40 to +150  
-40 to +150  
260  
°C  
°C  
°C  
stg  
T
Maximum operating junction temperature  
Maximum lead temperature soldering during 10 s  
j
T
L
Table 2.
Electrical characteristics (T

j

= 25 °C unless otherwise specified)  
Symbol  
Test Conditions  
Value  
Unit  
mA  
V
I
Max.  
Max.  
Min.  
Max.  
Max.  
Min.  
Typ.  
15  
1.3  
0.15  
60  
GT  
V
V
= 12
V
, R
 
=
3
3 Ω  
L
D
V
GT  
V
= V  
, R
 
= 3.3 kΩ  
T =
 
150 °C  
V
GD  
D
DRM  
L
j
I
I =
 
500 mA, gate open  
T
mA  
mA  
V/µs  
µs  
H
I
I =
 
1.2 x I  
G GT  
80  
L
V
D
= 402 V, gate open  
T =
 
150 °C  
j
dV/dt  
500  
1.9  
t
I =
 
80 A, V
 
= 600
V
, I
 
=
1
00 mA, (dI
 
/dt) max = 0.2 A/µs  
T D G
 
G  
gt  
V
= 402
V
, I
 
=
4
0 A, V
 
= 25
V
,
d
V
 
/dt = 50 V/µs,  
T R
 
D  
D
t
T =
 
150 °C  
j
Typ.  
85  
µs  
q
(dI /dt)max
 
= 30 A/µs  
G
DS11764
–
Rev 2  
page 2/10  
 

TN4015H-6T  
TN4015H-6T_Characteristics  
Table 3.
Static characteristics  
Test conditions  
Symbol  
Value  
1.6  
0.85  
10  
Unit  
V
I
= 80 A, t
 
= 380 µs  
T =
 
25 °C  
j
Max.  
Max.  
Max.  
TM  
TM  
p
V
V
T =
 
150 °C  
j
Threshold voltage  
Dynamic resistance  
TO  
R
D
T =
 
150 °C  
j
mΩ  
µA  
T =
 
25 °C  
j
10  
I
, I  
V
= V  
= V  
DRM RRM  
Max.  
DRM RRM  
D
T =
 
150 °C  
j
6
mA  
Table 4.
Thermal parameters  
Parameter  
Symbol  
Value  
Unit  
R
Junction to case (DC)  
Max.  
Typ.  
0.8  
60  
th(j-c)  
°C/W  
R
th(j-a)  
Junction to ambient (DC)  
DS11764
–
Rev 2  
page 3/10  

TN4015H-6T  
Characteristics (curves)  
1.1  
Characteristics curves  
Figure 1.
Maximum average power dissipation versus  
average on-state current  
Figure 2.
Average and DC on-state current versus case  
temperature  
P(W)  
40  
I
(A)  
T(AV)  
50  
40  
30  
20  
10  
0
α = 180°  
D.C  
α = 120°  
D.C  
α = 180°  
α = 120°  
α = 9
0
°  
α = 6
0
°  
α = 3
0
°  
α = 9
0
°  
30  
20  
10  
0
α = 6
0
°  
α = 3
0
°  
360°  
α
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
30  
35  
I
(A)  
T
(°C)  
T(AV)  
C
Figure 3.
Average and D.C. on state current versus  
ambient temperature  
Figure 4.
Relative variation of thermal impedance versus  
pulse duration  
K = [Z
 
/R  
]
th th  
1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
I
(A)  
T(AV)  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Z
th(j-c)  
Z
D.C  
th(j-a)  
α = 180 °  
1.0E-03  
1.0E-02  
1.0E-01  
1.0E+00  
(s)  
1.0E+01  
1.0E+02  
1.0E+03  
0
25  
50  
75  
(°C)  
100  
125  
150  
t
p
T
a
Figure 5.
Relative variation of gate trigger current and  
gate voltage versus junction temperature (typical values)  
Figure 6.
Relative variation of holding and latching  
current versus junction temperature (typical values)  
I
, I
 
[T ] / I
 
, I
 
[T =
 
25 °C]  
I
, V
 
[T ] / I
 
, V
 
[T =
 
25 °C]  
GT j  
H
L
j
H
L
j
GT  
GT  
j
GT  
2.5  
2.3  
2.0  
1.8  
1.5  
1.3  
1.0  
0.8  
0.5  
0.3  
0.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
I
GT  
I
H
V
GT  
I
L
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
T (°C)  
j
T (°C)  
j
DS11764
–
Rev 2  
page 4/10  

TN4015H-6T  
Characteristics (curves)  
Figure 7.
Relative variation of static dV/dt immunity  
versus junction temperature  
Figure 8.
Surge peak on-state current versus number of  
cycles  
d
V
/d
t
[ T
 
] / d
V
/d
t
[ T
 
= 150 °C ]  
j
j
12  
11  
I

TSM

(A)  
450  
V
= 402 V  
D
10  
9
400  
t

p

=10ms  
Non repetitive  
T
initial = 25 °C  
j
Above test equipment capability  
350  
One cycle  
8
7
6
5
4
300  
250  
200  
Repetitive  
T = 119 °C  
150  
100  
50  
3
2
c
1
0
0
90  
95 100
 
105 110
 
115 120
 
125  
130 135 140
 
145 150  
1
10  
100  
1000  
T (°C)  
j
Number of cycles  
Figure 9.
Non repetitive surge peak on-state current for a  
sinusoidal pulse with width tp < 10 ms  
Figure 10.
On-state characteristics (maximum values)  
I
(A)  
TM  
1000  
100  
10  
I
(A)  
TSM  
10000  
1000  
100  
T

j

initial = 25 °C  
dI/dt limitation: 100 A/µs  
I

TSM  

T

j

max :  
V

TO

= 0.85 V  
R

d

= 10 mΩ  
T

j

= 150 °C  
T

j

= 25 °C  
1
10  
0.0  
1.0  
2.0  
3.0  
4.0  
0.01  
0.10  
1.00  
10.00  
V
(V)  
TM  
t
(ms)  
p
Figure 11.
Relative variation of leakage current versus junction temperature  
I
, I  
[T ; V  
, V  
] / I  
, I  
[150 °C; 600 V]  
DRM RRM  
j
DRM  
RRM  
DRM RRM  
1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
V

DRM

= V

RRM

= 600 V  
25  
50  
75  
100  
125  
150  
T (°C)  
j
DS11764
–
Rev 2  
page 5/10  

TN4015H-6T  
Package information  
2
Package information  
In order to meet environmental requirements, ST offers these devices in different grades of

packages,  
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product  
status are available at:

. ECOPACK is an ST trademark.  
2.1  
TO-220AB package information  
•
•
•
Molding compound resin is halogen free and meets UL94 flammability standard, level V0  
Lead-free plating package leads  
Recommended torque: 0.4 to 0.6 N·m  
Figure 12.
TO-220AB package outline  
DS11764
–
Rev 2  
page 6/10  

TN4015H-6T  
TO-220AB package
 
information  
Table 5.
TO-220AB package mechanical data  
Dimensions  
Millimeters  
Inches

Ref.  
Min.  
Typ.  
Max.  
Min.  
Typ.  
Max.  
A
a1  
a2  
B
15.20  
15.90  
0.5984  
0.6260  
3.75  
0.1476  
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.73  
2.65  
1.14  
1.14  
15.80  
14.00  
10.40  
0.88  
1.32  
4.60  
0.70  
2.72  
2.70  
6.60  
3.88  
2.95  
1.70  
1.70  
16.80  
0.5118  
0.3937  
0.0240  
0.0484  
0.1732  
0.0193  
0.0945  
0.0945  
0.2441  
0.1469  
0.1043  
0.0449  
0.0449  
0.6220  
0.5512  
0.4094  
0.0346  
0.0520  
0.1811  
0.0276  
0.1071  
0.1063  
0.2598  
0.1528  
0.1161  
0.0669  
0.0669  
0.6614  
b1  
b2  
C
c1  
c2  
e
F
I
L
I2  
I3  
I4  
M
16.40  
2.6  
0.6457  
0.1024  
1. Inch
 
dimensions are for reference only.  
DS11764
–
Rev 2  
page 7/10  
 

TN4015H-6T  
TN4015H-6T_Ordering information  
3
Ordering information  
Figure 13.
Ordering information scheme  
TN 40
 
15  
H
6
T
Series  
TN = SCR  
Current  
40 = 40 A  
Gate sensitivity  
1
5
=
1
5
 
m
A  
High temperature  
Voltage  
6 = 600 V  
Package  
T=TO-220AB  
Packing mode  
Blank = tube  
Table 6.
Ordering information  
Order code  
Marking  
Package  
Weight  
Base qty.  
Delivery mode  
TN4015H-6T  
TN4015H6  
TO-220AB  
2.3 g  
50  
Tube  
DS11764
–
Rev 2  
page 8/10  

TN4015H-6T  
Revision history  
Table 7.
Document revision history  
Date  
Revision  
Changes  
03-Aug-2016  
10-Dec-2021  
1
2
Initial release.  
Updated

.  
DS11764
–
Rev 2  
page 9/10  

TN4015H-6T  
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.
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DS11764
–
Rev 2  
page 10/10