STMicroelectronics-TN5050H-12PI
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TN4050-12PI
40 A, 1200 V standard SCR
Features
A
K
•
•
•
Max. repetitive blocking voltage = V
DRM
, V
RRM
= 1200 V
I
GT
maximum = 50 mA
High static and dynamic commutation:
G
–
–
dI/dt = 100 A/µs
dV/dt = 2000 V/µs
•
•
ECOPACK2
component (RoHS and HF compliance)
Complies with UL 1557 standard (file ref : E81734)
K
A
G
Application
TOP3 Isolated
•
•
•
•
•
•
•
•
•
•
•
•
Solar / Wind renewable energy inverters and rectifiers
Solid state relay (SSR)
Uninterruptible power supply (UPS)
Industrial SMPS
Bypass
Product status
AC DC inrush current limiter (ICL)
Battery charger
AC DC voltage controlled rectifier
Industrial welding systems
Off board automotive battery charger
Soft starter
Product summary
Order code
Package
TN4050-12PI
TOP3 isolated
40 A
Heating systems
I
T(RMS)
V
/V
1200 V
50 mA
DRM RRM
Description
I
GT
required with a lower gate current and ceramic isolated tab, UL1557 certified rated at
2.5 kV RMS and UL94-V0 resin compliance.
Available in through-hole high power package TOP3 isolated tab.
DS12925
–
Rev 2
–
July 2023
For further information contact your local STMicroelectronics sales office.
TN4050-12PI
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (limiting values)
Parameter
Symbol
Value
40
Unit
I
On-state RMS current (180 ° conduction angle)
T(RMS)
T =
82.5 °C
c
A
I
Average on-state current (180 ° conduction angle)
25
T(AV)
t =
8.3 ms
420
400
800
p
I
Non repetitive surge peak on-state current ( T
initial = 25 °C)
A
TSM
j
t =
10 ms
p
2
2
2
t =
10 ms
p
I t
I t
value for fusing
A s
Critical rate of rise of on-state current
T =
125 °C
j
dl/dt
f = 60 Hz
100
A/µs
I
= 100 mA, dI /dt = 1 A/µs
G
g
I
Maximum peak positive gate current
Maximum peak positive gate voltage
Average gate power dissipation
8
A
V
GM
t =
20 µs
p
T =
125 °C
j
V
5
1
GM
P
T =
125 °C
j
W
V
G(AV)
V
Maximum peak reverse gate voltage
Storage junction temperature range
Operating junction temperature range
3.5
RGM
T
-40 to +150
-40 to +125
stg
°C
T
j
Table 2.
Electrical characteristics (T
j
= 25 °C unless otherwise specified)
Test conditions
Symbol
Value Unit
Min.
10
I
mA
50
GT
V
V
= 12
V
, R
=
3
3 Ω
Max.
Max.
Min.
Max.
Max.
Min.
Typ.
Typ.
D
D
L
V
1.5
0.2
100
130
2
V
V
GT
V
= V
, R
= 3.3 kΩ
T =
125 °C
GD
DRM
L
j
I
I =
500 mA, gate open
T
mA
mA
kV/µs
µs
H
I
I =
1.2 x I
G GT
L
V
= 67% V
, gate open
DRM
T =
125 °C
j
dV/dt
D
t
I =
40 A, V
= V
T
, I
= 200 mA, (dI
/dt) max = 0.2 A/µs
DRM G
G
2
gt
D
t
I
= 40 A, V
= 800
V
,
d
l
/dt = 30 A/µs, V
= 75
V
,
d
V
/dt = 20 V/µs
T =
125 °C
j
100
µs
q
TM
D
TM
R
D
Table 3.
Static characteristics
Test conditions
Symbol
Value
Unit
V
I
= 80 A, t
= 380 µs
T =
25 °C
Max.
Max.
Max.
1.75
0.9
9.8
10
TM
TM
p
j
V
V
T =
125 °C
j
Threshold voltage
Dynamic resistance
TO
R
T =
125 °C
j
mΩ
µA
D
T =
25 °C
j
I
, I
V
= V
= 1200 V
RRM
Max.
DRM RRM
DRM
T =
125 °C
j
5
mA
DS12925
–
Rev 2
page 2/10
TN4050-12PI
Characteristics
Table 4.
Thermal parameters
Parameter
Symbol
Value
1.1
Unit
R
Junction to case (DC)
th(j-c)
Typ.
°C/W
R
th(j-a)
Junction to ambient (DC)
50
DS12925
–
Rev 2
page 3/10
TN4050-12PI
Characteristics curves
1.1
Characteristics curves
Figure 1.
Maximum average power dissipation versus
average on-state current
Figure 2.
Average and DC on-state current versus case
temperature
I
(A)
T
(AV)
65
60
55
50
45
40
35
30
25
20
15
10
5
P(W)
45
α = 180 °
40
α = 120 °
DC
α = 90 °
35
α = 60 °
DC
30
α = 30 °
25
20
15
α = 180 °
α = 120 °
α = 90 °
α = 60 °
α = 30 °
360 °
10
T (°C)
c
5
0
I
(A)
0
α
T
(AV)
0
25
50
75
100
125
0
5
10
15
20
25
30
35
40
45
50
Figure 4.
Average and D.C. on-state current versus
ambient temperature
Figure 3.
On-state characteristics (maximum values)
I
(A)
TM
I
(A)
1000
T
(AV)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
DC
100
α = 180 °
T max:
j
V
= 0.9 V
t0
Rd = 9.8 mΩ
10
1
T
(°C)
T =
125 °C
j
T =
25 °C
a
V
(V)
j
TM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
25
50
75
100
125
Figure 5.
Relative variation of thermal impedance junction
Figure 6.
Surge peak on-state current versus number of
to case and junction to ambient versus pulse duration
cycles
K = [Z
/ R
]
I
(A)
th th
TSM
1.0E+00
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
Non repetitive T
= 25 °C
j
Z
th(j-c)
t
p
=10ms
One cycle
Z
th(j-a)
1.0E-01
Repetitive T
= 82.5 °C
c
t (s)
P
Number of cycles
1.0E-02
1.0E-03
0
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1
10
100
1000
DS12925
–
Rev 2
page 4/10
TN4050-12PI
Characteristics curves
Figure 8.
Relative variation of gate trigger current and
gate trigger voltage versus junction temperature
(typical value)
Figure 7.
Non repetitive surge peak on-state current for a
sinusoidal pulse with width t
p
< 10 ms
I
(A)
TSM
I
V
[ T
] / I
j
V [
T =
25 °C]
G
T
,
G
T
j
10000
1000
100
G
T
,
G
T
dl/dt limitation: 100 A/µs
2.5
2.0
1.5
1.0
0.5
0.0
T initial
= 25 °C
j
I
GT
I
TSM
V
GT
t (ms)
p
T (°C)
j
10
0.01
0.10
1.00
10.00
-40
-20
0
20
40
60
80
100
120
Figure 9.
Relative variation of holding and latching
current versus junction temperature (typical value)
Figure 10.
Relative variation of static dV/dt immunity
versus junction temperature
I
I
[ T
] / I
j
I
[ T
= 25 °C]
dV/dt [T
j
] / dV/dt [T
j
=125 °C]
H, L
H, L
j
6
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
V
D
=V
R
=800 V
I
H
5
4
3
2
1
I
L
T (°C)
j
T (°C)
j
0
-40
-20
0
20
40
60
80
100
120
25
50
75
100
125
Figure 11.
Relative variation of leakage current versus junction temperature for different values of
blocking voltage (typical values)
I
, I
DRM RRM
[ T
;V
, V
] / I
/ I
j
DRM
RRM DRM
RRM
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
V
DRM
=V
RRM
=1000 V
V
DRM
=V
RRM
=1200 V
V
DRM
=V
RRM
=600 V
T (°C)
j
25
50
75
100
125
DS12925
–
Rev 2
page 5/10
TN4050-12PI
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
2.1
TOP3 Isolated package information
•
•
•
•
ECOPACK
(lead-free plating and halogen free package compliance)
Lead-free package leads finishing
Halogen-free molding compound resin meets UL94 standard level V0
Recommended torque: 1.05 N·m (max. torque: 1.2 N·m)
Figure 12.
Package outline
DS12925
–
Rev 2
page 6/10
TN4050-12PI
TOP3 Isolated package information
Table 5.
Mechanical data
Dimensions
Ref.
mm
Min.
4.40
1.45
14.35
0.50
2.70
15.80
20.40
15.10
5.40
3.40
4.08
1.10
Typ.
Max.
4.60
Min.
Typ.
Max.
A
B
C
D
E
F
G
H
J
0.1732
0.0571
0.5650
0.0197
0.1063
0.6220
0.8031
0.5945
0.2126
0.1339
0.1606
0.0430
0.1811
0.0610
0.6142
0.0276
0.1142
0.6496
0.8307
0.6102
0.2224
0.1437
0.1642
0.0510
1.55
15.60
0.70
2.90
16.50
21.10
15.50
5.65
K
L
3.65
4.17
P
R
1.30
4.60
0.1811
1. Inches
given for reference only
DS12925
–
Rev 2
page 7/10
TN4050-12PI
Ordering information
3
Ordering information
Figure 13.
Ordering information scheme
TN 40
50
–
12 PI
Series
TN = SCR
RMS current
40 = 40 A
Gate current
5
0
=
5
0
mA
Voltage
12 = 1200 V
Package
PI = TOP3 Isolated
Table 6.
Ordering information
Order code
Marking
Package
Weight
Base qty.
Delivery mode
TN4050-12PI
TN405012PI
TOP3 Isolated
4.48 g
30
Tube
DS12925
–
Rev 2
page 8/10
TN4050-12PI
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DS12925
–
Rev 2
page 10/10
