STMicroelectronics-TN6050-12PI
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TN6050-12PI
Datasheet
60 A, 1200 V standard SCR
Features
A
K
•
•
•
Max. Repetitive Blocking Voltage = V
DRM
, V
RRM
= 1200 V
G
I
GT
maximum = 50 mA
High static and dynamic commutation:
–
–
dI/dt = 100 A/µs
dV/dt = 2000 V/µs
•
•
Complies with UL 1557 standard (File ref : E81734)
K
A
G
Applications
TOP3 Isolated
•
•
•
•
•
•
•
•
•
•
•
•
Solar / Wind renewable energy inverters and rectifiers
Solid state relay (SSR)
Uninterruptible power supply (UPS)
Industrial SMPS
Bypass
AC DC inrush current limiter (ICL)
Battery charger
AC DC voltage controlled rectifier
Industrial welding systems
Off board automotive battery charger
Soft starter
Product status
Heating systems
Product summary
Description
Order code
Package
TN6050-12PI
TOP3 isolated
60 A
required with a lower gate current and ceramic isolated tab, UL1557 certified rated at
2.5 kV RMS and UL94-V0 resin compliance.
I
T(RMS)
Available in through-hole high power package TOP3 isolated tab.
V
/V
1200 V
DRM RRM
I
50 mA
GT
DS12874
–
Rev 1
–
December 2018
For further information contact your local STMicroelectronics sales office.
TN6050-12PI
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (limiting values)
Parameter
Symbol
Value
60
Unit
I
On-state RMS current (180 ° conduction angle)
T(RMS)
T =
82.2 °C
c
A
I
Average on-state current (180 ° conduction angle)
38
T(AV)
t =
8.3 ms
763
700
2450
p
I
Non repetitive surge peak on-state current ( T
initial = 25 °C)
A
TSM
j
t =
10 ms
p
2
2
2
t =
10 ms
p
I t
I t
value for fusing
A s
Critical rate of rise of on-state current
T =
25 °C
j
dl/dt
100
A/µs
I
= 100 mA, dI
/dt = 1 A/µs
G
g
I
Maximum peak positive gate current
Maximum peak positive gate voltage
Average gate power dissipation
8
A
V
GM
t =
20 µs
p
T =
125 °C
j
V
5
1
GM
P
T =
125 °C
j
W
V
G(AV)
V
RGM
Maximum peak reverse gate voltage
Storage junction temperature range
Operating junction temperature range
3.5
T
-40 to +150
-40 to +125
stg
°C
T
j
Table 2.
Electrical characteristics (T
j
= 25 °C unless otherwise specified)
Test conditions
Symbol
Value Unit
Min.
8
I
mA
50
GT
V
V
= 12 V, R
= 33 Ω
Max.
Max.
Min.
D
L
V
1.3
0.2
V
V
GT
V
= V
, R
= 3.3 kΩ
T =
125 °C
j
GD
D
DRM
L
I
I =
500 mA, gate open
T
Max.
Max.
100
130
mA
mA
H
I
I =
1.2 x I
G GT
L
V
D
= 67% V
, gate open
DRM
T =
125 °C
j
dV/dt
Min. 2000 V/µs
t
I =
50 A, V
= V
, I
= 200 mA, (dI
/dt) max = 0.2 A/µs
DRM G
G
Typ.
Typ.
2
µs
µs
gt
T
D
t
I
= 50 A, V
= 800 V, dl
/dt = 30 A/µs, V
= 75 V, dV
/dt = 20 V/µs
T =
125 °C
j
100
q
TM
D
TM
R
D
Table 3.
Static characteristics
Test conditions
Symbol
Value
1.75
0.93
7.1
Unit
V
I
= 120 A, t
= 380 µs
T =
25 °C
j
Max.
Max.
Max.
TM
TM
p
V
V
T =
125 °C
j
Threshold voltage
Dynamic resistance
TO
R
D
T =
125 °C
j
mΩ
µA
T =
25 °C
j
10
I
, I
V
= V
= 1200 V
RRM
Max.
DRM RRM
DRM
T =
125 °C
j
6.5
mA
DS12874
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Rev 1
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TN6050-12PI
Characteristics
Table 4.
Thermal parameters
Parameter
Symbol
Value
0.70
50
Unit
R
Junction to case (DC)
th(j-c)
Typ.
°C/W
R
th(j-a)
Junction to ambient (DC)
DS12874
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Rev 1
page 3/11
TN6050-12PI
Characteristics (curves)
1.1
Characteristics curves
Figure 1.
Maximum average power dissipation versus
average on-state current
Figure 2.
Average and DC on-state current versus case
temperature
I
(A)
P(W)
T
(AV)
DC
65
65
60
55
50
45
40
35
30
25
20
15
10
5
α = 180 °
60
α = 120 °
DC
55
50
45
α = 90 °
α = 60 °
α = 180 °
α = 30 °
40
α = 120 °
α = 90 °
α = 60 °
35
30
25
20
α = 30 °
360 °
15
10
T (°C)
c
I
(A)
5
0
α
T
(AV)
45
0
0
25
50
75
100
125
0
5
10
15
20
25
30
35
40
50
Figure 4.
Average and D.C. on-state current versus
ambient temperature
Figure 3.
On-state characteristics (maximum values)
I
(A)
TM
I
(A)
T
(AV)
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
DC
α = 180 °
T max:
j
V
= 0.93 V
t0
Rd = 7.1 mΩ
T =
125 °C
j
T =
25 °C
V
(V)
j
TM
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
25
50
75
100
125
Figure 5.
Relative variation of thermal impedance junction
Figure 6.
Surge peak on-state current versus number of
to case and junction to ambient versus pulse duration
cycles
K = [Z
/ R
]
th th
I
(A)
TSM
1.0E+00
1.0E-01
1.0E-02
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
Non repetitive T
= 25 °C
j
Z
th(j-c)
t
p
=10ms
One cycle
Z
th(j-a)
Repetitive T
= 82.2 °C
c
t (s)
P
Number of cycles
100
0
1.0E-03
1.0E-02
1.0E-01
1.0E+00 1.0E+01
1.0E+02 1.0E+03
1
10
1000
DS12874
–
Rev 1
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TN6050-12PI
Characteristics (curves)
Figure 8.
Relative variation of gate trigger current and
gate trigger voltage versus junction temperature (typical
value)
Figure 7.
Non repetitive surge peak on-state current for a
sinusoidal pulse with width t
p
< 10 ms
I
(A)
TSM
I
V
[ T
] / I
j
V [
T =
25 °C]
G
T
,
G
T
j
10000
1000
100
G
T
,
G
T
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
dl/dt limitation: 100 A/µs
T initial
= 25 °C
j
I
GT
I
TSM
V
GT
t (ms)
p
T (°C)
j
10
0.01
0.10
1.00
10.00
-40
-20
0
20
40
60
80
100
120
Figure 9.
Relative variation of holding and latching
current versus junction temperature (typical value)
Figure 10.
Relative variation of static dV/dt immunity
versus junction temperature
I
I
[ T
] / I
j
I
[ T
= 25 °C]
dV/dt [T
j
] / dV/dt [T
j
=125 °C]
H, L
H, L
j
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
6
V
D
=V
R
=800 V
I
H
5
4
3
2
1
I
L
T (°C)
T (°C)
j
j
0
25
50
75
100
125
-40
-20
0
20
40
60
80
100
120
Figure 11.
Relative variation of leakage current versus junction temperature for different values of
blocking voltage (typical values)
I
, I
DRM RRM
[ T
;V
DRM
, V
] / I
/ I
j
RRM DRM
RRM
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
V
DRM
=V
RRM
=1000 V
V
DRM
=V
RRM
=1200 V
V
DRM
=V
RRM
=600 V
T (°C)
j
25
50
75
100
125
DS12874
–
Rev 1
page 5/11
TN6050-12PI
Package information
2
Package information
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
2.1
TOP3 Isolated package information
•
•
•
•
ECOPACK®
(Lead-free plating and Halogen free package compliance)
Lead-free package leads finishing
Halogen-free molding compound resin meets UL94 standard level V0
Recommended torque: 1.05 N·m (max. torque: 1.2 N·m)
DS12874
–
Rev 1
page 6/11
TN6050-12PI
TOP3 Isolated package information
Figure 12.
TOP3 Isolated package outline
DS12874
–
Rev 1
page 7/11
TN6050-12PI
TOP3 Isolated package information
Table 5.
TOP3 Isolated mechanical data
Dimensions
Ref.
mm
Min.
4.40
1.45
14.35
0.50
2.70
15.80
20.40
15.10
5.40
3.40
4.08
1.20
Typ.
Max.
4.60
Min.
Typ.
Max.
A
B
C
D
E
F
0.1732
0.0571
0.5650
0.0197
0.1063
0.6220
0.8031
0.5945
0.2126
0.1339
0.1606
0.0472
0.1811
0.0610
0.6142
0.0276
0.1142
0.6496
0.8307
0.6102
0.2224
0.1437
0.1642
0.0551
1.55
15.60
0.70
2.90
16.50
21.10
15.50
5.65
G
H
J
K
L
3.65
4.17
M
R
1.40
4.60
0.1811
1. Inches
given for reference only
DS12874
–
Rev 1
page 8/11
TN6050-12PI
Ordering information
3
Ordering information
Figure 13.
Ordering information scheme
TN 60
50
–
12 PI
Series
TN = SCR
RMS current
60 = 60 A
Gate current
5
0
=
5
0
mA
Voltage
12 = 1200 V
Package
PI = TOP3 Isolated
Table 6.
Ordering information
Order code
Marking
Package
Weight
Base qty.
Delivery mode
TN6050-12PI
TN605012PI
TOP3 Isolated
4.48 g
30
Tube
DS12874
–
Rev 1
page 9/11
TN6050-12PI
Revision history
Table 7.
Document revision history
Date
Revision
Changes
Initial release.
14-Dec-2018
1
DS12874
–
Rev 1
page 10/11
TN6050-12PI
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DS12874
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Rev 1
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