STMicroelectronics-TPDV1225RG
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TPDVxx25
25 A high voltage
T
r
iacs
Features
A2
■
On-state current (I
): 25 A
T(RMS)
■
Max. blocking voltage (V
/V
): 1200 V
DRM RRM
■
Gate current (I
): 150 mA
GT
G
■
Commutation @ 10 V/µs: up to 88 A/ms
■
Noise immunity: 2 kV/µs
A1
■
Insulated package:
– 2,500
V rms (UL recognized: E81734).
Description
The TPDVxx25 series use high performance
alternistor technolog
y
.
A1
A2
G
Featuring very high commutation levels and high
surge current capabilit
y
,
t
hese devices are well
adapted to power control for inductive and
resistive loads (motor, transformer…) especially
on three-phase power grid.
T
a
rgeted three-phase
applications include heating systems, motor
starters, and induction motor speed control
(especially for fans).
TOP3 insulated
Table 1.
Device summary
Parameter
TPDV825RG
TPDV1025RG
TPDV1225RG
Blocking voltage V
DRM
/V
RRM
On-state current I
T(RMS)
Gate current I
GT
800 V
1000 V
25 A
1200 V
150 mA
January 2012
Doc ID 18268 Rev 2
1/7
7
Characteristics
TPDVxx25
1
Characteristics
Table 2.
Absolute maximum ratings (limiting values)
Parameter
Symbol
I
T(RMS)
Value
Unit
On-state rms current (180° conduction angle)
T
c
= 85 °C
T
j
= 25 °C
T
j
= 25 °C
25
A
t
p
= 2.5 ms
390
250
230
265
Non repetitive surge peak on-state
current
I
TSM
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
A
I
2
t
I
2
t value for fusing
A
2
S
Critical rate of rise of on-state current
I
G
= 500 mA, dI
G
/dt = 1 A/µs
dI/dt
F = 50 Hz
100
A/µs
TPDV825
TPDV1025
TPDV1225
800
1000
1200
V
DRM
V
RRM
Repetitive peak off-state voltage
T
j
= 125 °C
V
Storage junction temperature range
Operating junction temperature range
– 40 to + 150
– 40 to + 125
T
stg
T
j
°C
V
(1)
V
INS(RMS)
Insulation rms voltage
2500
1. A1,
A2, gate terminals to case for 1 minute
Table 3.
Symbol
Electrical Characteristics (T
= 25 °C, unless otherwise specified)
j
Test conditions
Quadrant
Value Unit
I
GT
V
GT
V
GD
t
gt
MAX.
MAX.
MIN.
TY
P
.
TY
P
.
150
1.5
0.2
2.5
50
mA
V
V
D
= 12 V DC, R
L
= 33
Ω
V
D
= V
DRM
R
L
= 3.3 k
Ω
I – II – III
T
j
= 125 °C
I – II – III
I – II – III
V
V
D
= V
DRM G
I
= 500 mA
dI
G
/dt = 3 A/µs
µs
mA
(1)
I
H
I
T
= 500 mA
Gate open
I – III
II
100
200
I
L
I
G
= 1.2 x I
GT
TY
P
.
mA
dV/dt
Linear slope up to: V
D
= 67% V
DRM
Gate open
I
TM
= 35 A
t
p
= 380 µs
T
j
= 125 °C
MIN. 2000
V/µs
V
(1)
V
TM
MAX.
MAX.
MAX.
1.8
1.1
19
20
8
(1)
V
to
Threshold voltage
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
(1)
R
d
Dynamic resistance
m
Ω
µA
mA
I
DRM
I
RRM
V
DRM
= V
RRM
MAX.
MIN.
(dV/dt)c = 200 V/µs
(dV/dt)c = 10 V/µs
20
88
(dI/dt)c
(1)
T
j
= 125 °C
A/ms
1. For
either polarity of electrode A
2
voltage with reference to electrode A
1
.
2/7
Doc ID 18268 Rev 2
TPDVxx25
Characteristics
Table 4.
Symbol
Gate characteristics (maximum values)
Parameter
Value
Unit
P
G(AV)
P
GM
I
GM
Average gate power dissipation
Peak gate power dissipation
Peak gate current
1
40
8
W
W
A
t
p
= 20 µs
t
p
= 20 µs
t
p
= 20 µs
V
GM
Peak positive gate voltage
16
V
Table 5.
Symbol
Thermal resistance
Parameter
Value
Unit
R
th(j-a)
Junction to ambient
50
1.5
1.1
°C/W
°C/W
°C/W
R
th(j-c)
DC Junction
to case for DC
R
th(j-c)
AC Junction
to case for 360 °Conduction angle (F = 50 Hz)
Figure 1.
Max. rms power dissipation versus
Figure 2.
on-state rms current (F = 50Hz).
(curves limited by (dI/dt)c)
Max. rms power dissipation and
max. allowable temperatures
(T
and T
) for various R
amb
case th
P(W)
P(W)
T
case
(°C)
40
40
R
th
= 1.5°C/W
R
th
= 1°C/W
R
th
= 0.5°C/W
R
th
= 0°C/W
Rth case to ambient –
85
30
30
20
95
α
= 180°
α
= 120°
α
= 90°
105
115
125
20
10
α
= 60°
α
= 30°
180°
α
10
0
α
T
(°C)
amb
I (A)
T(RMS)
0
0
0
20
40
60
80
100
120
140
5
10
15
20
25
Figure 3.
On-state rms current versus case
Figure 4.
temperature
Relative variation of thermal
impedance versus pulse duration
I (A)
T(RMS)
K=[Z
/R
]
th(j-c) th(j-c)
30
25
20
15
10
5
1.00
α
= 180°
Z
th(j-c)
0.10
Z
th(j-a)
0.01
T (°C)
case
t (s)
p
0.0
1E-3
0
0
25
50
75
100
125
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
Doc ID 18268 Rev 2
3/7
Characteristics
TPDVxx25
Figure 5.
Relative variation of gate trigger
current and holding current versus
junction temperature
Figure 6.
Non repetitive surge peak on-state
current versus number of cycles
I
,I ,I [T
] / I
,I ,I [T
=25°C]
H L
j GT
H L
j
GT
I (A)
TSM
2.5
2
200
t = 20 ms
One cycle
150
100
I
GT
1.5
T
j
initial=25°C
1
I
H
& I
L
50
0
0.5
0
Number of cycles
T (°C)
j
1
10
100
1000
-40 -30
-20 -10
0
10 20
30 40 50 60 70 80 90
100 110 120 130
Figure 7.
Non-repetitive surge peak on-state
Figure 8.
current for a sinusoidal pulse and
corresponding values of I t
On-state characteristics (maximum
values)
2
I
(A)
TM
I
(A), I
2
t (A
2
s)
TSM
1000
100
10
1000
T
j
initial = 25°C
I
TSM
T
j
=max
I
2
t
T
j
=25°C
T
j
max.:
V
t0
=1.1V
R
d
=19m
Ω
t (ms)
p
V (V)
TM
100
1
1
2
3
4
5
6
1
2
5
10
Figure 9.
Safe turn-off operating area
(dV/dt)c(V/µs)
1000
T
j
initial = 25°C
100
10
(dI/dt)c(A/ms)
1
1
10
100
4/7
Doc ID 18268 Rev 2
TPDVxx25
Package information
2
Package information
●
●
●
Epoxy meets UL94,V0
Cooling method: C (by conduction)
Recommended torque value: 0.9 to 1.2 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
®
ECO
P
A
CK is
an ST trademark.
Table 6.
TOP3 insulated dimensions
Dimensions
Millimeters
Ref.
Inches
Min. Max.
Min.
Max.
H
A
A
B
4.4
1.45
14.35
0.5
4.6
1.55
15.60
0.7
0.173
0.057
0.565
0.020
0.106
0.622
0.815
0.594
0.213
0.134
0.161
0.047
0.181
0.061
0.614
0.028
0.114
0.650
0.831
0.610
0.222
0.144
0.164
0.055
R
B
ØL
C
D
E
K
G
C
F
2.7
2.9
F
15.8
20.4
15.1
5.4
16.5
21.1
15.5
5.65
3.65
4.17
1.40
G
H
J
P
D
K
3.4
J
J
E
ØL
P
4.08
1.20
R
4.60 typ.
0.181 typ.
Doc ID 18268 Rev 2
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Ordering information
TPDVxx25
3
Ordering information
Table 7.
Order code
TPDV825RG
Ordering information
Marking
Package
Weight Base
qty Delivery
mode
TPDV825
TPDV1025
TPDV1225
TOP3
insulated
TPDV1025RG
TPDV1225RG
4.5 g
30
T
u
be
4
Revision history
Table 8.
Date
Document revision history
Revision
Changes
30-Mar-2011
13-Jan-2012
1
2
First issue.
6/7
Doc ID 18268 Rev 2
TPDVxx25
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Doc ID 18268 Rev 2
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